Datasheet IK#30N65EL5 - Infineon Technologies

IGBTLowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1fastandsoftantiparalleldiode

IKW30N65EL5650VDuoPackIGBTanddiodeLowVCE(sat)seriesfifthgeneration

Datasheet

IndustrialPowerControl

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2www.infineon.com 2020-10-07

IKW30N65EL5

LowVCE(sat)seriesfifthgeneration

LowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1fastandsoftantiparalleldiodeFeaturesandBenefits:

LowVCE(sat)L5technologyoffering•Verylowcollector-emittersaturationvoltageVCEsat•Best-in-Classtradeoffbetweenconductionandswitchinglosses•650Vbreakdownvoltage•LowgatechargeQG•Maximumjunctiontemperature175°C•QualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating•RoHScompliant•CompleteproductspectrumandPSpicemodels:http://www.infineon.com/igbt/

Applications:

•Uninterruptiblepowersupplies•Solarphotovoltaicinverters•Weldingmachines

G

C

E

GC

E

KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIKW30N65EL5 650V 30A 1.05V 175°C K30EEL5 PG-TO247-3

Datasheet 3 V2.22020-10-07

IKW30N65EL5


TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Datasheet 4 V2.22020-10-07

IKW30N65EL5


MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 650 V

DCcollectorcurrent,limitedbyTvjmaxTc=25°CvaluelimitedbybondwireTc=100°C

IC 85.062.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 120.0 A

Turn off safe operating areaVCE≤650V,Tvj≤175°C,tp=1µs1) - 120.0 A

Diodeforwardcurrent,limitedbyTvjmaxTc=25°CvaluelimitedbybondwireTc=100°C

IF 50.041.0

A

Diodepulsedcurrent,tplimitedbyTvjmax1) IFpuls 120.0 A

Gate-emitter voltageTransientGate-emittervoltage(tp≤10µs,D<0.010) VGE

±20±30 V

PowerdissipationTc=25°CPowerdissipationTc=100°C Ptot

227.0114.0 W

Operating junction temperature Tvj -40...+175 °C

Storage temperature Tstg -55...+150 °C

Soldering temperature,2)

wave soldering 1.6mm (0.063in.) from case for 10s 260 °C

Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm

ThermalResistance

Valuemin. typ. max.

Parameter Symbol Conditions Unit

RthCharacteristics

IGBT thermal resistance,junction - case Rth(j-c) - - 0.66 K/W

Diode thermal resistance,junction - case Rth(j-c) - - 0.95 K/W

Thermal resistancejunction - ambient Rth(j-a) - - 40 K/W

1) Defined by design. Not subject to production test.2) Package not recommended for surface mount applications.

Datasheet 5 V2.22020-10-07

IKW30N65EL5


ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V

Collector-emitter saturation voltage VCEsat

VGE=15.0V,IC=30.0ATvj=25°CTvj=100°CTvj=150°C

---

1.051.051.04

1.35--

V

Diode forward voltage VF

VGE=0V,IF=30.0ATvj=25°CTvj=100°CTvj=150°C

---

1.351.321.28

1.70--

V

Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=20V 4.2 5.0 5.8 V

Zero gate voltage collector current ICES

VCE=650V,VGE=0VTvj=25°CTvj=150°CTvj=175°C

---

-4002000

40--

µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V,IC=30.0A - 65.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


DynamicCharacteristic

Input capacitance Cies - 4600 -

Output capacitance Coes - 64 -

Reverse transfer capacitance Cres - 18 -

VCE=25V,VGE=0Vf=1000kHz pF

Gate charge QGVCC=520V,IC=30.0A,VGE=15V - 168.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 13.0 - nH

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 33 - ns

Rise time tr - 11 - ns

Turn-off delay time td(off) - 308 - ns

Fall time tf - 51 - ns

Turn-on energy Eon - 0.47 - mJ

Turn-off energy Eoff - 1.35 - mJ

Total switching energy Ets - 1.82 - mJ

Tvj=25°C,VCC=400V,IC=30.0A,VGE=0.0/15.0V,RG(on)=10.0Ω,RG(off)=10.0Ω,Lσ=60nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

Datasheet 6 V2.22020-10-07

IKW30N65EL5


DiodeCharacteristic,atTvj=25°C

Diode reverse recovery time trr - 87 - ns

Diode reverse recovery charge Qrr - 0.91 - µC

Diode peak reverse recovery current Irrm - 21.0 - A

Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -1250 - A/µs

Tvj=25°C,VR=400V,IF=30.0A,diF/dt=1500A/µs

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=150°CTurn-on delay time td(on) - 31 - ns

