TETYANA TORCHYNSKA CURRICULUM VITAE · 2016 ; Surface and defect modifications in mixture of ZnO...
Transcript of TETYANA TORCHYNSKA CURRICULUM VITAE · 2016 ; Surface and defect modifications in mixture of ZnO...
TETYANA TORCHYNSKA
CURRICULUM VITAE
DATOS PERSONALES
CORREO
CAMPUS: [email protected]
TELEFONO
CAMPUS: (052) 55.57296000.55031
DESEMPEÑO PROFESIONAL
ADSCRIPCION ACTUAL
02/1999 -
_______ ;
INST. DE EDU. SUP. PUBLICAS, INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /
DEPTO. DE CIENCIAS DE MATERIALES, PROFESOR TITULAR ¿C ¿,T.C., PLAZA DE
PROPIEDAD
EXPERIENCIA LABORAL
05/2010 -
10/2010 ;
Institución , INST. DE EDU. SUP. PUBLICAS, PROFESOR INVITADO INSTITUTO FISICA
SEMICONDUCTORES, INSTITUTO TECNOLOGICO DEL MAR, FISICA, FISICA ESTADO
SOLIDO, NANOCIENCIAS, PUNTOS CUANTICOS PARA DIAGNOSTICA DE CANCER,
PROFESOR INVITADO INSTITUTO FISICA SEMICONDUCTORES de Academia Nacional de
Ciencias de Ucrania. Investigacion en area de aplicacion de emission de CdSe/ZnS puntos
cuanticos, bioconjugados a anticuerpos de diferentes formas de canceres, para diagnostica
temprana de cancer,
02/1999 -
_______ ;
Institución , INST. DE EDU. SUP. PUBLICAS, PROFESSOR TITULAR C (EXCELENCIA),
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
PROPIEDADES OPTICOS DE NANO ESTRUCTURAS DE MATERIALS DE GROUPO IV (SI, GE,
SIC), QUANTUM DOT IN A WELL STRUCTURES *DWELL) FOR OPTICAL FIBER LASERS OF
NEW GENERATIONS, QUANTUM DOTS (CDSE/ZNS) AS A BIOSENSORS OF HUMAN
ANTYBODIES, ESFM-IPN, Investigacion optica de nanocristales y puntos cuanticos de
semiconductores de groupos IV (Si, Ge, SiC), III-V (inAs, GaAs) y II-VI (CdSe, ZnS),
07/1996 -
01/1999 ;
Institución , ENTIDADES EXTERNAS, FULL PROFESSOR, JEFE DE DEPARTAMENTO,
ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, NANOCIENCIA DE
SEMICONDUCTORES, FISICA ESTADO SOLIDO, NANOTECHNOLOGIAS, Instituto de Fisica de
Semiconductores de Academia de Ciencias Nacional De Ucrania, Jefe del Departomento de
Optoelectronics,
01/1995 -
03/1995 ;
Institución , ENTIDADES EXTERNAS, VISITING PROFESSOR, HOPITAUX DE PARIS,
OPTOCAL PROPERTIES OF POROUS MATERIALS, NANOSTRUCTURES, QUANTUM DOTS,
Profesor invitado en 6-to Universidad de Paris, Paris, France, Investigacion de los EPR en porous
silicon,
04/1991 -
07/1996 ;
Institución , ENTIDADES EXTERNAS, FULL PROFESSOR, JEFE DE LABORATORIO,
ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, MATERIALES Y DISPOSITIVOS
OPTOELECTRONICOS, FISICA DE ESTADO SOLIDO, FISICA DE DEGRADACION, Instituto
Fisica de Semiconductores de Academia de Ciencias Nacional de Ucrania, Jefe de Laboratorio
"Despositivos Optoelectronicos y Fisica de su degradacion",
06/1984 -
04/1991 ;
Institución , ENTIDADES EXTERNAS, LEADING SCIENTIST INVESTIGATOR, ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, FISICA DE SEMICONDUCTORES, MATERIALES
OPTOELECTRONICOS Y DISPOSITIVOS, DEGRADACION, Instituto Fisica de Semiconductores
de Acedemia Nacional de Ciencias de Ucrania, Investigacion de los procesas degradacion de
emisores de luz, laseras, fotodiodas y celdas solares, creacion modeles fisicos y su simulacion
numerica.,
02/1980 -
12/1998 ;
Institución , ENTIDADES EXTERNAS, PROFESOR INVITADO, NATIONAL TECHNICAL
UNIVERSITY, FISICA DE SEMICONDUCTORES, FISICA DE DESPOSITIVOS DE
SEMICONDUCTORES, MATERIALES OPTOELECTRONICOS, Profesor asociado (1980-1984) y
Profesol Titular (1984-1998) en Facultad Radioelectronica Universidad Technica National de
Ucrania -"KPI" , Kiev, Ukraine,
12/1977 -
06/1984 ;
Institución , ENTIDADES EXTERNAS, SENIOR SCIENTIST INVESTIGATOR, ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, FISICA DE SEMICONDUCTORES, MATERIALES Y
DISPOSITIVOS OPTOELECTRONICOS, FISICA DE DEGRADACION, Instituto Fisica de
SEmiconductores de Acedemia Nacional de Ciencias de Ucrania, Reacciones de los defectos en
semiconductores estimulados por recombinacion de los portadores inequlibrium,
12/1974 -
11/1977 ;
Institución , ENTIDADES EXTERNAS, ESTUDIO NIVEL DOCTORADO (POST GRADUATE
STUDENT), ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, FISICA DE
SEMICONDUCTORES Y DIELECTRICOS, FISICA DE DESPOSITIVOS DE
SEMICONDUCTORES, DEGRADATION, Instituto de Fisica de Semiconductores de Academia de
Ciencias de Ucrania, Reacciones Fotochemicas en semiconductores II-VI y su coneccion con los
procesas degradacion de materiales y despositivos,
04/1973 -
11/1974 ;
Institución , ENTIDADES EXTERNAS, MAESTRO EN CIENCIAS, NATIONAL TECHNICAL
UNIVERSITY, FISICA DE SEMICONDUCTORES Y DIELECTRICOS, OPTOELECTRONICA,
CIENCIA DE MATERIALES, Departamento FISICA DE SEMICONDUCTORES Y
DIELECTRICOS. Procesos en peliculas de los islantes,
PRODUCCION CIENTIFICA
ARTICULOS
2016 ; Emission of Cu-related complexes in ZnO:Cu nanocrystals,, T.V. Torchynska, B. El Filali, I. Ch. Ballardo
Rodríguez, Physica E, Vol.75, Pag.156-162, Revistas Indizadas ,
2016 ; Surface modification in mixture of ZnO + 3%C nanocrystals stimulated by mechanical processing, T.
Torchynska, B. Perez Millan, G. Polupan, and M. Kakazey, AIMS Materials Science, Vol.3, Pag.204-213,
Revistas Arbitradas ,
2016 ; Surface and defect modifications in mixture of ZnO and carbon nanocrystals at mechanical processing,
T. Torchynska, B. Perez Millan, G. Polupan, and M. Kakazey, Materials Sciencein Semiconductor
Processing, Vol.47, Pag.37-43, Revistas Indizadas ,
2016 ; Defect Related Emission of ZnO and ZnO Cu Nanocrystals Prepared by Electrochemical method, 3 FEB
2016 T. V. Torchynska, B. El Filali, I. Ch. Ballardo Rodríguez and L. Shcherbyna DOI:
10.1002/pssc.201510277, , phys. stat. sol. (c),, Vol. , Pag.13-18, Revistas Arbitradas ,
2015 ; PHYSICAL REASONS OF EMISSION TRANSFORMATION IN INFRARED CDSETE/ZNS
QUANTUM DOTS AT BIOCONJUGATION, ISSN 1386-9477., T. V. Torchynska, Physica E, 68 (2015)
87¿92, ISSN 1386-9477., Physica E, ISSN 1386-9477., Vol.68, Pag.87-92, Revistas Indizadas ,
2015 ; PHOTOLUMINESCENCE AND RAMAN SCATTERING STUDY IN ZNO:CU NANOCRYSTALS,, B.
El Filali, T.V. Torchynska and A.I. Diaz Cano,, J. Luminescence,, Vol.161, Pag.25-30, Revistas Indizadas ,
2015 ; WEAK QUANTUM CONFINEMENT AND POLARITONS IN ZNO AND ZNO CU
NANOCRYSTALS PREPARED BY ELECTROCHEMICAL METHOD,, Tetyana V. Torchynska,
Brahim El Filali, Aaron Israel Díaz Cano, and Lyudmula V. Shcherbyna ,, ECS Transaction, Vol.66,
Pag.267-274, Revistas Arbitradas ,
2015 ; BLUE EMISSION STIMULATION IN MIXTURE OF ZNO AND CARBON NANOCRYSTALS AT
MECHANICAL PROCESSING, ISSN: 1938-5862. ECS TRANS. 2015 66(1): 297-303, Tetyana V.
Torchynska, Brenda Perez Millan, Erick Velazquez Lozada, Mukola Kakazey, and Marina Vlasova, ECS
Transactions, Vol.66, Pag.297-303, Revistas Arbitradas ,
2015 ; PHOTOLUMINESCENCE EMISSION AND STRUCTURE DIVERSITY IN ZNO NANORODS,,
Velázquez Lozada, E., Camacho González, G.M., Torchynska, T, Journal of Physics: Conference Series,,
Vol.582, Pag.12031-0, Revistas Arbitradas ,
2015 ; EPR detection of sphalerite ZnO in mechanically treated ZnO + 0.1C nanosystem", M. Kakazey,
M.Vlasova, E.A.Juarez-Arellano, T.Torchynska, Materials Science in Semiconductor Processing,, Vol.39,
Pag.775-780, Revistas Indizadas ,
2015 ; PHOTOLUMINESCENCE SPECTRUM TRANSFORMATION IN SI RICHSILICON NITRIDE
VERSUS SILICON NITRIDE STOICHIOMETRY, T.V. Torchynska, J.L. Casas Espinola, E. Vergara
Hernandez, L. Khomenkova and A. Slaoui,, Thin Solid Films, Vol.581, Pag.65-69, Revistas Indizadas ,
2015 ; STRUCTURAL AND LIGHT EMITTING PROPERTIES OF SILICON-RICH SILICON NITRIDE
FILMS GROWN BY PLASMA ENHANCED-CHEMICAL VAPOR DEPOSITION, Torchynska, T.V.,
Casas Espinola, J.L., Khomenkova, L., (...), Andraca Adame, J.A., Slaoui, A.,, Materials Science in
Semiconductor Processing,, Vol.37, Pag.46-50, Revistas Indizadas ,
2015 ; PHOTOLUMINESCENCE TREND IN MIXTURE OF ZINC OXIDE AND CARBON
NANOPARTICLES AFTER MECHANICAL PROCESSING, Erick Velázquez Lozada, Tetyana
Torchynska, Jose Luis Casas Espinola, Alejandro Vivas Hernandez, Mykola Kakazey, Marina
Vlasova,Lyudmyla Shcherbyna, Luis Castañeda,, Materials Science in Semiconductor Processing,, Vol.37,
Pag.82-86, Revistas Indizadas ,
2015 ; Structural and Raman scattering studies of ZnO Cu nanocrystals grown by spray pyrolysis,, Brahim El
Filali, T. V. Torchynska, A. I. Díaz Cano and M. Morales Rodriguez, Revista Mexicana de Ingeniería
Química,, Vol.14, Pag.3-9, Revistas Indizadas ,
2015 ; INAS QUANTUM DOT EMISSION AND ANNEALING IMPACT IN QUANTUM WELLS WITH
STRAIN REDUCED LAYERS, Torchynska, T.V., Tamayo, R.C., Polupan, G., Stints, A., Shcherbyna,, J.
Luminescence,, Vol.163, Pag.40-46, Revistas Indizadas ,
2014 ; IMPACT OF CAPPING LAYER TYPE ON EMISSION OF INAS QUANTUM DOTS EMBEDDED IN
INGAAS/ INXALYGAZAS/ GAAS QUANTUM WELLS, ISSN: 0021-8979, T.V. Torchynska, J.L. Casas
Espinola, A. Stinz,, J. Applied Physics,, Vol.115, Pag.14305-0, Revistas Arbitradas ,
2014 ; AN EPR INVESTIGATION OF SIOX FILMS WITH COLUMNAR STRUCTURE, ISSN: 0921-4526,
V. Bratus, I. Indutnyi, P. Shepeliavyi, T. Torchynska, Physica B, ISSN 0921-4526, Vol. , Pag.0-0, Revistas
Arbitradas ,
2014 ; , EMISSION OF INAS QUANTUM DOTS EMBEDDED IN INGAAS / INALGAAS/GAAS QUANTUM
WELLS, ISSN: 0022-2313, R. Cisneros Tamayo, I.J. Gerrero Moreno, G. Polupan, T.V. Torchynska and J.
Palacios Gomez,, J. of Luminescence, ISSN: 0022-2313, Vol.149, Pag.1-6, Revistas Arbitradas ,
2014 ; SIZE DEPENDENT EMISSION STIMULATION IN ZNO NANOSHEETS, ISSN: 0022-2313, T. V.
Torchynska and B. El Filali,, J. of Luminescence,, Vol.149, Pag.54-60, Revistas Arbitradas ,
2013 ; ELECTRONIC EFFECTS IN EMISSION OF CORE/SHELL CDSE/ZNS QUANTUM DOTS
CONJUGATED TO ANTI-INTERLEUKIN 10 ANTIBODIES, ISSN: 0022-2313, A.L. Quintos Vazquez,
T.V. Torchynska, J.L. Casas Espinola, J.A. Jaramillo Gómez, J. Douda, J. of Luminescence,, Vol.143,
Pag.38-42, Revistas Arbitradas ,
2013 ; EMISSION OF CDSE/ZNS AND CDSETE/ZNS QUANTUM DOTS CONJUGATED TO IGG
ANTIBODIES, ISSN 1386-9477, V. Torchynska, J.L. Casas Espinola, A. Díaz Cano, J. Douda, K. Gazarian,,
Physica E, Vol.51, Pag.60-64, Revistas Indizadas ,
2013 ; EMISSION OF DOUBLE CORE INFRARED (CDSETE)/ZNS QUANTUM DOTS CONJUGATED TO
ANTIBODIES,ISSN: 0022-2313, T. Torchynska, J. of Luminescence, Vol.137, Pag.157-161, Revistas
Arbitradas ,
2013 ; PHOTOLUMINESCENCE PECULIARITIES IN INGAAS/GAAS STRUCTURES WITH DIFFERENT
INAS QUANTUM DOT DENSITIES, ISSN: 0022-2313, T. Torchynska, J. of Luminescence,, Vol.136,
Pag.75-79, Revistas Arbitradas ,
2013 ; EXCITON-LIGHT COUPLING AND POLARITONS IN SIC NANOCRYSTALS, ISSN: 1386-9477, M.
Morales Rodriguez, G. Polupan, T.V. Torchynska, Physica E,, Vol.51, Pag.19-23, Revistas Arbitradas ,
2013 ; EFFECT OF ASPECT RATIO ON ENERGY OF OPTICAL TRANSITIONS IN A PYRAMID-
SHAPED QUANTUM DOT, ISSN: 1386-9477, Yu.V. Vorobiev, T.V.Torchynska, P.P.Horley, Physica E,,
Vol.51, Pag.42-47, Revistas Arbitradas ,
2013 ; ``WHITE" EMISSION OF ZNO NANOSHEETS WITH THERMAL ANNEALING, ISSN: 1386-9477,
A.I. Diaz Cano, B. El Filali, T.V. Torchynska, J.L. Casas Espinola, Physica E,, Vol.51, Pag.24-28, Revistas
Arbitradas ,
2013 ; PHOTOLUMINESCENCE VARIATION IN INAS QUANTUM DOTS EMBEDDED IN
INGAAS/ALGAAS QUANTUM WELLS AT THERMAL ANNEALING, ISSN: 1386-9477, I.J. Guerrero
Moreno, T.V. Torchynska, J.L. CasasEspinola, Physica E,, Vol.51, Pag.37-41, Revistas Arbitradas ,
2013 ; PHOTOLUMINESCENCE OF DOUBLE CORE/SHELL INFRARED (CDSETE)/ZNS QUANTUM
DOTS CONJUGATED TO PSEUDO RABIES VIRUS ANTIBODIES, ISSN: 1386-9477, T.V.
Torchynska, J.L. Casas Espinola, J.A. JaramilloGómez, J. Douda, K. Gazarian, Physica E,, Vol.51, Pag.55-59,
Revistas Arbitradas ,
2013 ; EMISSION OF CDSE/ZNS AND CDSETE/ZNS QUANTUM DOTS CONJUGATED TO IGG
ANTIBODIES, ISSN 1386-9477, V. Torchynska, J.L. Casas Espinola, A. Díaz Cano, J. Douda, K. Gazarian,
Physica E,, Vol.51, Pag.60-64, Revistas Arbitradas ,
2013 ; SI QUANTUM DOT STRUCTURES AND THEIR APPLICATIONS, ISSN: 1386-9477, L. Shcherbyna,
T.Torchynska, Physica E,, Vol.51, Pag.65-70, Revistas Arbitradas ,
2013 ; STRUCTURE AND EMISSION TRANSFORMATION IN ZNO NANOSHEETS AT THERMAL
ANNEALING, ISSN: 0022-3697, A.I. Diaz Cano, B. El Falali, T.V. Torchynska, J.L. Casas Espinola, J.
Phys. Chem. Solids., Vol.74, Pag.431-435, Revistas Arbitradas ,
2013 ; MODELING OF THE EFFECT OF BIO-CONJUGATION TO ANTI-INTERLEUKIN-10
ANTIBODIESON THE PHOTOLUMINESCENCE OF CDSE/ZNS QUANTUM DOTS, ISBN: 978-1-
60511-594-8,, Tetyana V. Torchynska and Yuri V. Vorobiev and Paul P. Horley, Cambridge University Press,
ISBN: 978-1-60511-594-8,, MRS Proceedings, Vol.1617, Pag.0-0, Memorias de congresos ,
2013 ; EMISSION VARIATION IN CDSE/ZNS QUANTUM DOTS CONJUGATED TO PAPILLOMA
VIRUS ANTIBODIES, ISBN: 978-1-60511-594-8,, Juan A. Jaramillo Gómez and Tetyana V. Torchynska
and Jose L. Casas Espinola and Janna Douda, ISBN: 978-1-60511-594-8, Cambridge University Press, MRS
Proceedings, Vol.1617,, Pag.0-0, Memorias de congresos ,
2013 ; EPR AND EMISSION STUDY OF SILICON SUBOXIDE NANOPILLARS, ISBN: 978-1-60511-594-8,,
V. Bratus¿ and I. Indutnyi and P. Shepeliavyi and T. Torchynska, ISBN: 978-1-60511-594-8, Cambridge
University Press, MRS Proceedings, Vol.1617, Pag.0-0, Memorias de congresos ,
2013 ; SI QUANTUM DOT STRUCTURES AND SOME ASPECTS OF APPLICATION, ISBN: 978-1-60511-
594-8,, Lyudmula V. Shcherbyna and Tetyana V. Torchynska, ISBN: 978-1-60511-594-8, Cambridge
University Press, MRS Online Proceedings, Vol.1534, Pag.0-0, Memorias de congresos ,
2013 ; EMISSION AND HR-XRD STUDY IN INAS QUANTUM DOT STRUCTURES PREPARED AT
DIFFERENT QD¿S GROWTH TEMPERATURES, ISBN: 978-1-60511-594-8,, Leonardo G. Vega
Macotela and Tetyana V. Torchynska, ISBN: 978-1-60511-594-8, Cambridge University Press, MRS Online
Proceedings, Vol.1534, Pag.0-0, Memorias de congresos ,
2013 ; EMISSION MODIFICATION IN ZNO NANOSHEETS AT THERMAL ANNEALING , ISBN: 978-1-
60511-594-8,, Aaron I. Diaz Cano, Brahim El Filali, Tetyana V. Torchynska and Jose L. Casas Espinola,
ISBN: 978-1-60511-594-8, Cambridge University Press, MRS Online Proceedings, Vol.1534, Pag.0-0,
Memorias de congresos ,
2013 ; DOUBLE CORE INFRARED (CDSETE) / ZNS QUANTUM DOTS CONJUGATED TO IGG
ANTIBODIES, ISBN: 978-1-60511-594-8,, Tetyana V. Torchynska, Jose L. Casas Espinola, Chetzyl
Ballardo Rodriguez,Janna Douda and Karlen Gazaryan, ISBN: 978-1-60511-594-8, Cambridge University
Press, MRS Online Proceedings Library, ISBN: 978-1-60511-594-8,, Vol.1534, Pag.0-0, Memorias de
congresos ,
2013 ; COMPARATIVE STUDY OF PHOTOLUMINESCENCE VARIATION IN INAS QUANTUM DOTS
EMBEDDED IN INGAALAS QUANTUM WELLS, ISBN: 978-1-60511-594-8,DOI:
HTTP://DX.DOI.ORG/10.1557/OPL.2013.298, J.L. Casas Espinola, T.V. Torchynska, L. D. Cruz. Diosdado
and G. Polupan ISBN: 978-1-60511-594-8, Cambridge University Press, MRS Online Proceedings Library,
ISBN: 978-1-60511-594-8,, Vol.1534, Pag.0-0, Memorias de congresos ,
2013 ; DOUBLE CORE INFRARED CDSETE/ZNS QUANTUM DOTS CONJUGATED TO PAPILLOMA
VIRUS ANTIBODIES, ISBN: 978-1-60511-594-8,, . J.L. Casas Espinola, T. V. Torchynska, J. A. Jaramillo
Gómez, J. Douda and K. Gazarian ISBN: 978-1-60511-594-8, Cambridge University Press, MRS Online
Proceedings Library, ISBN: 978-1-60511-594-8,, Vol.1534, Pag.0-0, Memorias de congresos ,
2013 ; EMISSION AND STRUCTURE VARIETIES IN ZNO:AG NANORODS OBTAINED BY
ULTRASONIC SPRAY PYROLYSIS, ISBN 978-83-932197-1-1., E. Velázquez Lozada, T.V. Torchynska,
J. L. Casas Espinola and L. Castañeda, ISBN 978-83-932197-1-1., Microthechnology and Thermal
problems in Electronics, MICROTERM 2013, ISBN 978-83-932197-1-1., Vol.1, Pag.239-245, Memorias
de congresos ,
2013 ; PHOTOLUMINESCENCE VARIATION OF INAS QUANTUM DOTS EMBEDDED IN INALGAAS
QUANTUM WELLS AT THERMAL ANNEALING, ISBN 978-83-932197-1-1., J.L. Casas Espinola, T.V.
Torchynska, G. Polupan and D. Diosdado, ISBN 978-83-932197-1-1., Microthechnology and Thermal
problems in Electronics, MICROTERM 2013, ISBN 978-83-932197-1-1., Vol.1, Pag.139-143, Memorias
de congresos ,
2013 ; BLUE SHIFT OF PHOTOLUMINESCENCE OF CDSE/ZNS CORE SHELL QUANTUM DOYS
CAUSED BY BIOCONJUGTION TO ANTI INTERLEUKIN 10 ANTIBODIES, ISBN 978-5-4386-
0145-6, T.V.Torchynska, Yu.V. Vorobiev, P.P.Horley,, Nanostructures: Physics and Nanotechnology,
ISBN 978-5-4386-0145-6, Vol. , Pag.0-0, Memorias de congresos ,
2013 ; PHYSICA E, EDITORIAL, ISSN: 1386-9477, T.V.Torchynska, Yu. Vorobiev, Zs. Horvath,, J. Physica E,,
Vol.51, Pag.1-1, Revistas Arbitradas ,
2012 ; RE-CHARGING THE LUMINESCENT STATES IN CDSE/ZNS QUANTUM DOTS AT THE
CONJUGATION TO OSTEOPONTIN ANTIBODIES,ISSN: 0022-2313, T V Torchynska,, J.
Luminescence,, Vol.132, Pag.1848-1852, Revistas Arbitradas ,
2012 ; RAMAN SPECTRA OF CDSE/ZNS QUANTUM DOTS BIOCONJUGATED TO OVARIAN CANCER
ANTIBODIES, DOI: 10.1557/OPL.2012.284., A.L.Quintos Vazquez, T. V. Torchynska and L. Shcherbyna,
DOI: 10.1557/opl.2012.284., Mater. Res. Soc. Symp. Proc., Vol.1376, Pag.284-292, Memorias de
congresos ,
2012 ; ELECTRONIC EFFECTS IN CDSE/ZNS QUANTUM DOTS CONJUGATED TO IL-10
ANTIBODIES, ISBN-978-1-4665-6276-9, T. V. Torchynska, J.L. Casas Espinola, J. Douda, A.I.Diaz Cano
and O. S. López de la Luz, ISBN: 978-1-4665-6276-9, NANOTECH 2012 Proceeding, Vol.1, Pag.90-93,
Memorias de congresos ,
2012 ; RAMAN SPECTRA AND EMISSION OF CDSE/ZNS QUANTUM DOTS BIOCONJUGATED TO
OC125 ANTIBODIES, ISSN: 1610-1634, A.L. Quintos-Vazquez, L.G. Vega-Macotela, T.V. Torchynska*
and L. Shcherbyna, phys. stat. solid. (c),, Vol.9, Pag.1627-1629, Revistas Arbitradas ,
2012 ; PHOTOLUMINESCENCE TRANSFORMATION OF CORE/SHELL CDSE/ZNS QUANTUM DOTS
AT THE CONJUGATION TO BIOMOLECULES, DOI: 10.1557/OPL.2012.281, T. V. Torchynska, I. Ch.
Ballardo Rodríguez and Ye. Shcherbyna, DOI: 10.1557/opl.2012.281, Mater. Res. Soc. Symp. Proc.,
Vol.1376, Pag.281-283, Memorias de congresos ,
2011 ; PHOTOLUMINESCENCE STUDY AND PARAMETER EVALUATION IN INAS QUANTUM DOT-
IN-A-WELL STRUCTURES, ISSN: 0921-5107, T.V. Torchynska, A. Vivas Hernandez, G. Polupan, E.
Velazquez Lozada ,ISSN: 0921-5107, Material Science and Engineering B., Vol.176, Pag.331-333, Revistas
Arbitradas ,
2011 ; DISPERSION OF PHOTOLUMINESCENCE PEAK POSITIONS EN INAS QD ASYMMETRIC
MULTI QUANTUM WELL STRUCTURES, ISSN: 1610-1634, J. L. Casas Espínola, T. V. Torchynska, G.
Polupan, and M. Ojeda Martínez, ISSN 1610-1634, phys.stat.solid.(c),, Vol.8, Pag.1388-1390, Revistas
Arbitradas ,
2011 ; ELASTIC STRESS AND EMISSION NONHOMOGENEITY IN INAS QUANTUM DOT DWELL
STRUCTURES, ISSN: 1610-1634, J.L. Casas Espinola, T V Torchynska, J Palacios Gomez, G Gómez
Gasga, A Vivas Hernandez and R. Cisneros Tamayo ISSN 1610-1634, phys.stat.solid. (c)., Vol.8, Pag.1391-
1393, Revistas Arbitradas ,
2011 ; EMISSION RELATED TO EXCITON-POLARITON COUPLING IN POROUS SIC, ISSN: 1610-1634,
T V Torchynska, A. Diaz Cano, J.A. Yescas Hernandez, Yu.V. Vorobiev, L.V. Shcherbyna, ISSN 1610-1634,
phys.stat.solid.(c)., Vol.8, Pag.1974-1977, Revistas Arbitradas ,
2011 ; EXCITON EMISSION STIMULATION AND EXCITON POLARITON COUPLING IN SIC
NANOCRYSTALS, ISSB: 1388-0764, T. V. Torchynska, A.I. Diaz Cano, J. A. Yescas Hernandez and Ye.
Shcherbyna, ISSB 1388-0764, J. Nanoparticle Research,, Vol.14, Pag.19-25, Revistas Arbitradas ,
2011 ; RADIATIVE INTERFACE STATE STUDY IN CDSE/ZNS QUANTUM DOTS COVERED BY
POLYMER, ISSN: 0921-5107, L.G. Vega Macotela, T.V. Torchynska, J. Douda, R. Pena Siera, L.
Shcherbyna ISSN: 0921-5107, Material Science and Engineering B., Vol.176, Pag.1349-1352, Revistas
Arbitradas ,
2011 ; NEW GENERATION OF OPTOELECTRONIC DEVICES BASED ON SI NANOCRYSTALS, T.V.
Torchynska,, IEEE sec. Mexico, Conference ROC&C-2011, Acapulco, 27 Nov.-3 Dic.,2011, IEEE sec.
Mexico, Conference ROC&C-2011, Vol.1, Pag.17-20, Memorias de congresos ,
2011 ; ENERGY SPECTRA OF AN ELECTRON IN A PYRAMID SHAPES QUANTUM DOT IN
EFFECTIVE MASS APPROXIMATION WITH EVEN MIRROR BOUNDARY CONDITIONS, ISBN:
978-960-474-276-9., Yu. Vorobiev, V. Vieira, P. Ribeiro, V. Gorley, P. Horley, J. Gonzales Hernandez, T.
Torchynska, 3rd WSEAS Internaational Conference on Nanotechnology, 2011, NANOTECHNOLOGY¿11,
Cambridge UK, Febrery 20-22, 2011,p. 127-131, Published by WSEAS Press, ISBN: 978-960-474-276-9.,
Nanotechnology, 2011,, Vol.1, Pag.127-131, Memorias de congresos ,
2011 ; ELASTIC STRESS AND EMISSION NONHOMOGENEITY IN SYMMETRIC INAS QUANTUM
DOT-IN-A-WELL STRUCTURES, ISBN 978-83-932197-0-4., T.V. Torchynska, E. Velazquez Lozada,
R.L. Mascorro Alquicira, Elastic Stress and Emission , Microtechnology and Thermal Problems in Electronics,
MICROTHERM 2011, June 28-July 1, 2011, Lodz, Poland, p.310-315. ISBN 978-83-932197-0-4.,
Microtechnology and Thermal Problems in Electronics, MICROTHERM 2011, ISBN 978-83-932197-0-
4., Vol.1, Pag.310-315, Memorias de congresos ,
2011 ; PHOTOLUMINESCENCE AND RAMAN SPECTRUM MODIFICATIONS IN CDSE/ZNS
QUANTUM DOTS AT THE BIOCONJUGATION TO IGG ANTIBODIES, ISBN 978-83-932197-0-4.,
T.V.Torchynska, J.L. Casas Espinola, J. Douda, A. Diaz Cano, K. Gazarian, Microtechnology and Thermal
Problems in Electronics, MICROTHERM 2011, June 28-July 1, 2011, Lodz, Poland, p.58-63. ISBN 978-83-
932197-0-4., Microtechnology and Thermal Problems in Electronics, MICROTHERM 2011,ISBN 978-
83-932197-0-4., Vol.1, Pag.58-63, Memorias de congresos ,
2011 ; CDSE/ZNS QUANTUM DOTS WITH INTERFACE STATES AS BIOSENSORS, ISBN 978-081-
9487094, T.V.Torchynska, Proceeding SPIE, 2011 Optics and Photonics, 21-25 August, 2011, San-Diego,
USA, Biosensing and Nanomedicine IV, Editors Hooman Mohseni, Massoud H.Agahi, and Manijeh Razeghi,
v.8099-0Q, DOI: 10.1117/12.893997. ISBN 978-081-9487094., Proceeding SPIE, 2011 Optics and
Photonics, ISBN 978-081-9487094, Vol.8099-, Pag.100-103, Memorias de congresos ,
2011 ; SI QUANTUM DOTS AND DIFFERENT ASPECTS OF APPLICATIONS, ISBN 978-081-9487049.,
T.V. Torchynska, Si quantum dots and different aspects of applications, Proceeding SPIE, 2011 Optics and
Photonics, 21-25 August, 2011, San-Diego, USA,Nanophotonics materials VIII, Editors Stefano Cabrini and
Taleb Mokari, v.8094-05, DOI:10.1117/12.893851. ISBN 978-081-9487049., Proceeding SPIE, 2011,
Vol.8094, Pag.5-8, Memorias de congresos ,
2011 ; QUANTUM EMISSION EFFICIENCY OF NANOCRYSTALLINE AND AMORPHOUS SI
QUANTUM DOTS, ISSN: 1386-9477, ISSN 1386-9477, J. Physica E,, Vol.44, Pag.56-61, Revistas
Arbitradas ,
2010 ; SOME ASPECTS OF EMISSION VARIATION IN INAS QUANTUM DOTS COUPLED WITH
SYMMETRIC QUANTUM WELLS, ISSN: 0021-8979., T.V.Torchynska, A. Stintz, J. Applied Physics,,
Vol.108, Pag.2431-2437, Revistas Arbitradas ,
2010 ; SCANNING PHOTOLUMINESCENCE OF INAS/INGAAS QUANTUM DOT STRUCTURES FOR
OPTICAL FIBER LASERS, ISSN: 1856-6847., E Velázquez Lozada , Tetyana Torchynska, M Dybiec, S
Ostapenko, P G Eliseev, A Stintz and K J Malloy ,, Journal of Vectorial Relativity,, Vol.5, Pag.75-77,
Revistas Arbitradas ,
2010 ; RECONSTRUCTION OF POTENTIALS IN QUANTUM DOTS AND OTHER SMALL SYMMETRIC
STRUCTURES, ISSN: 0170-4214, K. Khmelnitskaya, T.V. Torchynska,, Mathematical methods in the
Applied Sciences,, Vol.8, Pag.751-755, Revistas Arbitradas ,
2010 ; OPTICAL AND STRUCTURAL INVESTIGATION OF SI NANOCLUSTERS IN AMORPHOUS
HYDROGENATED SILICON, ISSN: 0040-6090,., Ye. S. Shcherbyna a, T.V. Torchynska,, Thin Solid
Films,, Vol.518, Pag.204-207, Revistas Arbitradas ,
2010 ; SURFACE PHONONS AND EXCITON¿POLARITON COUPLING IN SIC NANOCRYSTALS, ISSN:
0040-6090,, G. Polupan a, T.V. Torchynska,, Thin Solid Films,, Vol.518, Pag.208-211, Revistas Arbitradas ,
2010 ; PECULIARITIES OF RAMAN SCATTERING IN BIOCONJUGATED CDSE/ZNS QUANTUM
DOTS, ISSN: 0957-4484, A. Diaz Cano, S. Jiménez Sandoval, Y. Vorobiev, F. Rodriguez Melgarejo and T.
V. Torchynska,, Nanotechnology,, Vol.21, Pag.13401-13402, Revistas Arbitradas ,
2010 ; TRANSFORMATION OF PHOTOLUMINESCENCE SPECTRA AT THE BIOCONJUGATION OF
CORE-SHELL CDSE/ZNS QUANTUM DOTS, ISSN: 1610-1634, L. G. Vega Macotela, J. Douda, T. V.
Torchynska, R. Peña Sierra and L. Shcherbyna,, phys.stat.solid. (c),, Vol.7, Pag.724-727, Revistas
Arbitradas ,
2010 ; VARIATION OF RAMAN SPECTRA OF CDSE/ZNS QUANTUM DOTS AT THE
BIOCONJUGATION, ISSN: 1610-1634, L. G. Vega Macotela, T. V. Torchynska, J. Douda, and R. Peña
Sierra ,, phys.stat.solid. (c),, Vol.7, Pag.1192-1195, Revistas Arbitradas ,
2010 ; EFFECT OF BOUNDARY CONDITIONS ON THE ENERGY SPECTRA OF SEMICONDUCTOR
QUANTUM DOTS CALCULATED IN THE EFFECTIVE MASS APPROXIMATION, ISSN: 1386-
9477, Y.V. Vorobiev, P.M.Gorley, V.R.Vieira, P.P.Horley, J. Gonzalez-Herna¿ndez , T.V. Torchynska ,
A.DiazCano,, Physica E,, Vol.42, Pag.2264-2268, Revistas Indizadas ,
2010 ; SOME REASONS OF EMISSION VARIATION IN INAS QUANTUM DOT-IN-A-WELL
STRUCTURES, ISSN: 1742-6588, T.V.Torchynska, J. Palacios Gomez, G. Gomez Gasga, A. Vivas
Hernandez, E. Velazquez Lozada, G. Polupan, Ye. S. Shcherbyna,, J. of Physics, Conf. Ser., Vol.245,
Pag.12060-12063, Revistas Arbitradas ,
2010 ; MODIFICATION OF OPTICAL PROPERTIES AT BIOCONJUGATION OF CORE/SHELL
CDSE/ZNS QUANTUM DOTS, ISSN: 1742-6588, T.V.Torchynska, A.L. Quintos Vazquez, R. Pena Sierra,
K. Gazarian, L. Shcherbyna, ISSN 1742-6588, J. of Physics, Conf. Ser., Vol.245, Pag.12013-12016, Revistas
Arbitradas ,
2010 ; MECHANISM OF PHOTOLUMINESCENCE INVESTIGATION OF SI NANOCRYSTALS
EMBEDDED IN SIOX, ISBN 978-081-9481856., A. Vivas Hernandez, T.V. Torchynska, Gerrero Moreno
I.,Nanophotonics III, edited by David L. Andrews, Jean-Michel Nunzi, Andreas Ostendorf, Proceedings of
SPIE Vol. 7712 (SPIE, Bellingham, WA 2010) 771234. ISBN 978-081-9481856., Proceeding of SPIE,,
Vol.7712, Pag.34-37, Memorias de congresos ,
2010 ; EMISSION EFFICIENCY OF CRYSTALLINE AND AMORPHOUS SI NANOCLUSTERS, ISBN 978-
1-4244-5781-6, T.V. Torchynska, IEEE Proceeding of the International Semiconductor Conference, CAS
2010, Sinaia, Romania, October 11-13, 2010, v. 1, n. 5650229, p.99-102, (2010). ISBN 978-1-4244-5781-6,
IEEE Proceeding of CAS 2010,, Vol.1, Pag.99-102, Memorias de congresos ,
2010 ; , PHOTOLUMINESCENCE ANALYSIS IN SIC NANOCRYSTAL STRUCTURES PREPARED FOR
ELECTRONIC APPLICATIONS., T. Torchynska, A.I. Diaz Cano, G. Polupan, Yu,, Shcherbyna, IEEE
Conference ROC&C-2010,, Vol.1, Pag.300-307, Memorias de congresos ,
2010 ; NUMERICAL ANALYSIS OF THE PERFORMANCE OF P-I-N DIODE MICROWAVE SWITCHES
BASED ON DIFFERENT SEMICONDUCTOR MATERIALS, ISSN: 2229 - 6107, A. Iturri-Hinojosa , L.
