Post on 12-Apr-2022
IGBTLowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1fastandsoftantiparalleldiode
IKW30N65EL5650VDuoPackIGBTanddiodeLowVCE(sat)seriesfifthgeneration
Datasheet
IndustrialPowerControl
Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2www.infineon.com 2020-10-07
IKW30N65EL5
LowVCE(sat)seriesfifthgeneration
LowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1fastandsoftantiparalleldiodeFeaturesandBenefits:
LowVCE(sat)L5technologyoffering•Verylowcollector-emittersaturationvoltageVCEsat•Best-in-Classtradeoffbetweenconductionandswitchinglosses•650Vbreakdownvoltage•LowgatechargeQG•Maximumjunctiontemperature175°C•QualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating•RoHScompliant•CompleteproductspectrumandPSpicemodels:http://www.infineon.com/igbt/
Applications:
•Uninterruptiblepowersupplies•Solarphotovoltaicinverters•Weldingmachines
G
C
E
GC
E
KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIKW30N65EL5 650V 30A 1.05V 175°C K30EEL5 PG-TO247-3
Datasheet 3 V2.22020-10-07
IKW30N65EL5
LowVCE(sat)seriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Datasheet 4 V2.22020-10-07
IKW30N65EL5
LowVCE(sat)seriesfifthgeneration
MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 650 V
DCcollectorcurrent,limitedbyTvjmaxTc=25°CvaluelimitedbybondwireTc=100°C
IC 85.062.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 120.0 A
Turn off safe operating areaVCE≤650V,Tvj≤175°C,tp=1µs1) - 120.0 A
Diodeforwardcurrent,limitedbyTvjmaxTc=25°CvaluelimitedbybondwireTc=100°C
IF 50.041.0
A
Diodepulsedcurrent,tplimitedbyTvjmax1) IFpuls 120.0 A
Gate-emitter voltageTransientGate-emittervoltage(tp≤10µs,D<0.010) VGE
±20±30 V
PowerdissipationTc=25°CPowerdissipationTc=100°C Ptot
227.0114.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,2)
wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm
ThermalResistance
Valuemin. typ. max.
Parameter Symbol Conditions Unit
RthCharacteristics
IGBT thermal resistance,junction - case Rth(j-c) - - 0.66 K/W
Diode thermal resistance,junction - case Rth(j-c) - - 0.95 K/W
Thermal resistancejunction - ambient Rth(j-a) - - 40 K/W
1) Defined by design. Not subject to production test.2) Package not recommended for surface mount applications.
Datasheet 5 V2.22020-10-07
IKW30N65EL5
LowVCE(sat)seriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=30.0ATvj=25°CTvj=100°CTvj=150°C
---
1.051.051.04
1.35--
V
Diode forward voltage VF
VGE=0V,IF=30.0ATvj=25°CTvj=100°CTvj=150°C
---
1.351.321.28
1.70--
V
Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=20V 4.2 5.0 5.8 V
Zero gate voltage collector current ICES
VCE=650V,VGE=0VTvj=25°CTvj=150°CTvj=175°C
---
-4002000
40--
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=30.0A - 65.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 4600 -
Output capacitance Coes - 64 -
Reverse transfer capacitance Cres - 18 -
VCE=25V,VGE=0Vf=1000kHz pF
Gate charge QGVCC=520V,IC=30.0A,VGE=15V - 168.0 - nC
Internal emitter inductancemeasured 5mm (0.197 in.) fromcase
LE - 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 33 - ns
Rise time tr - 11 - ns
Turn-off delay time td(off) - 308 - ns
Fall time tf - 51 - ns
Turn-on energy Eon - 0.47 - mJ
Turn-off energy Eoff - 1.35 - mJ
Total switching energy Ets - 1.82 - mJ
Tvj=25°C,VCC=400V,IC=30.0A,VGE=0.0/15.0V,RG(on)=10.0Ω,RG(off)=10.0Ω,Lσ=60nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
Datasheet 6 V2.22020-10-07
IKW30N65EL5
LowVCE(sat)seriesfifthgeneration
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 87 - ns
Diode reverse recovery charge Qrr - 0.91 - µC
Diode peak reverse recovery current Irrm - 21.0 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -1250 - A/µs
Tvj=25°C,VR=400V,IF=30.0A,diF/dt=1500A/µs
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=150°CTurn-on delay time td(on) - 31 - ns
Rise time tr - 13 - ns
Turn-off delay time td(off) - 370 - ns