Rise time tr - 13 - ns

Turn-off delay time td(off) - 370 - ns

Fall time tf - 150 - ns

Turn-on energy Eon - 0.68 - mJ

Turn-off energy Eoff - 2.18 - mJ

Total switching energy Ets - 2.86 - mJ

Tvj=150°C,VCC=400V,IC=30.0A,VGE=0.0/15.0V,RG(on)=10.0Ω,RG(off)=10.0Ω,Lσ=60nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

DiodeCharacteristic,atTvj=150°C

Diode reverse recovery time trr - 100 - ns

Diode reverse recovery charge Qrr - 1.91 - µC

Diode peak reverse recovery current Irrm - 28.0 - A

Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -1075 - A/µs

Tvj=150°C,VR=400V,IF=30.0A,diF/dt=1500A/µs

Datasheet 7 V2.22020-10-07

IKW30N65EL5


Figure 1. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs,ICmaxdefinedbydesign-notsubjecttoproduction test)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLEC

TORCURREN

T[A]

1 10 100 10000.1

1

10

100

not for linear use

Figure 2. Powerdissipationasafunctionofcasetemperature(Tvj≤175°C)

TC,CASETEMPERATURE[°C]

Ptot ,PO

WER

DISSIPA

TION[W

]

25 50 75 100 125 150 1750

25

50

75

100

125

150

175

200

225

250

Figure 3. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tvj≤175°C)

TC,CASETEMPERATURE[°C]

IC,C

OLLEC

TORCURREN

T[A]

25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

90

Figure 4. Typicaloutputcharacteristic(Tvj=25°C)


IC,C

OLLEC

TORCURREN

T[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40

50

60

70

80

90VGE = 20V

18V

15V

12V

10V

8V

7V

6V

Datasheet 8 V2.22020-10-07

IKW30N65EL5


Figure 5. Typicaloutputcharacteristic(Tvj=175°C)


IC,C

OLLEC

TORCURREN

T[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40

50

60

70

80

90VGE = 20V

18V

15V

12V

10V

8V

7V

6V

5V

Figure 6. Typicaltransfercharacteristic(VCE=20V)

VGE,GATE-EMITTERVOLTAGE[V]

IC,C

OLLEC

TORCURREN

T[A]

2 3 4 5 6 7 8 90

10

20

30

40

50

60

70

80

90Tvj=25°CTvj=150°C

Figure 7. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)

Tvj,JUNCTIONTEMPERATURE[°C]

VCEsat,C

OLLEC

TOR-EMITTE

RSAT

URAT

ION[V

]

25 50 75 100 125 150 1750.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3IC=7.5AIC=15AIC=30A

Figure 8. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,RG(on)=10Ω,RG(off)=10Ω,dynamictest circuit in Figure E)

IC,COLLECTORCURRENT[A]

t,SW

ITCHINGTIMES

[ns]

0 10 20 30 40 50 60 70 80 901

10

100

1000

td(off)

tftd(on)

tr

Datasheet 9 V2.22020-10-07

IKW30N65EL5


Figure 9. Typicalswitchingtimesasafunctionofgateresistance(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,IC=30A,dynamictestcircuitinFigure E)

RG,GATERESISTANCE[Ω]

t,SW

ITCHINGTIMES

[ns]

0 10 20 30 40 50 60 701

10

100

1000

td(off)

tftd(on)

tr

Figure 10. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=0/15V,IC=30A,RG(on)=10Ω,RG(off)=10Ω,dynamictest circuit in Figure E)


t,SW

ITCHINGTIMES

[ns]

25 50 75 100 125 150 1751

10

100

1000td(off)

tftd(on)

tr

Figure 11. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0.4mA)


VGE(th) ,GAT

E-EM

ITTE

RTHRES

HOLD

VOLTAG

E[V]

25 50 75 100 125 150 1751

2

3

4

5

6

7typ.min.max.

Figure 12. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,RG(on)=10Ω,RG(off)=10Ω,dynamic test circuit in Figure E)

IC,COLLECTORCURRENT[A]

E,S

WITCHINGENER

GYLO

SSES

[mJ]

0 10 20 30 40 50 60 70 80 900

1

2

3

4

5

6

7

8Eoff

Eon

Ets

Datasheet 10 V2.22020-10-07

IKW30N65EL5


Figure 13. Typicalswitchingenergylossesasafunctionofgateresistance(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,IC=30A,dynamictestcircuitinFigure E)

RG,GATERESISTANCE[Ω]

E,S

WITCHINGENER

GYLO

SSES

[mJ]

0 10 20 30 40 50 60 700.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6Eoff

Eon

Ets

Figure 14. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=0/15V,IC=30A,RG(on)=10Ω,RG(off)=10Ω,dynamictest circuit in Figure E)


E,S

WITCHINGENER

GYLO

SSES

[mJ]

25 50 75 100 125 150 1750.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2Eoff

Eon

Ets

Figure 15. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tvj=150°C,VGE=0/15V,IC=30A,RG(on)=10Ω,RG(off)=10Ω,dynamictest circuit in Figure E)