M. Resendiz and T. V. Torchynska, Int. J. Pure Appl. Sci. Technol.,, Vol.1, Pag.93-99, Revistas Arbitradas
,
2009 ; BIOCONJUGATION AND INTERFACE STATE IN CDSE/ZNS QUANTUM DOTS, T. V. Torchynska,
Nanotechnology, ISSN 0957-4484, Vol.20, Pag.95401-95405, Revistas Arbitradas ,
2009 ; EXCITON RELATED PHOTOLUMINESCENCE STIMULATION IN SIC NANOCRYSTALS, ISSN:
0749-6036., T.V. Torchynska, G. Polupan,, Superlattice and Microstructure,, Vol.45, Pag.222-227,
Revistas Indizadas ,
2009 ; EXCITON CAPTURE AND THERMAL ESCAPE IN INAS DOT-IN-A-WELL LASER
STRUCTURES, T. Torchynska, Superlattice and Microstructure, ISSN 0749-6036, Vol.45, Pag.349-355,
Revistas Arbitradas ,
2009 ; X RAY DIFFRACTION AND EPR STUDY OF POROUS 6H-SIC, T. V. Torchynska, V. Bratus, J.
Palacios, J. Vacuum Science and Technology, B,ISSN 1071-1023. ISSN 1071-1023, Vol.27, Pag.849-853,
Revistas Arbitradas ,
2009 ; PHOTOLUMINESCENCE OF BIOCONJUGATED CORE SHELL CDSE ZNS QUANTUM DOTS, T.
Torchynska, J. Douda, P. Calva, S. Ostapenko, R Pena Siera, J. Vacuum Science and Technology, B,ISSN
1071-1023. ISSN 1071-1023, Vol.27, Pag.836-838, Publicado sin Arbitraje ,
2009 ; EMISSION OF SI NANOCLUSTERS OF DIFFERENT PHASES IN AMORPHOUS
HYDROGENATED SILICON, T. Torchynska, Superlattice and Microstructures, ISSN 0749-6036,
Vol.45, Pag.267-270, Revistas Arbitradas ,
2009 ; PHOTOLUMINESCENCE VARIATION IN DWELL STRUCTURES WITH DIFFERENT INAS
QUANTUM DOT DENSITIES, T. Torchynska, E. Velazquez Lozada, J. L. Casas Espinola., J. Vacuum
Science and Technology, B,ISSN 1071-1023. ISSN 1071-1023, Vol.27, Pag.919-922, Revistas Arbitradas ,
2009 ; PHOTOLUMINESCENCE OF CDSE/ZNS CORE SHELL QUANTUM DOTS OF DIFFERENT SIZES
(ISSN 1610-1634)., T. Torchynska, J. Douda, R. Pena Siera, phys. stat. solid. (c), (ISSN 1610-1634)., Vol.6,
Pag.143-145, Revistas Arbitradas ,
2009 ; MULTIEXITED STATE STUDY IN INAS DWELL STRUCTURES, ISSN: 0921-5107, J. Casas
Espinola, T. Torchynska, G. Polupan, E. Velazquez Lozada, Material Science and Engineering B,, Vol.152,
Pag.315-320, Revistas Arbitradas ,
2009 ; BIOCONJUGATION AND INTERFACE STATE IN CDSE/ZNS QUANTUM DOTS, ISSN: 0957-4484.,
T. V. Torchynska, Nanotechnology,, Vol.20, Pag.95401-0, Revistas Indizadas ,
2009 ; X-RAY DIFRACTION AND EPR STUDY OF POROUS 6H-SIC. ISSN: 1071-1023., T. V. Torchynska,
V. Bratus, J. Palacios Gomez,, J. Vacuum Science & Technology B, Vol.27, Pag.849-852, Revistas
Indizadas ,
2009 ; PHOTOLUMINESCENCE VARIATION IN DWELL STRUCTURES WITH DIFFERENT INAS
QUANTUM DOT DENSITIES, ISSN: 1071-1023., T.V. Torchynska, E. Velazquez Lozada, J.L. Casas
Espinola,, J. Vacuum Science & Technology B, Vol.27, Pag.919-922, Revistas Indizadas ,
2009 ; PHOTOLUMINESCENCE OF BIOCONJUGATED CORE/SHELL CDSE/ZNS QUANTUM DOTS,
ISSN: 1071-1023, T.V. Torchynska, J. Douda, P. A. Calva, S. S. Ostapenko, R.Pena Siera,, J. Vacuum
Science & Technology B, Vol.27, Pag.836-838, Revistas Indizadas ,
2009 ; EMISSION OF SI NANOCLUSTERS OF DIFFERENT PHASES IN AMORPHOUS
HYDROGENATED SILICON, ISSN: 0749-6036, T.V. Torchynska,, Superlattice and Microstructure,,
Vol.45, Pag.267-270, Revistas Indizadas ,
2009 ; EXCITON CAPTURE AND THERMAL ESCAPE IN INAS DOT-IN-A-WELL LASER
STRUCTURES, ISSN: 0749-6036., T.V. Torchynska,, Superlattice and Microstructure, Vol.45, Pag.349-
355, Revistas Indizadas ,
2009 ; EXCITON RELATED PHOTOLUMINESCENCE STIMULATION IN SIC NANOCRYSTALS, T. V.
Torchynska, G. Polupan, Superlattice and Microstructures, ISSN 0749-6036, Vol.45, Pag.222-227,
Revistas Arbitradas ,
2008 ; CORRELATION BETWEEN THE PHOTOLUMINESCENCE AND DIFFERENT TYPES OF SI
NANOCLUSTERS IN AMORPHOUS SILICON, T. V. Torchynska, A. L. Quintos Vazquez, G. Polupan,
Yasuhiro Matsumoto, L. Khomenkova and L. Shcherbyna,, J. Non-Crystal. Solids, ISSN 0022-3093,
Vol.354, Pag.2186-2189, Revistas Arbitradas ,
2008 ; ROLE OF BALLISTIC TRANSPORT IN PHOTOLUMINESCENCE EXCITATION OF SI
NANOCRYSTALS,, T. V. TORCHYNSKA, J. Non-Crystal. Solids, ISSN 0022-3093, Vol.354, Pag.2296-
2299, Revistas Arbitradas ,
2008 ; POROUS SIC LAYERS ON SI NANOWIRE SURFACE,, A. I. Diaz Cano, T. V. Torchynska, J. E. Urbina-
Alvarez, G. R. Paredes Rubioc, S. Jimenez Sandoval, Y. V. Vorobiev,, Microelectronic journal, ISSN 0026-
2692, Vol.39, Pag.507-511, Revistas Arbitradas ,
2008 ; OPTICAL AND STRUCTURAL PROPERTIES OF SIC NANOCRYSTALS, M. Moralez Rodriguez, A.
I. Diaz Cano, T. V. Torchynska, J. Palacios Gomez, G. Gomez Gasga, G. Polupan, M. Mynbaeva,, J. Material
Science. Material in Electronics,ISSN 0957-4522, Vol.19, Pag.682-686, Revistas Arbitradas ,
2008 ; COMPARATIVE INVESTIGATION OF OPTICAL AND STRUCTURAL PROPERTIES OF
POROUS SIC, MICROELECTRONIC JOURNAL, M. Moralez Rodriguez, J. M. Rivas, A. I. Diaz Cano,
T. V. Torchynska, J. Palacios Gomez, G. Gomez Gasga, M. Mynbaeva, Microelectronic J. ISSN 0026-2692,
Vol.39, Pag.494-498, Revistas Arbitradas ,
2008 ; SIZE DEPENDENT PHOTOLUMINESCENCE OF SI NANO-CRYSTALS EMBEDDED IN
AMORPHOUS SILICON,, A. L. Quintos Vazquez, T. V. Torchynska, G. Polupan, Yasuhiro Matsumoto, L.
Khomenkova and L. Shcherbyna,, Solid State Phenomena, ISSN 1012-0394, Vol.131-1, Pag.71-76, Revistas
Arbitradas ,
2008 ; SIZE DEPENDENT PHOTOLUMINESCENCE OF SIC NANOCRYSTALS,, M. Moralez Rodriguez, A.
I. Diaz Cano, T. V. Torchynska, G. Polupan, S. Ostapenko,, J. Non-Crystal. Solids, ISSN 0022-3093,
Vol.354, Pag.2272-2275, Revistas Arbitradas ,
2008 ; PHOTOLUMINESCENCE OF DIFFERENT PHASE SI NANOCLUSTERS IN AMORPHOUS
HYDROGENATED SILICON,(ISBN 978-1-60511-077-6), T.V.TORCHYNSKA, MRS-Spring Meeting,
San Francisco, CA, USA, March 24-28, 2008., Vol.1066, Pag.131-134, Memorias de congresos ,
2008 ; SOME ASPECTS OF EXCITON THERMAL EXCHANGE IN INAS QDS COUPLED WITH
INGAAS/GAAS QUANTUM WELLS, T. V. Torchynska, J. Applied Physics, ISSN 0021-8979, Vol.104,
Pag.74315-74315, Revistas Arbitradas ,
2008 ; RAMAN SCATTERING STUDY IN BIO-CONJUGATED CORE-SHELL CDSE/ZNS QUANTUM
DOTS,, T. V. Torchynska, J. Douda, S. S. Ostapenko, S. Jimenez-Sandoval, C. Phelan, A. Zajac, T. Zhukov,
T. Sellers,, J. Non-Crystal. Solids,ISSN 0022-3093, Vol.354, Pag.2885-2887, Revistas Arbitradas ,
2007 ; EXCITON THERMAL ESCAPE IN SYMMETRIC INAS QUANTUM DOTS IN INGAAS/GAAS
WELL STRUCTURES, (ISSN 1610-1634)., J. L. Casas Espinola, T. V. Torchynska, G. Polupan, R. Pena
Sierra,, phys. stat. sol. (c), (ISSN 1610-1634)., Vol.4, Pag.379-381, Revistas Arbitradas ,
2007 ; LOCALIZATION OF DEFECTS IN INAS QD SYMMETRIC INGAAS-GAAS DWELL
STRUCTURES,, T. V. Torchynska, J. L. Casas Espinola, E. Velasquez Lozada, L. V. Shcherbyna, A. Stinz,
R. Pena Sierra,, Physica B: Condensed Matter, ISSN 0921-4526, Vol.401, Pag.584-586, Revistas
Arbitradas ,
2007 ; GROUND AND EXCITED STATE PHOTOLUMINESCENCE MAPPING ON IN/INGAAS
QUANTUM DOT STRUCTURES, INTERNACIONAL JOURNAL OF NANOSCIENCE, (ISSN 0219-
581X), T. V. Torchynska, E. Velazquez Lozada, M. Dybic, S. Ostapenko P. G. Eliseev, A. Stintz, K. J. Malloy,
R. Pena Sierra,, Internacional Journal of Nanoscience, ISSN 0219-581X, Vol.6, Pag.383-387, Revistas
Arbitradas ,
2007 ; PHOTOLUMINESCENCE ENERGY TREND FOR GROUND AND EXCITED STATES IN INAS
QUANTUM DOTS IN INGAAS/GAAS QW STRUCTURES (ISSN 1610-1634)., E. Velasquez Lozada, T.
V. Torchynska, S. Ostapenko, M. Dybic, A. Stintz, P. G. Eliseev, K. J. Malloy,, phys. stat. sol. (c),(ISSN
1610-1634)., Vol.4, Pag.272-275, Revistas Arbitradas ,
2007 ; BALLISTIC EFFECT AND OPTICAL PROPERTIES OF SI NANOCRYSTALLITE STRUCTURES,
(ISSN 1610-1634)., T. V. TORCHYNSKA, phys. stat. sol. (c), (ISSN 1610-1634)., Vol.4, Pag.375-378,
Revistas Arbitradas ,
2007 ; RAMAN SCATTERING AND SEM STUDY OF BIO-CONJUGATED CORE-SHELL CDSE/ZNS
QUANTUM DOTS (ISSN 1610-1634)., T. V. Torchynska, A. Diaz Cano, M. Dybic, S. Ostapenko, M.
Morales Rodrigez, S. Jimenes Sandoval, Y. Vorobiev, C. Phelan, A. Zajac, T. Zhukov, T. Sellers,, phys. stat.
sol. (c), (ISSN 1610-1634)., Vol.4, Pag.241-243, Revistas Arbitradas ,
2007 ; THERMAL ACTIVATION OF EXCITONS IN ASYMMETRIC INAS DOTS-IN-A-WELL
INGAAS/GAAS STRUCTURES,, T. V. Torchynska, J. L. Casas Espinola, L. V. Borkovska, S. Ostapenko,
M. Dybic, O. Polupan, N. O. Korsunska, A. Stintz, P. G. Eliseev, K. J. Malloy,, J. of Applied Physics, ISSN
0021-8979, Vol.11101, Pag.24323-24327, Revistas Arbitradas ,
2007 ; OPTICAL AND STRUCTURAL EVALIATION OF SIC NANOCRYSTALLITES, (ISSN 1742-6588),
A. I. Diaz Cano, T. V. Torchynska, M. Moralez Rodriguez, S. Jimenez Sandoval, M. Mynbaeva, J. of Physics:
Conference Series, ISSN 1742-6588, Vol.61, Pag.243-246, Revistas Arbitradas ,
2007 ; EMISSION AND STRUCTURE INVESTIGATIONS OF SI NANO-CRYSTALS EMBEDDED IN
AMORPHOUS SILICON, J. OF PHYSICS: CONFERENCE SERIES (ISSN 1742-6588), A.Vivas
Hernandez, T. V. Torchynska, A. L. Quintos Vazquez, Yasuhiro Matsumoto, L. Khomenkova and L.
Shcherbina,, J. of Physics: Conference Series,ISSN 1742-6588, Vol.611, Pag.545-548, Revistas Arbitradas
,
2007 ; CARRIER DYNAMICS IN INAS QUANTUM DOTS EMBEDDED IN INGAAS-GAAS MULTI
QUANTUM WELL STRUCTURES,(ISSN 1742-6588), J. L. Casas Espinola, M. Dybiec, S. Ostapenko, T.
V. Torchynska and G. Polupan,, J. of Physics: Conference Series, ISSN 1742-6588, Vol.61, Pag.180-184,
Revistas Arbitradas ,
2006 ; PHOTOLUMINESCENCE SCANNING ON INAS/INGAAS QUANTUM DOT STRUCTURES, M.
Dybiec, L. Borkovska, S. Ostapenko, T. V. Torchynska, J. L. Casas Espinola, A. Stintz and K. J. Malloy,,
Appl. Surf. Science, ISSN 0169-4332, Vol.4, Pag.5542-5545, Revistas Arbitradas ,
2006 ; STIMULATION OF EXCITONIC AND DEFECT-RELATED LUMINESCENCE IN POROUS SIC,,
T.V.Torchynska, A. Diaz Cano, M.Dybic, S. Ostapenko, M.Mynbaeva,, Physica B, ISSN 0921-4526, Vol.3,
Pag.367-369, Revistas Arbitradas ,
2006 ; PHOTOLUMINESCENCE OF SILICON NANOSRYSTALLITES IN DIFFERENT TYPES OF
MATRIXES,, T. V. TORCHYNSKA, J. Non Crystaline Solids, ISSN 0022-3093, Vol.5, Pag.1130-1135,
Revistas Arbitradas ,
2006 ; PHOTOLUMINESCENCE OF SI OR GE NANOCRYSTALLITES EMBEDDED IN SILICON
OXIDE, T.V.Torchynska, A. Vivas Hernandez, Y. Goldstein, J. Jedrzejewskii, S,Jimenez Sandoval, J.Non
Cryst.Solids, ISSN 0022-3093, Vol.4, Pag.1152-1155, Revistas Arbitradas ,
2006 ; PHOTOLUMINESCENCE AND STRUCTURE INVESTIGATIONS ON SI NANO-CRYSTALS IN
AMORPHOUS SILICON MATRIZ, T. V. Torchynska, A.Vivas Hernandez , Yasuhiro Matsumoto , L.
Khomenkova and L. Shcherbina,, J.Non-Crystaline Solids,ISSN 0022-3093, Vol.352, Pag.1188-1191,
Revistas Arbitradas ,
2005 ; GROUND AND EXCITED STATE ENERGY TREND IN INAS/INGAAS QUANTUM DOTS
MONITORED BY SCANNING PHOTOLUMINESCENCE SPECTROSCOPY,, T. V. Torchynska, M.
Dybiec, S. Ostapenko,, Phys. Rev. B, ISSN 1098-0121, Vol.7, Pag.95341-95347, Revistas Arbitradas ,
2005 ; RAMAN SCATTERING CHARACTERIZATION OF MACRO AND NANOPOROUS SILICON,, N.
Korsunska, B. Bulakh, B. Jumayev, L. Khomenkova, V. Yukhymchuk and T. Torchynska,, Appl. Surf.
Scien.ISSN 0169-4332, Vol.5, Pag.315-319, Revistas Arbitradas ,
2005 ; RADIATIVE CHANNEL COMPETITION IN SILICON NANOCRYSTALLITES, N. Korsunska, L.
Khomenkova, M. K. Sheinkman, T. Stara, V. Yuhimchuk, T. V. Torchynska, A. Vivas Hernandez,, J.
Luminescence, ISSN 0022-2313, Vol.5, Pag.117-121, Revistas Arbitradas ,
2005 ; PHOTOLUMINESCENCE AND PHOTOCURRENT OF SCHOTTKY DIODES BASED ON SILICON
NANOCRYSTALLITES (ISSN 1610-1634)., A. Vivas Hernandez, T. V. Torchynska, G. Polupan, S.
Jiménez-Sandoval, R. Pena Sierra, > Estrada Cueto, G. R. Paredes Rubio,, phys. stat. solid. (c), (ISSN 1610-
1634)., Vol.4, Pag.3019-3022, Revistas Arbitradas ,
2005 ; DEFECT AND NANO-CRYSTALLITE PHOTOLUMINESCENCE IN SI-SIO2 SYSTEMS, (ISSN
1610-1634)., F. G. Becerril Expinoza, T. V. Torchynska, N. Korsunska, L. Khomenkova, Y.Goldstein, E.Savir,
J.Jedrzejewski,, phys. stat. solid. (c), (ISSN 1610-1634)., Vol.4, Pag.2990-2993, Revistas Arbitradas ,
2005 ; RAMAN SCATTERING INVESTIGATION ON POROUS SIC LAYES, (ISSN 1610-1634)., T. V.
Torchynska, M. Morales Rodriges, A. Vivas Hernandez, G. Polupan, S. Jiménez-Sandoval, S. Ostapenko and
M. Mynbaeva,, phys. stat. sol. (c), (ISSN 1610-1634)., Vol.4, Pag.2962-2965, Revistas Arbitradas ,
2005 ; PHOTOLUMINESCENCE MAPPING ON INAS/INGAAS DOT STRUCTURES (ISSN 1610-1634)., M.
Dybiec, S. Ostapenko, T. V. Torchynska, E.Velasquez Lozada, P. G. Eliseev, A. Stintz, K. J. Malloy,, phys.
stat. sol. (c), (ISSN 1610-1634)., Vol.4, Pag.2951-2954, Revistas Arbitradas ,
2005 ; MAGNETIC FIELD EFFECT ON THE VISIBLE PHOTOLUMINESCENCE OF POROUS SILICON,
(ISSN 1610-1634)., T.V. Torchynska, A.Diaz Cano, L.Y. Khomenkova, V.N. Zakharchenko, R.V.
Zakharchenko, J. González-Hernández, Y.V. Vorobiev,, phys.stat.sol., (c), (ISSN 1610-1634)., Vol.5,
Pag.3314-3315, Revistas Arbitradas ,
2005 ; MULTIPLE EXCITED STATE MODIFICATION IN INAS/INGAAS QUANTUM DOT
STRUCTURES AT HIGH EXVITATION POWER,, T.V.Torchynska, H.M.Alfaro Lopez, J.L. Casas
Espinola, P.G.Eliseev, A. Stintz, K.J. Malloy, R. Pena Sierra,, Microelectronics J., ISSN 0026-2692, Vol.4,
Pag.186-189, Revistas Arbitradas ,
2005 ; OPTICAL INVESTIGATION OF SI NANO-CRYSTALS IN AMORPHOUS SILICON MATRIX,, A.
Vivas Hernandez, T.V.Torchynska, Y. Matsumoto, S. Jiménez Sandoval, M. Dybic, S. Ostapenko, L.V.
Shcherbyna,, Microelectronics, ISSN 0026-2692, Vol. , Pag.510-513, Revistas Arbitradas ,
2005 ; PHOTOLUMINESCENCE AND RAMAN SPECTROSCOPY IN POROUS SIC, T.V.Torchynska, A.
Diaz Cano, S. Jiménez Sandoval, M.Dybic, S. Ostapenko, M.Mynbaeva,, Microelectronics, ISSN 0026-2692,
Vol.3, Pag.536-538, Revistas Arbitradas ,
2005 ; OPTICAL PROPERTIES OF POROUS SILICON SURFACE,, E. Chambon, E. Florentin, T. Torchynska,
J. Gonzalez Hernandez, Y. Vorobiev,, Microelectronics, ISSN 0026-2692, Vol.4, Pag.514-517, Revistas
Arbitradas ,
2005 ; OPTICAL CHARACTERIZATION OF CRYSTALLINE SILICON EMBEDDED IN A-SI MATRIX,
(ISSN 1610-1634)., T.V.Torchynska, A. Vivas Hernandez, M.Dybiac, I.Tarasov, Y.phys. stat. sol. (c),(ISSN
1610-1634)., Vol.5, Pag.1832-1836, Revistas Arbitradas ,
2005 ; RAMAN SCATTERING AND STRUCTURE INVESTIGATION ON POROUS SIC LAYERS,, T. V.
Torchynska, A. Vivas Hernandez, A. Diaz Cano, S. Jiménez-Sandoval, S. Ostapenko, M. Mynbaeva,, J. Appl.
Phys. ISSN 0021-8979, Vol.6, Pag.33507-33512, Revistas Arbitradas ,
2005 ; PHOTOLUMINESCENCE AND PHOTOCURRENT OF POROUS SILICON SCHOTTKY
BARRIERS,, T. V. Torchynska, A. Vivas Hernandez, G. Polupan, S. Jimenez Sandoval, M. Estrada Cueto, R.
Pena Sierra and G. R. Paredes Rubio,, Thin Solid Films, ISSN 0040-6090, Vol.5, Pag.327-331, Revistas
Arbitradas ,
2004 ; SI WIRE LIGHT EMISSION CHANGES DURING SI-SIOX INTERFACE FORMATION (ISBN 1-
55899-758-X), F.G. Becerril Espinoza, T. Torchynska, M. Morales Rodriguez, L. Khomenkova, L. V.
Shcherbyna, 2004 MRS American Symposium Proceeding, Vol.808, Pag.5-10, Memorias de congresos ,
2004 ; VISIBLE PHOTOLUMINESCENCE OF GE ENRICHED SIOX LAYERS,, T.V.Torchynska, A.Vivas
Hernandez, A.V.Kolobov, Y.Goldstein, E.Savir, J.Jedrzejewski,, J. Electr. Spectroscopy and Related
Phenomena, ISSN 0368-2048, Vol.137, Pag.619-623, Revistas Arbitradas ,
2004 ; SHELL MODEL OF SEMICONDUCTOR QUANTUM DOTS (ISBN 978 081 9436016), P.G.Eliseev,
D.P. Popescu, T.V.Torchynska, K.J.Malloy, A.Stintz, Proc. SPIE Congress, USA, Vol.5349, Pag.46-53,
Memorias de congresos ,
2004 ; SCANNING PHOTOLUMINESCENCE SPECTROSCOPY IN INAS/INGAAS QUANTUM DOT
STRUCTURES,, M. Dybiec, S. Ostapenko, T. V. Torchynska, E.Velasquez Losada,, Appl. Phys. Lett. ISSN
0003-6951, Vol.3, Pag.5165-5167, Revistas Arbitradas ,
2004 ; HOT ELECTRON EFFECTS IN EXCITATION OF VISIBLE PHOTOLUMINESCENCE IN SI
NANOWIRES, (ISSN 1109-9445), T. Torchynska, L. Khomenkova, V. Zakharchenko, R. Zakharchenko, J.
Gonzalez Hernandez, Y. Vorobiev,, WSEAS Transactions on Electronics, ISSN 1109-9445, Vol.6, Pag.1-5,
Revistas Arbitradas ,
2004 ; HIGH EFFICIENCY SOLAR CELLS FOR SPACE APPLICATIONS, (ISSN 1665-3521),
T.V.Torchynska, G. Polupan,, Superficio y Vacio, Vol.5, Pag.22-26, Revistas Arbitradas ,
2003 ; SPACIALLY RESOLVED PHOTOLUMINESCENCE AND THERMALLY STIMULATED
LUMINESCENCE OF SEMI-INSULATED SIC WAFERS,, S. Ostapenko, S. Lulu, I. Tarasov, S. Saddow,
T. Torchynska, ISBN: 1-55899-679-6, Proceeding of 2002 American MRS Congress, Vol.5, Pag.103-108,
Memorias de congresos ,
2003 ; MULTI SHELL PHOTOLUMINESCENCE FROM INAS/INGAAS QUANTUM DOTS,
T.V.Torchynska,, Proc. SPIE Congress (USA), Vol.8, Pag.21-28, Memorias de congresos ,
2003 ; THERMAL QUENCHING OF EMISSION OF SELF ESSEMBLED INAS QUANTUM DOTS, T,
Torchynska, J, Casas Espinola, H. Alfaro Lopez, P. Eliseev, A. Stinz, Inst. of Physics, Conf, Series,ISSN
1742-6588, Vol.174, Pag.69-71, Revistas Arbitradas ,
2003 ; OPTICAL AND STRUCTURAL INVESTIGATION OF GE-SIO2 SYSTEMS, T, Torchynska, G.
Polupan, J. Aqualar, A. Kolobov, Ins. of Physics, Conference ser.ISSN 1742-6588, Vol.174, Pag.65-67,
Revistas Arbitradas ,
2003 ; BALLISTIC EFFECT AND PHOTOLUMINESCENCE EXCITATION IN POROUS SILICON,
T.V.TORCHYNSKA, M.Morales Rodrigez, L.Yu. Khomenkova,, SURFACE SCIENCE, ISSN 0039-6028,
Vol.5, Pag.1204-1208, Revistas Arbitradas ,
2003 ; METASTABLE DEFECTS IN SI3N4 LAYERS ACCESSED BY SCANNING
PHOTOLUMINESCENCE, I. TARASOV, M.DYBIEC, T.V.TORCHYNSKA, S.OSTAPENKO,
PHYSICA B.Condensed Matter, ISSN 0921-4526, Vol.5, Pag.1117-1121, Revistas Arbitradas ,
2003 ; LOCALIZED EXCITONS IN INAS SELF ASSEMBLED QUANTUM DOTS EMBEDDED IN
INGAAS-GAAS MULTIQUANTUM WELLS,, T. V. TORCHYNSKA, J. L. CASAS ESPINOZA, P. G.
ELISEEV, A. STINTZ, K. J. MALLOY, R. PENA SIERRA,, PHYS. STAT. SOL. (A), ISSN 1862-6300,
Vol.5, Pag.209-213, Revistas Arbitradas ,
2003 ; HOT CARRIERS AND EXCITATION OF SISIOX INTERFACE DEFECT PHOTOLUMINESCENCE
IN SI NANOCRYSTALLITES, T.V.TORCHYNSKA,, PHYSICA B, Condensed Matter, ISSN 0921-
4526, Vol.5, Pag.1204-1208, Revistas Arbitradas ,
2003 ; FORMATION OF SISIOX INTERFACE AND ITS INFLUENCE ON PHOTOLUMINESCENCE OF
SI NANOCRYSTALLITES,, F.G.BECERRIL EXPINOZA, T.V.TORCHYNSKA, M.MORALES
RODRIGEZ, L.KHOMENKOVA, L.V.SCHERBINA,, MICROELECTRONICS, ISSN 0026-2692, Vol.3,
Pag.759-761, Revistas Arbitradas ,
2003 ; PHOTOLUMINESCENCE OF GE NANOCRYSTALLITES EMBEDDED IN SILICON OXIDE,,
T.V.TORCHYNSKA, G.POLUPAN, J.PALACIOS GOMEZ, A.V.KOLOBOV,,
MICROELECTRONICS,ISSN 0026-2692, Vol.3, Pag.541-543, Revistas Arbitradas ,
2003 ; BALLISTIC REGIME AND PHOTOLUMINESCENCE EXCITATION IN SI WIRES AND DOTS,,
T.V.TORCHYNSKA, M. Morales Rodriguez, A. Vivas Hernandez, K. W. Cheah, J.OF
LUMINESCENCE,ISSN 0022-2313, Vol.6, Pag.551-556, Revistas Arbitradas ,
2003 ; MECHANISM OF PHOTOLUMINESCENCE OF SILICON OXIDE FILMS ENRICHED BY SI OR
GE,, T.V.TORCHYNSKA, Y.GOLDSTEIN, A.MANY, J.JEDRZEJEWSKII, A.V.KOLOBOV,,
MICROELECTRONICS ENGINEERING,ISSN 0022-2313, Vol.7, Pag.83-90, Revistas Arbitradas ,
2003 ; BALLISTIC EFFECT AND NEW CONCEPT OF SI WIRE PHOTOLUMINESCENCE,,
T.V.TORCHYNSKA,, MICROELECTRONICS ENGINEERING,ISSN 0022-2313, Vol.6, Pag.17-25,
Revistas Arbitradas ,
2003 ; PHOTOLUMINESCENCE AND ITS EXCITATION MECHANISMS IN SI WIRES AND DOTS,,
T.V.TORCHYNSKA, J.AGUILAR HERNANDEZ, A.I.DIAZ CANO, F.G.BACARRILESPINOZA,, PHYS.
STAT. SOL. (A),ISSN 1862-6300, Vol.6, Pag.382-387, Revistas Arbitradas ,
2003 ; PHOTOLUMINESCENCE OF SILICON OXIDE FILMS ENRICHED BY SI OR GE,,
T.V.TORCHYNSKA, J. AGUILAR HERNANDEZ, L. SCHACHT HERNANDEZ,, J.LUMINESCENCE,
ISSN 0022-2313, Vol.5, Pag.557-561, Revistas Arbitradas ,
2003 ; NATURE OF VISIBLE LUMINESCENCE AND ITS EXCITATION IN SISIOX SYSTEMS,,
T.V.TORCHYNSKA, Y.GOLDSTEIN, A.MANY, J.JEDRZEJEWSKII, N.E.KORSUNSKAYA,
L.YU.KHOMENKOVA, B.M.BULAKH,, J.LUMINESCENCE,ISSN 0022-2313, Vol.6, Pag.705-711,
Revistas Arbitradas ,
2003 ; THERMAL IONISATION OF GROUND AND MULTIPLI EXITED STATES IN INAS QUANTUM
DOTS EMBEDDED INTO INGAAS MQW,, T. V. TORCHYNSKA, SURFACE SCIENCE, ISSN 0039-
6028, Vol.4, Pag.848-851, Revistas Arbitradas ,
2003 ; NATURE OF VISIBLE LUMINESCENCE OF SI CO-SPUTTERED SI-SIOX SYSTEMS,
T.TORCHYNSKA, F.BECERRIL ESPINOZA, Y.GOLDSTEIN, E.SAVIR, J.JEDRZEJEWSKI,
L.KHOMENKOVA, N.KORSUNSKA, Y.YUKHIMCHUK, PHYSICA B.,Condensed Matter, ISSN 0921-
4526, Vol.6, Pag.1113-1118, Revistas Arbitradas ,
2003 ; PHOTOLUMINESCENCE OF INAS QUANTUM DOT STRUCTURES FOR OPTICAL FIBER
LASER, T.V.Torchynska, E.Velasquez Lozada, M.Dubiec, S.Ostapenko, P.G.Eliseev, A.Stinz, K.J.Malloy,, 7
Congresso Nacional Ingeneria Mecanica y Electrica del IPN,, Vol.2, Pag.115-117, Memorias de
congresos ,
2003 ; PHOTOLUMINESCENCE OF SILICON OXIDE FILMS ENRICHED BY SI AND GE, T. Torchynska,
J. Aquilar, L. Sanches, Y. Goldstein, A. Many, A.V. Kolobov, J. Luminecence, ISSN 0022-2313, Vol.102,
Pag.557-561, Revistas Arbitradas ,
2002 ; COMPARATIVE INVESTIGATION OF PHOTOLUMINESCENCE OF SILICON WIRE
STRUCTURES AND SILICON OXIDE FILMS,, T.V.TORCHYNSKA, J.AGUILAR HERNANDEZ,
M.MORALES RODRIGUEZ, C.MEJIA GARCIA, G.CONTRERAS PUENTE, F.G.BACARRIL
ESPINOZA,, J.PHYS.CHEM.SOLIDS, ISSN: 0022-3697, Vol.6, Pag.561-568, Revistas Arbitradas ,
2002 ; BALLISTIC REGIME AND PHOTOLUMINESCENCE IN SILICON NANOCRYSTALLITES,, T. V.
Torchynska, J. Appl. Phys. ISSN 0021-8979, Vol.5, Pag.4019-4023, Revistas Arbitradas ,
2002 ; BALLISTIC EFFECT AND RED PHOTOLUMINESCENCE OF SI WIRES. ., T.V.TORCHYNSKA,
M.MORALES RODRIGUEZ, F.G.BACARRILESPINOZA, N.E.KORSUNSKAYA, L.YU.KHOMENKOVA,
L.V.SCHERBINA,, PHYS. REV.B, ISSN 1098-0121, Vol.65, Pag.11531-11532, Revistas Arbitradas ,
2002 ; THE INTERRELATION OF SURFACE RELIEF OF POROUS SILICON WITH SPECIFIC
FEATURES OF RAMAN SPECTRA,, O.S.LYTVYN, T.V.TORCHYNSKA, L.YU.KHOMENKOVA,
V.A.YUKHIMCHUK,, SEMICONDUCTORS, ISSN 1063-7826, Vol.5, Pag.558-563, Revistas Arbitradas ,
2002 ; USXES AND OPTICAL PHENOMENA IN SI LOW DIMENSIONAL STRUCTURES DEPENDENT
ON MORPHOLOGY AND SILICON OXIDE COMPOSITION ON SI SURFACE,, T. V.
TORCHYNSKA, M.MORALES RODRIGUEZ, G. P.POLUPAN,L.I.KHOMENKOVA, E.P.
DOMASHEVSKAYA,, SURFACE REVIEW AND LETTERS, ISSN: 0218-625X, Vol.4, Pag.1047-1051,
Revistas Arbitradas ,
2002 ; DEFECT RELATED LUMINESCENCE OF SI SIO2 LAYERS,, L.KHOMENKOVA, N.KORSUNSKA,
T.TORCHYNSKA, Y.YOKHIMCHUK, B.JUMAYEV, A.MANY, Y.GOLDSTEIN, E.SAVIR,
J.JEDRZEJEWSKI,, J.PHYS. CONDENS. MATTER., ISSN 0953-8984, Vol.4, Pag.13217-13221, Revistas
Arbitradas ,
2002 ; PHOTOLUMINESCENCE AND SURFACE STRUCTURE INVESTIGATIONS OF SILICON LOW
DIMENSIONAL SYSTEMS, J.AGUILARHERNANDEZ, T.V.TORCHYNSKA,
F.G.BACARRILESPINOZA, M.MORALES RODRIGUEZ, J.PALACIOS GOMEZ, MATERIAL
SCIENCE LETTERS, ISSN 0368-2048, Vol.4, Pag.2061-2064, Revistas Arbitradas ,
2002 ; DEFECT RELATED PHOTOLUMINESCENCE IN SI WIRES,, T. TORCHYNSKA, J.