Fall time tf - 150 - ns
Turn-on energy Eon - 0.68 - mJ
Turn-off energy Eoff - 2.18 - mJ
Total switching energy Ets - 2.86 - mJ
Tvj=150°C,VCC=400V,IC=30.0A,VGE=0.0/15.0V,RG(on)=10.0Ω,RG(off)=10.0Ω,Lσ=60nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time trr - 100 - ns
Diode reverse recovery charge Qrr - 1.91 - µC
Diode peak reverse recovery current Irrm - 28.0 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -1075 - A/µs
Tvj=150°C,VR=400V,IF=30.0A,diF/dt=1500A/µs
Datasheet 7 V2.22020-10-07
IKW30N65EL5
LowVCE(sat)seriesfifthgeneration
Figure 1. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs,ICmaxdefinedbydesign-notsubjecttoproduction test)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
1 10 100 10000.1
1
10
100
not for linear use
Figure 2. Powerdissipationasafunctionofcasetemperature(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot ,PO
WER
DISSIPA
TION[W
]
25 50 75 100 125 150 1750
25
50
75
100
125
150
175
200
225
250
Figure 3. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,C
OLLEC
TORCURREN
T[A]
25 50 75 100 125 150 1750
10
20
30
40
50
60
70
80
90
Figure 4. Typicaloutputcharacteristic(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.00
10
20
30
40
50
60
70
80
90VGE = 20V
18V
15V
12V
10V
8V
7V
6V
Datasheet 8 V2.22020-10-07
IKW30N65EL5
LowVCE(sat)seriesfifthgeneration
Figure 5. Typicaloutputcharacteristic(Tvj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.00
10
20
30
40
50
60
70
80
90VGE = 20V
18V
15V
12V
10V
8V
7V
6V
5V
Figure 6. Typicaltransfercharacteristic(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
2 3 4 5 6 7 8 90
10
20
30
40
50
60
70
80
90Tvj=25°CTvj=150°C
Figure 7. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,C
OLLEC
TOR-EMITTE
RSAT
URAT
ION[V
]
25 50 75 100 125 150 1750.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3IC=7.5AIC=15AIC=30A
Figure 8. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,RG(on)=10Ω,RG(off)=10Ω,dynamictest circuit in Figure E)
IC,COLLECTORCURRENT[A]
t,SW
ITCHINGTIMES
[ns]
0 10 20 30 40 50 60 70 80 901
10
100
1000
td(off)
tftd(on)
tr
Datasheet 9 V2.22020-10-07
IKW30N65EL5
LowVCE(sat)seriesfifthgeneration
Figure 9. Typicalswitchingtimesasafunctionofgateresistance(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,IC=30A,dynamictestcircuitinFigure E)
RG,GATERESISTANCE[Ω]
t,SW
ITCHINGTIMES
[ns]
0 10 20 30 40 50 60 701
10
100
1000
td(off)
tftd(on)
tr
Figure 10. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=0/15V,IC=30A,RG(on)=10Ω,RG(off)=10Ω,dynamictest circuit in Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SW
ITCHINGTIMES
[ns]
25 50 75 100 125 150 1751
10
100
1000td(off)
tftd(on)
tr
Figure 11. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0.4mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th) ,GAT
E-EM
ITTE
RTHRES
HOLD
VOLTAG
E[V]
25 50 75 100 125 150 1751
2
3
4
5
6
7typ.min.max.
Figure 12. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,RG(on)=10Ω,RG(off)=10Ω,dynamic test circuit in Figure E)
IC,COLLECTORCURRENT[A]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
0 10 20 30 40 50 60 70 80 900
1
2
3
4
5
6
7
8Eoff
Eon
Ets
Datasheet 10 V2.22020-10-07
IKW30N65EL5
LowVCE(sat)seriesfifthgeneration
Figure 13. Typicalswitchingenergylossesasafunctionofgateresistance(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,IC=30A,dynamictestcircuitinFigure E)
RG,GATERESISTANCE[Ω]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
0 10 20 30 40 50 60 700.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=0/15V,IC=30A,RG(on)=10Ω,RG(off)=10Ω,dynamictest circuit in Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
25 50 75 100 125 150 1750.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tvj=150°C,VGE=0/15V,IC=30A,RG(on)=10Ω,RG(off)=10Ω,dynamictest circuit in Figure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
200 250 300 350 400 450 5000.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6Eoff