E,S

WITCHINGENER

GYLO

SSES

[mJ]

200 250 300 350 400 450 5000.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6Eoff

Eon

Ets

Figure 16. Typicalgatecharge(IC=30A)

QG,GATECHARGE[nC]

VGE ,GAT

E-EM

ITTE

RVOLTAG

E[V]

0 30 60 90 120 150 1800

2

4

6

8

10

12

14

16VCC=130VVCC=520V

Datasheet 11 V2.22020-10-07

IKW30N65EL5


Figure 17. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)


C,C

APAC

ITAN

CE[pF]

0 5 10 15 20 25 3010

100

1000

1E+4Cies

Coes

Cres

Figure 18. IGBTtransientthermalimpedance(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIEN

TTH

ERMAL

IMPE

DAN

CE[K/W

]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.01072.0E-5

20.155062.2E-4

30.172942.0E-3

40.290170.01147

50.027140.09256

62.2E-31.82712

Figure 19. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIEN

TTH

ERMAL

IMPE

DAN

CE[K/W

]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.0314942.5E-5

20.2209472.1E-4

30.2912651.7E-3

40.3668080.010113

50.036630.08082

62.3E-31.811337

Figure 20. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=400V)

dIF/dt,DIODECURRENTSLOPE[A/µs]

trr,R

EVER

SEREC

OVE

RYTIME[ns]

1000 1500 2000 2500 3000 3500 400030

40

50

60

70

80

90

100

110

120

130

140

150Tvj=25°C,IF=30ATvj=150°C,IF=30A

Datasheet 12 V2.22020-10-07

IKW30N65EL5


Figure 21. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=400V)


Qrr ,REV

ERSE

REC

OVE

RYCHAR

GE[µC]

1000 1500 2000 2500 3000 3500 40000.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25Tvj=25°C,IF=30ATvj=150°C,IF=30A

Figure 22. Typicalreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)


Irr,R

EVER

SEREC

OVE

RYCURREN

T[A]

1000 1500 2000 2500 3000 3500 40000

5

10

15

20

25

30

35

40

45

50Tvj=25°C,IF=30ATvj=150°C,IF=30A

Figure 23. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)


dIrr /dt,D

IODEPE

AKRAT

EOFFA

LLOFIrr[A

/µs]

1000 1500 2000 2500 3000 3500 4000-2250

-2000

-1750

-1500

-1250

-1000

-750

-500Tvj=25°C,IF=30ATvj=150°C,IF=30A

Figure 24. Typicaldiodeforwardcurrentasafunctionofforwardvoltage

VF,FORWARDVOLTAGE[V]

IF ,FORWAR

DCURREN

T[A]

0.0 0.5 1.0 1.5 2.0 2.50

10

20

30

40

50

60

70

80

90Tvj=25°CTvj=175°C

Datasheet 13 V2.22020-10-07

IKW30N65EL5


Figure 25. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature


VF ,FO

RWAR

DVOLTAG

E[V]

25 50 75 100 125 150 1750.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6IF=7.5AIF=15AIF=30A

Datasheet 14 V2.22020-10-07

IKW30N65EL5


MILLIMETERS

5.44

c

Q

E3

E2

D

E

D1

D2

L1

e

L

S

P

E1

b1

A

A1

b

A2

b2

0.38

6.04

5.35

1.00

3.40

3.85

20.70

13.08

15.50

0.51

3.50

19.80

12.38

1.60

4.70

2.20

1.00

1.50

2.57

0.89

6.30

6.25

17.65

2.60

5.10

14.15

3.70

21.50

16.30

20.40

1.35

4.50

2.41

5.30

2.60

1.40

2.50

3.43

1

REVISION

06

25.07.2018

ISSUE DATE

EUROPEAN PROJECTION

0

SCALE

5mm

DOCUMENT NO.

Z8B00003327

DIMENSIONSMIN. MAX.

3:1

2 3 4

Package Drawing PG-TO247-3

Datasheet 15 V2.22020-10-07

IKW30N65EL5


t

a b

td(off)

tf t

rtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t

4

2% IC

10% VGE

2% VCE

t2

t3

E

t

t

V I toff

= x x d

1

2

CE CE

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

Testing Conditions

Datasheet 16 V2.22020-10-07

IKW30N65EL5


RevisionHistory

IKW30N65EL5

Revision:2020-10-07,Rev.2.2Previous Revision

Revision Date Subjects (major changes since last revision)

2.1 2014-12-10 Final data sheet

2.2 2020-10-07 VGE(th): test condition update

Trademarks

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PublishedbyInfineonTechnologiesAG81726München,Germany©InfineonTechnologiesAG2020.AllRightsReserved.

ImportantNoticeTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologiesincustomer’sapplications.

Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.

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Datasheet IK#30N65EL5 - Infineon Technologies

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