AGUILARHERNANDEZ, A.I.DIAZ CANO, G. CONTRERASPUENTE, F.G. BECERRIL ESPINOZA,,
PHYSICA B, Condensed Matter, ISSN 0921-4526, Vol.5, Pag.1108-1112, Revistas Arbitradas ,
2002 ; THERMAL QUENCHING OF EMISSION OF SELF-ASSEMBLED INAS QUANTUM DOTS
EMBEDDED IN INGAAS WQW,, T.V.Torchynska, J.L.Casas Espinola, R.Pena Sierra, 29th International
Symposium on Compound Semiconductors, ISCS 2002, , Lausanne, Switzerland,, Vol. , Pag.65-67,
Memorias de congresos ,
2002 ; OPTICAL AND STRUCTURAL INVESTIGATION OF GESIO2 SYSTEMS,, T.V.Torchynska, 29th
International Symposium on Compound Semiconductors, ISCS 2002, Lausanne, Switzerland,, Vol.3,
Pag.69-71, Memorias de congresos ,
2002 ; INVESTIGACION DE LA RESPUESTA ESPECTRAL DE LA FOTOCORRIENTE EN
ESTRUCTURAS DE NANOCRISTALES DEL TIPO SI POROSO, PARA SU APLICACION EN
CELDAS SOLARES PARA SATELITES DE TELECOMUNICACIONES., A.Vivas Hernandez,
T.V.Torchynska,, 2 Congreso Internacional de Ingeniria ElectroMecanica y de Sistemas,, Vol.3, Pag.31-
33, Memorias de congresos ,
2002 ; MULTIPLE EXCITED STATE EMISSION AND ITS THERMAL QUENCHING IN INAS/INGAAS
QDS,, T.V.Torchynska, J.L.Casas Espinola, .Pena Sierra, 8 Conferencia de Ingenieria Electrica de
CINVESTAV, Vol.4, Pag.468-471, Memorias de congresos ,
2002 ; BALLISTIC EFFECT AND PHOTOLUMINESCENCE EXCITATION IN SI WIRES,, T.V.Torchynska,
7-th Intern. Conference of nanometer scale science and technology, NAO-7Malmo, Sweden, Vol.3,
Pag.305-307, Memorias de congresos ,
2002 ; THERMAL IONIZATION OF MULTIPLY EXCITED STATES IN INAS SELF-ASSEMBLED
QUANTUM DOTS EMBEDDED INTO INGAAS/GAAS MQW, T.V.Torchynska, J.L.Casas Espinola,
E.Velasquez Losada,, 7-th Intern. Conference of nanometer scale science and technology, NAO-7Malmo,
Sweden, Vol.3, Pag.207-209, Memorias de congresos ,
2002 ; PHOTOLUMINESCENCE AND ITS EXCITATION MECHANISM IN SI WIRES AND DOTS,,
T.V.Torchynska, 3-rd Int. Conf. Porous semiconductors, Science and Technology, Spain, Vol.3, Pag.294-
297, Memorias de congresos ,
2002 ; FORMATION OF THE SI/SIO INTERFACE AND ITS INFLUENCE ON THE POROUS SILICON
PHOTOLUMINESCENCE,, T.V.Torchynska,, 3-rd Int. Conf. Porous semiconductors, Science and
Technology, Spain,, Vol.3, Pag.315-317, Memorias de congresos ,
2002 ; IIIV MATERIAL SOLAR CELLS FOR SPACE APPLICATION,, T. V. TORCHYNSKA, G. Polupan
ISSN 1605-6582, J. OF SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS, Vol.7, Pag.61-65,
Revistas Arbitradas ,
2001 ; APPLICATION OF III-V MATERIALS IN SPACE SOLAR CELL ENGINEERING, T. Torchynska, G.
Polupan, E. Shcherbyna, Modern Physics Letters, ISSN: 0217-7323, Vol.15, Pag.593-596, Revistas
Arbitradas ,
2001 ; OPTICAL AND STRUCTURE STUDIES OF SILICON LOW-DIMENSIONAL SYSTEMS,,
T.V.Torchynska, 25-th International Conference on Physics of Semiconductors, Osaka, Japan,, Vol.3,
Pag.311-313, Memorias de congresos ,
2001 ; COMPARATIVE INVESTIGATION OF SURFACE STRUCTURE, PHOTOLUMINESCENCE AND
ITS EXCITATION IN SILICON WIRES, T.V.TORCHYNSKA, J.PALACIOS GOMEZ, G.P.POLUPAN,
F.G.BECERRIL ESPINOZA, ISSN 0368-2048, JOURNAL OF ELECTRONIC SPECTROSCOPY AND
RELATED PHE, Vol.7, Pag.235-241, Revistas Arbitradas ,
2001 ; CELDAS SOLARES BASADAS EN ESTRUCTURAS DE ALAMBRE DE SI,, T.V.Torchynska, A.Vivas
Hernandez,, De 6-sexto Congreso Nacional de Ingeniria Electromecanica y de Sistemas, Mexico,, Vol.3,
Pag.964-966, Memorias de congresos ,
2001 ; APPLICATION OF III-V MATERIALS IN SPACE SOLAR CELL ENGINEERING,,
T.TORCHYNSKA, MODERN PHYSICS LETTER, Vol.4, Pag.593-596, Revistas Arbitradas ,
2001 ; INVESTIGACION DE LOS INAS PUNTOS CUANTICOS INSERTADOS DENTRO DE
ESTRUCTURAS LASER DE INGAAS/GAAS PARA FIBRA OPTICA, T.V.Torchynska, J.L.Casas
Espinola, E.Velazquez Lozada,, 6-sexto Congreso Nacional de Ingeniria Electromecanica y de Sistemas,
Mexico,, Vol.3, Pag.967-969, Memorias de congresos ,
2001 ; THE ROLE OF OXIDATION ON POROUS SILICON PHOTOLUMINESCENCE AND ITS
EXCITATION, T.V.TORCHYNSKA, N.E.KORSUNSKAYA, L.YU.KHOMENKOVA, B.R.DZHUMAEV,
S.M.PROKES,, THIN SOLID FILMS, ISSN 0040-6090, Vol.6, Pag.88-93, Revistas Arbitradas ,
2000 ; NATURE OF RED PHOTOLUMINESCENCE IN POROUS SILICON,, T.V.Torchynska, 3-rd
International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM¿2000,
Smolenice Castle, Slovakia,, Vol.4, Pag.305-308, Memorias de congresos ,
2000 ; PECULIARITIES OF RAMAN SPECTRA FROM POROUS SILICON,, T.V.Torchynska,
L.I.Khomenkova, N.E.Korsunskaya,, Conference on Advanced Semiconductor Devices and Microsystems,
ASDAM¿2000, Smolenice Castle, Slovakia, Vol.3, Pag.63-66, Memorias de congresos ,
2000 ; TEMPERATURE EFFECT ON PHOTOLUMINESCENCE EXCITATION PROCESS OF POROUS
SILICON,, T.V.Torchynska,L.I.Khomenkova, N.E.Korsunskaya, B.R.Dzumaev, B.M.Bulakh, Y.Goldstein,
A.Many, E.Savir, ISSN 1742-6588, Proc. International Semiconductor Conf., CAS¿2000, Romania, 2000,
Vol.3, Pag.55-58, Memorias de congresos ,
2000 ; PERSPECTIVE OF III-V MATERIAL SOLAR CELL APPLICATION IN SPACE SOLAR
ENERGETICS, T. Torchynska, J. Palacios, G. Polupan, A. Kabatskaya, Proceeding of SPIE,, Vol.3975,
Pag.113-115, Memorias de congresos ,
2000 ; ELECTRO- AND PHOTO LUMINESCENCE SPECTRA IN GAP N LED AT THE CREATION
DISLOCATION, T, Torchynska, A,Kabatskaya, N. Korsunskaya, V. Kooshnirenko ISBN: 9780819436016,
Proceeding SPIE, Vol.3975, Pag.123-127, Memorias de congresos ,
2000 ; OPTICAL AND STRUCTURAL STUDY OF SILICON LOW DIMENSIONAL SYSTEMS, T.
Torchynska, Becerril Espinoza, A.Many, Y. Goldstein, 25th International Conference on Physics of
Semiconductors, Osaca, Japan, Vol. , Pag.213-215, Memorias de congresos ,
2000 ; COMPLEX NATURE OF RED PHOTOLUMINESCENCE BAND AND PECULIARITIES OF IT[S
EXCITATION IN POROUS SILICON, T.V.TORCHYNSKA, J.Palacios Gomez, F.G.Becerril Espinoza,
N.E.Korsunskaya, L.Yu. Khomenkova,, APPL.SURFACE SCIENCE, ISSN 0169-4332, Vol.7, Pag.197-204,
Revistas Arbitradas ,
2000 ; SUB OXIDE RELATED CENTER AS THE SOURCE OF THE INTENSE RED LUMINESCENCE OF
POROUS SI, T.V.TORCHYNSKA, N.E.Korsunskaya, L.Yu.Khomenkova, B.R.Dzhumaev, S.M.Prokes,,
MICROELECTRONICS AND ENGINERING, Vol.9, Pag.485-493, Revistas Arbitradas ,
2000 ; THREE APPROCHES TO SURFACE SABSTANCE ROLE INVESTIGATION IN POROUS
SILICON PHOTOLUMINESCENCE AND ITS EXCITATION, T.V.TORCHYNSKA,
N.E.KORSUNSKA, L.KHIMENKOVA, B.DZUMAEV, J.PHYS.CHEM.SOLIDS, ISSN: 0022-3697, Vol.5,
Pag.937-941, Revistas Arbitradas ,
2000 ; ESFUERZOS ELACTICOS EN LAS ESTRUCTURAS DE SEMICONDUCTORS MULTICAPAS,,
T.V.Torchynska, F.Conde Zelocuatecatl, G.P.Polupan, 5 Quinto Congreso Naciocal de Ingenieria
Electromechanica y de sistemas,, Vol.3, Pag.77-79, Memorias de congresos ,
2000 ; DESARROLLO DE CELDAS SOLARES PARA SATELITES DE TELECOMUNICACIONES
ESPACIALES,, A.Vivas Hernández, G.P.Polupan, T.V.Torchynska, 5 Quinto Congreso Naciocal de
Ingenieria Electromechanica y de sistemas, Vol.3, Pag.91-93, Memorias de congresos ,
1999 ; ROLE OF SURFACE SUBSTANCES IN EXCITATION OF POROUS SILICON, L. Khomenkova, B.
Dzumaev, T. Torchynska, N. Korsunska, Y. Goldstein, Proceeding SPIE, Vol.3725, Pag.111-115, Memorias
de congresos ,
1999 ; ¿THE NATURE OF PHOTOLUMINESCENCE EXCITATION BANDS IN POROUS SILICON¿,,
.V.Torchynska, L.I.Khomenkova, N.E.Korsunskaya ISBN: 0-7803-5139-8, International Semiconductor
Conf., CAS¿99, Romania, Vol.3, Pag.109-112, Memorias de congresos ,
1999 ; ¿INFLUENCE OF DISLOCATION ON EXCITONIC AND DA LUMINESCENCE SPECTRA IN GAP
EPITAXIAL LAYERS¿,, T.V.Torchynska, N.E.Korsunskaya, B.I. Kooshnirenko, ISBN: 0-7803-5139-8,
International Semiconductor Conf., CAS¿99, October, Sinai, Romania, Vol.3, Pag.53-56, Memorias de
congresos ,
1999 ; ¿PERSPECTIVA DE APLICACION DE LOS MATERIALES DE SILICIO Y ELEMENTOS III-V
GRUPO EN LAS CELDAS SOLARES TERRESTRE Y ESPACIAL¿,, T.V.Torchynska, 2-Congreso
Internacional de Ingenieria Electromechanica y de sistemas,, Vol.4, Pag.52-56, Memorias de congresos ,
1999 ; OH RELATED EMITTING CENTERS IN INTERFACE LAYER OF POROUS SILICON,,
T.V.TORCHYNSKA, L.I.KHOMENKOVA, N.E.KORSUNSKA, M.K.SHEINKMAN, J.PHYSICS B,
Condensed Matter, ISSN 0921-4526., Vol.4, Pag.955-958, Revistas Arbitradas ,
1999 ; INVESTIGATION OF AGEING PROCESS IN POROUS SILICON, N.P.Baran, N.E.Korsunskaya,
L.Yu.Khomenkova,B.R.Dzhumaev, T.V.Torchinskaya, B.M.Bulakh, G.Polisskii,, UKR. FIZ. ZH.
(UKRAINE J.OF PHYSICS) ISSN: 0960-6068, Vol.5, Pag.394-398, Revistas Arbitradas ,
1999 ; ROLE OF SURFACE SUBSTANCES IN EXCITATION OF POROUS SILICON
PHOTOLUMINESCENCE, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA, L.YU.KHOMENKOVA,
B.R.DZHUMAEV, OPTOELECTRONICS.REVIEW, ISSN 1230-3402, Vol.5, Pag.135-138, Revistas
Arbitradas ,
1999 ; MECHANISM OF INJECTION ENHANCED DEFECT TRANSFORMATION IN LPE CAAS
STRUCTURES,, T.V.TORCHYNSKA, G. Polupan, E. Shcherbyna, V. Kooshnirenko, PHYSICS B,
Condensed Matter,ISSN 0921-4526., Vol.8, Pag.1038-1046, Revistas Arbitradas ,
1999 ; SI AND GAAS APPLICATION COMPARISON FOR SPACE AND TERRESTRIAL SOLAR CELLS,
T.V.TORCHINSKAYA,, CIENTIFICA, Vol.11, Pag.35-45, Revistas Arbitradas ,
1998 ; MECHANISM OF III-V LED DEGRADATION, T. Torchynska, Proceeding of SPIE, Vol.3316, Pag.200-
202, Memorias de congresos ,
1998 ; ¿ OXIDATION PROCESS EFFECTS ON POROUS SILICON PHOTOLUMINESCENCE¿,,
T.V.Torchinskaya, N.E.Korsunskaya,L. Khomenkova, Y. Golstein ISBN: 0-7803-4432-4, Intern.
Semiconductor Conf., CAS¿98, Romania,, Vol.3, Pag.131-137, Memorias de congresos ,
1998 ; TWO WAYS OF POROUS SI PHOTOLUMINESCENCE EXCITATION, T.V.TORCHINSKAYA,
N.E.KORSUNSKAYA,L.YU. KHOMENKOVA,, MATERIALS SCIENCE ENGINEERING, ISSN: 0921-
5093, Vol.4, Pag.162-165, Revistas Arbitradas ,
1998 ; CURRENT STATUS OF SPACE AND TERRESTRIAL SOLAR ENERGETICS,
T.V.TORCHINSKAYA, OPTOELECTRONICS. REVIEW, ISSN: 1230-3402, Vol.10, Pag.121-130,
Revistas Arbitradas ,
1998 ; EFFECT OF THE DESORPTION PROCESS ON PHOTOLUMINESCENCE EXCITATION
SPECTRA OF POROUS SILICON, T.V.TORCHINSKAYA,N.E.Korsunskaya, L.Yu.Khomenkova,
B.R.Dzhumaev, Y.Goldstein, E.Savir, ISSN 1605-6582, SEMICONDUCTOR PHYSICS, QUANTUM
ELECTRONICS OPT, Vol.5, Pag.61-65, Revistas Arbitradas ,
1997 ; ¿COMPLEX STUDIES OF POROUS SILICON AGING PHENOMENA¿,,
T.V.Torchinskaya,N.E.Korsunskaya, L.Yu. Khomenkova, M.K.Sheinkman, A. Misiuk, ISBN: 0-7803-4032-8,
International Semiconductor Conf., CAS, 97, Sinai, Romania, Vol.3, Pag.215-217, Memorias de
congresos ,
1997 ; VARIATIONS OF IV CURVES OF SILICON IMPATT DIODES STIMULATED BY G RADIATION,
R.V.KONAKOVA, M.B.TAGAEV, T.V.TORCHINSKAYA, L.V.SHCHERBIna, FUNCTIONAL
MATERIALS, ISSN 1027-5495, Vol.4, Pag.568-571, Revistas Arbitradas ,
1997 ; TWO SOURCES OF EXCITATION OF PHOTOLUMINESCENCE OF POROUS SILICON,
T.V.TORCHINSKAYA,N.E.Korsunskaya, L.Yu. Khomenkova, B.Dzumaev, B.M.Bulakh,,
SEMICONDUCTORS, ISSN 1063-7826, Vol.4, Pag.773-776, Revistas Arbitradas ,
1997 ; PHOTOLUMINESCENCE AND EPR STUDIES OF POROUS SILICON, T.V.TORCHINSKAYA,
N.E.Korsunskaya, L.Yu. Khomenkova, B.Dzumaev, M.K.Sheinkman, N.P.Baran, J.OF LUMINESCEN,
ISSN 0022-2313, Vol.3, Pag.400-402, Revistas Arbitradas ,
1996 ; ¿EXCITATION MECHANISM OF POROUS SI PHOTOLUMINESCENCE¿,, T.V.Torchinskaya,
Advanced Semiconductor Devices and Microsystems-ASDAM 96¿, Smolenice, Slovakia,, Vol.4, Pag.121-
125, Memorias de congresos ,
1996 ; DEPENDENCE OF THE PHOTOLUMINESCENCE OF POROUS SILICON ON THE SURFACE
COMPOSITION OF THE SILICON FILMS, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA,
B.DZUMAEV,O.D.Smiyan, A.L.Kapitanchuk, S.O.Antonov,, SEMICONDUCTORS, ISSN 1063-7826,
Vol.5, Pag.792-796, Revistas Arbitradas ,
1996 ; ¿ ELECTRICAL AND OPTICAL PROPERTIES OF NON-UNIFORM SEMICONDUCTING
SYNTHETIC DIAMOND WITH DEEP IMPURITY LEVELS¿,, Yu. Vorobiev, T.V.Torchinskaya, IEEE
Semi-Insulat. Material Conference SIMC - 9, France, Vol.3, Pag.31-34, Memorias de congresos ,
1996 ; ¿OPTICAL AND FIELD MEMORY EFFECTS IN SEMICONDUCTING DIAMOND¿,,
T.V.Torchinskaya, Y.V.Vorobiev, R.V.Zakharchenko,, Advanced Semiconductor Devices and
Microsystems-ASDAM 96¿, Slovakia,, Vol.4, Pag.29-32, Memorias de congresos ,
1995 ; . "SIOX RELATED PHOTOLUMINESCENCE EXCITATION IN POROUS SILICON",,
T.V.Torchinskaya, N.E.Korsunskaya, B.Dzumaev ISBN: 1-55899-731-8, 1995 MRS Fall Meeting, USA,
ISBN: 1-55899-731-8, Vol. , Pag.17-22, Memorias de congresos ,
1995 ; DEEP CENTERS IN INXGA1XASINP PHOTODIODES FABRICATED BY THE METALORGANIC
CHEMICAL VAPOR DEPOSITION, T.V.TORCHINSKAYA, V.I.KOOSHNIRENKO,
L.V.SHCHERBINA, C.J.MINER, SEMICONDUCTORS, ISBN: 1-55899-731-8, Vol.3, Pag.692-694,
Revistas Arbitradas ,
1995 ; AGING OF PHOTOLUMINESCENCE AND EXCITATION SPECTRA OF POROUS SILICON,
T.V.TORCHINSKAYA, N. Korsunskaya, B. Dzumaev, SPIE,OPTICAL SCIENCE, ENGINEERING AND
INSTRU, Vol.6, Pag.265-271, Revistas Arbitradas ,
1994 ; TRANSFORMATION OF EXCITONIC SPECTRA OF GAP N LED STRUCTURES, T, Torchynska,
Proc. Inter, Conf. Electronic Materials, ICEM 94, Taiwane, Vol. , Pag.97-100, Memorias de congresos ,
1994 ; CHARACTERIZATION OF DEEP LEVEL DEFECTS IN MOCVD INGAAS LAYERS, T. Torchynska,
8th Conference on Semi insulation III-V Materials, Vol. , Pag.113-116, Memorias de congresos ,
1994 ; DEEP CENTERS DUE TO GE ATOMS IN ALGAASBASED DOUBLE HETEROSTRUCTURES,
T.V.TORCHINSKAYA, V.I.GNATENKO, SEMICONDUCTORS, ISSN 1063-7826, Vol.4, Pag.735-738,
Revistas Arbitradas ,
1994 ; CARACTERIZATION OFDEEP LEVELDEFECTSAND THEIR CONNECTION WITH THE
PERFOMANCE OF INXGA1XASINP PINPHOTODIOD, T.V.TORCHINSKAYA, V. Kooshnirenko,,
SPIE, . MICROELECTRONIC AND MANUFACTURING (USA), Vol.4, Pag.233-236, Revistas
Arbitradas ,
1994 ; THE CAUSES OF EMITTINGPOWER INSTABILITY IN GAPN LEDS, T.V.TORCHINSKAYA,
T.G.BERDINSKIKH, O.D.SMIYAN ISSN: 0026-2714, MICROELECTRONICS AND RELIABILITY
(UK), Vol.5, Pag.135-139, Revistas Arbitradas ,
1994 ; DEEP DEFECTS AND FIELD DEPENDENCE OF THEIR PARAMETERS IN INGAAS LAYERS, T.
Torchynska, V. Kooshnirenko, Proceeding ICEM 94, Taiwane, Vol. , Pag.153-156, Memorias de congresos
,
1993 ; INJECTIONENHANCED DEFECT REACTIONS IN IIIV LIGHT EMITTING DIODES,,
T.V.TORCHINSKAYA, A. Rybak Annual IEEE International Reliability Physics Is., (EEUU), 1994, v.32,
pp.454-457. ISBN 0780358600, IEEE INTERNATIONAL RELIABILITY PHYSICS (USA), Vol.4,
Pag.454-457, Revistas Arbitradas ,
1993 ; KINETICS OF RED ALGAAS LIGHTEMITTING DIODES DEGRADATION, T.V.TORCHINSKA
ISSN: 0026-2714, MICROELECTRONICS AND RELIABILITY, Vol.4, Pag.845-857, Revistas
Arbitradas ,
1992 ; THE EFFECT OF AN AVALANCHE BREAKDOWN INFLUENCE ON MINORITY CARRIERS
LIFETIME IN LIGHT EMITTING DIODES,, T.V.Torchynska, Intern. Conf. Microelectronics and
computer science, Kishinev, Moldova, Vol.3, Pag.91-93, Memorias de congresos ,
1992 ; TRANSFORMATION OF EXCITONIC AND DALUMINESCENCE SPECTRA OF GAPN
LIGHTEMITTINGSTRUCTURES IN THE INTRODUCTION OF DISLOCATION,,
T.V.TORCHINSKAYA, N.E.KORSUNSKAYA, M.K.SHEINKMAN ISSN 0268-1242,
SEMICONDUCTOR SCIENCES AND TECHNOLOGY (UK), Vol.6, Pag.385-390, Revistas Arbitradas ,
1992 ; NATURE OF THE INSTABILITY OF THE LUMINESCENCE EMITTED BY GAPN STRUCTURES,
T.V.TORCHINSKAYA, T.G.BERDINSKIKH, O.D.SMIYAN, ISSN 0038-5700 Después 1991
Semiconductors ISSN 1063-7826, SOV. PHYS.SEMICONDUCTORS,ISSN 0038-5700, Vol.5, Pag.256-
260, Revistas Arbitradas ,
1992 ; INJECTIONENHANCED TRANSFORMATION OF LUMINESCENCE SPECTRA OF GREEN
GAPN LIGHT EMITTING DIOD, T.V.TORCHINSKA, J. OF ELECTRONIC MATERIALS, ISSN
0361-5235 (USA), Vol.6, Pag.423-429, Revistas Arbitradas ,
1991 ; KINETICS OF THE RED ALGAAS LEDS DEGRADATION, T.V.TORCHINSKAYA,
V.A.VOROTINSKIY, ZH.S.ABDULAEV AND M.K.SHEINKMAN ISSN 0038-5662 Despues 1991 Tech.
Phys. ISSN 1063-7842, (SOV.PHYS.) TECHNIC. PHYSICS, ISSN 0038-5662, Vol.4, Pag.180-183,
Revistas Arbitradas ,
1991 ; RED ALGAAS LIGHT EMITTING DIODE DEGRADATION KINETICS, T.V.TORCHINSKAYA, ZH.
TEKHN. FIZ., ISSN 1063-7842, Vol.6, Pag.98-103, Revistas Arbitradas ,
1991 ; DEGRADATION OF THE POLICRYSTAL PHOTORESISTORS BASED ON CDS CU CL THIN
FILMS, T.V.TORCHINSKAYA, I. Gorodetskiy ISSN 1605-6582, OPTOELECTRONICS AND
SEMICONDUCTOR TECHNICS (OPT, U, Vol.5, Pag.76-81, Revistas Arbitradas ,
1990 ; ¿RECOMBINATION-ENHANCED DEFECT REACTION IN III-V LIGHT EMITTING
STRUCTURES¿,, T.V. Torchynskaya,, XII USSR Conference ¿Physics of Semiconductors¿, Kiev, USSR,,
Vol.3, Pag.29-31, Memorias de congresos ,
1990 ; ¿DEFECT CONTROL PROCESSES IN SEMICONDUCTORS ALGAAS HETEROSTRUCTURES¿,,
T.V. Torchynskaya,, XII USSR Conference ¿Physics of Semiconductors¿, Kiev, USSR,, Vol.3, Pag.75-78,
Memorias de congresos ,
1990 ; INJECTIONED STIMULATED TRANSFORMATIONOFTHE GREEN LUMINESCENCE SPECTRA
OF GAPN LED, T.V.TORCHINSKAYA, A.G.KARABOEV,M.K.SHEINKMAN, ISSN 0038-5700 Después
1991 Semiconductors ISSN 1063-7826, SOV.PHYS. SEMICONDUCTORS, ISSN 0038-5700, Vol.7,
Pag.841-847, Revistas Arbitradas ,
1990 ; IV CHARACTERISTIC TRANSFORMATION DURING GRADUAL ALGAAS LED
DEGRADATION, T.V.TORCHINSKAYA, QUANTUM ELECTRONICS, ISSN 1560-8034, Vol.6,
Pag.88-93, Revistas Arbitradas ,
1990 ; GAP PHOTOLUMINESCENCE SPECTRA TRANSFORMATIONON THE INTRODUCTION OF
THE DISLOCATION, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA, M.K.SHEINKMAN, APPLIED.
SPECTROSCOPY J., ISSN 0021-9037, Vol.6, Pag.1161-1166, Revistas Arbitradas ,
1990 ; EXCITONIC AND DONORACCEPTOR LUMINESCENCE SPECTRA TRANSFORMATION IN
GAP LIGHT EMITTING STRUCTURES WITH APPEARING OF DISLOCATION,
T.V.TORCHINSKAYA ISSN 0021-9037, ZH. PRIKLADN. SPECTROS. (ZHPS, RUSSIA), Vol.7,
Pag.761-767, Revistas Arbitradas ,
1989 ; JOINT MECHANISM OF THE DEFECT TRANSFORMATION IN LIGHT-EMITTING DIODES
UNDER DEGRADATION, RADIATION AND ULTRASOUND TREATMEN,, T.V. Torchynskaya,
International Conference ¿Physical problems of the optoelectronics¿, ¿OPTOELECTRONICS¿89¿,
Baku, USSR, Vol.2, Pag.128-129, Memorias de congresos ,
1989 ; GENERAL DEFECT TRANSFORMATION PROCESSES IN LIGHT-EMITTING DIODES UNDER
DEGRADATION, RADIATION AND ULTRASOUND TREATMENT., T.V. Torchynskaya, Reliability
forecast, Ukraine Conference¿Physical methods of the forecast in the quality control and reliability
tasks, Chernigov, September, Uk, Vol.3, Pag.150-152, Memorias de congresos ,
1989 ; FACTORS INFLUENCE ON GREEN GAP N LED DEGRADATION, T.V.Torchinskaya,
T.G.Berdinskikh, A.G.Karabaev, O.D.Smiyan, A.A.Trofimov, V.A.Denisyuk, B.I.Vishnevskaya, L.M.Kogan,
TEKHN. FIZIK ZH., ISSN 1063-7842, Vol.5, Pag.134-138, Revistas Arbitradas ,
1989 ; REASONS OF DEGRADATION OF RED ALGAAS GAAS HETEROSTRUCTURE
ELECTROLUMINESCENCE, T.V.TORCHINSKAYA and Zh.S.Abdulaev ISSN 1063-7842, TEKHN.
FIZIK. ZH, ISSN 1063-7842, Vol.4, Pag.175-178, Revistas Arbitradas ,
1989 ; CAUSES OF THE DEGRADATION OF ELECTROLUMINESCENCE IN RED ALGAAS
HETEROSTRUCTURES, T.V.TORCHINSKAYA , ZH.S.ABDULAEV ISSN 0038-5662 Despues 1991
Tech. Phys. ISSN 1063-7842, (SOV.PHYS.) TECHNIC. PHYSICS, ISSN 0038-5662, Vol.3, Pag.817-819,
Revistas Arbitradas ,
1989 ; SOME REASONS OF FAST ALGAASGAAS INJECTION LASER DEGRADATION,
T.V.TORCHINSKAYA, QUANTUM ELECTRONICS, ISSN 1560-8034, Vol.6, Pag.24-30, Revistas
Arbitradas ,
1989 ; DEFECT TRANSFORMATION IN GAAS SI LEDS IN NONEQULIBRIUM CONDITION,
T.V.TORCHINSKAYA, G. Semenova ISSN: 0960-6068, UKR. FIZ. ZH. (UKRAINE J.OF PHYSICS)
ISSN: 0960-6068, Vol.6, Pag.1079-1084, Revistas Arbitradas ,
1989 ; DEGRADATION OF GREEN GAP LEDS AND FACTORS AFFECTING IT, T.V.TORCHINSKAYA,
T.G.BERDINSKIKH, A.G.KARABAEV, O.D.SMIYAN, A.A.TROFIMOV, V.A.DENISYUK,
B.I.VISHNEVSKAYA, L.M.KOGAN ISSN 0038-5662 Despues 1991 Tech. Phys. ISSN 1063-7842,
SOV.PHYS. TECHNIC. PHYSICS, ISSN 0038-5662, Vol.4, Pag.1036-1039, Revistas Arbitradas ,
1989 ; INJECTION ENHANCED DEFECT REACTIONS IN GAAS SI LEDS, T.V.TORCHINSKAYA,
QUANTUM ELECTRONICS, ISSN 1560-8034, Vol. , Pag.53-57, Revistas Arbitradas ,
1989 ; KINETICS OF THE INJECTION STIMULATED TRANSFORMATION OF THE DEFECTS IN
LIGHTEMITTING GAASSI STRUCTURES, T.V.TORCHINSKAYA, B.I.LEV, P.M.TOMCHUK AND
M.K.SHEINKMAN ISSN 0038-5700 Después 1991 Semiconductors ISSN 1063-7826, SOV.PHYS.
SEMICONDUCTORS, ISSN 0038-5700, Vol.6, Pag.949-954, Revistas Arbitradas ,
1989 ; DEEP CENTERS PARAMETERSIN ALGAAS LEDS ESTIMATED BY CAPACITANCE AND
INJECTION SPECTROSCOPE METHODS, M.Yu.Gusev, A.N.Zyuganov and T.V.Torchinskaya,
Zh.S.Abdulaev ISSN: 0960-6068, UKR. FIZ. ZH. (UKRAINE J. OF PHYSICS), Vol.7, Pag.1220-1226,
Revistas Arbitradas ,
1988 ; DEEP CENTER TRANSFORMATION IN REDLEDS BASED ONALGAAS GAAS
HETEROSTRUCTUR, T.V.TORCHINSKAYA ISSN: 0960-6068, UKR. FIZ. ZH. ( UKRAINE J.OF
PHYSICS)ISSN: 0960-6068, Vol.5, Pag.1696-1702, Revistas Arbitradas ,
1988 ; SOME CAUSES OF THE INSTABILITY OF THE EMISSION FROM GAP N LIGHTEMITTING
DIODES, T.V.Torchinskaya, A.G.Karaboev, A.A.Shmatov, Zh.S. Abdulaev, M.K.Sheinkman ISSN: 0360-
120X Despues 1991 Tech. Phys. Lett. ISSN 1063-7850, SOV. TECH.PHYS.LETT, ISSN: 0360-120X,
Vol.3, Pag.744-746, Revistas Arbitradas ,
1988 ; RECOMBINATIONENHANCED TRANSFORMATION OF DEEP CENTERS IN RED
LIGHTEMITTING ALGAAS DIODES, T.V.TORCHINSKAYA, A.A.SHMATOV AND
M.K.SHEINKMAN, PHYS. STAT. SOL. (A), ISSN 1862-6300, Vol.5, Pag.213-217, Revistas Arbitradas ,
1988 ; REASONES OF THE EMISSION INSTABILITY OF GAPN LEDS, T.V.TORCHINSKAYA,
A.G.KARABOEV, A.A.SHMATOV, PISMA. IN ZH.TEKHN. FIZIK., ISSN 1063-7850, Vol.7, Pag.1710-
1716, Revistas Arbitradas ,
1987 ; CONNECTION OF THE GAP N, ZN O DEGRADATION KINETICS WITH THE RED
LUMINESCENCE BAND INTENSITY, T.V. TORCHINSKAYA, PISMA IN TEKHN. FIZIK. ZH.,
ISSN 1063-7850, Vol.7, Pag.1221-1227, Revistas Arbitradas ,
1987 ; GREEN AND YELLOW GAP LEDS DEGRADATION. I I AND III STAGES, T.V.TORCHINSKAYA,
ELECTRONIC TECHNICS, Vol.7, Pag.67-73, Revistas Arbitradas ,
1987 ; ¿ELEMENTARY MECHANISMS OF THE PHOTOFATIGUE, AGING AND DEGRADATION
PROCESSES IN II-VI PHOTORESISTORS,, T.V.Torchynska,, 5-th USSR Conference ¿Physics and
Technical application of II-VI semiconductors¿, Vilnius, Vol.4, Pag.126-130, Memorias de congresos ,
1987 ; RELATIONSHIP BETWEEN THE DEGRADATION KINETICS OF GAP N, ZN O
LIGHTEMITTING DIODES AND THE INTENSITY OF THE RED EMISSION BAND, T.V.
TORCHINSKAYA AND M.K.SHEINKMAN ISSN: 0360-120X Despues 1991 Tech. Phys. Lett. ISSN 1063-
7850, SOV.TECHNIC.PHYSICS LETT, ISSN: 0360-120X, Vol.3, Pag.511-513, Revistas Arbitradas ,
1987 ; GREEN AND YELOW GAP LEDS DEGRADATION. I STAGE, T.V.TORCHINSKAYA, I. Puzin,
ELECTRONIC TECHNIQue, Vol.5, Pag.58-67, Revistas Arbitradas ,
1986 ; CONNECTION OF THE DEGRADATION PROCESS OF INGAAS>SI LED WITH THE
TRANSFORMATION OF STRUCTURAL DEFECTS,, T.V.Torchynska, 2-th USSR Conference
¿Physical base of Reliability and degradation of semiconductor devices¿, Kishinev,, Vol.4, Pag.58-62,
Memorias de congresos ,
1986 ; CHANGES IN THE ELECTRICAL AND LUMINESCENCE CHARACTERISTICS OF INGAASSI
LIGHTEMITTING DIODES INDUCED BY ULTRASOUNDS, A.P.Zdebskii, T.V.Torchinskaya,
V.L.Korchnaya and M.K.Sheinkman,, PISMA IN TEKHN, FIZ. ZH. ,ISSN 1063-7850, Vol.6, Pag.76-81,
Revistas Arbitradas ,
1986 ; CHANGES OF THE SPECTRAL CHARACTERISTICS OF THE INGAASSI LEDS STIMULATED
BY RADIATION, T.V.TORCHINSKAYA, ZH. PRIKL. SPECTROSCOP., Vol.5, Pag.252-256, Revistas
Arbitradas ,
1986 ; INFLUENCE OF IRRADIATION WITH SUBTHRESHOLD ELECTRONS ON THE SPECTRAL
CHARACTERISTICS OFINXGA1XASSI LIGHTEMITTING DIODES AND ON THE STRUCTURE
DEFECTS IN THE DIODES, G.N.Semenova, E.Yu.Brailovskiy, T.V.Torchinskaya and T.G.Berdinskich,
Yu.A.Tkhoric, M.K.Sheinkman ISSN 0038-5700 Después 1991 Semiconductors ISSN 1063-7826,
SOV.PHYS. SEMICONDUCTORS, ISSN 0038-5700, Vol.3, Pag.245-248, Revistas Arbitradas ,
1986 ; ULTRASONICALLY INDUCED CHANGES IN THE ELECTRICAL AND LUMINESCENCE
CHARACTERISTICS IN INGAASSI LIGHTEMITTING DIODES, A.P.ZDEBSKII,
T.V.TORCHINSKAYA, V.L.KORCHNAYA ANDM.K.SHEINKMAN, ISSN: 0360-120X Despues 1991
Tech. Phys. Lett. ISSN 1063-7850, SOV. TECHN. PHYS. LETT, ISSN: 0360-120X, Vol.3, Pag.31-33,
Revistas Arbitradas ,
1986 ; PROCESSES IN THE CU2 SCDS HETEROSTRUCTURES UNDER PHOTOSTIMULATION,
T.V.TORCHINSKAYA M Mirzazhanov, ZH. PRIKL. SPECTROSCOP., ISSN 0021-9037, Vol.5, Pag.991-
995, Revistas Arbitradas ,
1986 ; RADIATION STIMULATED VARIATIONS OF THE SPECTRAL CHARACTERISTIC IN THE
INGAASSI LEDS, T.V.Torchinskaya G.N.Semenova, E.Yu.Brailovskiy, and T.G.Berdinskich, APPLIED
SPECTROSCOPY J, ISSN 0021-9037, Vol.3, Pag.255-257, Revistas Arbitradas ,
1986 ; TRANSFORMATION OFDEEP CENTERS DURING DEGRADATION OFGAPN,ZNO
LIGHTEMITTING DIODES, T.V.TORCHINSKAYA, A.A.SHMATOV , V.I.STRICHKOV AND
M.K.SHEINKMAN, ISSN 0038-5700 Después 1991 Semiconductors ISSN 1063-7826, SOV.