Eon
Ets
Figure 16. Typicalgatecharge(IC=30A)
QG,GATECHARGE[nC]
VGE ,GAT
E-EM
ITTE
RVOLTAG
E[V]
0 30 60 90 120 150 1800
2
4
6
8
10
12
14
16VCC=130VVCC=520V
Datasheet 11 V2.22020-10-07
IKW30N65EL5
LowVCE(sat)seriesfifthgeneration
Figure 17. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,C
APAC
ITAN
CE[pF]
0 5 10 15 20 25 3010
100
1000
1E+4Cies
Coes
Cres
Figure 18. IGBTtransientthermalimpedance(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j -c
) ,TR
ANSIEN
TTH
ERMAL
IMPE
DAN
CE[K/W
]
1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001
0.01
0.1
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
10.01072.0E-5
20.155062.2E-4
30.172942.0E-3
40.290170.01147
50.027140.09256
62.2E-31.82712
Figure 19. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j -c
) ,TR
ANSIEN
TTH
ERMAL
IMPE
DAN
CE[K/W
]
1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001
0.01
0.1
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
10.0314942.5E-5
20.2209472.1E-4
30.2912651.7E-3
40.3668080.010113
50.036630.08082
62.3E-31.811337
Figure 20. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=400V)
dIF/dt,DIODECURRENTSLOPE[A/µs]
trr,R
EVER
SEREC
OVE
RYTIME[ns]
1000 1500 2000 2500 3000 3500 400030
40
50
60
70
80
90
100
110
120
130
140
150Tvj=25°C,IF=30ATvj=150°C,IF=30A
Datasheet 12 V2.22020-10-07
IKW30N65EL5
LowVCE(sat)seriesfifthgeneration
Figure 21. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=400V)
dIF/dt,DIODECURRENTSLOPE[A/µs]
Qrr ,REV
ERSE
REC
OVE
RYCHAR
GE[µC]
1000 1500 2000 2500 3000 3500 40000.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25Tvj=25°C,IF=30ATvj=150°C,IF=30A
Figure 22. Typicalreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)
dIF/dt,DIODECURRENTSLOPE[A/µs]
Irr,R
EVER
SEREC
OVE
RYCURREN
T[A]
1000 1500 2000 2500 3000 3500 40000
5
10
15
20
25
30
35
40
45
50Tvj=25°C,IF=30ATvj=150°C,IF=30A
Figure 23. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)
dIF/dt,DIODECURRENTSLOPE[A/µs]
dIrr /dt,D
IODEPE
AKRAT
EOFFA
LLOFIrr[A
/µs]
1000 1500 2000 2500 3000 3500 4000-2250
-2000
-1750
-1500
-1250
-1000
-750
-500Tvj=25°C,IF=30ATvj=150°C,IF=30A
Figure 24. Typicaldiodeforwardcurrentasafunctionofforwardvoltage
VF,FORWARDVOLTAGE[V]
IF ,FORWAR
DCURREN
T[A]
0.0 0.5 1.0 1.5 2.0 2.50
10
20
30
40
50
60
70
80
90Tvj=25°CTvj=175°C
Datasheet 13 V2.22020-10-07
IKW30N65EL5
LowVCE(sat)seriesfifthgeneration
Figure 25. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF ,FO
RWAR
DVOLTAG
E[V]
25 50 75 100 125 150 1750.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6IF=7.5AIF=15AIF=30A
Datasheet 14 V2.22020-10-07
IKW30N65EL5
LowVCE(sat)seriesfifthgeneration
MILLIMETERS
5.44
c
Q
E3
E2
D
E
D1
D2
L1
e
L
S
P
E1
b1
A
A1
b
A2
b2
0.38
6.04
5.35
1.00
3.40
3.85
20.70
13.08
15.50
0.51
3.50
19.80
12.38
1.60
4.70
2.20
1.00
1.50
2.57
0.89
6.30
6.25
17.65
2.60
5.10
14.15
3.70
21.50
16.30
20.40
1.35
4.50
2.41
5.30
2.60
1.40
2.50
3.43
1
REVISION
06
25.07.2018
ISSUE DATE
EUROPEAN PROJECTION
0
SCALE
5mm
DOCUMENT NO.
Z8B00003327
DIMENSIONSMIN. MAX.
3:1
2 3 4
Package Drawing PG-TO247-3
Datasheet 15 V2.22020-10-07
IKW30N65EL5
LowVCE(sat)seriesfifthgeneration
t
a b
td(off)
tf t
rtd(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE
(t)
t
t
tt1 t
4
2% IC
10% VGE
2% VCE
t2
t3
E
t
t
V I toff
= x x d
1
2
CE CE
t
t
V I ton
= x x d
3
4
CE C
CC
dI /dtF
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switchingcharacteristics
Figure E. Dynamic test circuit
Figure D.
I (t)C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Qrr a b
rr a b
= +
= +
Qa Qb
V (t)CE
VGE
(t)
I (t)C
V (t)CE
Testing Conditions
Datasheet 16 V2.22020-10-07
IKW30N65EL5
LowVCE(sat)seriesfifthgeneration
RevisionHistory
IKW30N65EL5
Revision:2020-10-07,Rev.2.2Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2014-12-10 Final data sheet
2.2 2020-10-07 VGE(th): test condition update
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