PHYS.SEMICONDUCTORS, ISSN 0038-5700, Vol.5, Pag.442-446, Revistas Arbitradas ,
1986 ; PHOTOSTIMULATED PROCESSES IN THE CU2 SCDS HETEROSTRUCTURES,
T.V.TORCHINSKAYAANDM.A.MURZAZHANOV,, APPLIED SPECTROSCOPY J., ISSN 0021-9037,
Vol.7, Pag.991-997, Revistas Arbitradas ,
1985 ; EFFECT OF LOW DOSE AND DEGRADATION KINETICS OF INXGA1XASSI LIGHTEMITTING
DIODES, T.V.TORCHINSKAYA, PISMA TEKHN. FIZIK. ZH., ISSN 1063-7850, Vol.3, Pag.1114-1116,
Revistas Arbitradas ,
1985 ; REASONE OF THE DEGRADATION OF CERAMIC SOLAR CELLS OF CUS CDS TYPES,
T.V.Torchinskaya, M.A.Mirzazhanov and A.I.Marchenko,, Applied Solar Energy (English translation of
Geliotekhnika), ISSN: 0003-701X, Vol.4, Pag.16-20, Revistas Arbitradas ,
1985 ; INVESTIGATION OF THE PHOTOFATIGUE PROCESS IN THE CUS-CDS SOLAR CELLS,,
T.V.Torchynska,, V-th USSR Conference ¿Physics and Technical application of the II-VI
semiconductors¿, Vilnus, Litva, Vol.3, Pag.173-175, Revistas Arbitradas ,
1985 ; SMALL DOSE EFFECT AND DEGRADATION RESISTANCEOF INXGA1XASSI
LIGHTEMITTING DIODES, T.V.TORCHINSKAYA, G.N.SEMENOVA AND T.G.BERDINSKIKH
ISSN: 0360-120X Despues 1991 Tech. Phys. Lett. ISSN 1063-7850, SOV. TECHN. PHYS. LETT, ISSN:
0360-120X, Vol.3, Pag.462-463, Revistas Arbitradas ,
1985 ; STABILIZATION OF CDS CU CL PHOTORESISTOR PARAMETERS AT LOW TEMPERATURE
PHOTOTREATMENT, T.V.TORCHINSKAYA, ELECTRONIC TECHNIQ., Vol.4, Pag.38-41, Revistas
Arbitradas ,
1984 ; Connection of the solid solution decay with aging and degradation processes for devices based on II-VI
thin films, Proc. All Union Conference ¿Physics of the thin films¿, Ivano-Frankovsk, 1984, p.341,
Ukraine., T.V.Torchynska, All Union Conference ¿Physics of the thin films¿, Ivano-Frankovsk, ,
Ukraine., Vol. , Pag.341-345, Memorias de congresos ,
1984 ; ANALYSIS OF ELEMENTARY DEGRADATION MECHANISMS OF THE CU2 S CDS SOLAR
CELLS, T.V.TORCHINSKAYA AND M.A.MIRZAZHANOV,, EXPERIMENTELLE TECHNIK
DER.PHYSIK, Vol.6, Pag.175-180, Revistas Arbitradas ,
1984 ; EXCESS CURRENTS AND STRUCTURE DEFECTS IN INGAASSI LIGHTEMITTING DIODES,
T.V.TORCHINSKAYA, G.N.SEMENOVA, E.YU BRAILOVSKII, L.A.MATVEEVA,
M.A.MIRZAZHANOV, T.G.BERDINSKIKH, I.B.PUZIN, N.ARIAS ISSN 0038-5700 Después 1991
Semiconductors ISSN 1063-7826, SOV.PHYS. SEMICONDUCTORS, ISSN 0038-5700, Vol.4, Pag.875-
878, Revistas Arbitradas ,
1984 ; INVESTIGATION OF ELEMENTARY DEGRADATION MECHANISMS INCU2SCDS
HETEROCONVECTORS, T.V.TORCHINSKAYA,, Applied Solar Energy (English translation of
Geliotekhnika , ISSN: 0003-701X, Vol.4, Pag.12-15, Revistas Arbitradas ,
1984 ; INVESTIGATION OF THE AGING OF SOLAR CELLS OF CU2SCDS TYPES, T.V.Torchinskaya,
M.A.Mirzazhanov and A.I.Marchenko,, Applied Solar Energy (English translation of Geliotekhnika,
ISSN: 0003-701X, Vol.4, Pag.6-11, Revistas Arbitradas ,
1984 ; UV LIGHT ENHANCED DEFECT DIFFUSION IN CDS, T.V.TORCHINSKAYA and A.A.Anaev, UKR.
FIZ. ZH. ( UKRAINE J.OF PHYSICS) ISSN: 0960-6068, Vol.4, Pag.851-854, Revistas Arbitradas ,
1984 ; RESEARCH OF THE REVERSE DEGRADATION IN CU2 SCDS HETEROJUNCTIONS,
T.V.TORCHINSKAYA, A.I.MARCHENKO AND M.A.MIRZAZHANOV, G.I.SHEREMETOVA,
APPLIED SPECTROSCOPY J, ISSN 0021-9037, Vol.5, Pag.1174-1178, Revistas Arbitradas ,
1984 ; RESEARCH OF THE SINKS NATURE FOR THE EXCESS ATOMS IN POLYCRYSTAL CDSCUCL
FILMS, T.V.TORCHINSKAYA and L.N.Baidokha, INORGANIC MATERIALS,ISSN: 0020-1685, Vol.3,
Pag.1748-1750, Revistas Arbitradas ,
1984 ; STUDY OF THE REVERSIBLE DEGRADATION PROCESS IN CU2 SCDS HETEROJUNCTIONS,
T.V.TORCHINSKAYA, ZH. PRIKL.SPECTROSCOPY, ISSN 0021-9037, Vol.3, Pag.1174-1176, Revistas
Arbitradas ,
1984 ; THE CAUSE OF INSTABILITY OF CDSCUCL PHOTORESISTORS AND METHODS OF ITS
REMOVAL, T.V.TORCHINSKAYA, L.N.BAIDOKHA AND M.YA.RAKHLIN,, EXPERIMENTELLE.
TECHNIK DER PHYSIK, Vol.6, Pag.271-276, Revistas Arbitradas ,
1984 ; NEW METHOD OF NONDESTROYED CONTROL OF THE PHOTORESISTOR QUALITY,
T.V.TORCHINSKAYA, ELECTRONIC TECHNIQUE, Vol.4, Pag.3-7, Revistas Arbitradas ,
1983 ; AGING PROCESSES AND RECOMBINATION CENTRE PARAMETERS IN PHOTORESISTORS
BASED ON CDSCUCL THIN FILMS, T.V.Torchinskaya , L.N.Baidokha, I.Ya. Gorodezhkii, UKR. FIZ.
ZH. (UKRAINE J.OF PHYSICS)ISSN: 0960-6068, Vol.5, Pag.918-923, Revistas Arbitradas ,
1983 ; LEAKAGE CURRENT IN SI PIN DIODS, T.V.TORCHINSKAYA ISSN: 0960-6068, UKR. FIZ. ZH.
(UKRAINE J.OF PHYSICS)ISSN: 0960-6068, Vol.4, Pag.268-271, Revistas Arbitradas ,
1983 ; PHYSICAL MECHANISM OF LEDS ANDLASERS DEGRADATION, T.V.TORCHINSKAYA, ZH.
PRIKL. SPECTR., ISSN 0021-9037, Vol.9, Pag.371-379, Revistas Arbitradas ,
1983 ; Photostimulated creation and transformation local centers in II-VI semiconductors,, T.V.Torchynskaya,,
V USSR Conference ¿Radiation physics and chimistry of ionic crystals¿, Riga, USSR, Vol.3, Pag.7-9,
Memorias de congresos ,
1983 ; PHYSICAL NATURE OF LEDS AND SEMICONDUCTOR LASERS DEGRADATIONS,
T.V.TORCHINSKAYA, M.K.SHEINKMAN,, APPLIEDSPECTROSCOPY J., ISSN 0021-9037, Vol.8,
Pag.273-280, Revistas Arbitradas ,
1983 ; ¿The decreasing of the deep recombination centers in the IMPATT diodes¿,, Ismailov K.A., Konakova
R.V., Torchynskaya, L. Shcherbyna, 4-th ¿Lund¿ International Conference on deep level impurities in
semiconductors, may 1983, Hungary,, Vol.3, Pag.13-15, Memorias de congresos ,
1983 ; SMALL RADIATION DOSE EFFECTS IN SILICON HFDIODS, T.V.TORCHINSKAYA,
ELECTRONIC TECHNICS, Vol.4, Pag.35-38, Revistas Arbitradas ,
1982 ; Aging and fatigue processes in solar cells,, T.V.Torchynska, 1-th Union Conference¿Physical bases of
reliability and degradation of semiconductor devices¿, Kishinev,Moldova, Vol.4, Pag.22-25, Memorias de
congresos ,
1982 ; ¿ Mechanisms of photostimulayed defect formation in II-VI crystals and devices based on it¿,,
T.V.Torchinskaya, II-th Ukrainian Conference ¿Photoelectric phenomena in Semiconductors¿, Odessa,
USSR,, Vol.3, Pag.23-25, Memorias de congresos ,
1982 ; HIGH FREQUENCY NOISE CORRELATION WITH REVERSE IV CHARACTERISTICS IN SI
DIODES, T.V.TORCHINSKAYA, L.V.SHCHERBINA,P.P.LOSHIZKIY,, ELECTRONIC TECHNIQUE,
Vol.5, Pag.40-44, Revistas Arbitradas ,
1982 ; AGING PROCESSESIN PHOTORESISTOR BASED ON CDS CUCLTHIN FILMS,
T.V.TORCHINSKAYA, ELECTRONIC TECHNIQUE, Vol.3, Pag.3-5, Revistas Arbitradas ,
1982 ; ¿Mechanism of the photostimulated defect transformation in semiconductors¿,, N.E.Korsunskaya,
I.V.Markevich, T.V.Torchynskaya,, USSR Conference ¿Physics of Semiconductors¿, Baku, USSR,, Vol.2,
Pag.294-295, Memorias de congresos ,
1982 ; ANALYSIS OF THE PHYSICAL PROCESSESRESPONSIBLE FOR THE INSTABILITY OF
PHOTORESISTORS BASED ON II VI MATERIALS, N.E.Korsunskaya, I.V.Markevich,
T.V.Torchinskaya and A.M.Pavelez ISSN 1605-6582, OPTOELECTRONICS AND
SEMICONDUCTORTEKHNIQUE, Vol.4, Pag.98-100, Revistas Arbitradas ,
1982 ; PHOTODEGRADATION INVESTIGATION IN PHOTORESISTORS BASED ON POLICRYSTAL
CDS CU CL FILMS, T.V.TORCHINSKAYA M.YA.RACHLIN, L.N.BAIDOKHA, L.F.ZHAROVSKII,
APPLIED SPECTROSCOPY J, N, ISSN 0021-9037, Vol.7, Pag.589-595, Revistas Arbitradas ,
1982 ; STUDIES OF THE PHOTOFATIQUE OF PHOTORESISTORS BASED ON CDSCUCL
POLYCRYSTAL FILMS, T.V.TORCHINSKAYA, ZH. PRIKL. SPECTROSCOP., ISSN 0021-9037,
Vol.7, Pag.821-827, Revistas Arbitradas ,
1982 ; Photostimulated processes in CdS-CuS solar cells,, T.V.Torchynska, II-th Ukrainian Republic
Conference ¿Photoelectric phenomena in Semiconductors¿, Odessa, USSR, Vol.4, Pag.222-225,
Memorias de congresos ,
1982 ; THE RECHARGE ENHANCED TRANSFORMATIONOF DONOR ACCEPTOR PAIRS AND
CLUSTERS IN CDS, N.E.KORSUNSKAYA, I.V.MARKEVICH , T.V.TORCHINSKAYA AND
M.K.SHEINKMAN, J. PHYS. CHEM. SOLIDS, ISSN: 0022-3697, Vol.9, Pag.475-483, Revistas
Arbitradas ,
1981 ; ¿Physical nature of the degradation of light emitting diodes and semiconductor lasers¿,, T.V.Torchynska,
USSR Conference of Luminescence, Leningrad, Vol.4, Pag.12-15, Memorias de congresos ,
1981 ; CENTER TRANSFORMATION PROCESSES AND SEMICONDUCTOR LASER PARAMETER
DECREASES,, T.V.TORCHINSKAYA AND M.K.SHEINKMAN,, QUANTUM ELECTRONICS J., ISSN
1560-8034, Vol.11, Pag.75-85, Revistas Arbitradas ,
1981 ; Alteration of the Luminescence spectra of sintered layers of CdS:Cu:CL due to photoenhanced
processes, N.E.Korsunskaya, I.V.Markevich, T.V.Torchinskaya, A.M.Pavelez, S.A.Supko, G.A.Fedorus,
APPLIED SPECTROSCOPY J., ISSN 0021-9037, Vol.3, Pag.1101-1103, Revistas Arbitradas ,
1981 ; PHOTO DEGRADATION MECHANISMS IN PHOTORESISTORS BASED ON CDS CU CL
CONGLOMERATED LAYERS, N.E.Korsunskaya, I.V.Markevich, T.V.Torchinskaya, A.M.Pavelez,
S.A.Sipko ISSN: 0960-6068, UKR. FIZ. ZH. (UKRAINE J.OF PHYSICS), Vol.6, Pag.1335-1340, Revistas
Arbitradas ,
1981 ; PHOTOENHANCED PROCESSES AND LOCAL CENTRE INTERACTION IN ZNSE
MONOCRYSTALS, N.E.Korsunskaya, Krivko T.G., I.V.Markevich and T.V.Torchinskaya, M.K.Sheinkman,
ISSN: 0960-6068, UKR. FIZ. ZH. (UKRAINE J.OF PHYSICS), Vol.6, Pag.662-667, Revistas Arbitradas ,
1981 ; CHANGES OF THE LUMINESCENCE SPECTRA AT PHOTOSTIMULATED PROCESSES IN
ANNEALED CDS CU CL LAYERS, T.V.TORCHINSKAYA,, ZH. PRIKL. SPECTROSCOP., ISSN
0021-9037, Vol.3, Pag.637-639, Revistas Arbitradas ,
1980 ; ¿Mechanisms of photochemical Reactions in Semiconductors,, N.E.Korsunskaya, I.V.Markevich,
T.V.Torchinskaya, II-USSR Conference ¿Physics of Deep defects in Semiconductors ¿, Tashkent SU,,
Vol. , Pag.98-102, Memorias de congresos ,
1980 ; ¿ Photo (recombination) enhanced local center transformation in CdS and ZnSe monocrystals¿,,
N.E.Korsunskaya, I.V.Markevich, T.V.Torchinskaya, Int. Conference ¿Radiation defects in
Semiconductors and Related materials¿, Tbilissi, USSR,, Vol. , Pag.676-679, Memorias de congresos ,
1980 ; Memory effects, stimulated by the low temperature annealing or doping in CdS crystals, Torchynskaya
T.V.,, VI International Conference Optics and Photoelectric phenomena in Solid State¿, Varna,
Bulgaria, Vol.3, Pag.13-15, Memorias de congresos ,
1980 ; ¿Mechanisms of photochemical Reactions in Semiconductors,, N.E.Korsunskaya, I.V.Markevich,
T.V.Torchinskaya,, II-USSR Conference ¿Physics of Deep defects in Semiconductors ¿, Tashkent SU,
Vol.1, Pag.98-102, Memorias de congresos ,
1980 ; NEW LUMINESCENCE BAND IN CDS CRYSTALS DOPED WITH LI,,
N.E.Korsunskaya,I.V.Markevich, T.V.Torchinskaya and B.M.Bulakh, ISSN: 0960-6068, UKR. FIZ. ZH.
(UKRAINE J.OF PHYSICS), Vol.3, Pag.511-513, Revistas Arbitradas ,
1980 ; RECOMBINATION STIMULATED CONVERSION OF COMPLEX LUMINESCENCE CENTRES
IN CDS CRYSTALS, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND
M.K.SHEINKMAN ISSN 0038-5700 Después 1991 Semiconductors ISSN 1063-7826, SOV. PHYS.
SEMICONDUCTO, ISSN 0038-5700, Vol.4, Pag.259-262, Revistas Arbitradas ,
1980 ; PHOTOSENSITIVITY DEGRADATION MECHANISM IN CDSCU SINGLE CRYSTALS,
N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND M.K.SHEINKMAN, PHYS.
STAT. SOLID (A), ISSN 1862-6300, Vol.8, Pag.565-572, Revistas Arbitradas ,
1980 ; SHALLOW DONOR ROLE IN PROCESS OF PHOTOCONDUCTIVITY DEGRADATION IN
CDSCU CRYSTALS, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND
M.K.SHEINKMAN, PISMA IN TEKHN. FIZ. ZH., ISSN 1063-7850, Vol.5, Pag.120-124, Revistas
Arbitradas ,
1980 ; ELECTRODIFFUSION OF DEEP DONORS IN CDSCU CRYSTALS, M.K.SHEINKMAN,
N.E.KORSUNSKAYA, I.V.MARKEVICH AND T.V.TORCHINSKAYA ISSN 0038-5700 Después 1991
Semiconductors ISSN 1063-7826, SOV. PHYS. SEMICONDUCTORS, ISSN 0038-5700(USA), Vol.3,
Pag.1204-1205, Revistas Arbitradas ,
1980 ; ELECTRODIFFUSION OF SHALLOW DONORS IN CDS CRYSTALS, N.E.KORSUNSKAYA,
I.V.MARKEVICH, T.V.TORCHINSKAYA AND M.K.SHEINKMAN, J.PHYS.C. SOLID STAT.PHYS.,
ISSN 0022-3719 (Print), Vol.4, Pag.2975-2978, Revistas Arbitradas ,
1980 ; ROLE OFSHALLOW DONORS IN PHOTOCONDUCTIVITY DEGRADATION IN CDSCU
CRYSTALS, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND M.K.SHEINKMAN
ISSN: 0360-120X Despues 1991 Tech. Phys. Lett. ISSN 1063-7850, SOV.TECHN. PHYS. LETT, ISSN:
0360-120X, Vol.4, Pag.53-55, Revistas Arbitradas ,
1979 ; Transformation of donor-acceptor pairs and complexes in CdS crystals under the light excitation¿,
N.E.Korsunskaya, I.V.Markevich, T.V.Torchinskaya, I-st Ukrainian Republic Conference ¿Photoelectric
Phenomena in Semiconductors¿, Uzhgorod, USSR, Vol. , Pag.216-220, Memorias de congresos ,
1979 ; Mechanism of the photoconductivity degradation in CdS: Cu single crystals¿,, N.E.Korsunskaya,
I.V.Markevich, T.V.Torchinskaya,, I-st Ukrainian Republic Conference ¿Photoelectric Phenomena in
Semiconductors¿, Uzhgorod, USSR, Vol.2, Pag.146-147, Memorias de congresos ,
1979 ; INVESTIGATION OF THE DRIFT OF DEFECTS IN CDSLI CRYSTALS SUBJECTED TO
ELECTRIC FIELD, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND
M.K.SHEINKMAN ISSN 0038-5700 Después 1991 Semiconductors ISSN 1063-7826, SOV.PHYS.
SEMICONDUCTORS, ISSN 0038-5700, Vol.4, Pag.257-260, Revistas Arbitradas ,
1979 ; COMPLEX NATURE OF THE CENTERS RESPONSIBLE FOR THE GREEN EDGE
LUMINESCENCE EMITTED FROM CDS CRYSTA, N.E.Korsunskaya, I.V.Markevich,
T.V.Torchinskaya and M.K.Sheinkman and N.M.Krolevez, ISSN 0038-5700 Después 1991 Semiconductors
ISSN 1063-7826, SOV. PHYS. SEMICONDUCTORS , ISSN 0038-5700(USA), Vol.3, Pag.1058-1060,
Revistas Arbitradas ,
1979 ; INVESTIGATION OF LOCAL CENTER INTERACTION IN CDS CRYSTALS AND LIGHT
INDUCED VARIATION OF THIS INTERACTION, N.E.KORSUNSKAYA, I.V.MARKEVICH,
T.V.TORCHINSKAYA AND M.K.SHEINKMAN, RADIOTECHNICS ELECTRONICS, ISSN 0033-
7889, Vol.4, Pag.829-833, Revistas Arbitradas ,
1979 ; SPECTROSCOPIC STUDY OF THE INTERACTION OF LOCAL CENTRES IN CDS CRYSTALS
AND THE CHANGE IN THIS INTERACTION WITH ILLUMINATION, N.E.KORSUNSKAYA,
I.V.MARKEVICH, T.V.TORCHINSKAYA AND M.K.SHEINKMAN ISSN 0033-7889, RADIO
ENGEINERING AND ELECTRONIC PHYSICS (USA), Vol.5, Pag.132-136, Revistas Arbitradas ,
1978 ; PECULIARITIES OF THERMOSTIMULATED CONDUCTIVITY AND OPTICAL QUANCHING
OF THE PHOTOCURRENT IN CRYSTALS WITH THE AUGER EXCITATION OF
RECOMBINATION CENTERS, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND
M.K.SHEINKMAN ISSN 1862-6300, PHYS. STAT. SOLIDI (A), Vol.4, Pag.767-770, Revistas Arbitradas
,
1977 ; Investigation of new luminescence band and photochemical radiation center transformation in CdS:Li
monocrystals¿,, T.V.Torchinskaya,¿, Inter. Conference ¿ Science and Technique. of New Materials¿,
Moscow, USSR,, Vol.4, Pag.257-260, Memorias de congresos ,
1977 ; AUGERE XCITATION MECHANISM OF 1,62,0 MKM LUMINESCENCE BAND IN CDS CRYSTA,
N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA ISSN 0038-5700 Después 1991
Semiconductors ISSN 1063-7826, (SOV.PHYS.) SEMICONDUCTORS, ISSN 0038-5700, Vol.3, Pag.1380-
1382, Revistas Arbitradas ,
1977 ; INVESTIGATION OF THE NATURE OF THE RECOMBINATION CENTERS RESPONSIBLE FOR
THE 0,95MKM LUMINESCENCE BAND OF CDS, N.E.KORSUNSKAYA, T.V.TORCHINSKAYA,
I.V.MARKEVICH, ISSN 0038-5700 Después 1991 Semiconductors ISSN 1063-7826, SOV.PHYS.
SEMICONDUCTORS, ISSN 0038-5700, Vol.3, Pag.72-74, Revistas Arbitradas ,
1977 ; CHARACTERISTICS OF THE AUGER EXCITATION SPECTRA OF THE
PHOTOLUMINESCENCE AND PHOTOCURRENTIN COMPENSATED CDS CRYSTALS,
N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND V.V.DYAKIN, ISSN 0038-5700
Después 1991 Semiconductors ISSN 1063-7826, SOV.PHYS. SEMICONDUCTORS , ISSN 0038-5700
(USA), Vol.3, Pag.332-334, Revistas Arbitradas ,
1977 ; COMPLEX NATURE OF DEEP LUMINESCENCECENTERS IN CDS CRYSTALS,
N.E.KORSUNSKAYA, I.V.MARKEVICH I.V., T.V.TORCHYNSKAYA, M.K. SHEINKMAN,
SOV.PHYS.SOLID STATE, ISSN 0367-3294, Vol.4, Pag.130-133, Revistas Arbitradas ,
1977 ; DONOR ACCEPTOR INTERACTIONS AND PHOTOCHEMICAL REACTIONS DIFFERENT
TYPES IN MONOCRYSTALS CDS, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA
AND M.K.SHEINKMAN ISSN: 0960-6068, UKR. FIZ. ZH. (UKRAINE J.OF PHYSIC, Vol.7, Pag.363-
369, Revistas Arbitradas ,
1976 ; BULK CHARGE INVESTIGATION IN NBO FILMS, T.V.TORCHINSKAYA, G.I.BOGDAN. ,
E.G.ZAKHAREVICH, SEMICONDUCTOR TEKHNICS AND MICROELECTRONICS, Vol.4, Pag.62-
65, Revistas Arbitradas ,
1976 ; INVESTIGATION OF BULK CHARGE DEPENDENCE ON NBO FILM STRUCTURES,
T.V.TORCHINSKAYA, G.I.BOGDAN, S.I.BOZHKO,, IZV. VUZ.,SER. RADIOELECTRONICS, Vol.3,
Pag.61-63, Revistas Arbitradas ,
1976 ; INVESTIGATION OF HUMIDITY PENETRATION IN PROTECTION LAYER BASED ON
BOTOSILICAT GLAsses, T.V.TORCHINSKAYA, G.I.BOGDAN, T.I.KLETCHENKOV,
SEMICONDUCTORS AND INSULATORS, Vol.6, Pag.41-46, Revistas Arbitradas ,
1976 ; RADIATIVE AND NONRADIATIVE TRANSITIONS MECHANISM AND DEEP CENTERS IN II-VI
COMPOUNDS and Nature of radiative defects, M.K.SHAINKMAN, N.KORSUNSKAYA,
I.MARKEVICH, IT.V.TORCHYNSKA, IZV, SOV, ACAD, SCIEN. ,PHYSICS, Vol.8, Pag.2290-2297,
Revistas Arbitradas ,
1976 ; PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY OFCDS LI SINGLE CRYSTALS,
N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND M.K.SHEINKMAN ISSN 0038-
5700 y Después 1991 Semiconductors ISSN 1063-7826, SOV.PHYS.SEMICONDUCTORS, ISSN 0038-
5700, Vol.3, Pag.176-178, Revistas Arbitradas ,
1976 ; EMISSION CENTERS AND RADIATIVE AND RADIATIONLESS TRANSITION MECHANISM IN
II-VI COMPOUNDS, M.K.SCHEINKMAN, N.E.KORSUNSKAYA, T.V.TORCHINSKAYA,
I.V.MARKEVICH ISSN 0568-5230 despues 1991, ISSN 1062-8738, IZV. AKAD.NAUK . FIZIKA, ISSN
0568-5230, Vol.7, Pag.2290-2297, Revistas Arbitradas ,
1976 ; INVESTIGATION OF THE STRUCTURE AND BULK CHARGE OF NBO FILMS AFTER AGING,
T.V.TORCHINSKAYA, G.I.BOGDAN, S.I.BOZHKO, SEMICONDUCTORS AND INSULATORS, Vol.3,
Pag.55-57, Revistas Arbitradas ,
1975 ; BULK CHARGE CONNECTION WITH NONLINEAR EFFECTS IN NBO FILMS,
T.V.TORCHINSKAYA, L.V.SHCHERBINA, G.I.BOGDAN, IZV. BINITI, Vol.5, Pag.222-227, Revistas
Arbitradas ,
LIBROS
2014
;
SPECIAL ISSUE IMRC 2013 OF THE PHYSICA B JOURNAL, Editores: T.V.Torchynska, L. Khomenkova, G.
Polupan, G. Burlak, ELSEVIER, ISBN0921-4526
2014
; MRS PROCEEDINGS, IMRC 2013 MEETING, SYMP.7E LIBRO ¿ LOW-DIMENSIONAL SEMICONDUCTOR
STRUCTURES¿:, Editores: T.V. Torchynska, L. Khomenkova, G. Polupan, G. Burlak Cambridge University Press
(http://journals.cambridge.org/opl)., CAMBRIDGE UNIVERSITY PRESS, ISBN978-1-60511-594-8
2013
;
SPECIAL ISSUE OF PHYSICA E (ELSEVIER), Editores T.V. Torchynska, Yu. Vorobiev, Zs. Horvath, Selected papers
presented at IMRC2012, ELSEVIER, ISBN1386-9477
2012
; MRS ONLINE PROCEEDINGS, IMRC 2012 SYMPOSIUM 6B,
HTTP://JOURNALS.CAMBRIDGE.ORG/ACTION/DISPLAYISSUE?JID=OPL&VOLUMEID=1534&IID=8853676,
Editors: T.V. Torchynska, Yu. Vorobiev, Zs. Horvath at the first it was published on line in 2012, v. 1534, and in 2013 these
papers were included in MRS proceeding v.1617 published as the book, ISBN: 978-1-60511-594
http://journals.cambridge.org/action/displayIssue?jid=OPL&volumeId=1534&iid=8853676 Cambridge University Press)
(http://journals.cambridge.org/opl). http://journals.cambridge.org/action/
displayIssue?jidOPL&volumeId=1534&iid=885367, CAMBRIDGE ONLINE LIBRARY, ISBNONLINE
2010
;
NANOCRYSTALS AND QUANTUM DOTS OF GROUP IV SEMICONDUCTORS, T.V.Torchynska, Yu. Vorobiev
(Editors), AMERICAN SCIENTIFIC PUBLISHER, ISBN1-58883-154-X
2006
;
MEMORIAS 11A REUNION NACIONAL ACADEMICA DE FISICA Y MATEMATICAS, Comite Editorial J.
Palacios Gomez, R. Acosta Abreu, F. Chavez Rivas, T. Torchynska, T. Kryshtab, F. Cruz Gandarilla, L.L. Gonzalez
Ramirez, INSTITUTO POLITECNICO NACIONAL, ISBN
1997
;
MECHANISMS OF DEGRADATION OF III-V SEMICONDUCTOR LIGHTEMITTING DIODES AND LASERS,
T.V.Torchynska, T.E.Berdinskikh, HARWOOD ACADEMIC PUBLISHER, ISBN90-5702-206-O
1995
;
THIN FILMS IN ELECTRONICS, Editores S.K. Sheinkman, T.V. Torchynska....., ACADEMIA DE CIENCIAS
UCRANIA, ISBN97-5316-413-1
1990
; DEFECT TRANSFORMATION PROCESSES IN LIGHT EMITTING AND PHOTOELECTRONICS
STRUCTURES, T. V. Torchynska Libro de docencia, "NAUKOVA DUMKA", ISBN00-1210-879-9
1990
;
"PHYSICS OF SEMICONDUCTORS", the set of authores M.K. Sheinkman, Yu. Shepelskii, T.V.Torchynska,.....,
"NAUKOVA DUMKA", ISBN12-0026-223-0
1986
;
PHYSICAL BASE OF RELIABILITY AND DEGRADATION OF SEMICONDUCTOR DEVICES,, The set of
authores M.K.Sheinkman, T.V.Torchynska, O. Snitko,...., "MIR", ISBN01-2995-315-0
1982
;
PHOTOELECTRICAL PHENOMENA IN SEMICONDUCTORS,, M.K..Sheinkman, T.V.Torchynska, N. Korsunska,
E. Salkov, O. Snitko, "NAUKOVA DUMKA", ISBN17-0401-535-0
1979
;
PHOTOELECTRICAL PHENOMENA IN SEMICONDUCTORS, M.K.Sheinkman, T.V.Torchynska, E. Salkov, O.
Snitko., NAUKOVA DUMKA, ISBN20-0400-557-0
1978
; THE STUDY OF MECHANISM OF PHOTOCHEMICAL REACTION AND PHOTOCURRENT DEGRADATION
IN II-VI SEMICONDUCTORS, T.V. Torchynska Libro de docencia, "NAUKOVA DUMKA", ISBN02-2534-301-9
1976
; MEMORIAS DE IV USSR CONFERENCE ¿PHYSICS, CHEMISTRY AND TECHNICAL APPLICATIONS OF II-
VI SEMICONDUCTORS¿, ODESSA, USSR, 1976., Editores, E. Salkov, M. Sheinkman, Yu. Shepelskii,
T.Torchynska,.O. Snitko, ACADEMIA DE CIENCIAS, UCRANIA, ISBN012-23-4356-0
CAPITULOS DE LIBROS
2015 ; "Physical reasons of emission varying in CdSe/ZnS and CdSeTe/ZnS quantum dots at bioconjugation to
antibodies",, " Quantum Dots - Theory and Applications", p. 151-180, 2015, InTech Publisher, Croatia, ISBN
978-953-51-2155-8, EDITED BY VASILIOS N. STAVROU, INTECH , CROATIA,, Vol. 1, Pags. 30,
Tetyana Torchynska
2012 ; INAS QUANTUM DOTS IN SYMMETRIC INGAAS/GAAS QUANTUM WELLS, Quantum Dots /
Book 1.Fingerprints in the Optical and Transport Properties of Quantum Dots, DR. AMEENAH AL-
AHMADI,ISBN: 979-953-307-308-7, INTECH PUBLISHER, CROATIA, Vol. 1, Pags. 27,
T.Torchynska,INTECH PUBLISHER, CROATIA, ISBN: 979-953-307-308-7
2011 ; SEMICONDUCTOR II-VI QUANTUM DOTS WITH INTERFACE STATES AND THEIR
BIOMEDICAL APPLICATIONS,, Advanced Biomedical Engineering, ISBN 978-953-307-555-6
GAETANO D. GARGIULO, (CO-EDITOR): ALISTAIR MCEWAN (ED.),, INTECH PUBLISHER,
CROATIA, Vol. 1, Pags. 43, Tetyana Torchynska and Yuri Vorobiev, ISBN 978-953-307-555-6
2010 ; OPTICAL PROPERTIES OF NANOCTRUCTURES MATERIALS, Nanocrystals and quantum dots of
group IV semiconductors, ISBN: 1-58883-154-X T.V.TORCHYNSKA, YU.V. VOROBIEV, AMERICAN
SCIENTIFIC PUBLISHER, Vol. 1, Pags. 35, Yu. V. Vorobiev, T. V. Torchynska
2010 ; SIC NANOCRYSTAL STRUCTURES, Nanocrystal and quantum dots of group IV semiconductors, ISBN:
1-58883-154-X T.V.TORCHYNSKA, YU. V. VOROBIEV, AMERICAN SCIENTIFIC PUBLISHER, Vol.
1, Pags. 31, T. V. Torchynska , L.V. Shcherbyna
2010 ; SI AND GE QUANTUM DOT STRUCTURES, Nanocrystals and quantum dots of group IV
semiconductors, ISBN: 1-58883-154-X T.V.TORCHYNSKA, YU. V. VOROBIEV,, AMERICAN
SCIENTIFIC PUBLISHER, Vol. 1, Pags. 44, T.V.Torchynska,
2010 ; NANOCRYSTALS AND QUANTUM DOTS. SOME PHYSICAL ASPECTS, Nanocrystals and quantum
dots of group IV semiconductors, ISBN: 1-58883-154-X T. V. TORCHYNSKA, YU. V. VOROBIEV,
AMERICAN SCIENTIFIC PUBLISHER, Vol. 1, Pags. 40, T. V. Torchynska
ISBN: 1-58883-154-X
2008 ; PHOTOLUMINESCENCE OF DIFFERENT PHASE SI NANOCLUSTERS IN A-SI(ISBN: 978-1-
60511-077-6), Amorphous and Polycrystalline Thin film silicon Science and Technology, American MRS
Proceeding,(ISBN: 978-1-60511-077-6) A. NATHAN, A. FLEWITT, J. HOU, S. MIYAZAKI, J. YANG,
AMERICAN MRS PRESS, Vol. 1066, Pags. 05, Tatyana V. Torchynska
2006 ; RAMAN STUDY OF BIOCONJUGATED CDSE/ZNS QDS (ISBN 5-93634-019-8), Nanostructures:
Physics and Technology (ISBN 5-93634-019-8) ZH. ALFEROV, L. ESAKI, IOFFE INSTITUTE ST.
PETERSBURG, Vol. 14, Pags. 04, T.V.Torchynska, A. Diza Cano, S. Ostapenko, Yu. V. Vorobiev, S.
Jimenez Sandoval, J. Gonsales, T. Zhukov
2006 ; PREPARATION AND INVESTIGATION OF SIC POROUS SUB MICRON LAYERS ON THE
SUBSTRATE OF SI NANOWIRES(ISBN 970-36-0355-6), Mmemorias de 9 Congreso Nacional de
Ingenieria electromecanica y de sistemas (ISBN 970-36-0355-6) D. R. VEGA, IPN, MEXICO, Vol. 1, Pags.
1, A. Diaz Cano, M. Moralez Rodriguez, T. Torchynska, S. Saddow, Zh. Shiskin, S. Jimenez Sandoval, G. R.
Paredes Rubio,
2005 ; MULTI EXCITED STATE PHOTOLUMINESCENCE MAPPING ON INAS/INGAAS QD
STRUCTURES (ISBN 5-93634-017-1), Nanostructures: Physics and Technology, (ISBN 5-93634-017-1)
ZH. ALFEROV, L. ESAKI,, IOFFE INSTITUTE ST PETERSBURG, Vol. 13, Pags. 392, T.V.Torchynska,
M. Dybiec, P. G. Eliseev
2005 ; PHOTOLUMINESCENCE MECHANISM IN SI AND GE NANOCRYSTALLITES EMBEDDED IN
DIFFERENT TYPES OF MATRIXES, Semiconductor Nanocrystals (ISBN 963 7371 20 6, ISBN 963 7371
18 4) B. PODOR, ZS. J. HORVATH, P. BASA, MAGYAR TUDOMANYOS AKADEMIA, Vol. 2, Pags.
411, T. Torchynska
2004 ; RAMAN SCATTERING CHARACTERIZATION OF MACRO AND NANOPOROUS SILICON
(ISBN 84-608-0071-7), Porous semiconductors, Science and Technology,(ISBN 84-608-0071-7) L.
CANHAM, A. NASSIOPOULOU, VITALI PARKHUTIK, TEOBALDO JORDA Y CIA, Vol. 1, Pags. 436,
N. Korsunska, B. Bulakh, B. Jumaev, L. Khomenkova, T. Torchynska, V. Yukhimchyk,
2004 ; MAGNETIC FIELD EFFECT ON THE VISIBLE PHOTOLUMINESCENCE OF POROUS SILICON
(ISBN 84-608-0071-7), Porous semiconductors, Science and Technology (ISBN 84-608-0071-7) L. T.
CANHAM, A. NASSIOPOULOU, V. PARKHUTIK, TEOBALDO JORDA Y CIA, Vol. 1, Pags. 154,
T.V.Torchynska, L. Khomenkova, V. Zakharchenko, J. Gonsalez, Y. Vorobiev,
2004 ; SI WIRE LIGHT EMISSION CHANGES DURING SI/SIOX INTERFACE FORMATION, (ISBN 1-
55899-758-X), Amorphous and Nanocristalline silicon science and technology, 2004 MRS Symposium
Proceeding (ISBN 1-55899-758-X) G. GANGULY, M. KONDO, E. A. SCHIFF, R. CARIUS, RAMA
BISWAS, MRS PRESS, Vol. 808, Pags. 5, F. G. Becerril Espinoza, T. Torchynska, M. Moralez Rodriquez, L.
Khomenkova, L. V. Scherbina,
2004 ; RADIATIVE CHANNEL COMPETITION IN SI NANOSTRUCTURES (ISBN 84-608-0071-7), Porous
semiconductors, Science and Technology,(ISBN 84-608-0071-7) L. CANHAM, A. NASSIOPOULOU, V.
PARHUTIK,, TEOBALDO JORDA Y CIA, Vol. 1, Pags. 434, L. Khomenkova, N. Korsunska, M.
Sheinkman, T. Stara, T. Torchynska, F. Becerril Espinoza
2004 ; SHELL MODEL OF SEMICONDUCTOR QUANTUM DOTS, Proceeding of SPIE Conference, San-Jose,
CA, USA, January 2004. (ISBN 9780819436016) MAREK OSINSKI, HIROSHI AMANO, FRITZ
HENNEBERGER,, SPIE PRESS BELLINGHAM (WA), Vol. 5349, Pags. 46, P.G.Eliseev, D.P. Popescu,
T.V.Torchynska, K.J.Malloy, A.Stintz,
2004 ; PHOTOCURRENT SPECTRAL RESPONSE OF POROUS SILICON DIODES (ISBN 84-608-0071-7),
Porous Semiconductors, Science and Technology, (ISBN 84-608-0071-7) L. T. CANHAM, A.
NASSIOPOILOU, V. PARKHUTIK,, TEOBALDO JORDA Y CIA, Vol. 1, Pags. 314, T. Torchynska, A.
Vivas Hernandez, M. Morales Rodrigues, S. Jimenez Sandoval, R. Pena Sierra, M Estrada Cuerto, G.R.
Paredes Rubio.
1998 ; SEVERAL WAYS OF EXCITATION AND DEGRADATION PROCESSES OF POROUS SILICON
PHOTOLUMINESCENCE, HETEROSTRUCTURE EPITAXY AND DEVICES, ISBN 0-7923-5012-X
(HB), ISBN 0-7923-5012-X (HB) ED. P.KORDOS, J.NOVAK, NATO SCIENCE SERIA, KLUWER
ACADEMIC PUBLISHER, Vol. 1, Pags. 15, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA,L.YU.
KHOMENKOVA,
ISBN 0-7923-5012-X (HB),
ISBN 0-7923-5012-X (HB)
1997 ; MECHANISMS OF III-V LIGHT EMITTING DIODE BULK DEGRADATION, PHYSICS OF
SEMICONDUCTOR DEVICES, ISBN 81-7319-200-6 ED. V.KUMAR AND S.K.AGARWAL,, NAROSA
PUBLISHING HOUSE, Vol. 1, Pags. 20, T.V.TORCHINSKAYA
1995 ; RECOMBINATION ENHANCED DEFECT REACTIONS AND ROLE OF RED EMITTING LIGHT
IN GAP LEDS DEGRADATION, FABRICATION AND CHARACTERIZATION OF ADVANCED
MATERIALS, ISBN 91-71393006 ED. S.W.KIM AND S.J.PARK,, MRS SOUTH KOREA, Vol. 1, Pags.
15, T.V.TORCHINSKAYA,
1995 ; GERMANIUM RELATED DEEP CENTERS IN ALGAAS EPITAXIAL LAYERS, FABRICATION
AND CHARACTERIZATION OF ADVANCED MATERIALS, ISBN 91-71393006 ED. S.W.KIM AND
S.J.PARK,", MRS SOUTH KOREA, Vol. 1, Pags. 18, T.V.TORCHINSKAYA,
1995 ; DEPENDENCE OF POROUS SILICON PHOTOLUMINESCENCE FROM THE SUBSTANCE
ONSILICON WIRE SURFACE, THIN FILMS IN ELECTRONICS, ISBN 97-5316-413-1 KHERSON
UNIVERSITY, NAUKOV DUMKA, Vol. 1, Pags. 15, T. V.TORCHINSKAYA,
N.E.KORSUNSKAYA,B.DZUMAEV,
1994 ; CHARACTERIZATION OF DEEP LEVEL DEFECTS IN MOCVDINXGA1XAS LAYER, SEMI
INSULATING III V MATERIALS, ISBN 02-1364-923-0 ED. M.GODLEVSKII,, WORLD SCIENTIFIC,
Vol. 1, Pags. 16, T.V.TORCHINSKAYA, V.I.KOOSHNIRENKO T, L.V.SHCHERBINA, C.J.MINER
1991 ; DEEP CENTERS IN ALGAAS HETEROEPITAXIAL DIODES,, POLYCRYSTALLINE
SEMICONDUCTORS II , ISBN: 35-4053-613-2 ED. J.H.WERNER, H.P.STRUNK, SPRINGER-VERLAG,
Vol. 2, Pags. 16, T.V.TORCHINSKAYA,
ISBN: 35-4053-613-2
1979 ; DEEP CENTERS IN II-VI WIDE GAP SEMICONDUCTORS, PROBLEMS OF PHYSICS AND
TECHNOLOGY OF THE WIDE GAP SEMICONDUCTORS, M. MILVIDSKIY,, " NAUKA", MOSCOW,
RUSIA, Vol. 3, Pags. 14, T.V.TORCHINSKAYA, M. Sheinkman
;REPORTES TECNICOS
13/10/2014 ; FINAL PARA PROYECTO CONACYT 000130387, CONACYT, , Tetyana V. Torchynska, Pags. 25
13/08/2014 ; REPORTE FINAL PARA PROYECTO CONACYT N 000207604, CONACYT, , T.V.Torchynska, Pags.
10
09/02/2011 ; INVESTIGACION DE LAS PROPIEDADES OPTICAS EN ESTRUCTURAS CON
NANOCRISTALES Y PUNTOS CUANTICOS DE SEMICONDUCTORES DEL GRUPO IV Y III-V
PARA DISPOSITIVOS DE NUEVA GENERACION, CONACYT, , T.V. Torchynska, Pags. 40
22/11/2010 ; ¿MODIFICACIÓN DE LOS PROPIEDADES ÓPTICAS DE PUNTOS CUÁNTICOS DE CDSE/ZNS
EN PROCESOS DE BIOCONJUGACION CON ANTICUERPOS¿, CONACYT, , , Pags. 27
12/09/2006 ; SPECTOSCOPIC CHARACTERIZATION OF NANOPOROUS SIC, CONACYT, , T.V.Torchynska, G.
Polupan,, Pags. 30
08/08/2006 ; ¿Spectoscopic characterization of nanoporous SiC¿, CONACYT MEXICO, , T.V.Torchynska, Pags. 27
15/09/2005 ; CARACTERIZACION ESPACIAL RESUELTA DE CAPAS NANOPOROSAS DE SIC, CONACYT, ,
T,Torchynska, Pags. 25
16/12/2004 ; INVESTIGACION DE FOTOLUMINESCENCIA Y EXCITACION DE FL EN ESTRUCTURAS DE
BAJA DIMENCIONALIDAD A BASE DE SI, CONACYT, , T.Torchynska, Pags. 31
13/12/2004 ; CREACION Y INVESTIGACION DE ESTRUCTURAS SEMICONDUCTORES DE BAJO
DIMENCIONSLIDAD, CONACYT, , T. Torchynska, Pags. 41
12/12/2003 ; CREACION E INVESTIGACION DE NANESTRUCTURAS DE SI, CONACYT, , T. Torchynska, Pags.
21
11/12/2003 ; Creation and investigation of light emitting low dimensional structures based on semiconductor
materials¿., CONACYT MEXICO, , T.V.Torchynska, Pags. 20
10/12/2003 ; THEORETICAL AND EXPERIMENTAL INVESTIGATION OF OPTOELECTRONIC
PROPERTIES OF INAS-GAAS QUANTUM DOT STRUCTURES¿, CONACYT, , T. V. Torchynska,
Pags. 22
15/12/2002 ; DESARROLLO DE TECNOLOGIA E INVESTIGACION DE LAS PROPIEDADES OPTICAS DE
SOLUCION SOLIDA PARA APLICACIONES ELECTRONICAS, CONACYT, , T. Torchynska, Pags.
27
01/09/1999 ; Investigation of silicon nanocrystals photoluminescence and it¿s applications¿, 1999,, ACADEMIA
NACIONAL DE CIENCIAS DE UCRANIA, , T.V.Torchynska, L.Khomenkova, N.Korsunska,, Pags. 75
01/09/1998 ; 258. ¿ Porous silicon research by Auger, SIMS, FTIR and X-ray emission methods¿, ACADEMIA
NACIONAL DE CIENCIAS DE UCRANIA, , T.V.Torchynska, L.Khomenkova, N.Korsunska, Pags. 45
01/09/1998 ; Theoretical Modeling, Development Technology and Creation of high energy cascade III-V solar cell
based on multilayer heterostructures GaAs and it¿s solid solution, ACADEMIA NACIONAL DE
CIENCIAS DE UCRANIA, , T. V. Torchynska, B. Lev, Pags. 53
01/09/1997 ; Analyses of Current status and Studding of problems of semiconductor solar cells creation for space
helioenergetics ¿,, ACADEMIA NACIONAL DE CIENCIAS DE UCRANIA, , T. V. Torchynska, Pags. 30
01/09/1995 ; 264. ¿Investigation of elementary processes of thermal and stimulated diffusion of atoms and defects
transformation and their reactions in semiconductors¿, INTERNATIONAL SCIENCE FOUNDATION
(USA, WASHINGTON), , T.V.Torchynska, M.K.Sheinkman, Pags. 43
01/09/1993 ; Ukrainian - Canadian Industrial Co-operation, Laser Development, CANADIAN MINISTRY OF
INTERNATIONAL AFFAIR, , T. V. Torchynska, Pags. 37
11/12/1992 ; National State Space Program Analyses, NATIONAL SPACE AGENCY OF UKRAINE, , T.V.Torchynska,
E.S.Shcherbuna, Pags. 43
15/12/1989 ; Investigation of physical factors, limited the stability of GaP:N and AlGaAs LED¿s and development of
the recommendation for decreasing the size of the light-emitting crystals and increasing the life time¿,
RUSSIAN ACADEMY OF SCIENCES, , T.V.Torchynska, Pags. 50
15/12/1985 ; Investigation of electrophysical characteristics of laser heterostructures during degradation¿,, RUSSIAN
ACADEMY OF SCIENCIES, , T. V. Torchynska, Pags. 55
12/12/1983 ; RESEARCH OF NONEQUILIBRIUM AND OPTILCAL PROCESSES IN WIDE-BAND-GAP
SEMICONDUCTORS AND SEMICONDUCTOR DEVICES, AS WELL AS THEIR INDUSTRIAL
APPLICATION, ACADEMY DE CIENCIAS DE RUSIA, , T.V.Torchynska, Pags. 32
;RESEÑAS
2009 ; REFEREE NOTES TO MATERIAL SCIENCE AND ENGINEERING B J., Synthesis of mesoporous
YF3 nanoflowers via solvent extraction route, Letter to Editor, Critica , Pag. 1-2, , T.Torchynska
2008 ; REFEREE NOTES TO ¿¿NNANOSCALE RESEARCH LETTERS¿¿ JOURNAL, Electronic State and
Light Absorption in a Cylindrical Quantum dot having thin falciform cross section, Letter to Editor J.
Nnanoscale Research Letters, Critica , Pag. 1-2, , T. Torchynska-critica de Manuscript NRL-313-Electronic
State and Light Absorption in a Cylindrical Quantum dot having thin falciform cross section
2008 ; REFEREE NOTES TO ¿¿SUPERLATTICE AND MICROSTRUCTURE¿JOURNAL, Dynamic of non
radiative recombination at InGaN-GaN LED defect system, Letter to Editor, Critica , Pag. 1-2, , T.
Torchynska - critica de Manuscript SM08-166-Dynamic of non radiative recombination at InGaN-GaN LED
defect system
2008 ; REFEREE NOTES TO ¿¿SOLAR ENERGY¿JOURNAL, Influence of dysprosium doping on the electrical
and optical properties of CdO thin films, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska-critica de
Manuscript SE-D-08-00176 y 00176R1-Influence of dysprosium doping on the electrical and optical properties
of CdO thin films
2008 ; REFEREE NOTES TO ¿¿SUPERLATTICE AND MICROSTRUCTURES¿JOURNAL, Scanning
Photoluminescence spectroscopy of Bioconjugated quantum dots, Letter to Editor, Critica , Pag. 1-2, , T.
Torchynska- critica de Manuscript SM08-192-Scanning Photoluminescence spectroscopy of Bioconjugated
quantum dots
2008 ; REFEREE NOTES TO ¿¿SUPERLATTICE AND MICROSTRUCTURES¿¿JOURNAL, Pulsed photo
conductivity and carrier recombination lifetime spectroscopy of metal doped germanium, Letter to Editor,
Critica , Pag. 1-2, , T. Torchynska- critica de Manuscript SM08-167-Scanning Photoluminescence
spectroscopy of Bioconjugated quantum dots
2008 ; REFEREE NOTES TO ¿¿SOLAR ENERGY¿¿ JOURNAL, Investigation on Electron Beam Evaporated
CuIn0.85Ga0.15Se2 thin film solar cells, Letter to Editor, Critica , Pag. 1-1, , T. Torchynska - critics de
Manuscripts SE-D-08-00150, 00150R1, 00150R2 y 00150R3 Investigation on Electron Beam Evaporated
CuIn0.85Ga0.15Se2 thin film solar cells
2007 ; Referee notes to J. Nanoscience and Nanotechnology, Formation of Ge nanocrystals in SiO2 by electron
beam evaporation, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska
2007 ; EVALUACION PROYECTO INTERNACIONAL BILATERAL CONACYT MEXICO HUNGARIA,
Research and development of fuzzy Systems with generalizad operations, Carta a Direccion de Politica y
Cooperacion Internacional, Critica , Pag. 1-3, , T. Torchynska
2007 ; REFEREE NOTES TO J. ALLOYS AND COMPOUNDS, Structure and optical characterization of GaP
SiO2 co-sputtered films, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska
2007 ; REFEREE NOTES TO J. MATERIAL SCIENCE: MATERIALS IN ELECTRONICS, Characterization
of deep centers in semi insulating SiC and HgI2. Application of discharge current transient spectroscopy,
Letter to Editor, Critica , Pag. 1-2, , T. Torchynska
2007 ; Referee notes to Program Committee the Conference ICANS22, Orange Electroluminescence from
Chemically Synthesized Zinc Sulfide nanocrystals doped with Mg, Letter to Editor, Critica , Pag. 1-2, , T.
Torchynska
2007 ; Referee notes to Modern Phys. Letters, Photoluminescence composition and microstructure of porous
silicon prepared by different substrate, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska
2007 ; Referee notes to ¿¿phys. stat. solid.¿¿, Spatially resolved Raman piezo spectroscopic stress analysis in
CaMoO4 thin film grown on Si substrate, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska- critica de
Manuscript pssa. 200723557-Spatially resolved Raman piezo spectroscopic stress analysis in CaMoO4 thin
film grown on Si substrate
2006 ; Referee notes to Nano Letters Journal, Tunable light emission from quantum confinement excitons in TiSi2
catalyzed silicon nanowires, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska
2006 ; Referee notes to Nanotechnology NANO, Fabrixation and Characterization of high Q micro disk laser using
InAs quantum dot active regions, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska
2006 ; Referee notes to Solid State Electronics, The influence of microstructure on optical properties of porous
silicon, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska
2006 ; Referee notes to CONACYT DAC, Ptoyecto investigacion 46597, Letter to CONACYT, Critica , Pag. 1-4, ,
T.V.Torchynska
2006 ; Referee notes to Semiconductor Science and Technology, The influence of thermal annealing to the
characteristics of AlGaInP/GaInP multiple quantum wells LED wafers, Letter to Editor, Critica , Pag. 1-3, ,
T.V.Torchynska
2006 ; Referee notes to Journal "Semiconductor Science and Technology", A multiple quantum well integrated
with a selectively grown quaternary layer, Letter to Editor, Critica , Pag. 1-3, , T.V. Torchynska
2006 ; Referee notes to journal Nanotechnology, Selective growth of InGaAs/GaAs quantum dot chains on pre-
patterned GaAs (100), Letter to Editor, Critica , Pag. 1-3, , T.V.Torchynska
2006 ; Referee notes to journal Nanotechnology, : Improvement of the photostability of thiol-capped CdTe
quantum dots in aqueous solutions and in living cells by surface treatment, Letter to Editor, Critica , Pag. 1-3,
, T.V.Torchynska
2006 ; Referee notes to journal Nanotechnology, Fabrication and characterization of high Q micro disk laser using
InAs quantum dot active regions, Letter to Editor, Critica , Pag. 1-3, , T.V.Torchynska
2006 ; Referee notes to journal Non-Crystal Solids, Microscopic Modeling of the Optical Properties of
Semiconductor Nanostructures, Letter to Editor, Critica , Pag. 1-3, , T.V.Torchynska
2005 ; Referee notes to Int. Journal Superlattice and Microstructures, Photonic crystals based on QD structures,
LETTER TO EDITOR IN CHIEF, Critica , Pag. 1-3, , T.V.Torchynska
2005 ; Referee notes to phys. stat. solid., Stress dependence of Raman vibrational bands of PbWO4 single crystals,
Letter to Editor, Critica , Pag. 1-2, , T. Torchynska
2005 ; Referee notes to J. Non Crystalline Solids, Microscopic Modeling of the Optical properties of
Semiconductor Nanostructures, Letter to Editor, Critica , Pag. 1-2, , T, Torchynska
2005 ; Referee notes in "Semiconductor Science and technology", InGaN: An overview of the growth kinetics,
physical properties, Letter to Editor, Critica , Pag. 1-3, , T.V.Torchynska
2005 ; Referee notes to Inter. jour. Superlettice and Microstructures, Calculating the Sublevels of Multi-Quantum
Wells by the Theory of Electron Interference, Letter to Editor, Critica , Pag. 1-3, , T.V.Torchynska
2005 ; Referee notes to "Fondos Puebla", Investigation project, Letter to "Fondos Puebla", Critica , Pag. 1-3, ,
T.V.Torchynska
2004 ; Referee notes to Material Research Bulletin, Physical and electronic properties of ZnO AL/porous Silicon,
Letter to Editor, Critica , Pag. 1-3, , T.V.Torchynska
2004 ; Referee notes to J. Non Cryst. Solids, Novel amorphous SiOx quantum dots using polyacrilomid gel, Letter
to Editor, Critica , Pag. 1-2, , T. V. Torchynska
2004 ; REFEREE NOTE FOR REVISTA SUPERFICIES Y VACIO (MEXICO), CRITICAL THICKNESS OF
GEGAAS (001) EPITAXIAL FILMS, LETTER TO EDITOR IN CHIEF, Critica , Pag. 0-0, ,
T.V.Torchynska
2004 ; Referee notes to Material Science and Engineering B, Excitation transfer from porous silicon to polymer,
Letter to Editor, Critica , Pag. 1-2, , T.V.Torchynska
2003 ; REFEREE NOTE FORFOR INTERNATIONAL JOURNAL THIN SOLID FILMS (USA), AGING
EFFECT ON THE ANOMALOUS TEMPERATURE DEPENDENCE OF RED PHOTOLUMINESCENCE
FROM POROUS SILICON, LETTER TO EDITOR IN CHIEF, Critica , Pag. 1-3, , T.V.Torchynska
2003 ; Referee Note to Phys. Rev. B, Raman vibrtion modes in SiC thin films, Letter to Editor, Critica , Pag. 1-3, ,
T.V.Torchynska
2003 ; REFEREE NOTE FOR FOR INTERNATIONAL JOURNAL THIN SOLID FILMS (USA),
CHARACTERIZATION OF CIRCULAR POLARIZATION SWITCH OBSERVED IN
PHOTOCHEMICALLY ETCHED SILICON, LETTER TO EDITOR IN CHIEF, Critica , Pag. 1-3, ,
T.V.Torchynska
2003 ; REFEREE NOTE to INTERNATIONAL JOURNAL THIN SOLID FILMS (USA),
PHOTOLUMINESCENCE AND MICROSTRUCTURE OF SI AND C CODOPED SIO2 FILMS
PREPARED BY DUAL ION BEAM SPUTTERING, LETTER TO EDITOR IN CHIEF, Critica , Pag. 1-3, ,
T.V.Torchynska
2003 ; REFEREE NOTE to INTERNATIONAL JOURNAL NANOTECHNOLOGY (ENGLAND),
ELECTRONIC STATES IN RECTANGULAR QUANTUM WELL WIRES BASED ON A MODIFIED
PROFILE OF THE HETEROJUNCTION, LETTER TO EDITOR IN CHIEF, Critica , Pag. 1-3, ,
T.V.Torchynska
2002 ; REFEREE NOTE FOR INTERNATIONAL JOURNAL THIN SOLID FILMS (USA), BEHAVIOR OF
PLASMA HYDROGENATED NTYPE SILICON FLUORIDE MEDIA. COMPARASION WITH NON
HYDROGENATED SILICON, ETTER TO EDITOR IN CHIEF, Critica , Pag. 1-3, , T.V.Torchynska
2002 ; REFEREE NOTE FORFOR INTERNATIONAL JOURNAL Appl. Phys. Lett. (USA), STUDIES ON
THE TIME EVOLUTION OF PHOTOCURRENT AND PRESISTENT PHOTOCURRENT IN POROUS
SILICON EVIDENCE SUPPORTING PRESENCE OF A SIH, LETTER TO EDITOR IN CHIEF, Critica ,
Pag. 1-3, , T.V.Torchynska
2002 ; REFEREE NOTE FOR INTERNATIONAL JOURNAL APPLIED PHYSICS(USA), IN SITU
PHTOLUMINESCENCE STUDIES FROM SILICON SURFACE DURING PHOTOCHEMICAL ETCHING
PROCESS, LETTER TO EDITOR IN CHIEF, Critica , Pag. 1-2, , T.V.Torchynska
2002 ; Referee notes to Int. Journ. "physica status solidi", Stree dependence of Raman vibration bands of PbWO4,
Letter to Editor, Critica , Pag. 1-4, , T.V.Torchynska
2000 ; REFEREE NOTE FOR INTERNATIONAL JOURNAL THIN SOLID FILMS (USA), THE EFFECT OF
ANNEALING TIME ON THE PHOTOLUMINESCENCE OF VACUUM ANNEALED POROUS SILICON,
LETTER TO EDITOR IN CHIEF, Critica , Pag. 1-2, , T.V.Torchynska
PARTICIPACION EN
CONGRESOS
2015 ; , Luminescence transformation in mixture of ZnO and Carbon nanoparticles at mechanical processing,,
Extranjero, , II-VI-2015 : 17th International Conference on II-VI Compounds and Related Materials, 13-
18 September 2015, T. TORCHYNSKA, B. PEREZ MILLAN, M. KAKAZEY AND , Francia ,
2015 ; , Size dependent emission and exciton-light coupling in ZnO nanoscrystals, Extranjero, International
Conference on Polymers and Advanced Materials, POLYMAT Huatulco, Oaxaca, G. POLUPAN, T. V.
TORCHYNSKA, B. EL FILALI AND , México ,
2015 ; Annealing impact on Quantum well structure and Emission of InAs quantum dot with AlGaInAs
capping layer,, Nacional, XXIV International Material Research Congress, Can Cun , Mexico, T.V.
TORCHYNSKA, R. CISNEROS TAMAYO, I.J. GUERR , México ,
2015 ; BLUE EMISSION STIMULATION IN MIXTURE OF ZNO AND CARBON NANOCRYSTALS AT
MECHANICAL PROCESSING,, Extranjero, 227th ECS Meeting, Chicago, USA, May 24-28, 2015,
TETYANA V. TORCHYNSKA, BRENDA PEREZ MILLAN, , Estados Unidos ,
2015 ; COMPARATIVE STUDY DEFECT RELATED PHOTOLUMINESCENCE IN ZNO AND ZNO CU
NANOCRYSTALS OBTAINED BY SPRAY PYROLYSIS AND ANODIZATION METHODS,,
Extranjero, XXIV International Material Research Congress, Can Cun , Mexico,, B. EL FILALI, T.V.
TORCHYNSKA, A.I. DIAZ CANO , México ,
2015 ; Defect Related Emission of ZnO and ZnO Cu Nanocrystals Prepared by Electrochemical method,,
Extranjero, II-VI-2015 : 17th International Conference on II-VI Compounds and Related Materials, 13-
18 September 2015 Paris (France)., T. V. TORCHYNSKA, B. EL FILALI, A. MOSQUEDA AND ,
Francia ,
2015 ; DEFECT RELATED PHOTOLUMINESCENCE IN ZNO AND ZNO CU NANOCRYSTALS,
Extranjero, XXIV International Material Research Congress, Can Cun , Mexico,, T.V. TORCHYNSKA,
B. EL FILALI AND J.L. CASAS E , México ,
2015 ; Emission and structure transformation in mixture of ZnO and Carbon nanoparticles at mechanical
processing,, Extranjero, XXIV International Material Research Congress, Can Cun , Mexico,, E.
VELAZQUEZ LOZADA, T. TORCHYNSKA, B. PEREZ M , México ,
2015 ; Emission of Si quantum dots in silicon nitride films, Extranjero, , International Conference on Polymers
and Advanced Materials, POLYMAT Huatulco, Oaxaca, 18- 22 October 2015., T.V. TORCHYNSKA, A.
BENTOSA GUTIÉRREZ, J.L. CAS , México ,
2015 ; EMISSION VARIATION OF CdSeTe / ZnS QUANTUM DOTS BIOCONJUGATED TO PAPILLOMA
VIRUS ANTIBODIES,, Nacional, XXIV International Material Research Congress, Can Cun , Mexico,
J.A. JARAMILLO GÓMEZ, T.V. TORCHYNSKA, J.L. CASAS , México ,
2015 ; Light Emitting Properties Dependent on Nitride Stoichiometry of Si-rich-SiNX Films Grown by
PECVD, Extranjero, , II-VI-2015 : 17th International Conference on II-VI Compounds and Related
Materials, 13-18 September 2015 Paris (France)., T.V. TORCHYNSKA, J.L. CASAS ESPINOLA, J. A.
BEN , Francia ,
2015 ; LIGHT EMITTING PROPERTIES OF SI RICH SI3N4 FILMS GROWN BY PECVD METHOD,,
Extranjero, 227th ECS Meeting, Chicago, USA, May 24-28, 2015, T V. TORCHYNSKA, J.L. CASAS
ESPINOLA, G. POLUPAN , Estados Unidos ,
2015 ; PHOTOLUMINESCENCE AND STRUCTURAL PROPERTIES OF Si-RICH SILICON NITRIDE
FILMS GROWN BY PLASMA ENHACED CHEMICAL VAPOR DEPOSITION, Extranjero, XXIV
International Material Research Congress, Can Cun , Mexico, 13. J. A. BENTOSA GUTIÉRREZ, J. L.
CASAS ESPINO , México ,
2015 ; Physical reasons of emission transformation in CdSe/ZnS and CdSeTe/ZnS quantum dots at
bioconjugation, Extranjero, International Conference on Polymers and Advanced Materials, POLYMAT,
Huatulco, Oaxaca, 1. T. V. TORCHYNSKA , México ,
2015 ; STRAIN MODELING IN GaAs /In0.15Ga0.75As/GaAs QUANTUM WELLS WITH InAs QUANTUM
DOT STRUCTURES PREPARED AT DIFFERENT QD¿S GROWTH TEMPERATURES,, Extranjero,
XXIV International Material Research Congress, Can Cun , Mexico,, L.G. VEGA MACOTELA1, T. V.
TORCHYNSKA , México ,
2015 ; STRUCTURAL AND PHOTOLUMINESCENCE PROPERTIES OF ZnO:Er FILMS ON POROUS
SILICON CARBIDE,, Extranjero, XXIV International Material Research Congress, Can Cun , Mexico,
I. CH. BALLARDO RODRÍGUEZ, A. I. DIAZ CANO, T.V , México ,
2015 ; WEAK QUANTUM CONFINEMENT AND POLARITONS IN ZNO AND ZNO CU
NANOCRYSTALS, Extranjero, 227th ECS Meeting, Chicago, USA, May 24-28, 2015, TETYANA V.
TORCHYNSKA, BRAHIM EL FILALI, AARON , Estados Unidos ,
2014 ; EMISSION OF INAS QUANTUM DOTS EMBEDDED IN ALGAAS/INGAAS QUANTUM WELLS
WITH STRAIN REDUCING LAYER, Extranjero, ICOOPMA 2014,Sunday 27 July - Friday 1 August
2014, J.L. CASAS ESPINOLA, T.V. TORCHYNSKA, G. POLUPAN , Suiza ,
2014 ; ENHANCE OF PHOTOLUMINESCENCE AND RAMAN EFFECTS DUE TO CU NANOPARTICLES
EMBEDDED IN ZNO NANOCRYSTALS,, Extranjero, XXIII International Material Research
Congress, Can Cun , Mexico, Agosto 17-21, 2014., A.I. DIAZ CANO, B. EL FILALI, T.V. TORCHYNSKA
, México ,
2014 ; PHOTOLUMINESCENCE SPECTRUM TRANSFORMATION IN SI RICH SILICON NITRIDE
VERSUS SILICON NITRIDE STOICHIOMETRY, Extranjero, E-MRS 2014 Spring Meeting, Congress
Center in Lille (France) from May 26 to 30, 2014, .V. TORCHYNSKA, J.L. CASAS ESPINOLA, E.
VERGARA HE , Francia ,
2014 ; PHOTOLUMINESCENCE TREND IN MIXTURE OF ZNO AND CARBON NANOPARTICLES
DURING MECHANICAL ACTIVATION, Extranjero, XXIII International Material Research Congress,
Can Cun , Mexico, Agosto 17-21, 2014., E. VELÁZQUEZ LOZADA, T. TORCHYNSKA, B.
PEREMILLAN, , México ,
2014 ; PHYSICAL REASONS OF EMISSION VARIATION OF CDSETE/ZNS QUANTUM DOTS AT THE
BIOCONJUGATION,, Extranjero, E-MRS 2014 Spring Meeting, Congress Center in Lille (France) from
May 26 to 30, 2014., T. V. TORCHYNSKA, G. POLUPAN , Francia ,
2014 ; SIZE DEPENDENT EMISSION OF ZNO NANOSHEETS, Extranjero, E-MRS 2014 Spring Meeting,
Congress Center in Lille (France) from May 26 to 30, 2014., T. V. TORCHYNSKA1 AND B. EL FILALI ,
Francia ,
2014 ; STRAIN MODELING IN INXGA1-XAS/GAAS QUANTUM WELLS WITH INAS QUANTUM DOTS
AT THE VARIATION OF INXGA1-XAS COMPOSITION,, Extranjero, Congreso ICCMSE 2014,
Athens, Greece, 04-07 Abril, 2014., T. TORCHYNSKA, L. G. VEGA MACOTELA, G. POLUPAN , Grecia
,
2014 ; STRUCTURAL AND LIGHT EMITTING PROPERTIES OF SI-RICH-SI3N4 FILMS GROWN BY
PECVD METHOD, Extranjero, XXIII International Material Research Congress, Can Cun , Mexico,
Agosto 17-21, 2014., T.V. TORCHYNSKA, J.L. CASAS ESPINOLA, E. VERGA , México ,
2014 ; STUDY OF PHOTOLUMINESCENCE SPECTRUM VARIATION IN SI RICH SI3N4 VERSUS SI3N4
STOICHIOMETRY, Extranjero, XXIII International Material Research Congress, Can Cun , Mexico,
Agosto 17-21, 2014., T.V. TORCHYNSKA, J.L. CASAS ESPÍNOLA, E. VERGA , México ,
2014 ; VARIATION AND NON HOMOGENEITY OF PHOTOLUMINESCENCE SPECTRUM IN INAS
QDS EMBEDDED IN IN0.15GA0.85AS QWS AND ITS DEPENDENCE ON THE TEMPERATURE
AND EXCITATION POWER, Extranjero, E-MRS 2014 Spring Meeting, Congress Center in Lille
(France) from May 26 to 30, 2014.p.76,, I.J. GUERRERO MORENO,T. V. TORCHYNSKA, A. VIVAS ,
Francia ,
2013 ; BLUE SHIFT OF PHOTOLUMINESCENCE OF CDSE/ZNS CORE SHELL QUANTUM DOYS
CAUSED BY BIOCONJUGTION TO ANTI INTERLEUKIN 10 ANTIBODIES,, Extranjero, 21
International Symposium, Nanostructures: Physics and Nanotechnology, Sa, T.V.TORCHYNSKA,
YU.V. VOROBIEV, P.P.HORLEY, , Federación Rusia ,
2013 ; EMISSION AND STRUCTURE VARIETIES IN ZNO:AG NANORODS OBTAINED BY
ULTRASONIC SPRAY PYROLYSIS,, Extranjero, XII Int. Conf. on Microthechnology and Thermal
problems in Electronics, MICROTERM 2013, Lodz, POLAND, June 2013., E. VELÁZQUEZ LOZADA,
T.V. TORCHYNSKA, , , J. L. CASAS ESPINOLA L. CASTAÑEDA , Polonia ,
2013 ; EPR AND EMISSION STUDY OF SILICON SUBOXIDE NANOPILLARS,, Extranjero, XXII
International Material Research Congress, IMRCXXII, Can Cun, Mexico, August,11-15, 2013, V.
BRATUS, I. INDUTNYI, P SHEPELIAVIY T. TORCHYNSKA , México ,
2013 ; HIGH RESOLUTION XRD AND STRAIN ESTIMATION IN AL0.3GA0.7AS/IN0.15GA0.85AS
QUANTUM WELLS WITH EMBEDDED INAS QUANTUM DOTS,, Extranjero, XXII International
Material Research Congress, IMRCXXII, Can Cun, Mexico, August,11-15, 2013,, R. CISNEROS
TAMAYO, T.V. TORCHYNSKA, L. SHCHERBYNA , México ,
2013 ; INFRARED CDSETE/ZNS QUANTUM DOTS CONJUGATED TO PSEUDO RABIES VIRUS
ANTIBODIES,, Extranjero, XXII International Material Research Congress, IMRCXXII, Can Cun,
Mexico, August,11-15, CH. BALLARDO RODRIGUEZ, T. TORCHYNSKA, J. DOUDA J.A. JARAMILLO
GOMEZ, , México ,
2013 ; PHOTOLUMINESCENCE VARIATION OF INAS QUANTUM DOTS EMBEDDED IN INALGAAS
QUANTUM WELLS AT THERMAL ANNEALING,, Extranjero, XII Int. Conf. on Microthechnology
and Thermal problems in Electronics, MICROTERM 2013,, T. V. TORCHYNSKA G. POLUPAN G.
POLUPAN J.L. CASAS ESPINOLA D. DIOSDADO , Polonia ,
2013 ; PHOTOLUMINESCENCE, XRD AND HR-XRD STUDIES IN INGAAS/ GAAS QUANTUM WELLS
WITH EMBEDDED INAS QUANTUM DOTS OF DIFFERENT DENSITIES,, Extranjero, XXII
International Material Research Congress, IMRCXXII, Can Cun, Mexico, August,11-15, 2013, L. G.
VEGA MACOTELA, T. TORCHYNSKA , México ,
2013 ; PHYSICAL REASONS OF EMISSION VARIATION IN CDSE/ZNS QUANTUM DOTS
CONJUGATED TO ANTIBODIES, Extranjero, XXII International Material Research Congress,
IMRCXXII, Can Cun, Mexico, August,11-15, 2013, T. TORCHYNSKA, , México ,
2012 ; COMPARATIVE STUDY OF PHOTOLUMINESCENCE VARIATION IN INAS QUANTUM DOTS
EMBEDDED IN INGAALAS QUANTUM WELLS,, Extranjero, XXI International Material Research
Congress, August 12-17, 2012, Can Cun, Mexico, MRS Proceedings /Volume 1534 /2013,, J.L. CASAS
ESPINOLA, L. D. CRUZ. DIOSDADO T.V. TORCHYNSKA, G. POLUPAN , México ,
2012 ; DOUBLE CORE INFRARED (CDSETE) / ZNS QUANTUM DOTS CONJUGATED TO IGG
ANTIBODIES,, Extranjero, XXI International Material Research Congress, August 12-17, 2012, Can
Cun, Mexico, MRS Proceedings /Volume 1534 /2013,, JOSE L. CASAS ESPINOLA, CHETZYL
BALLARDO RODRIGUEZ T.V. TORCHYNSKA , México ,
2012 ; DOUBLE CORE INFRARED CDSETE/ZNS QUANTUM DOTS CONJUGATED TO PAPILOMA
VIRUS ANTIBODIES, Extranjero, XXI International Material Research Congress, August 12-17, 2012,
Can Cun, Mexico, MRS Proceedings /Volume 1534 /2013,, T.V. TORCHYNSKA J. A. JARAMILLO
GÓMEZ, J.L. CASAS ESPINOLA J..DOUDA , México ,
2012 ; ELECTRONIC EFFECTS IN CDSE/ZNS QUANTUM DOTS CONJUGATED TO IL-10
ANTIBODIES, Extranjero, NANOTECH, Canta Clara, USA, June 18-21, 2012. Technical Proceedings of
the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 , pp. 90-93., T.V.
TORCHYNSKA J. DOUDA, A.I.DIAZ CANO J.L. CASAS ESPINOLA, , México ,
2012 ; EMISSION AND HR-XRD STUDY IN INAS QUANTUM DOT STRUCTURES PREPARED AT
DIFFERENT QD¿S GROWTH TEMPERATURES,, Extranjero, XXI International Material Research
Congress, August 12-17, 2012, Can Cun, Mexico, MRS Proceedings /Volume 1534 /2013,, LEONARDO
G. VEGA MACOTELA T. V. TORCHYNSKA , México ,
2012 ; EMISSION MODIFICATION IN ZNO NANOSHEETS AT THERMAL ANNEALING, Extranjero, XXI
International Material Research Congress, August 12-17, 2012, Can Cun, Mexico, MRS Proceedings
/Volume 1534 /2013,, AARON I. DIAZ CANO, BRAHIM EL FILALI, J. L. CASAS T.V. TORCHYNSKA ,
México ,
2012 ; PHOTOLUMINESCENCE TRANSFORMATION OF CORE/SHELL CDSE/ZNS QUANTUM DOTS
AT THE CONJUGATION TO BIOMOLECULES,, Extranjero, XXI International Material Research
Congress, August 12-17, 2012, Can Cun, Mexico,Mater. Res. Soc. Symp. Proc. Vol. 1376 © 2012,, I. CH.
BALLARDO RODRÍGUEZ YE. SHCHERBYNA T. TORCHYNSKA, , México ,
2012 ; RAMAN SPECTRA OF CDSE/ZNS QUANTUM DOTS BIOCONJUGATED TO OVARIAN CANCER
ANTIBODIES,, Extranjero, XXI International Material Research Congress, August 12-17, 2012, Can
Cun, Mexico, Mater. Res. Soc. Symp. Proc. Vol. 1376 © 2012,, T.V. TORCHYNSKA A.L.QUINTOS
VAZQUEZ, , México ,
2012 ; SI QUANTUM DOT STRUCTURES AND SOME ASPECTS OF APPLICATIONS,, Extranjero, XXI
International Material Research Congress, August 12-17, 2012, Can Cun, Mexico,MRS Proceedings
/Volume 1534 /2013,, L. SHCHERBYNA T. TORCHYNSKA, , México ,
2012 ; STARK EFFECT IN LUMINESCENCE OF CORE/SHELL CDSE(CDSETE)/ZNS QUANTUM DOTS
CONJUGATED TO ANTIBODIES, Extranjero, International Material Research Congress, IMRCXXI,
Can Cun, Mexico, August,12-17, 2012., T.V. TORCHYNSKA , México ,
2011 ; CDSE/ZNS QUANTUM DOTS WITH INTERFACE STATES AS BIOSENSORS,, Extranjero, SPIE,
2011 Optics and Photonics, 21-25 August, 2011, San-Diego, USA, Biosensing and Nanomedicine IV,,
T.V.TORCHYNSKA, , Estados Unidos ,
2011 ; EFFECT OF ASPECT RATIO UPON THE ENRGY SPECTRUM OF AN ELECTRON IN A
PYRAMID-SHAPED QUANTUM DOT,, Extranjero, IV International Conference on Surfaces,
Materials and Vacuum, Puerto Vallarta, Jalisco, Mexico, 26-30 Sept. 2011., Y. VOROBIEV, T.
TORCHYNSKA, J. GONZALEZ-HERNAN , México ,
2011 ; ELASTIC STRAIN IN SYMMETRINAS QUANTUM DOT-IN-A-WELL STRUCTURES., Extranjero,
The Seventh Internationa Conference on Low Dimensional Structures and Devices, Telchac, Nuevo
Yucatan, Mexico, 22-27 May 2011, R.L. MASCORRO ALQUICIRA, T.V. TORCHYNSKA, G. GOMEZ ,
México ,
2011 ; HOMOGENEITY AND ELASTIC STRAIN IN SYMMETRIC INGAAS/GAAS QUANTUM WELLS
WITH EMBEDDED INAS QDS, Extranjero, 16th Semiconducting and Isolating Material Conference,
SIMC XVI, June 19-23, KTH, Stockholm, Sweden,, G. POLUPAN, L.G. VEGA MACOTELA, , T.V.
TORCHYNSKA , Suecia ,
2011 ; NEW GENERATION OF OPTOELECTRONIC DEVICES BASED ON SI NANOCRYSTALS,
Nacional, IEEE sec. Mexico, Conference ROC&C-2011, Acapulco, 27 Nov.-3 Dic.,2011, T.V.
TORCHYNSKA , México ,
2011 ; PECULIARITIES OF EXCITON EMISSION IN SIC NANOCRYSTALS,, Extranjero, International
Material Research Congress, IMRCXX, Can Cun, Mexico, August 2011,, T.V. TORCHYNSKA AND M.
MORALES RODRIGUEZ, , México ,
2011 ; PHOTOLUMINESCENCE EMISSION OF INAS DWELL INGAAS/GAAS STRUCTURES,,
Extranjero, International Material Research Congress, IMRCXX, Can Cun, Mexico, August 2011,, J.L.
CASAS ESPINOLA, T.V. TORCHYNSKA, M. OJEDA , México ,
2011 ; PHOTOLUMINESCENCE TRANSFORMATION OF CORE-SHELL CDSE/ZNS QUANTUM DOTS
AT THE CONJUGATION TO BIOMOLECUES, Extranjero, , XX International Material Research
Congress, IMRCXX, Can Cun, Mexico, August 13-19, 2011,, T.V. TORCHYNSKA, I.CH. BALLARDO,
RODRIGUEZ , México ,
2011 ; PL SPECTRA MODIFICATION AT THE ANNEALING OF INAS/ ALGAAS QDS, Extranjero,
International Material Research Congress, IMRCXX, Can Cun, Mexico, August 2011,, J.L. CASAS
ESPINOLA, T.V. TORCHYNSKA, L.D. CRUZ , México ,
2011 ; RAMAN SCATTERING OF CDSE/ZNS QUANTUM DOTS BIOCONJUGATED WITH
OSTEOPONTIN ANTIBODY, Extranjero, The Seventh Internationa Conference on Low Dimensional
Structures and Devices, Telchac, Nuevo Yucatan, Mexico, 22-27 May 2011,, A.I. DIAZ CANO, I. CH.
CALLARDO RODRIGUEZ, T.V. , México ,
2011 ; RAMAN SPECTRA OF CDSE/ZNS QUANTUM DOTS BIOCONJUGATED TO OC125
ANTIBODIES, Extranjero, 16th Semiconducting and Isolating Material Conference, SIMC XVI, June
19-23, KTH, Stockholm, Sweden, A.L. QUINTOS VAZQUEZ, L.G. VEGA MACOTELA, L. SHCHE ,
Suecia ,
2011 ; RAMAN SPECTRA OF CDSE/ZNS QUANTUM DOTS BIOCONJUGATED TO OVARIAN CANCER
ANTIBODIES,, Extranjero, International Material Research Congress, IMRCXX, Can Cun, Mexico,
August 2011,, T.V. TORCHYNSKA, A.L. QUINTOS VAZQUEZ, L. SHCHE , México ,
2011 ; RAMAN SPECTRUM MODIFICATION OF CDSE/ZNS QUANTUM DOTS AT THE BIO-
CONJUGATION TO IGG ANTIBODIES,, Extranjero, XX International Material Research Congress,
IMRCXX, Can Cun, Mexico, August 13-19, 2011,, J. DOUDA, C.R. GONZALEZ VARGAS, A. DIAZ
CANO, , México ,
2011 ; SI AND GE QUANTUM DOTS AND DIFFERENT ASPECTS OF APPLICATIONS,, Extranjero,
International Material Research Congress, IMRCXX, Can Cun, Mexico, August 2011, T.V.
TORCHYNSKA, , México ,
2011 ; SI QUANTUM DOTS AND DIFFERENT ASPECTS OF APPLICATIONS, Extranjero, SPIE, 2011
Optics and Photonics, Nanophotonics materials VIII, 21-25 August, 2011, San-Diego, USA,, T.V.
TORCHYNSKA , Estados Unidos ,
2011 ; TRANSFORMATION OF PHOTOLUMINESCENCE AND RAMAN SCATTERING SPECTRA AT
THE CONJUGATION OF CDSE/ZNS QUANTUM DOTS TO ANTIBODIES, Extranjero, The Seventh
Internationa Conference on Low Dimensional Structures and Devices, Telchac, Nuevo Yucatan, Mexico,
22-27 May 2011,, J.L. CASAS ESPINOLA, T.V. TORCHYNSKA, G. POLUPAN , México ,
2011 ; TRANSFORMATION OF RAMAN SCATTERING SPECTRA AT THE CONJUGATION OF
CDSE/ZNS QUANTUM DOTS TO IL-10 ANTIBODIES,, Extranjero, XXInternational Material
Research Congress, IMRCXX, Can Cun, Mexico, August 2011,, A.I. DIAZ CANO, J. DOUDA, O.S.
LOPEZ DE LA LUZ, , México ,
2011 ; X RAY DIFFRACTION AND ELASTIC STRESS IN ASYMMETRIC INAS QUANTUM DOT
STRUCTURES,, Extranjero, The Seventh Internationa Conference on Low Dimensional Structures and
Devices, Telchac, Nuevo Yucatan, Mexico, 22-27 May 2011,, J.L. CASAS ESPINOLA, T.V.
TORCHYNSKA, G. GOMEZ , México ,
2010 ; , EMISSION EFFICIENCY OF CRYSTALLINE AND AMORPHOUS SI NANOCLUSTERS,,
Extranjero, International Semiconductor Conference,CAS 2010, Sinaia, Romania,, T.V. TORCHYNSKA ,
Rumanía ,
2010 ; DISPERSION OF PHOTOLUMINESCENCE PEAK POSITIONS EN INAS QD ASYMMETRIC
MULTI QUANTUM WELL STRUCTURES,, Extranjero, 10th International Workshop ¿Beam injection
Assessmant of Microstructures in Semiconductors, BIAM 2010,, J. L. CASAS ESPÍNOLA, T. V.
TORCHYNSKA, G. POLUPAN , Estados Unidos ,
2010 ; ELASTIC STRESS AND EMISSION NONHOMOGENEITY IN INAS QUANTUM DOT DWELL
STRUCTURES, Extranjero, 10th International Workshop ¿Beam injection Assessmant of
Microstructures in Semiconductors, BIAM 2010, Halle,Germany, J.L. CASAS ESPINOLA,T V
TORCHYNSKA,J PALACIOS GOME , Austria ,
2010 ; ELASTIC STRESS AND EMISSION NONHOMOGENEITY IN SYMMETRIC INAS QUANTUM
DOT-IN-A-WELL STRUCTURES, Extranjero, XVIII Material Research Congress, Can Cun , Mexico,
August 15-20,2010., T.V. TORCHYNSKA, G GÓMEZ GASGA, E. VELAZQUEZ , México ,
2010 ; ENERGY SPECTRA OF A PARTICLE CONFINED IN A PYRAMID WELL,, Extranjero, X
International Conference on Nanostructures materials, Roma, Italy, September 13-17, 2010,,
YU.VOROVEV, V.R VIEIRA,.RIBEIRO,PM.T.V.TORCHYNSKA YU.VOROVEV, V.R
VIEIRA,.RIBEIRO,T.V.TORCHYNSKA YU.VOROVEV, V.R VIEIRA,.RIBEIRO,T.V.TORCHYNSKA ,
Italia ,
2010 ; EXCITON EMISSION STIMULATION AND EXCITON POLARITON COUPLING IN SIC
NANOCRYSTALS., Extranjero, XVIII Material Research Congress, Can Cun , Mexico, August 15-
20,2010., T. V. TORCHYNSKA, A.I. DIAZ CANO , México ,
2010 ; MODIFICATION OF OPTICAL PROPERTIES AT BIOCONJUGATION OF CORE-SHELL
CDSE/ZNS QUANTUM DOTS,, Extranjero, Quantum dots 2010, Nottingen, England, April26-30,2010.,
T V TORCHYNSKA, A L QUINTOS VAZQUEZ, R PEÑA SIERR , Reino Unido ,
2010 ; POTENTIAL BARRIER STUDY AT INGAAS/INAS QUANTUM DOT INTERFACE IN
ASYMMETRIC MULTI QUANTUM WELL STRUCTURES., Extranjero, XVIII Material Research
Congress, Can Cun , Mexico, August 15-20,2010, J. L.CASAS ESPÍNOLA, T.V.TORCHYNSKA AND G.
POLUPAN , México ,
2010 ; RADIATIVE INTERFACE STATE MODIFICATION IN CDSE/ZNS QUANTUM DOTS COVERED
BY POLYMER, Extranjero, XVIII Material Research Congress, Can Cun , Mexico, August 15-20,2010,
T.V. TORCHYNSKA, J. DOUDA, LEO MACOTELA, R. PENA , México ,
2010 ; RAMAN SPECTRA OF BIOCONJUGATED CDSE/ZNS QUANTUM DOTS,, Extranjero, XVIII
Material Research Congress, Can Cun , Mexico, August 15-20,2010., T. V. TORCHYNSKA,
A.L.QUINTOS VÁZQUEZ, R. PEÑA , México ,
2010 ; SEMICONDUCTOR QUANTUM DOTS WITH INTERACE STATE IN BIOLOGY AND MEDICINE,,
Extranjero, X International Conference on Nanostructures materials, Roma, Italy, September 13-17,
2010,, T.V.TORCHYNSKA T.V.TORCHYNSKA , Italia ,
2010 ; SOME REASONS OF EMISSION VARIATION IN INAS QUANTUM DOT-IN-A-WELL
STRUCTURES, Extranjero, Quantum dots, 2010, Nottingen, England, April 26-30, 2010, T V
TORCHYNSKA, J PALACIOS GOMEZ, G GÓMEZ GASGA, A , Reino Unido ,
2010 ; T V. TORCHYNSKA, Y. V. VOROBIEV AND L. V. SHCHERBYNA, EMISSION RELATED
EMISSION RELATED TO EXCITON-POLARITON COUPLING IN SIC NANOCRYSTALS,,
Extranjero, Porous Semiconductors. Science and Technology, Valencia, 14-19 March, 2010,, T V.
TORCHYNSKA, Y. V. VOROBIEV , L. V. SHCHERBYNA , España ,
2009 ; BIOCONJUGATION AND MODIFICATION OF RAMAN SPECTRA OF CDSE/ZNS QUANTUM
DOTS,, Extranjero, Nano and Giga challengers in Electronics, Photonics and Renewable Energy,
Hamilton, Ontario, Canada, 10-14 August, 2009., T. V TORCHYNSKA, A.I. DIAZ CANO, YU.
VOROBIEV, , Canadá ,
2009 ; EMISSION RELATED TO EXCITON-POLARITON COUPLING IN SIC NANOCRYSTALS,,
Extranjero, 23-th International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS
23, Science and Technology the Netherlands, August 23-28, 2009., T.V. TORCHYNSKA, , Países Bajos ,
2009 ; EVALUATION OF INAS QD LASER STRUCTURE PARAMETERS,, Extranjero, VII Congreso
Internacional en Innovacion y Desarrollo Technologico, 7-9 October, 2009, Cuarnavaca, Morelos,
Mexico, T.V. TORCHYNSKA, J.L.CASAS ESPINOLA, G. POLUPAN , México ,
2009 ; EXCITON POLARITON EFFECTS IN SIC NANOCRYSTALS, Extranjero, First International
Conference on Nanostructures Materials and Nanocomposites (ICNM-2009), T. TORCHYNSKA , India ,
2009 ; IN/GA INTERMIXTURE IN INAS QD ASYMMETRIC DWELL STRUCTURES,, Extranjero, Nano
and Giga challengers in Electronics, Photonics and Renewable Energy, Hamilton, Ontario, Canada, 10-
14 August, 2009., J. L. CASAS ESPÍNOLA, T. V. TORCHYNSKA AND G. POLU , Canadá ,
2009 ; NUMERICAL ANALYSIS OF THE PERFOMENCE OF P-I-N DIODES MICROWAVE SWITCHES
BASED ON DIFFERENT MATERIALS,, Extranjero, XVIII International Material Research Congress,
IMRC 2009, Symposium 4, August 16-21, Can Cun, Qroo, Mexico, L.A. ITURRI HINOJOSA, L.M.
RESENDIZ , T.TORCHYNSKA , México ,
2009 ; OPTICAL AND STRUCTURAL INVESTIGATION OF SI NANOCLUSTERS IN AMORPHOUS
HYDROGENATED SILICON,, Extranjero, ICSI-6 Conference, May 17-22, 2009, Los Angeles, USA,, T.
V. TORCHYNSKA, AND YE.S. SHCHERBYNA , Estados Unidos ,
2009 ; PHOTOLUMINESCENCE AND INAS QD LASER STRUCTURE PARAMETERS,, Extranjero, XVIII
International Material Research Congress, IMRC 2009, Symposium 13, August 16-21, Can Cun, Qroo,
Mexico., T.V. TORCHYNSKA, J.L.CASAS ESPINOLA , México ,
2009 ; PHOTOLUMINESCENCE INHOMOGENEITY STUDY IN INAS DWELL STRUCTURES., Nacional,
IEEE Conference ROC&C-2009, Acapulco, 29 Nov.-5 Dic.,2009, T. V. TORCHYNSKA, G. POLUPAN ,
México ,
2009 ; PHOTOLUMINESCENCE SPECTRA OF BIO-COMJUGATED CDSE/ZNS QUANTUM DOTS,,
Extranjero, XVIII International Material Research Congress, IMRC 2009, Symposium 1, August 16-21,
Can Cun, Qroo, Mexico., T.V. TORCHYNSKA, A. L. QUINTOS VAZQUEZ, R. PENA , México ,
2009 ; PHOTOLUMINESCENCE STUDY AND THE EVALUATION OF DWELL STRUCTURE
PARAMETERS,, Extranjero, VIII Int. Conf. on Microthechnology and Thermal problems in Electronics,
MICROTHERM 2009, June 28-July 1, 2009, Lodz, Poland, p.57-61., T. V. TORCHYNSKA, A. VIVAS
HERNANDEZ, G. POLUPAN , Polonia ,
2009 ; PHOTOLUMINESCENCE STUDY AND THE EVALUATION OF DWELL STRUCTURE
PARAMETERS,, Extranjero, VIII Int. Conf. on Microthechnology and Thermal problems in Electronics,
MICROTHERM 2009, June 28-July 1, 2009, Lodz, Poland., T. V. TORCHYNSKA , México ,
2009 ; PHOTOLUMINESCENCE STUDY AND THE EVALUATION OF INAS DWELL STRUCTURE
PARAMETERS,, Extranjero, XVIII International Material Research Congress, IMRC 2009, Symposium
4, August 16-21, Can Cun, Qroo, Mexico., T.V. TORCHYNSKA, A. VIVAS HERNANDEZ, I. J. GUER ,
México ,
2009 ; PHOTOLUMINESCENCE TEMPERATURE ANALYSIS IN SIC NANOCRYSTALS,, Extranjero, VIII
Int. Conf. on Microthechnology and Thermal problems in Electronics, MICROTHERM 2009, June 28-
July 1, 2009, Lodz, Poland, p.137-144., T. V. TORCHYNSKA, J.A. YESCAS HERNANDEZ, YE. SHCHE ,
Polonia ,
2009 ; SURFACE MODIFICATION STUDY IN STAINLESS STEEL IRRADIATED WITH 3.66 MEV NI
IONS, Extranjero, International Conference on Surfaces Materials and Vacuum 2009, San Luis Potosi,
September 21-27, 2009., U.S. PACHECO Y ALCALA, T.V. TORCHYNSKA , México ,
2009 ; SURFACE PHONONS AND EXCITON-POLARITON COUPLING IN SIC NANOCRYSTALS,,
Extranjero, ICSI-6 Conference, May 17-22, 2009, Los Angeles, USA,, T. TORCHYNSKA Y G. POLUPAN
, Estados Unidos ,
2009 ; TRANSFORMATION OF PHOTOLUMINESCENCE SPECTRA IN BIO-CONJUGATED CORE-
SHELL CDSE/ZNS QUANTUM DOTS, Extranjero, 23-th International Conference on Amorphous and
Nanocrystalline Semiconductors, ICANS 23, Science and Technology the Netherlands, August 23-28,
2009., T.V. TORCHYNSKA, R. PENA-SIERRA, S. OSTAPENKO, , Países Bajos ,
2009 ; VARIATION OF RAMAN SPECTRA OF CDSE/ZNS QUANTUM DOTS AT THE BIO-
CONJUGATOION, Extranjero, 23-th International Conference on Amorphous and Nanocrystalline
Semiconductors, ICANS 23, Science and Technology the Netherlands, August 23-28, 2009., T.V.
TORCHYNSKA, L.G. VEGA-MACOTELA, J. DOUDA, , Países Bajos ,
2008 ; ANALYSIS OF RAMAN SCATTERING IN CORE SHELL CDSE/ZNS QUANTUM DOTS
CONJUGATED TO BIO MOLECULES, Extranjero, 9th International Workshop on Beam Injectio
Assesment of Microstructure in Semiconductors, Toledo, Spain, 29June-3July 2008,, T. V.
TORCHYNSKA, S. OSTAPENKO, C. PHELAN, A. Z , España ,
2008 ; Emission of Si nanoclusters of different phases in amorphous hydrogenated silicon,, Extranjero, 9th
International Workshop on Beam Injectio Assesment of Microstructure in Semiconductors, Toledo,
Spain, 29June-3July 2008, T. V. TORCHYNSKA, , España ,
2008 ; Excton related photoluminescence stimulation in SiC nanocrysallites, Extranjero, 9th International
Workshop on Beam Injectio Assesment of Microstructure in Semiconductors, Toledo, Spain, 29June-
3July 2008, T.V.TORCHYNSKA, J. A. YESCS HERNANDE, G. POLUPAN, , España ,
2008 ; Multiexcited state study in InAs DWELL structures,, Extranjero, 9th Expert Evaluation &Control of
Compound Semiconductor Materials & Technologies, EXMATEC 2008, Lodz, Poland, June 2-6, 2008,
G. P. POLUPAN, J.L.CASAS ESPINOLA , Polonia ,
2008 ; Photoluminescence and Raman scattering in core-shell CdSe/ZnS bioconjugated quantum, Extranjero,
9th Expert Evaluation &Control of Compound Semiconductor Materials & Technologies, EXMATEC
2008, Lodz, Poland, June 2-6, 2008,, T. V. TORCHYNSKA, R. PENA SIERA , Polonia ,
2008 ; Photoluminescence and X-ray diffraction study of porous SiC, Nacional, 28th Annual Meeting
International Conference on Materials, Surfaces and Vacuum, 29 September-3 Octubre, 2008,Veracruz,
Mexico, T.V. TORCHYNSKA, J.A. YESCAS , M. MORALES RODRIGUE , México ,
2008 ; Photoluminescence mapping of InAS/InGaAs Quantum dot structures, Extranjero, 9th International
Workshop on Beam Injectio Assesment of Microstructure in Semiconductors, Toledo, Spain, 29June-
3July 2008, S. OSTAPENKO, T.V. TORCHYNSKA, E. VELAZQUEZ LOZ , España ,
2008 ; Photoluminescence of bioconjugated core Shell CdSe/ZnS quantum dots,, Extranjero, International
Conference on Nanoscience and Technology, Keystone, Colorado, USA, July 20-25, 2008,, T.V.
TORCHYSKA, R. TREVILLA MONJE, J. DOUDA, P.A. , Estados Unidos ,
2008 ; Photoluminescence of core/shell CdSe/Zns quantum dots of different sizes, Inter. Conference on Optical,
Extranjero, Optoelectronic and Photonic Materials and Applications, ICOOPMA08, Alberta, Canada,
July 20-24, 2008., T. V. TORCHYNSKA, R. TREVILLA MONJE, J. DOUDA, , Canadá ,
2008 ; Photoluminescence of Si nanoclusters in amorphous hydrogenated silicon,, Extranjero, 2008 MRS
Meeting, Symposium A, 24-27 March, 2008, San Francisco, USA, T. V. TORCHYNSKA, , Estados
Unidos ,
2008 ; Photoluminescence Variation in DWELL structures with different InAs QD density,, Extranjero,
International Conference on Nanoscience and Technology, Keystone, Colorado, USA, July 20-25, 2008,
J.L. CASAS ESPINOLA, T.V. TORCHYNSKA, E. VELAZQUEZ , Estados Unidos ,
2008 ; Porous SiC for GaN based electronics, Nacional, 19 Reunion de otono de comunicaciones, computación,
electrónica y exposición industrial, ROC&C 2008, 30 Noviembre -6 Dicembre 2008, Acapulco, Mexico.,
T.V.TORCHYNSKA, G. POLUPAN , México ,
2008 ; Raman scattering analysis of poros SiC layers, Extranjero, 9th Expert Evaluation &Control of
Compound Semiconductor Materials & Technologies, EXMATEC 2008, Lodz, Poland, June 2-6, 2008,,
T. V. TORCHYNSKA, A. DIAZ CANO, , Polonia ,
2008 ; Some aspects of exciton thermal exchange in InAs QD DWELL laser structures,, Extranjero, Joint
Conferences on Interaction Among Nanostructures, February 3-7, 2008, Orlando, Florida, USA.,
T.V.TORCHYNSKA , Estados Unidos ,
2008 ; X ray diffraction and EPR study of porous 6H-SiC,, Extranjero, International Conference on
Nanoscience and Technology, Keystone, Colorado, USA, July 20-25, 2008, T. V. TORCHYNSKA, V.
BRATUS, J. PALACIOS GOMEZ , Estados Unidos ,
2007 ; Correlation between the photoluminescence and different types of Si nanoclusters in amorphous silicon,
Extranjero, silicon22nd International Conference on Amorphous and Nanocrystalline Semiconductors,
Breckenridge, Colorado, August 19-24, 2007, T. V. TORCHYNSKA, A. L. QUINTOS VAZQUEZ, ,
Estados Unidos ,
2007 ; Localization of defects in InAs QD asymmetric InGaAs/GaAs Dwell structures,, Extranjero, 24th
International Conference on Defects in Semiconductors, Albuquerque, NM, July 22, J. L. CASAS
ESPINOLA, T. V. TORCHYNSKA, , Estados Unidos ,
2007 ; Luminescence defect study in SiC nano-crystallites,, Extranjero, 4th International Conference on Defects
in Semiconductors, Albuquerque, NM, July 22-27, 2007, p.265., A. I. DIAZ CANO, T. V. TORCHYNSKA
, Estados Unidos ,
2007 ; Optical and structural properties of SiC nanocrystalls,, Extranjero, XIV-th Semiconducting and
Insulating Materials Conference, SIMC XIV, May 15-20, 2007, Fayetteville, AR, USA., A. DIAZ CANO,
T. V. TORCHYNSKA , Estados Unidos ,
2007 ; Raman scattering study in bio-conjugated core-shell CdSe/ZnS quantum dots,, Extranjero, 22nd
International Conference on Amorphous and Nanocrystalline Semiconductors, Breckenridge, Colorado,
August 19-24, 2007, T. V. TORCHYNSKA, J. DOUDA, S. S. OSTAPENKO, S. , Estados Unidos ,
2007 ; Role of ballistic transport in photoluminescence excitation of Si nanocrystallites,, Extranjero, 6-th
International Conference on Low dimensional Structures and Devices, LDSD 2007, San Andres,
Colombia, 15-20 April 2007,, T. V. TORCHYNSKA, F. G. BECERRIL ESPINOZA, , Colombia ,
2007 ; Role of ballistic transport in photoluminescence excitation of Si nanocrystals,, Extranjero, 22nd
International Conference on Amorphous and Nanocrystalline Semiconductors, Breckenridge, Colorado,
August 19-24, 2007, p. ThO15.11, T. V. TORCHYNSKA, , Estados Unidos ,
2007 ; Size dependent photoluminescence of SiC nanocrystals,, Extranjero, 22nd International Conference on
Amorphous and Nanocrystalline Semiconductors, Breckenridge, Colorado, August 19-24, 2007, M.
MORALEZ RODRIGUEZ, A. I. DIAZ CANO, , Estados Unidos ,
2006 ; Ballistic effect and optical properties of Si nanocrystallites (invited), Extranjero, Intern. Conf. on
Superlattice, Nanostructures and Nanodevices, ICSNN 2006, 30July-4August, 2006, Istanbul,, T. V.
TORCHYNSKA , Turquía ,
2006 ; Ballistic effect and photoluminescence of Si nanocrystallites, Extranjero, XV International Material
Research Congress, 20-24 August 2006, Can Cun,, T.V. TORCHYNSKA (INVITED TALK), , México ,
2006 ; Ballistic transport and PL of big size Si nanocrystals, Extranjero, International Conference on
Nanoscience and Technology, NANO9, T. TORCHYNSKA , Suazilandia ,
2006 ; dynamics in InAs quantum dots embedded in InGaAs/GaAs quantum wel, Extranjero, Internacional
Workshop NANOMAT 2006, Natalia/Turkey, T. V. TORCHYNSKA, J. L. CASAS ESPINOLA, , Turquía
,
2006 ; Dynamics of excitons in InAs quantum dots in a well InGaAs/GaAs structures, Extranjero, XV
International Material Research Congress, 20-24 August 2006, Can Cun,, J. L. CASAS ESPINOLA, T. V.
TORCHYNSKA, , México ,
2006 ; Optical and structural evaluation of SiC Nanocrystallites, Extranjero, International Conference on
Nanoscience and Technology, NANO9, A. DIAZ CANO, T. TORCHYNSKA , Suazilandia ,
2006 ; Photoluminescence and Structural investigation of Si nanocrystals embedded in amorphous silicon,,
Extranjero, International Conference on Nanoscience and Technology, NANO9, T. TORCHYNSKA, A.
VIVAS HERNANDEZ, A. L. QUINTOS V , Suazilandia ,
2006 ; Photoluminescence energy trend for ground and excited state in INAs quantum dots in a well
InGaAs/GaAs structures, Extranjero, Intern. Conf. on Superlattice, Nanostructures and Nanodevices,
ICSNN 2006,, E. VELAZQUEZ LOZADA, T. V. TORCHYNSKA, , Turquía ,
2006 ; Photoluminescence of big size Si Nanocrysltallites, Nacional, Mexican Workshop on Nanostructures
Materiasl, Puebla,, T. TORCHYNSKA , México ,
2006 ; Preparation and investigation of SiC poeous sub-microstructures on the substrate layer of Si nanowires,
Extranjero, , International Conference on Nanoscience and Technology, NANO9,, A. DIAZ CANO, T.
TORCHYNSKA, S. SADDOW , Suazilandia ,
2006 ; Raman study of bio-conjugated CdSe/ZnS core-shell quantum dots, Extranjero, 14th Int. Symp.
Nanostructures: Physics and Technology¿,, T. V. TORCHYNSKA , Federación Rusia ,
2006 ; Thermal escape of excitons localized at multi excited states in InAs QDs embedded in symmetric
InGaAs/GaAs quantum wells, Extranjero, International Conference on Nanoscience and Technology,
NANO9,, J. L. CASAS ESPINOLA, T. TORCHYNSKA, , Suazilandia ,
2005 ; Multi excited state photoluminescence mapping on InAS.InGaAS quantum dot structures,, Extranjero,
13th Int. Symp. Nanostructures: Physics and Technology¿,, T.V. TORCHYNSKA , Federación Rusia ,
2005 ; Nanocrystallite and defect related photoluminescence in Si-SiOx systems,, Extranjero, 13th International
Congress on Thin Films, 8th International Conference on Atomixally Controlled Sueface, Interfaces and
Nanostructures, ICTF13/ACSIN8, F. BECERRIL ESPINOZA, T.TORCHYNSKA, Y. GOLDSTEIN ,
Suecia ,
2005 ; Optical and structural investigation on porous SiC layers, Extranjero, IInternational Workshop on
Semiconductor Nanocrystallites, SEMINANO2005,, T.V. TORCHYNSKA, A. DIAZ CANO, M. DYBIEC ,
Hungría ,
2005 ; Optical investigation of Si nanocrystallites and quantum dots embedded in different types of matrices,
Extranjero, 12-th Latin American Congress of Surface Science and its Applications, CLACSA-12, Rio de
Janeiro, Brazil, T. V.TORCHYNSKA , Brasil ,
2005 ; Optical properties of Si nanocrystals in amorphous silicon matrix,, Extranjero, First Int. Conference on
Advances in Optical Materials, Tucson, Arizona, USA, T.V.TORCHYNSKA, A. VIVAS HERNANDEZ,
YASUHIRO , Estados Unidos ,
2005 ; Photoluminescence and structure investigations of Si nano-crystals in amorphous silicon matrix,
Extranjero, 21st Intern. Conference on Amorphous and nanocrystalline Semiconductors, Lisbon,
Portugal,, T. V. TORCHYNSKA, A.VIVAS HERNANDEZ, YASUHIRO , Portugal ,
2005 ; Photoluminescence mapping on InAs-InGaAs quantum dot structures,, Extranjero, First Int. Conference
on Advances in Optical Materials, Tucson, Arizona, USA,, E. VELAZQUEZ LOZADA, T. V.
TORCHYNSKA, M. DYBIC , Estados Unidos ,
2005 ; Photoluminescence mechanisms in Si and Ge nanocrystallites embedded in different types of matrixes,,
Extranjero, International Workshop on Semiconductor Nanocrystallites, SEMINANO2005,, T. V.
TORCHYNSKA , Hungría ,
2005 ; Photoluminescence of Si and Ge nanocrytsallites, Extranjero, 23rd Intern. Conference on Defects in
Semiconductors, ICDS-23, Awaji Island, Japan, T. V. TORCHYNSKA , Japón ,
2005 ; Photoluminescence of Si nanocrystallites in different types of matrices, Extranjero, First Conference on
Advances in Optical Materials, Tucson, Arizona,, T. TORCHYNSKA , Estados Unidos ,
2005 ; Photoluminescence of Si or Ge nanocrystallites embedded in silicon oxide, Extranjero, 21st Intern.
Conference on Amorphous and nanocrystalline Semiconductors, Lisbon, Portugal,, T. V.
TORCHYNSKA, A. VIVAS HERNANDEZ, Y. GOLDSTEIN , Portugal ,
2005 ; Photoluminescence scanning on InAs/Ingaes quantum dot structures, Extranjero, 13th International
Congress on Thin Films, 8th International Conference on Atomixally Controlled Sueface, Interfaces and
Nanostructures, ICTF13/ACSIN8, T.V.TORCHYNSKA, E. VELAZQUEZ LOZADA, J. CASAS ESPI ,
Suecia ,
2005 ; Stimulation excitonic and visible defect related luminescence in porous SiC., Extranjero, 23rd Intern.
Conference on Defects in Semiconductors, ICDS-23, Awaji Island, Japan, T.V.TORCHYNSKA, A. DIAZ
CANO, M. MORALES RODR , Japón ,
2004 ; « Mechanisms of photoluminescence of Si or Ge nanocrystallites embedded in different matrixes,,
Nacional, XXIV Congreso Annual Sociedad Mexicano de Ciencia y Tecnologia de Superficies y
Materiales, SMCTSM A,C., Quintana Roo, 27 September 2004, T.V. TORCHYNSKA , México ,
2004 ; Change of light emission of Si wires during Si/SiOx interface formation, Extranjero, Spring American
MRS meeting, San-Francisco, USA, F.G.BESERRIL ESPINOZA, T. TORCHYNSKA , Estados Unidos ,
2004 ; Characterization of Macro- and Nanoporous silicon, Extranjero, 4-th Internacional Conference ¿Porous
Semiconductors. Science and Technology¿., L. KHOMENKOVA, T.V.TORCHYNSKA , España ,
2004 ; Defect related photoluminescence in Si-SiOx systems,, Extranjero, Inter. Conference on Superlattice,
Nano-structures and Nano-devices, Can Cun, Mexico, F.G.BESERRIL ESPINOZA, T. TORCHYNSKA ,
México ,
2004 ; Luminescence of Si-SiOx systems, Extranjero, Spring American MRS meeting, San-Francisco, USA,, T.
TORCHYNSKA, A.VIVAS HERNANDEZ , Estados Unidos ,
2004 ; Magnetic field effect on the visible photoluminescence of porous silicon,, Extranjero, 4-th Internacional
Conference ¿Porous Semiconductors. Science and Technology¿. Spin, Valencia,, T.V.TORCHYNSKA,
L.Y.KHOMENKOVA, V.N.ZAKHARCHE , España ,
2004 ; Mechanisms of photoluminescence of Si or Ge nanocrystallites embedded in different matrixes,,
Nacional, XXIV Congreso Annual Sociedad Mexicano de Ciencia y Tecnologia de Superficies y
Materiales, SMCTSM A,C., Quintana Roo, T.V. TORCHYNSKA (PLENARY TALK) , México ,
2004 ; Multiple excited states modification in InAs/InGaAs quantum dot structures at high excitation power,,
Extranjero, Intern., Confer.Low Dimentional devices and structures, LCDS2004,Can-Cun, Mexico,
T.V.TORCHYNSKA, H.M. ALFARO LOPEZ, , México ,
2004 ; Non-destractive structural evaluation of porous SiC layers, Extranjero, 4-th Internacional Conference
¿Porous Semiconductors. Science and Technology¿., T.V.TORCHYNSKA, M. MORALES RODRÍGUEZ,
A. VIVAS , España ,
2004 ; Optical properties of porous silicon surface,, Extranjero, Intern., Confer.Low Dimentional devices and
structures, LCDS2004, Can-Cun, Mexico, E. CHAMBON, E. FLORENTIN, T. TORCHYNSKA , México ,
2004 ; Photocurrent spectral response of porous silicon diodes,, Extranjero, 4-th Internacional Conference
¿Porous Semiconductors. Science and Technology¿. Spin, Valencia, 1, T.V.TORCHYNSKA, M.
MORALES RODRÍGUEZ, , España ,
2004 ; Photoluminescence and photocurrent of Schottky dioses base don silicon nanocrystallites., Extranjero,
Inter. Conference on Superlattice, Nano-structures and Nano-devices, Can Cun, Mexico,
T.V.TORCHYNSKA, A. VIVAS HERNANDEZ , México ,
2004 ; Photoluminescence and Raman spectroscopy on porous SiC, Extranjero, Intern., Confer.Low
Dimentional devices and structures, LCDS2004,Can-Cun, Mexico, T. V. TORCHYNSKA, A. DIAZ
CANO, S. JIMÉNEZ-SA , México ,
2004 ; Radiative chanel competition in silicon nanocrystallites, Extranjero, 4-th Internacional Conference
¿Porous Semiconductors. Science and Technology¿., L. KHOMENKOVA, N. KORSUNSKA,
T.TORCHYNSKA , España ,
2004 ; Shell model of semiconductor quantum dots, Extranjero, SPIE Congress, San Diego, T.V.TORCHYNSKA
, Estados Unidos ,
2004 ; Spectroscopic study of multiple excited states in InAs/InGaAs quantum dot structures, Extranjero,
International Conference of Nanometer-Scale Science and Technology, NANO-8, Venice, Italy,,
T.V.TORCHYNSKA, ALFARO LOPEZ H.M , Italia ,
2003 ; High Efficient Solar Cells for Space Applications,, Nacional, XXIII Conferencia Nacional, Huatulco,
Oaxaca, Mexico, T.V.TORCHYNSKA (INVITED TALK) , México ,
2003 ; Hot carrier ballistic transport and photoluminescence excitation in silicon nanocrystallites,, Extranjero,
ASTATPHYS-Mex-2003, Puetrto Valarte, Mexico, T. TORCHYNSKA (INVITED) , México ,
2003 ; Hot carriers and excitation of Si/SiOx interface defect photoluminescence in Si nanocrystallites,,
Extranjero, 22nd Inter. Conference of Defects in Semiconductors, Aaerhus, Denmark,,
T.V.TORCHYNSKA (INVITED) , Dinamarca ,
2003 ; Metastable defects in Si3N4 layers assessed by scanning photoluminescence,, Extranjero, 22nd Inter.
Conference of Defects in Semiconductors, Aaerhus, Denmark,, I.TARASOV, M. DYBIEC,
T.V.TORCHYNSKA , Dinamarca ,
2003 ; Multi shell photoluminescence from InAS/InGaAs quantum dots, Extranjero, SPIE, Congress, San Diego,
T.V.TORCHYNSKA, P. ELISEEV , Estados Unidos ,
2003 ; Scanning luminescence in full-size SiC wafers,, Extranjero, 2003 NSF Design Service and Manufacturing
Grantees and Research Conference, Birmingham, AL, USA, T.V.TORCHYNSKA, S.OSTAPENKO ,
Estados Unidos ,
2003 ; Scanning Photoluminescence of InAs quantum dot structures for optical fiber laser, Nacional, 7
Congresso Nacional Ingeneria Mecanica y Electrica del IPN, T.V.TORCHYNSKA, E.VELASQUEZ
LOZADA , México ,
2003 ; Spacially resolved photoluminescence and thermally stimulated luminescence of semi-insulated SiC
wafers¿,, Extranjero, American 2002 MRS Congress, S. OSTAPENKO, S. SADDOW, T. TORCHYNSKA ,
Estados Unidos ,
2003 ; Visible photoluminescence of Ge/SiOx systems,, Extranjero, 9th Int. Conference Electronic Spectroscopy
and structures, Uppsala.Sweden,, T.V.TORCHYNSKA, A.DIAZ CANO , Suecia ,
2003 ; XPS and USXES investigations of the Si/SiOx interface and oxide defect related photoluminescence in Si
nano/crystallites, Extranjero, 9th Int. Conference Electronic Spectroscopy and structures,
Uppsala.Sweden,, T.V.TORCHYNSKA, M.MORALES RODRIGES , Suecia ,
2002 ; Ballistic effect and new concept of Si wire photoluminescence, Nacional, 8-th IUMRS International
Conference on Electronic Materials IUMRS-ICEM2002, Xi¿án, China,, T.V.TORCHYNSKA (INVITED
TALK) , China ,
2002 ; Ballistic effect and photoluminescence excitation in Si wires,, Extranjero, 7-th Intern. Conference of
nanometer scale science and technology, NANO-7, T.V.TORCHYNSKA, M.MORALES RODRIGES ,
Suecia ,
2002 ; Ballistic transport and photoluminescence excitation in Si wires and dotes, Extranjero, International
Conference on Luminescence and Optical Spectroscopy of Condensed Matters (ICL¿02), Budapest,
Hungary., T.V.TORCHYNSKA, L.YU.KHOMENKOVA , Hungría ,
2002 ; Dependence of self-assembled InAs quantum dot photoluminescence on excitation light power,
Extranjero, 2-nd International Conference on Semiconductor Quantum Dots, QD2002, Tokyo, Japan,,
T.V.TORCHYNSKA, , Japón ,
2002 ; Excitation mechanism in porous silicon, Extranjero, 8-th IUMRS International Conference on Electronic
Materials IUMRS-ICEM2002, Xi¿án, China, T.V. TORCHYNSKA, M.MORALES RODRIGUEZ , China
,
2002 ; Formation of Si/SiOx interface, Extranjero, 4th International Conference on Low Dimensional Structures
and Devices, Fortaleza, Ceara-Brazil., M. MORALES RODRÍGUEZ, T. V. TORCHYNSKA , Brasil ,
2002 ; Formation of the Si/SiO interface and its Influence on the porous silicon photoluminescence, Extranjero,
3-rd Int. Conf. Porous semiconductors, Science and Technology, T.V.TORCHYNSKA,
V.A.YUKHIMCHUK, B.M.BULAKH , Suecia ,
2002 ; Hot carrier transport and photoluminescence in Si nano-crystallites, Extranjero, 2-nd International
Conference on Semiconductor Quantum Dots, QD2002, Tokyo, Japan,, T.V.TORCHYNSKA(INVITED
TALK) , Japón ,
2002 ; Investigacion de la respuesta espectral de la fotocorriente en estructuras de nanocristales del tipo Si
poroso, para su aplicacion en celdas solares para satelites de telecomunicaciones., Extranjero, 2 Congreso
Internacional de Ingeniria ElectroMecanica y de Sistemas,, A.VIVAS HERNANDEZ,
T.V.TORCHYNSKA , México ,
2002 ; Ionizacion termica de multiple estados de InAs, Nacional, XLV Congreso Nacional de Fisica, Poliforum
Leon, Mexico,, T.V.TORCHYNSKA, J.L.CASAS ESPINOLA , México ,
2002 ; Localized Excitons in InAs self-assembled Quantum Dots, Extranjero, 6-th International Workshop on
Expert Evaluation and Control of compound semiconductors materials and Exnologies, EXMATEC
2002, Budapest, Hungary, T.V.TORCHYNSKA (INVITED TALK) , Hungría ,
2002 ; Mechanism of photoluminescence of Ge dots in silicon oxide films,, Extranjero, XI International Material
Research Congress 2002, Can-Cun., T.V.TORCHYNSKA, J.AGUILAR HERNANDEZ , México ,
2002 ; Modification of porous silicon photoluminescence and its excitation during formation Si/SiOx interface,,
Extranjero, XI International Material Research Congress 2002, Can-Cun., T.V.TORCHYNSKA,
F.G.BECERRIL ESPINOZA, , México ,
2002 ; Multiple excited state emission and its thermal quenching in InAs/InGaAs QDs,, Nacional, 8 Conferencia
de Ingenieria Electrica de CINVESTAV, CIE 2002, T.V.TORCHYNSKA, J.L.CASAS ESPINOLA ,
México ,
2002 ; multiple excited states in InAs/InGaAs quantum dot, Extranjero, 4th International Conference on Low
Dimensional Structures and Devices, Fortaleza, Ceara-Brazil, T.V.TORCHYNSKA, J.L.CASAS
ESPINOLA , Brasil ,
2002 ; Nature of visible luminescence and its excitation in Si/SiO2 systems,, Extranjero, International
Conference on Luminescence and Optical Spectroscopy of Condensed Matters (ICL¿02), Budapest,
Hungary., T.V.TORCHYNSKA, V.YUKHIMCHUK , Hungría ,
2002 ; Optical and structural investigation of GeSiO2 systems,, Extranjero, 29th International Symposium on
Compound Semiconductors, ISCS, T.V.TORCHYNSKA (INVITED TALK) , Suazilandia ,
2002 ; Optical and structural studies of Si low-domensional wires and dots,, Extranjero, Spring American MRS
Meeting, 2002, San Francisco, USA, T.V.TORCHYNSKA, F.G.BECERRIL ESPINOZA , Estados Unidos ,
2002 ; Photoluminescence and its excitation mechanism in Si wires and dots, Extranjero, 3-rd Int. Conf. Porous
semiconductors, Science and Technology,, T.V.TORCHYNSKA, A.I.DIAZ CANO , España ,
2002 ; photoluminescence excitation in Si wires, Extranjero, 7-th Intern. Conference of nanometer scale science
and technology, NAO-7, Malmo, Sweden,, T.V.TORCHYNSKA, , Suecia ,
2002 ; Photoluminescence of Ge nano-crystallites, Extranjero, 4th International Conference on Low
Dimensional Structures and Devices, Fortaleza, Ceara-Brazil., T.V.TORCHYNSKA, A.KOLOBOV ,
Brasil ,
2002 ; Structural investigation of GeSiO2 systems,, Extranjero, 29th International Symposium on Compound
Semiconductors, ISCS 2002, Lausanne, Switzerland, T.V.TORCHYNSKA, J.AGUILAR HERNANDEZ, ,
Suazilandia ,
2002 ; Thermal ionization of excitons in InAs QDs embedded into InGaAs/GaAs MQW, Extranjero, 7-th Intern.
Conference of nanometer scale science and technology, NAO-7, Malmo, Sweden, T.V.TORCHYNSKA,
J.L.CASAS ESPINOLA , Suecia ,
2002 ; Thermal ionization of multiply excited states in InAs self-assembled quantum dots embedded into
InGaAs/GaAs MQW, Extranjero, 7-th Intern. Conference of nanometer scale science and technology,
NANO-7,, T.V.TORCHYNSKA , Suecia ,
2002 ; thermal quenching in InAs/InGaAs QDs,, Extranjero, XI International Material Research Congress 2002,
Can-Cun., T.V.TORCHYNSKA, J.L.CASAS ESPINOLA , México ,
2002 ; Thermal quenching of emission of self-assembled InAs quantum dots, Extranjero, 29th International
Symposium on Compound Semiconductors, ISCS 2002, Lausanne, Switzerland., T.V.TORCHYNSKA,
J.L.CASAS ESPINOLA , Suazilandia ,
2002 ; Thermal quenching of emission of self-assembled InAs quantum dots embedded in InGaAs WQW,,
Extranjero, 29th International Symposium on Compound Semiconductors, ISCS, T.V.TORCHYNSKA,
J.L.CASAS ESPINOLA , Suazilandia ,
2001 ; Celdas Solares basadas en estructuras de alambre de Si, Nacional, 6-sexto Congreso Nacional de
Ingeniria Electromecanica y de Sistemas,, T.V.TORCHYNSKA, A.VIVAS HERNANDEZ, A.HERNANDE
, México ,
2001 ; Defect Related Optical Properties of Si Wires and Dots., Extranjero, Inter.Conference. on Advanced
Materials ICAM 2001, Can-Cun, Mexico,, T.V.TORCHYNSKA, A.I.DIAZ CANO , México ,
2001 ; Defect related photoluminescence in Si wires, Extranjero, 367. 21-th International Conference on Defect
in Semiconductors, Giessen, Germany,, T.V.TORCHYNSKA, J.AGUILAR-HERNANDEZ , Alemania ,
2001 ; Estudio fotoluminiscencia de puntos cuanticos de InAs, Nacional, 3-r Congreso Nacional
¿Cristalografia¿, Hermosillo, Mexico,, T.V.TORCHYNSKA, J.L.CASAS ESPINOLA , México ,
2001 ; Estudios de XPS, Fotoluminescencia y su excitacion en alambres de silicio, Nacional, 3-r Congreso
Nacional ¿Cristalografia¿, Hermosillo, Mexico,, T.V.TORCHYNSKA, A.I.DIAZ CANO , México ,
2001 ; Estudios Opticos y de USXES en estructuras de Si de baja dimensionalidad dependientes de la
morfologia y composicion de oxido de solicio en la superficie de Si,, Nacional, 3-r Congreso Nacional
¿Cristalografia¿, Hermosillo, Mexico, T.V.TORCHYNSKA, M.MORALES RODRIGUEZ , México ,
2001 ; excitation in Si low-dimensional Structures, Extranjero, Inter.Conference. on Advanced Materials ICAM
2001, Can-Cun, Mexico, T.V.TORCHYNSKA, M.MORALES RODRIGUEZ , México ,
2001 ; Investigacion de los InAs puntos cuanticos insertados dentro de estructuras laser de InGaAs/GaAs para
fibra optica, Nacional, 6-sexto Congreso Nacional de Ingeniria Electromecanica y de Sistemas,
T.V.TORCHYNSKA, J.L.CASAS ESPINOLA , México ,
2001 ; Photoelectrical characteristics of the diodes based on Si wire Structures, Extranjero, Inter.Conference. on
Advanced Materials ICAM 2001, Can-Cun, Mexico,, T.V.TORCHYNSKA, A.VIVAS HERNANDEZ ,
México ,
2001 ; Photoluminescence of InAs Quantum Dots in InGaAs/GaAs Multi Quantum Wells,, Extranjero,
Inter.Conference. on Advanced Materials ICAM 2001, Can-Cun, Mexico, T.V.TORCHYNSKA,
J.L.CASAS, , México ,
2001 ; Role of Si/SiOx interface in light emission process, Extranjero, III International School-Conference
"Morden problems of semiconductor physics", Drogobuch, Ukraine,, T.V.TORCHYNSKA,
M.K.SHEINKMAN , Ucrania ,
2001 ; USXES, XPS and Optical phenomena in Si low-dimensional structures,, Extranjero, 13-th
Inter.Conference on Vacuum Ultraviolet Radiation Physics, Trieste, Italy,, T.V.TORCHYNSKA,
F.G.BECERRIL ESPINOZA , Italia ,
2000 ; APPLICATION OF IIIV MATERIAL SOLAR CELLS IN SPACE SOLAR ENERGETICS,, Extranjero,
CONFERENCE IN INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS, ACADEMY OF
SCIENCES OF THE CZECH REPUBLIC, PRAHA, CZECH REPUBLIC., T.V.TORCHYNSKA ,
Hungría ,
2000 ; Application of III-V material solar cells in space solar energetics, Nacional, III Workshop on
Optoelectronic Materials and Their applications (including solar cells), Oaxaca, Mexico.,
T.V.TORCHYNSKA (INVITED TALK) , México ,
2000 ; Comparative investigation of structure and photoluminescence of Si low-dimensional Systems,,
Extranjero, 8-th International Conference on the Electronic Spectroscopy and Structures, Berkeley,
USA., G.P.POLUPAN, T.V.TORCHYNSKA , Estados Unidos ,
2000 ; Complex nature of the red photoluminescence and peculiarities of it¿s excitation in porous silicon,
Extranjero, Gordon Research Conferences, July 9-14, 2000, New-London, N.H., USA., T. TORCHYNSKA
(INVITED) , Estados Unidos ,
2000 ; Complex nature of the red photoluminescence and peculiarities of it¿s excitation in porous silicon,,
Extranjero, Gordon Research Conferences, July 9-14, 2000, New-London, N.H., USA.,
T.V.TORCHYNSKA (INVITED TALK) , Estados Unidos ,
2000 ; Desarrollo de celdas solares para satelites de telecomunicaciones espaciales,, Nacional, 5 Quinto
Congreso Naciocal de Ingenieria Electromechanica y de sistemas,, A.VIVAS HERNÁNDEZ,
G.P.POLUPAN, T.V.TORCHYNSKA , México ,
2000 ; Esfuerzos elacticos en las estructuras de semiconductors multicapa, Nacional, 5 Quinto Congreso
Naciocal de Ingenieria Electromechanica y de sistemas,, T.V.TORCHYNSKA, F.CONDE
ZELOCUATECATL , México ,
2000 ; Estudios opticos y de morfologia de la superficie de sistemas de baja simensionalidad a base de silicio,
Nacional, XLIII Congreso Nacional de Fisica, del Puebla, Mexico., T.V.TORCHYNSKA, J.AGUILAR-
HERNANDEZ, F.G.BECERRIL , México ,
2000 ; FIVE LECTURES ON GENERAL ITEM OPTOELECTRONIC MATERIALS AND DEVICES OF
NEW GENERATION,, Extranjero, COLLEGE PREP, INSTITUTE INTERNATIONAL, SANDIEGO,
CA, USA., T.V.TORCHYNSKA , Estados Unidos ,
2000 ; Nature of red photoluminescence in porous silicon,, Extranjero, 3-rd International Conference on
Advanced Semiconductor Devices and Microsystems, ASDAM¿2000, T.V.TORCHYNSKA,
F.G.BACARRIL-ESPINOSA, L.I.KHOMENK , Eslovaquia ,
2000 ; OPTICAL AND STRUCTURAL STUDIES OF SILICON LOWDIMENSIONAL SYSTEMS WIRES
AND DOTS,, Extranjero, CONFERENCE INCENTER OF HIGH TECHNOLOGY MATERIALS AT
THE UNIVERSITY OF NEWMEXICO, ALBUQUERQUE, NEWMEXICO, USA.,
T.V.TORCHYNSKA, , Estados Unidos ,
2000 ; Optical and Structural Studies of silicon low-dimensional wires and dots,, Nacional, XLIII Congreso
Nacional de Fisica, del Puebla, Mexico, T.V. TORCHYNSKA (INVITADA) , México ,
2000 ; Optical and structure studies of silicon low-dimensional systems, Extranjero, 25-th International
Conference on Physics of Semiconductors,, T.V.TORCHYNSKA, J.AGUILAR-HERNANDEZ,
F.G.BECERRIL , Japón ,
2000 ; Optical and structure studies of silicon low-dimensional systems,, Extranjero, 25-th International
Conference on Physics of Semiconductors, Osaka, Japan., T.V.TORCHYNSKA, J.AGUILAR-
HERNANDEZ, F.G.BECERRIL , Japón ,
2000 ; Peculiarities of Raman Spectra from Porous Silicon, Extranjero, 3-Advanced Semiconductor Devices and
Microsystems, ASDAM¿2000, T.V.TORCHYNSKA, L.I.KHOMENKOVA, N.E.KORSUNSKA ,
Eslovaquia ,
2000 ; Photoluminescence and surface structure investigations of silicon low-dimensional systems,, Extranjero,
3-rd International Conference on Materials for Microelectronics, T.V.TORCHYNSKA, J.AGUILAR-
HERNANDEZ, F.G.BECERRIL , Irlanda ,
2000 ; Temperature effect on photoluminescence excitation process of porous silicon, Extranjero, International
Semiconductor Conf., CAS¿2000, T.V.TORCHYNSKA, L.I.KHOMENKOVA, N.E.KORSUNSKA ,
Rumanía ,
2000 ; The nature of photoluminescence excitation bands in porous silicon, Extranjero, International
Semiconductor Conf., CAS¿99, T.V.TORCHYNSKA, L.I.KHOMENKOVA, N.E.KORSUNSKA , Rumanía
,
1999 ; Application of III-V material solar cells in space solar energetics, Nacional, III Workshop on
Optoelectronic Materials and Their applications (including solar cells), August 28-September 1, 2000,
Oaxaca, Mexico, T.V.TORCHYNSKA, G.P.POLUPAN (INVITED TALK) , México ,
1999 ; Change of parameters of the Si IMPACT diodes under the influence of ( ¿- radiation¿,, Extranjero, Third
International Conference Interaction of Radiation with solids¿, Minsk, Belarus, October,,
L.V.SCHERBINA, T.V.TORCHYNSKA , Belarús (Bielorrusia) ,
1999 ; Change of parameters of the Si IMPACT diodes under the influence of ( ¿- radiation, Extranjero, Third
International Conference Interaction of Radiation with solids¿, L.V.SCHERBINA, T.V.TORCHYNSKA,
E.C.SCHERBINA, , Belarús (Bielorrusia) ,
1999 ; Comparative investigation of structure and photoluminescence of Si low-dimensional Systems,,
Extranjero, 8-th International Conference on the Electronic Spectroscopy and Structures, August 8-12,
2000, Berkeley, USA., G.P.POLUPAN, T.V.TORCHYNSKA, , Estados Unidos ,
1999 ; COMPLEX NATURE OF PHOTOLUMINESCENCE AND ITS EXCITATION IN POROUS SILICON
AND ITS EXCITATION, Extranjero, RAKAH INSTITUTE OF PHYSICS HEBREW UNIVERSITY OF
JERUSALEM, ISRAEL., T.V.TORCHYNSKA , Israel ,
1999 ; Crystallography of Semiconductors, Nacional, 2-nd Congreso Nacional de cristalografia, Ensenada, B.C.,
Mexico,, T.V.TORCHYNSKA (INVITED TALK) , México ,
1999 ; Electro and Photoluminescence spectra Transformation in GaP LED structures at the Creation of
Dislocation¿, Extranjero, 10-th International Workshop ¿Physics of Semiconductor Devices¿, Ed.
V.Kumar, S.K.Agarwal, Allied Publishers Ltd., New¿Delhi, INDIA,, T.V.TORCHYNSKA,
V.I.KOOSHNIRENKO , India ,
1999 ; H2O Related Emitting Centers in Interface Layer of Porous Silicon¿,, Extranjero, 20-th International
Conference Defects in Semiconductors¿, July, Berkely, CA,USA,, T.V.TORCHYNSKA,
L.I.KHOMENKOVA , Estados Unidos ,
1999 ; Influence of dislocation on excitonic and DA luminescence spectra in GaP epitaxial layers, Extranjero,
International Semiconductor Conf., CAS¿99, T.V.TORCHYNSKA, N.E.KORSUNSKAYA, , Rumanía ,
1999 ; Mechanism of Injection Enhanced Defect Transformation in LPE CaAs Structures, Extranjero, 20-th
International Conference ¿Defects in Semiconductors¿, July, Berkely, CA, USA,, T.V.TORCHYNSKA
(INVITED TALK) , Estados Unidos ,
1999 ; Nanostructure and Nanotechnology, Extranjero, ESFM INSTITUTE POLYTECHNIC NATIONAL,
MEXICO D.F., MEXICO., T.V.TORCHYNSKA , México ,
1999 ; Optoelectronics and Nanotechnology, Extranjero, ESFM INSTITUTE POLYTECHNIC NATIONAL,
MEXICO D.F., MEXICO., T. V. TORCHYNSKA , México ,
1999 ; Perspectiva de Aplicacion de los Materiales de Silicio y Elementos III-V Grupo en las Celdas Solares
Terrestre y Espacial, Extranjero, . 2-Congreso Internacional de Ingenieria Electromechanica y de
sistemas, T.V.TORCHYNSKA, G.P.POLUPAN, A.I.KABATSKAIA , México ,
1999 ; Perspective de Aplicaci¿n de los Materiales de Silicio y Elementos III y V Grupo en las Celdas Solares
Terrestre y Espacial, Extranjero, 2-th Congreso International de Ingenieria Electromechanica y de
sistemas, October, Mexico D.F.,1999, T.V.TORCHYNSKA, G.P.POLUPAN , México ,
1999 ; PERSPECTIVES FOR APPLICATION OF SI AND GAAS FOR DIRECT COMNVERTATION OF
SOLAR ENERGY,, Extranjero, NATIONAL TECHNICAL UNIVERSITY KPI, KIEV, UKRAINE,
T.V.TORCHYNSKA, , Ucrania ,
1999 ; Perspectives of III¿V Material Solar Cell Application in Space Solar Cell,, Extranjero, 10¿th
International Workshop on Physics of Semiconductor Devices, New¿Delhi, INDIA, 1999.,
T.V.TORCHYNSKA, (INVITED TALK) , India ,
1999 ; Perspectives of III-V Material Solar Cell Application in Space Solar Energetic, Extranjero, 10-th
International Workshop ¿Physics of Semiconductor Devices¿,, T.V.TORCHYNSKA, J.PALACIOS
GOMEZ, , India ,
1999 ; Porous silicon. Some aspects of photoluminescence and photoluminescence excitation,, Extranjero, IX
Latin American Congress on Surface Science and it¿s applications- CLACSA¿99¿, July, Habana, Cuba,,
T.V.TORCHYNSKA, J. PALACIOS GOMES , México ,
1999 ; Radiation and temperature induced parameter variation of Si and III-V Material Solar Cells for Space
Application, Extranjero, IEEE International Integrated Reliability Workshop 1999, Sranford, CA,USA,,
T.V.TORCHYNSKA, G.P.POLUPAN (INVITED TALK) , México ,
1999 ; Role of surface in porous silicon photoluminescence¿,, Nacional, Conf. Me6tropolitana de Microscopia
de Tunelaje Fuerza Atomica, Magnetica y Afines, March, 1999, Mexico D.F., T.V.TORCHYNSKA, A.
GARCIA BORGUEZ , México ,
1999 ; Suboxide-related center as the source of the intense Red luminescence of porous Si.¿,, Extranjero, 3-th
International Conference Low Dimensional Structures and Devices, September, Antalia,Turkey, 1999.,
T.V.TORCHYNSKA, N.E.KORSUNSKAYA , Turquía ,
1999 ; The nature of photoluminescence excitation bands in porous silicon, Extranjero, International
Semiconductor Conf., CAS¿99,, T.V.TORCHYNSKA, L.I.KHOMENKOVA, N.E.KORSUNSKA ,
Rumanía ,
1999 ; THREE ELEMENTARY BANDS OF POROUS SILICON RED PHOTOLUMINESCENCEAND
THEIR EXCITATION, Extranjero, INSTITUTE SEMICONDUCTOR PHYSICS NASU, KIEV,
UKRAINE., T.V.TORCHYNSKA , Ucrania ,
1999 ; Three types of Luminescent centres in porous silicon, Extranjero, 11-th Inter. Conf. On Thin Film,
August, Can Cun, Mexico, 1999,, T.V.TORCHYNSKA, J.AGUILAR HERNANDEZ , México ,
1999 ; 1980, APRIL T.V.TORCHYNSKA, PHOTOCHEMICAL REACTIONS IN IIVI
PHOTOELECTRONIC MATERIALS,, Extranjero, 10-th International Workshop ¿Physics of
Semiconductor Devices¿,, , India ,
1998 ; Adsorption assisted excitation of porous silicon photoluminescence, Extranjero, 1998 MRS American Fall
Meeting, Boston, USA,, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA , Estados Unidos ,
1998 ; CURRENT SITUATION FOR SPACE AND TERRESTRIAL SOLAR ENERGETIC,, Extranjero,
ESFM INSTITUTE POLYTECHNIC NATIONAL, MEXICO D.F., MEXICO, T.V.TORCHYNSKA ,
México ,
1998 ; Deep centers in AlGaAs epitaxiallayers hoghly doped with amphoteric impurities, Extranjero, 9 th-
CIMTEC -World Ceramics Congress & Forum on New Materials, Faenza, ITALY,,
T.V.TORCHINSKAYA, V.I. KOOSHNIRENKO , México ,
1998 ; Oxidation Process Effects on Porous Silicon Photoluminescence, Extranjero, International
Semiconductor Conf., CAS¿98, Sinai, ROMANIA,, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA ,
México ,
1998 ; Recombination - Enhanced Mikroprecipitate formation in LPE GaAs-structures¿, Extranjero, Inter.
Conference ¿Extended Defects in Semiconductors¿, Jaszowiec, POLAND,, T.V. TORCHINSKAYA
(INVITED TALK) , Polonia ,
1998 ; Role of oxidation process on porous silicon photoluminescence and its excitation¿,, Extranjero, I1998
MRS American Fall Meeting, Boston, USA, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA , Estados
Unidos ,
1998 ; ROLE OF OXIDATION PROCESS ON POROUS SILICONPHOTOLUMINESCENCE AND ITS
EXCITATION,, Extranjero, RACAH INSTITUTE OF PHYSICS , HEBREW UNIVERSITY,
JERUSALEM, ISRAEL., T.V.TORCHYNSKA, , Israel ,
1998 ; THE MECHANISM OF INJECTION ENHANCED LIGHTEMITTING DIODE DEGRADATION,
Extranjero, ESFM INSTITUTE POLYTECHNIC NATIONAL, MEXICO D.F., MEXICO.,
T.V.TORCHYNSKA, , México ,
1998 ; Three approaches to surface substance role investigation in porous silicon photoluminescence,
Extranjero, 9 th- CIMTEC -World Ceramics Congress & Forum on New Materials, Faenza, ITALY,,
T.V.TORCHINSKAYA, N.E.KORSUNSKAYA , Italia ,
1997 ; ABSORPTION ASSISTED EXCITATION OF POROUS SILICON PHOTOLUMINESCENCE,,
Extranjero, INSTITUTE OF PHYSICS, POLISH ACADEMY OF SCIENCES, WARSAW, POLAND., T.
V. TORCHYNSKA , Polonia ,
1997 ; Centers in AlGaAs Epitaxial layers Highly Doped with Germanium,, Extranjero, XI-th International
Conference on Ternary and Multinary Compounds ICTMC 11, Salford, UK,, T.V.TORCHINSKAYA,
V.I. KOOSHNIRENKO , Irlanda ,
1997 ; Comparison of Si and AlGaAs/GaAs solar cell perspectives, Nacional, Second International School-
Conference ¿Physical Problems in Material Science of Semiconductors¿, Chernivtsi, UKRAINE,
T.V.TORCHINSKAYA (INVITED TALK) , México ,
1997 ; Complex studies of porous silicon aging phenomena, Extranjero, International Semiconductor
Conference, CAS,97, Sinai, ROMANIA, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA , Rumanía ,
1997 ; Deep centers in AlGaAs Epitaxial layers Highly Doped with Germanium,, Extranjero, XXVI
International School of Physics of Semiconducting Compounds, Jaszowiec¿97, POLAND,
T.V.TORCHINSKAYA, V.I. KOOSHNIRENKO , Polonia ,
1997 ; Deep traps in AlGaAs:Ge layers, Extranjero, Ninth International Workshop ¿Physics of Semiconductor
Devices¿ , Delhi, INDIA, T.V.TORCHINSKAYA, V.I. KOOSHNIRENKO , India ,
1997 ; RECOMBINATION ENHANCED MIKROPRECIPITATE FORMATION IN LPE
GAASSTRUCTURES,, Extranjero, INSTITUTE OF PHYSICS, POLISH ACADEMY OF SCIENCES,
WARSAW, POLAND, 1998 , SEPTEMBER T.V. TORCHINSKAYA , Polonia ,
1997 ; Several ways of excitation and Degradation processes of porous silicon photoluminescence¿, Extranjero,
NATO Advanced Research Workshop ¿Heterostructure Epitaxy and Devices - HEAD, 97¿, Smolenice,
SLOVAKIA, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA , Eslovaquia ,
1997 ; Transformation of GaP Layer luminescence Spectra on Introduction of Dislocations,, Extranjero, NATO
Advanced Research Workshop ¿Heterostructure Epitaxy and Devices - HEAD, 97¿, Smolenice,
SLOVAKIA, T.V.TORCHINSKAYA (INVITED TALK) , México ,
1997 ; Two ways of porous Si photoluminescence excitation¿, Extranjero, Second International Conference
¿Low Dimensional Structures & Devices¿, Lisbon, PORTUGAL,, T.V.TORCHINSKAYA,
N.E.KORSUNSKAYA , Portugal ,
1996 ; BASIC PROCESSES OF IIIV LIGHTEMITTING DIODE BULK DEGRADATION,, Extranjero,
RESEARCH INSTITUTE FORTECHNICAL PHYSICS AND INSTITUTE OF MATERIAL
SCIENCES , HUNGARY ACADEMY OF SCIENCES, HUNGARY, 1996, DECEMBER
T.V.TORCHYNSKA, , Hungría ,
1996 ; Deep centers in MOCVD InGaAs photodiodes for optical fiber and its influence on diode paremeters,
Extranjero, International Conference ¿Physics and Industry¿, Golitsino, Moscow, RUSSIA, 1996.,
T.V.TORCHINSKAYA , Federación Rusia ,
1996 ; Electrical and optical properties of non-uniform semiconducting synthetic diamond, Extranjero, IEEE
SIMC - 9, Toulouse, FRANCE, 1996, T.V.TORCHINSKAYA, Y.V.VOROBIEV , Francia ,
1996 ; ELECTRONICALLY STIMLATED DEFECT TRANSFORMATION PROCESSES IN IIVI AND IIIV
MATERIALS,, Extranjero, INSTITUTE OF ADVANCED TECHNOLOGY, BARILAN UNIVERSITY,
RAMATGAN,ISRAEL., T.V.TORCHYNSKA, , Israel ,
1996 ; Excitation Mechanism of Porous Si Photoluminescence, Extranjero, International Conference ¿Advanced
Semiconductor Devices and Microsystems- ASDAM¿96¿, Smolenice, SLOVAKIYA,,
T.V.TORCHINSKAYA, N.E.KORSUNSKAYA, L.YU. KHOMENKOV , Eslovaquia ,
1996 ; Optical and field memory effects in semiconducting diamond, Extranjero, International Conference
¿Advanced Semiconductor Devices and Microsystems- ASDAM¿96¿, Smolenice, SLOVAKIYA,
T.V.TORCHINSKAYA, Y.V.VOROBIEV , Eslovaquia ,
1996 ; Photoluminescence and EPR studies of Porous Silicon, Extranjero, International Conference on
Luminescence and Optical Spectroscopy of Condensed Matter, Prague, CZECH REPUBLIC,
T.V.TORCHINSKAYA, N.E.KORSUNSKAYA, L.YU. KHOMENKOV , República Checa ,
1995 ; BASIC MECHANISM OF INJECTION ENHANCED LIGHTEMITTING DIODE DEGRADATION,,
Extranjero, GROUPIE DE PHYSIQUE DES SOLIDES, UNIVERSITIES PARIS 67 , PARIS,FRANCE,
T.V.TORCHYNSKA , Francia ,
1995 ; Characterization of deep level defects in MOCVD InGaAs layers, Extranjero, SPIE¿s 40th Annual
Meeting Optical Science, Engineering and Instrumentation, San-Diego, California, USA,,
T.V.TORCHINSKAYA , Estados Unidos ,
1995 ; Germanium Related Deep Centers in AlGaAs Epitaxial Layers¿, Extranjero, 1995 MRS Spring Meeting,
San- Francisco, USA, T.TORCHYNSKA , Estados Unidos ,
1995 ; Germanium related deep centers in AlGaAs epitaxial layers¿,, Extranjero, Third IUMRS International
Conference in Asia (IUMRS-ICA-'95), Seoul, SOUTH KOREA,, T.V.TORCHINSKAYA,
V.I.KOOSHNIRENKO , República Corea ,
1995 ; Influence of surface on porous Si photoluminescence and its excitation spectra¿,, Extranjero, 1995 MRS
Spring Meeting, San-Francisco, USA, B.M.BULAKH, T.V.TORCHINSKAYA , Estados Unidos ,
1995 ; Influence of the substances on the silicon wires surface on the photoluminescence of porous silicon,,
Extranjero, VI International Conference ¿Thin films in Electronics¿, September 1995, Kherson,
Ukraine., T.V.TORCHINSKAYA, N.E.KORSUNSKAYA, B.DZUMAEV , Ucrania ,
1995 ; Porous Silicon, New Optoelectronic Material, Extranjero, XIII Symposia Latino American Solid Physics,
Porto Alegre, BRASIL,, T.V.TORCHINSKAYA , Brasil ,
1995 ; RECOMBINATION ENHANCED DEFECT REACTIONS AND ROLE OF RED EMITTING LIGHT
IN GAP LEDS DEGRADATION,, Extranjero, DEPARTMENT OF INORGANIC MATERIALS
ENGINEERING, SEOUL NATIONAL UNIVERSITY, SEOUL, SOUTH KOREA,
T.V.TORCHINSKAYA , República Corea ,
1995 ; Recombination enhanced defect reactions and role of red emitting light in GaP LED's degradation",,
Extranjero, Third IUMRS International Conference in Asia (IUMRS-ICA-'95), Seoul, SOUTH KOREA,,
T.V.TORCHINSKAYA , República Corea ,
1995 ; SiOx related photoluminescence excitation in porous silicon",, Nacional, 1995 MRS American Fall
Meeting, Boston, USA, T.V.TORCHINSKAYA , Estados Unidos ,
1994 ; Caracterization of deep - level defects and their connection with the perfomance of InxGa1-xAs/InP p-I-
n photodiodes, Extranjero, SPIE Conference ¿Microelectronic and Manufacturing¿94¿, 1994, Taxac,
USA, T.V.TORCHINSKAYA, V.I.KOOSHNIRENKO, C.J.MINER , Estados Unidos ,
1994 ; Characterization of deep-level defects in MOCVD InxGa1-xAs layers",, Extranjero, International 8th
Conference on Semi-insulating III-V Materials, Warsaw, POLAND, V.TORCHINSKAYA, , Polonia ,
1994 ; ,CHARACTERIZATION OF DEEPLEVEL DEFECTS IN MOCVDINXGA1XAS LAYERS ,,
Extranjero, INSTITUTE OF PHYSICS, POLISH ACADEMY OF SCIENCES, WARSAW, POLAND,
V.TORCHINSKAYA, , Polonia ,
1994 ; INJECTIONENHANCED DEFECT REACTIONS IN IIIV LIGHT EMITTING DIODES,, Extranjero,
MATERIALS TECHNOLOGY RD OPTOELECTRONICS DIVISION, HEWLETT PACKARD COM.
, SANJOSE, CALIFORNIA, USA, T.V.TORCHINSKAYA, , Estados Unidos ,
1994 ; Injection-enhanced defect reactions in III-V light emitting diodes",, Extranjero, IEEE International
Reliability Physics Symposium, Silicon Velley, San Jose, USA, 1994., T.TORCHYNSKA , Estados Unidos
,
1994 ; The deep center defects and field dependence of their parameters in MOCVD InxGa1-xAs/InP p-I-n
photodiodes, Extranjero, ¿, International Conference on Electronic Materials (ICEM¿94), Hsinchu,
Taiwane, T.V.TORCHINSKAYA, V.I.KOOSHNIRENKO, L.V.SHCHERBINA , Taiwán, Provincia China ,
1994 ; Transformation of exitonic spectra of GaN:N light-emitting structures on introduction of dislocations,
Extranjero, International Conference on Electronic Materials (ICEM¿94) , Hsinchu, Taiwane,,
T.V.TORCHINSKAYA, , Taiwán, Provincia China ,
1993 ; ,DEFECT REACTIONS IN IIIV LIGHT EMITTING DIODES IN UNEQULIBRIUM STATE,,
Extranjero, OPTOELECTRONIC DEPARTMENT RD , BELL NORTHERN RESEARCH, OTTAWA,
ONTARIO, CANAD, T.V.TORCHINSKAYA , Canadá ,
1993 ; INJECTIONENHANCED DEFECT REACTIONS IN IIIV LIGHT EMITTING DIODES,, Extranjero,
FACULTY OF APPLIED SCIENCE AND ENGINEERING, TORONTO UNIVERSITY, WATERLOO
UNIVERSITY, MACMASTER UNIVERSITY,ONTARIO, CANADA, T.V.TORCHINSKAYA , Canadá
,
1993 ; TEMPERATURE DEPENDENCE PECULARITIES OF POROUS SILICON
PHOTOLUMINESCENC, Extranjero, EMRS 1993 SPRING MEETING, STRASBOURG, FRANCE,
1993., A.G.SENCHILO, T.V.TORCHUNSKAYA, B.BULAKH, V.T , Francia ,
1993 ; Temperature dependence pecularities of porous silicon photoluminescence¿, Extranjero, E-MRS 1993
Spring Meeting, Strasbourg, FRANCE,, A.G.SENCHILO, T.V.TORCHUNSKAYA, , Francia ,
1992 ; THE EFFECT OF AN AVALANCHE BREAKDOWN ON MINORITY CARRIERS LIFETIME IN
LIGHT EMITTING DIODES, Extranjero, INTERNAT. CONFER. MICROELECTRONICS AND
COMPUTER SCIENCES, 1992,KISHINEV (VE ARTICULOS IN EXTENSO)., T.V.TORCHYNSKA ,
República Moldavia ,
1991 ; Comparison investigation InGaAsP/InP laser diodes¿, Nacional, III-th USSR Conference ¿Physical
Bases of Relability and Degradation of Semiconductor Devices¿, Kushunew, USSR, 1991,
T.V.TORCHINSKAYA , México ,
1991 ; ELECTRONICALLY ENHANCED DEFECT REACTIONS IN WIDEGAP SEMICONDUCTORS,,
Extranjero, INSTITUTE OF PHYSICS, POLISH ACADEMY OF SCIENCES, WARSAW, POLAND.,
T.V.TORCHYNSKA , Polonia ,
1991 ; Injection-stimulated reactions of defects in III-V LED¿s, Extranjero, III-th USSR Conference ¿Physical
Bases of Relability and Degradation of Semiconductor Devices¿, Kushunew, USSR, 1991,,
T.V.TORCHYNSKAYA, , República Moldavia ,
1991 ; New centers, attributed to Ge in AlGaAs dowble heterostructure light-emitting diodes and its injection-
stimulated anneling, Extranjero, III-th USSR Conference ¿Physical Bases of Relability and Degradation
of Semiconductor Devices¿, Kushunew, USSR, 1991, T.V.TORCHYNSKAYA, V.I.GNATENKO ,
República Moldavia ,
1991 ; 1991, ELECTRONICALLY ENHANCED DEFECT REACTIONS IN WIDEGAP
SEMICONDUCTORS, Extranjero, UNIVERSITY OF ROME (ROME) AND INSTITUTE OF
THEORETICAL PHYSICS OF UNIVERSITY OF MESSINA (MESSINA), ITALY,
T.V.TORCHYNSKA, , Italia ,
1990 ; Deep centers in AlGaAs heteroepitaxial diodes, Extranjero, XII-USSR Conference ¿Physics of
Semiconductors¿, Kiev, USSR, 1990,, T.V.TORCHYNSKA, M.K.SHEINKMAN , Ucrania ,
1990 ; Deep centers in AlGaAs heteroepitaxial structures, Extranjero, V-th USSR Conference ¿Physical
processes in Semiconductor structures¿, Kaluga, USSR,, T.V.TORCHINSKAYA , Federación Rusia ,
1990 ; INJECTIONENHANCED DEFECTREACTIONS IN IIIV LIGHTEMITTINGMATERIALS,,
Extranjero, INSTITUTE OF PHYSICS, CENTRAL LABORATORY OF SOLAR ENERGY
CONVERSION, BULGARIAN ACADEMY OF SCIENCES, SOFIA, BOLGARIA, T.V.TORCHYNSKA
, Bulgaria ,
1990 ; Recombination-enhanced defect reactions in light-emitting structures, Extranjero, XII-USSR Conference
¿Physics of Semiconductors¿, Kiev, USSR, 1990,, T.V.TORCHYNSKAYA , Ucrania ,
1990 ; Recombination-enhanced processes in epitaxial layers of III-V compounds, Extranjero, III USSR
Conference ¿Physics and Technology of thin semiconductor films¿, Ivano-Frankovsk, October,
1990,USSR, T.V.TORCHYNSKAYA , Ucrania ,
1989 ; Degradation of GaP:N and GaP:N,Zn-O light-emitting diodes,, Extranjero, Ukraine Conference¿Physical
methods of the forecast in the quality control and reliability tasks, Chernigov, September, 1989,
Ukraine, T.V.TORCHYNSKA, A.G.KARABAEV, T.G.BERDINSKIKH , Ucrania ,
1989 ; General defect transformation processes in light-emitting diodes under degradation, radiation and
ultrasound treatment. Reliability forecast,, Extranjero, Ukraine Conference¿Physical methods of the
forecast in the quality control and reliability tasks, Chernigov, September, 1989, Ukraine, T.V.
TORCHYNSKAYA, G.I.SEMENOVA, M.K.SHEINKMA , Ucrania ,
1989 ; Injection-enhanced deep center transformation in red AlGaAs light-emitting diodes¿,, Extranjero, I ¿th
USSR Conference ¿Physical Bases of Solid State Electronics¿, Leningrad, USSR, 1989,,
T.V.TORCHYNSKA, DZ. ABDULAEV, A.SHMATOV , Federación Rusia ,
1989 ; Joint mechanism of the defect transformation in light-emitting diodes under degradation, radiation and
ultrasound treatmen, Extranjero, International Conference ¿Physical problems of the optoelectronics¿,
¿OPTOELECTRONICS¿89¿,Baku, October, 1989,, T.V. TORCHYNSKAYA , Federación Rusia ,
1989 ; Physics of the degradation and reliability processes for red and infrared light-emitting diodes on the
base AlGaAs heterostructures, Extranjero, Ukraine Conference¿Physical methods of the forecast in the
quality control and reliability tasks, Chernigov, September, 1989, Ukraine,, T.V.TORCHYNSKA,
ZH.S.ABDULAEV, A.ZARECGNEV , Ucrania ,
1986 ; Conection of the degradation process of InGaAsSi LED with the transformation of structural defects,
Extranjero, 2-th USSR Conference ¿Physical base of Reliability and degradation of semiconductor
devices¿, Kishinev, 1986,, G.I.SEMENOVA, T.V.TORCHYNSKA, T.G.BERDINSKIKH , República
Moldavia ,
1986 ; Degradation of GaAS Si LED, Extranjero, 2TH USSR CONFERENCE PHYSICAL BASE OF
RELIABILITY AND DEGRADATION OF SEMICONDUCTOR DEVICES, KISHINEV,,
G.I.SEMENOVA, T.V.TORCHYNSKA, , República Moldavia ,
1986 ; Degradation of the green GaP:N light emitting diodes and factors, influent on, Extranjero, 2-th USSR
Conference ¿Physical base of Reliability and degradation of semiconductor devices¿, Kishinev, 1986,
T.V. TORCHYNSKAYA, M.K.SHEINKMAN, , República Moldavia ,
1984 ; ¿Connection of structure defects with excess current in light-emitting InGaAs/GaAs structures,
Extranjero, IV USSR Conference ¿Defect of Structure in Semiconductors¿, Novosibirsk, USSR,
G.I.SEMENOVA, T.V.TORCHYNSKA, E.BRAILOVSKII , Federación Rusia ,
1984 ; Influence of the electron irradiation with thereshold energy on the characteristics of the InGaAs:Si light
emitting diodes and their structural defects, Extranjero, USSR Conference ¿Radiation physics of
semiconductors and related materials¿, Tashkent, 1984, October, USSR, G.I.SEMENOVA,
T.V.TORCHYNSKA, T.G.BERDINSKIKH , Federación Rusia ,
1984 ; Physical nature of the light emitting diode and semiconductor laser degradation,, Extranjero, 3-th USSR
Conference ¿Physics of the degradation¿, 1984, November, Suzdal, USSR,, T.V. TORCHYNSKAYA ,
Federación Rusia ,
1983 ; Elementary mechanisms of the photofatigue, aging and degradation processes in II-VI photoresistors,,
Extranjero, 5-th USSR Conference ¿Physics and Tekhnical application of II-VI semiconductors¿, Vilnus,
December, 1983, USSR, T.V.TORCHYNSKA , Federación Rusia ,
1983 ; Invesyigation of the Photofatigue processes in solar cells Cu2S-CdS, Extranjero, 5-th USSR Conference
¿Physics and Tekhnical application of II-VI semiconductors¿, Vilnus, December 1983, USSR,
T.V.TORCHYNSKA, M.MIRZAZHANOV, A.MARCHENKO , Federación Rusia ,
1983 ; Photostimulated transformation and formation of local centers in II-VI semiconductors¿, Extranjero, V-
th USSR Conference ¿Radiation Physics and Chemistry of Ionic Crystals¿, Riga, USSR, 1983,
N.E.KORSUNSKAYA, T.V.TORCHYNSKAYA , Federación Rusia ,
1983 ; THE DECREASING OF THE DEEP RECOMBINATION CENTERS IN THE IMPATT DIODES,
Extranjero, 4TH LUND INTERNATIONAL CONFERENCE ON DEEP LEVEL IMPURITIES IN
SEMICONDUCTORS, MAY 1983, HUNGARY, EGER, 1983, ISMAILOV K.A., KONAKOVA R.V.,
TORCHYNSKAYA T.V., , Hungría ,
1982 ; Aging and degradation of phtoresistors based on CdS:Cu:Cl thin films, Extranjero, USSR Conference
¿Physical base of reliability and degradation of the semiconductor devices¿, Kushinev, 1982, May,
USSR, T.V.TORCHYNSKA, L.BAIDOKH , República Moldavia ,
1982 ; Mechanism of ageing process in phtoresistors based on CdS:Cu:Cl thin films¿, Nacional, II-th Ukrainian
Conference ¿Photoelectric phenomena in Semiconductors¿, Odessa, USSR, 1982,, T.V.TORCHYNSKA ,
Ucrania ,
1982 ; Mechanisms of photostimulated defect formation in Semiconductors¿,, Extranjero, VIII-USSR
Conference ¿Physics of Semiconductors¿, Baku, USSR,, N.E.KORSUNSKAYA, I.V.MARKEVICH,
T.V.TORCHINSK , Federación Rusia ,
1982 ; Mechanisms of photostimulayed defect formation in II-VI crystals and devices based on it, Extranjero, II-
th Ukrainian Conference ¿Photoelectric phenomena in Semiconductors¿, Odessa, USSR,,
N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSK , Ucrania ,
1982 ; Photofatigue and aging in solar cells¿, Nacional, USSR Conference ¿Physical base of reliability and
degradation of the semiconductor devices¿, Kushinev, 1982, T.V.TORCHYNSKA , República Moldavia ,
1982 ; Photostimulated processes in CdS-Cu2S solar cells¿, Extranjero, II-th Ukrainian Conference
¿Photoelectric phenomena in Semiconductors¿, Odessa, USSR, 1982, T.V.TORCHYNSKA, M-
MIRZAZHANOV , Ucrania ,
1981 ; Mechanisms of photo-induced defect creation in II-VI compouns and Devices,, Extranjero, International
Conference ¿Defects in Dielectric crystals¿, Riga, May 1981,USSR, I.V.MARKEVICH,
T.V.TORCHINSKAYA, M.K.SHEINKMAN , Federación Rusia ,
1981 ; Physical nature of degradation of light-emitting diodes and lasers, Extranjero, USSR Conference on
Luminescence, Leningrad, USSR, 1981, T.V.TORCHYNSKA, M.K.SHEINKMAN , Federación Rusia ,
1980 ; INFLUENCE OF THE ELECTRON IRRADIATION WITH THERESHOLD ENERGY ON THE
CHARACTERISTICS OF THE INGAASSI LIGHT EMITTING DIODES AND THEIR
STRUCTURAL DEFECTS,, Extranjero, USSR CONFERENCE RADIATION PHYSICS OF
SEMICONDUCTORS AND RELATED MATERIALS, TASHKENT, 1984, OCTOBER,
G.I.SEMENOVA, T.V.TORCHYNSKA, T.G.BERDINSKIKH, , Uzbekistán ,
1980 ; Mechanisms of the optical recordering and destraction information in CdS single crystals, based on the
photostimulated processes of local center transformation,, Extranjero, VI International Conference
Optics and Photoelectric phenomena in Solid State¿, Varna, Bulgaria,, N.E.KORSUNSKAYA,
I.V.MARKEVICH, T.V.TORCHINSK , Bulgaria ,
1980 ; MEMORY EFFECTS, STIMULATED BY THE LOW TEMPERATURE ANNELING OR DOPING IN
CDS CRYSTALS, Extranjero, VI INTERNATIONAL CONFERENCE OPTICS AND
PHOTOELECTRIC PHENOMENA IN SOLID STATE, VARNA, BULGARIA, MAY, 1980,
E.VATEVA, KORSUNSKAYA N.E., MARKEVICH I.V., NASHEV , Bulgaria ,
1980 ; Photostimulated deep centers convertion in II-VI semiconductors, Nacional, II-th USSR Conference
¿Deep Levels in Semiconductors¿, Tashkent, USSR, 1980,, T.V.TORCHINSKAYA , Federación Rusia ,
1979 ; Mechanism of the phtoconductivity degradation in CdS:Cu single crystals¿,, Extranjero, I-th Ukrainian
Conference ¿Photoelectric Phenomena in Semiconductors¿, Uzhgorod, USSR,1979,,
N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSK , Ucrania ,
1979 ; Photo (recombination) enhanced local center transformation in CdS and ZnSe monocrystals, Extranjero,
International Conference ¿Radiation Physics of Semiconductors and Related Materials¿, Tbilisi, USSR,
1979, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSK , Federación Rusia ,
1979 ; Photochemical reactions and center interaction in ZnSe, Extranjero, I-th Ukrainian Conference
¿Photoelectric Phenomena in Semiconductors¿, Uzhgorod, USSR, 1979,, I.V.MARKEVICH,
T.V.TORCHINSKAYA, M.K.SHEINKMAN , Ucrania ,
1979 ; Reversible increasing of photoconductivity of CdS:Cu single crystal under visible light actions¿,
Extranjero, I-th Ukrainian Conference ¿Photoelectric Phenomena in Semiconductors¿, Uzhgorod,
USSR,1979, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKA , Ucrania ,
1979 ; Transformation of DA-pairs and more complicated complexes under light irradiation in CdS single
crystals, Extranjero, I-th Ukrainian Conference ¿Photoelectric Phenomena in Semiconductors¿,
Uzhgorod, USSR, 1979, I.V.MARKEVICH, T.V.TORCHINSKAYA , Ucrania ,
1977 ; Interaction of the local defects in compensated CdS single crystals and change of this interaction under
illumination, Extranjero, I-th USSR Scientific Conference ¿Creation and Characterisation II-VI and IV-
VI Compounds and based on it solid solutions¿, Moscow, USSR, 1977, N.E.KORSUNSKAYA,
I.V.MARKEVICH, T.V.TORCHINSK , Federación Rusia ,
1977 ; Investigation of new luminescence band and photochemical radiation center transformation in CdS:Li
monocrystals, Extranjero, Proc. of Inter. Conference ¿ Science and Technic. of New Materials¿, Moscow,
USSR, 1977,, T.V.TORCHINSKAYA , Federación Rusia ,
1977 ; INVESTIGATION OF THE MECHNISM OF PHOTOCONDUCTIVITY DEGRADATION IN
CDSCUCL SINGLE CRYSTALS AND PHOTORESISTORS BASED ON CDSCUCL FILM,
Extranjero, ITH USSR SCIENTIFIC CONFERENCE CREATION AND CHARACTERISATION IIVI
AND IVVI COMPOUNDS AND BASED ON IT SOLID SOLUTIONS, MOSCOW, USSR, 1977,
T.V.TORCHINSKAYA, A.M.PAVELEZ, , Federación Rusia ,
1977 ; Investigation of the mechnism of photoconductivity degradation in CdS:Cu:Cl single crystals and
photoresistors based on CdS:Cu:Cl films, Extranjero, I-th USSR Scientific Conference ¿Creation and
Characterisation II-VI and IV-VI Compounds and based on it solid solutions¿, Moscow, USSR, 1977,
N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSK , Federación Rusia ,
1977 ; Nature and Symmetry of complex defects in CdS:Li single crystals, Extranjero, I-th USSR Scientific
Conference ¿Creation and Characterisation II-VI and IV-VI Compounds and based on it solid
solutions¿, Moscow, USSR, 1977, I.V.MARKEVICH, T.V.TORCHINSKAYA, V.I.BUDYANSKII ,
Federación Rusia ,
1976 ; Investigation of the new luminescence band nature in CdS:Li single crystals¿,, Extranjero, IV USSR
Conference ¿Physics, Chemistry and Technical Applications of II-VI Semiconductors¿, Odessa, USSR,
I.V.MARKEVICH, T.V.TORCHINSKAYA, M.K.SHEINKMAN , Ucrania ,
1976 ; Photochemical reactions of diffent types in clean and doped CdS singlecrystals, and their mechanisms,
Extranjero, IV USSR Conference ¿Physics, Chemistry and Technical Applications of II-VI
Semiconductors¿, Odessa, USSR, 1976., N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSK ,
Ucrania ,
1976 ; Photoluminescence of the CdS:Li single crystals, Extranjero, XXIII-th USSR Conference on
Luminescence, Kushunew, USSR, 1976,, I.V.MARKEVICH, T.V.TORCHINSKAYA, M.K.SHEINKMAN ,
República Moldavia ,
0 ; Exciton capture and thermal escape in InAs dot-in-a-well laser structures,, Extranjero, 9th International
Workshop on Beam Injectio Assesment of Microstructure in Semiconductors, Toledo, Spain, 29June-
3July 2008,, T. V. TORCHYNSKA, , España ,
FORMACION ACADEMICA
NIVELES/GRADOS
ACADEMICOS
07/08/1992 ; DIPLOMADO, PROFESOR TITULAR (FULL PROFESSOR), PROF. 020334, ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, Ucrania , , ENTIDADES EXTERNAS , TITULO DE
PROFESSOR TITULAR
01/03/1991 ; DIPLOMADO, SENIOR CIENTIFICO INVESTIGADOR, 612072, ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, Ucrania , , ENTIDADES EXTERNAS , TITULO DE SENIOR Cientifico
Investigador
01/02/1991 ; DOCTORADO, SEGUNDO GRADO-DOCTOR DE CIENCIAS FISICA Y MATEMATICAS
(HABILITACION), DT 005959, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, Ucrania ,
, ENTIDADES EXTERNAS , MECANISMO DEL PROCESO DE DEGRADACION EN
ESTRUCTURAS CON EMISION DE LUZ Y FOTOELECTRICAS
24/03/1978 ; DOCTORADO, DOCTOR EN CIENCIAS DE FISICA Y MATEMATICAS (PH.D), FM 006854,
ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, Ucrania , , ENTIDADES EXTERNAS ,
REACCIONES FOTOQUIMICAS EN MATERIALES DE SEMICONDUCTORESDE IIVI.
01/03/1973 ; MAESTRIA, MAESTRA DE CIENCIAS DE FISICA DE SEMICONDUCTORES Y DIELECTRICOS,
072885, NATIONAL TECHNICAL UNIVERSITY, Ucrania , , ENTIDADES EXTERNAS ,
PROPIEDADES DE VIDRIO DE OXIDO DE NIOBIO (DIELECTRIC PROPERTIES OF THE GLASS
BASED ON NIOBIO OXIDE)
IDIOMAS
; Ruso LENGUA MATERNA
; Ucraniano LENGUA MATERNA
08/09/2006 ; Inglés Conversacion: Alto , Lectura: Alto , Escritura: Alto (0)
01/09/2006 ; Español Conversacion: Alto , Lectura: Alto , Escritura: Alto (0)
FORMACION DE RECURSOS HUMANOS
DOCENCIA
02/2016 -
06/2016 ;
Introduccion en Ciencia de Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPARTAMENTO DE FISICA, ,MAESTRIA
02/2016 -
06/2016 ;
Laboratorio Fisica II, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /
DEPARTAMENTO DE FISICA, ,LICENCIATURA
09/2015 -
01/2016 ;
Laboratorio Fisica I, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /
DEPARTAMENTO DE FISICA, ,LICENCIATURA
09/2015 -
01/2016 ;
Introduction en Ciencia de materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPARTAMENTO DE FISICA, ,MAESTRIA
03/2015 -
07/2015 ;
Introduccion a Ciencia de \Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS, ,MAESTRIA
03/2015 -
07/2015 ;
Laboratorio Fisica II, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS,
,LICENCIATURA
03/2015 -
07/2015 ;
Introduccion a Fisica del Estado solido, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL
INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS, ,MAESTRIA
08/2014 -
02/2015 ;
Laboratorio Fisica I, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /
DEPARTAMENTO DE FISICA, ,LICENCIATURA
08/2014 -
02/2015 ;
Laboratorio Fisica I, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS,
,LICENCIATURA
08/2013 -
12/2013 ;
Introduccion a ciencia materiales, Tiempo en Horas (6) INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y
MATEMATICAS / DEPARTAMENTO DE FISICA, ,MAESTRIA
08/2013 -
12/2013 ;
Temas selectas de electronica, Tiempo en Horas (4) INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE INGENIERIA
MECANICA Y ELECTRICA (UNIDAD CULHUACAN) / DEPARTAMENTO DE INGENIERIA EN
COMUNICACIONES Y ELECTRONICA, ,DOCTORADO
08/2013 -
12/2013 ;
fisica del estado solido, Tiempo en Horas (6) INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL INTERDISCIPLINARIA EN
INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS BASICAS, ,DOCTORADO
01/2013 -
06/2013 ;
Fisica del Estado Solido, Tiempo en Horas (6) INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL
INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS, ,DOCTORADO
01/2013 -
06/2013 ;
Introduction en Ciencia Materiales, Tiempo en Horas (6) INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y
MATEMATICAS, ,MAESTRIA
08/2012 -
12/2012 ;
Laboratorio Fisica II, Tiempo en Horas (3) INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS,
,LICENCIATURA
08/2012 -
12/2012 ;
Introduccion en Ciencia de los materiales, Tiempo en Horas (6) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS, ,MAESTRIA
08/2012 -
12/2012 ;
Laboratorio Fisic II, Tiempo en Horas (3) INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS,
,LICENCIATURA
01/2012 -
06/2012 ;
Fisica del estado solido, Tiempo en Horas (108) INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL
INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS
BASICAS, ,DOCTORADO
01/2012 -
06/2012 ;
Laboratorio Fisica II, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /
DEPARTAMENTO DE FISICA, ,LICENCIATURA
01/2012 -
06/2012 ;
Licenciatura en Fisicamatematicas, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL
/ UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y
MATEMATICAS / DEPARTAMENTO DE FISICA, ,LICENCIATURA
08/2011 -
12/2011 ;
Laboratorio Fisica II, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /
DEPARTAMENTO DE FISICA, ,LICENCIATURA
08/2011 -
12/2011 ;
Laboratorio fisica II, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /
DEPARTAMENTO DE FISICA, ,LICENCIATURA
08/2011 -
12/2011 ;
Introduccion a Fisica Estado solido, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL
INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS
BASICAS, ,MAESTRIA
08/2011 -
12/2011 ;
Temas selectos de comunicaciones, Tiempo en Horas (81) INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE INGENIERIA
MECANICA Y ELECTRICA (UNIDAD CULHUACAN) / DEPARTAMENTO DE INGENIERIA EN
COMUNICACIONES Y ELECTRONICA, ,DOCTORADO
01/2011 -
06/2011 ;
Laboratorio Fisica II, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /
DEPTO. DE CIENCIAS DE MATERIALES, ,LICENCIATURA
01/2011 -
06/2011 ;
Temas selectos de electronica, Tiempo en Horas (81) INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE INGENIERIA
MECANICA Y ELECTRICA (UNIDAD CULHUACAN) / DEPARTAMENTO DE INGENIERIA EN
COMUNICACIONES Y ELECTRONICA, ,DOCTORADO
01/2011 -
06/2011 ;
introduccion a fisica del estado solido, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
01/2011 -
06/2011 ;
Laboratorio de Fisica II, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y
MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,LICENCIATURA
08/2009 -
12/2009 ;
Introducción a Ciencia de Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
08/2009 -
12/2009 ;
Temas avanzados de Comunicación y Electrónica, Tiempo en Horas (81) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA (UNIDAD CULHUACAN) /
DEPARTAMENTO DE INGENIERIA EN COMUNICACIONES Y ELECTRONICA, ,DOCTORADO
01/2009 -
06/2009 ;
Introduccion a Ciencia de los Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
01/2009 -
06/2009 ;
Temas selestos de Electronica, Tiempo en Horas (81) INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE INGENIERIA
MECANICA Y ELECTRICA (UNIDAD CULHUACAN) / DEPARTAMENTO DE INGENIERIA EN
COMUNICACIONES Y ELECTRONICA, ,DOCTORADO
01/2009 -
06/2009 ;
Temas selectos de Electrónica, Tiempo en Horas (81) INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE INGENIERIA
MECANICA Y ELECTRICA (UNIDAD CULHUACAN) / DEPARTAMENTO DE INGENIERIA EN
COMUNICACIONES Y ELECTRONICA, ,DOCTORADO
01/2009 -
06/2009 ;
Introduccion a Ciencia de los Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS, ,MAESTRIA
08/2008 -
12/2008 ;
Introduccion a Ciencia de Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
01/2008 -
06/2008 ;
Introduccion a Ciencia de materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
08/2007 -
12/2007 ;
Curso especial, Tiempo en Horas (108) INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL INTERDISCIPLINARIA EN
INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS BASICAS, ,MAESTRIA
08/2007 -
12/2007 ;
Introduccion a Ciencia de Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
01/2007 -
06/2007 ;
Introduccion a Ciencia de Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
01/2007 -
06/2007 ;
Propiedades opticas de nanocristales de semiconductores, Tiempo en Horas (54) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,DOCTORADO
08/2006 -
12/2006 ;
Materiales y Dispositivoa optoelectronicos, Tiempo en Horas (72) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,DOCTORADO
08/2006 -
12/2006 ;
Introduccion Ciencia Materiales (6h/s) 1-ro-2006/2007, Tiempo en Horas (108) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,MAESTRIA
08/2006 -
12/2006 ;
Introduccion a Ciencia Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO NACIONAL
/ UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y
MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
08/2006 -
12/2006 ;
Materiales y Despositivos optoelectronicos(4h/s) 1-ro 2006/2007, Tiempo en Horas (72) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,DOCTORADO
01/2006 -
06/2006 ;
Introd. Cienc. Materiales (6h/s) 2-do 2005/2006, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
01/2006 -
06/2006 ;
Fisica de dispositivos de semiconductores, Tiempo en Horas (72) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,DOCTORADO
01/2006 -
06/2006 ;
Fisica despositivos de semiconductores (4h/s) 2-do 2005/2006, Tiempo en Horas (72) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,DOCTORADO
01/2006 -
06/2006 ;
Seminario investigacion III (2h/s) 2-do 2005/2006, Tiempo en Horas (36) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,DOCTORADO
01/2006 -
06/2006 ;
Introducccion a Ciencia de Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
08/2005 -
12/2005 ;
Introd. Ciencia Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y
MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
08/2005 -
12/2005 ;
Introd. Cienc. Materiales(6h/s) 1-ro-2005/2006, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
08/2005 -
12/2005 ;
Materiales y Despositivos Optoelectronicos(4h/s) 1-ro 2005/2006, Tiempo en Horas (72) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,DOCTORADO
08/2005 -
12/2005 ;
Seminario Investigacion II (2h/s) 1-ro 2005/2006, Tiempo en Horas (36) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,DOCTORADO
01/2005 -
06/2005 ;
Seminario Investigacion II(2h/s) 2-do 2004/2005, Tiempo en Horas (36) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,DOCTORADO
01/2005 -
06/2005 ;
Seminario Investigacion III (2h/s) 2do-2004/2005, Tiempo en Horas (36) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,DOCTORADO
01/2005 -
06/2005 ;
Seminario Investigacion I (2h/s) 2-do 2004/2005, Tiempo en Horas (36) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,DOCTORADO
08/2004 -
12/2004 ;
Materiales y Dispositivos optoeletcronicos(4h/s) 1-ro 2004/2005, Tiempo en Horas (72) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,DOCTORADO
08/2004 -
12/2005 ;
Fisica de dispositivos semiconductores(4h/s) 1-ro 2004/2005, Tiempo en Horas (72) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,DOCTORADO
08/2004 -
12/2004 ;
Seminario Investigacion II(2h/s) 1-ro 2004/2005, Tiempo en Horas (36) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,DOCTORADO
01/2004 -
06/2004 ;
FISICA del ESTADO SOLIDO (4h/sem) 2do 2003/2004, Tiempo en Horas (72) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,DOCTORADO
01/2004 -
06/2004 ;
Seminario Investigacion I (2h/s) 2-do 2003/2004, Tiempo en Horas (36) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,DOCTORADO
08/2003 -
12/2003 ;
Propiedades opticas y fotoelectricas de solidos (4h/s) 1-ro 2003/2004, Tiempo en Horas (72)
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,DOCTORADO
08/2003 -
12/2003 ;
Introd. Cienc. Materiales (6h/s) 1-ro 2003/2004, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
08/2003 -
12/2003 ;
SOLID STATE PHYSICS (4h/s), Tiempo en Horas (72) INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y
MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,DOCTORADO
01/2003 -
06/2004 ;
Introd. Ciencia Materiales (6h/s) 2-do 2003/2004, Tiempo en Horas (108) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,MAESTRIA
01/2003 -
06/2003 ;
Materiales y Despositivos optoelectronicos (4h/s) 2-d0 2002/2003, Tiempo en Horas (72) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,DOCTORADO
01/2003 -
06/2003 ;
Introd. Ciencia Materiales (6h/s) 2-do 2002/2003, Tiempo en Horas (108) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,MAESTRIA
08/2002 -
12/2003 ;
Seminario investigacion II (2h/s) 1-ro 2002/2003, Tiempo en Horas (36) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,DOCTORADO
08/2002 -
12/2002 ;
Seminario Investigacion III (2h/s) 1-ro 2002/2003, Tiempo en Horas (36) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,DOCTORADO
08/2002 -
12/2002 ;
Introd. Cienc. Materiales(6h/s) 1-ro 2002/2003, Tiempo en Horas (108) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
01/2002 -
06/2002 ;
Propiedades opticos y fotoelectricos(4h/s) 2-do-2001/2002, Tiempo en Horas (72) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,DOCTORADO
01/2002 -
06/2002 ;
Seminario investigacion I (2h/s) 2-do 2001/2002, Tiempo en Horas (36) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,DOCTORADO
01/2002 -
06/2002 ;
Seminario Departamental I (2h/s) 2-do 2001/2002, Tiempo en Horas (36) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,DOCTORADO
01/2002 -
06/2002 ;
Seminario investigacion II (2h/s) 2-do 2001/2002, Tiempo en Horas (36) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,DOCTORADO
08/2001 -
12/2001 ;
Introd.Ciencia Materiales (6h/s) 1-ro 2001/2002, Tiempo en Horas (108) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,MAESTRIA
01/2001 -
06/2001 ; DESPOSITIVOS SEMICONDUCTORES OPTOELECTRONICAS PARA COMUNICACIONES
Por FIBRA OPTICA(3h/s) 2-do 2000/2, Tiempo en Horas (72) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
01/2001 -
06/2001 ; ALTA EFICIENCIA Y RESISTENCIA A LA RADIACION DE CELDAS SOLARES PARA
APLICACIONES TERRESTRES Y ESPACI, Tiempo en Horas (72) INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA
08/2000 -
12/2000 ;
Introduccion. Ciencia Materiales (6h/s) 1-ro 2000/2001, Tiempo en Horas (108) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,MAESTRIA
01/2000 -
06/2000 ;
Introd. Ciencia Materiales (6h/s) 2-do 1999/2000, Tiempo en Horas (108) INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
,MAESTRIA
09/1998 -
01/1999 ;
SOLID STATE PHYSICS (6h/s) 1-ro 1998/1999, Tiempo en Horas (108) ACADEMICA NACIONAL
DE CIENCIAS DE UCRANIA, ,DOCTORADO
02/1998 -
06/1998 ;
SOLID STATE PHYSICS (6h/s) 2-ro 1997/1998, Tiempo en Horas (108) ACADEMICA NACIONAL
DE CIENCIAS DE UCRANIA, ,DOCTORADO
09/1997 -
01/1998 ;
SOLID STATE PHYSICS (6h/s) 1-ro 1997/1998, Tiempo en Horas (108) ACADEMICA NACIONAL
DE CIENCIAS DE UCRANIA, ,DOCTORADO
09/1997 -
01/1998 ;
SOLID STATE PHYSICS (6h/s) 1-ro 1997/1998, Tiempo en Horas (108) ACADEMICA NACIONAL
DE CIENCIAS DE UCRANIA, ,DOCTORADO
02/1997 -
04/1997 ;
SOLID STATE PHYSICS (6h/s) 2-do 1996/1997, Tiempo en Horas (108) ACADEMICA NACIONAL
DE CIENCIAS DE UCRANIA, ,DOCTORADO
09/1996 -
01/1997 ;
SOLID STATE PHYSICS (6h/s) 1-ro 1996/1997, Tiempo en Horas (108) ACADEMICA NACIONAL
DE CIENCIAS DE UCRANIA, ,DOCTORADO
02/1996 -
06/1996 ;
Solis State Physics (6 hours) 2-d 1995/1996, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,
09/1995 -
01/1996 ;
SOLID STATE PHYSICS (6h/s) 1-ro 1995/1996, Tiempo en Horas (108) ACADEMICA NACIONAL
DE CIENCIAS DE UCRANIA, ,DOCTORADO
02/1995 -
06/1995 ;
PHYSICS OF SEMICONDUCTORS (6h/s) 2-do-1994/1995, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,MAESTRIA
09/1994 -
01/1995 ;
PHYSICS OF SEMICONDUCTORS (6h/s) 1-ro-1994/1995, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,MAESTRIA
02/1994 -
06/1994 ;
PHYSICS OF SEMICONDUCTORS (6h/s) 2-do-1993/1994, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,MAESTRIA
09/1993 -
01/1994 ;
PHYSICS OF SEMICONDUCTORS (6h/s) 1-ro-1993/1994, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,MAESTRIA
02/1993 -
06/1993 ;
PHYSICS OF SEMICONDUCTORS (6h/s) 2-ro-1992/1993, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,MAESTRIA
02/1993 -
06/1993 ;
ALTERNATIVE SOURCES OF ELECTRISITY, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO
09/1992 -
01/1993 ;
PHYSICS OF SEMICONDUCTORS (6h/s) 1-ro-1992/1993, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,MAESTRIA
02/1992 -
06/1992 ;
PHYSICS OF SEMICONDUCTORS (6h/s) 2-ro-1991/1992, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,MAESTRIA
09/1991 -
01/1992 ;
PHYSICS OF SEMICONDUCTORS (6h/s) 1-ro-1991/1992, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,MAESTRIA
02/1991 -
06/1991 ;
PHOTOELECTRONICS MATERIALS(6h/s) 2-do 1990/1991, Tiempo en Horas (108)
ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO
09/1990 -
01/1991 ;
PHOTOELECTRONICS MATERIALS(6h/s) 1-ro 1990/1991, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO
02/1990 -
06/1990 ;
PHOTOELECTRONICS MATERIALS(6h/s) 2-do 1989/1990, Tiempo en Horas (108)
ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO
09/1989 -
01/1990 ;
ALTERNATIVE PHOTOELECTRICAL SOURCES FOR ELECTRISITY, Tiempo en Horas (108)
ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO
09/1989 -
01/1990 ;
PHOTOELECTRONICS MATERIALS(6h/s) 1-ro 1989/1990, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO
02/1989 -
06/1989 ;
PHOTOELECTRONICS MATERIALS(6h/s) 2-do 1988/1989, Tiempo en Horas (108)
ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO
09/1988 -
01/1989 ;
PHOTOELECTRONICS MATERIALS(6h/s) 1-ro 1988/1989, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO
02/1988 -
06/1988 ;
Fisica de semiconductores 2do- 1987/1988, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
01/1988 -
06/1988 ;
Fisica de despositivos de semiconductores 2do- 1987/1988, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO
09/1987 -
01/1988 ;
Fisica de despositivos de semiconductores 1ro- 1987/1988, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO
09/1987 -
01/1988 ;
Fisica de semiconductores 1ro- 1987/1988, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
02/1987 -
06/1987 ;
Fisica despoitivos de semiconductores 2do- 1986/1987, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO
09/1986 -
01/1987 ;
OPTOELECTRONICS MATERIALS AND ITS APPLICATION FOR ENERGY PRODUCTION,
Tiempo en Horas (108) ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO
09/1986 -
01/1987 ;
Fisica de semiconductores 1ro- 1986/1987, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
09/1986 -
01/1987 ;
Fisica despositivos e semiconductores 1ro- 1986/1987, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO
02/1986 -
06/1987 ;
Fisica de semiconductores 2do- 1986/1987, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
02/1986 -
06/1986 ;
Fisica de semiconductores 2do- 1985/1986, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
02/1986 -
06/1986 ;
Fisica despositivos de semiconductores 2do- 1985/1986, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO
09/1985 -
01/1986 ;
Fisica de semiconductores 1ro- 1985/1986, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
09/1985 -
01/1986 ;
Fisica despositivos de semiconductores 1ro- 1985/1986, Tiempo en Horas (108) ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO
02/1985 -
06/1985 ;
Fisica de semiconductores 2do- 1984/1985, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
09/1984 -
01/1985 ;
Fisica de semiconductores 1ro- 1984/1985, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
02/1984 -
06/1984 ;
Fisica de semiconductores 2do- 1983/1984, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
09/1983 -
01/1984 ;
Fisica de semiconductores 1ro- 1983/1984, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
02/1983 -
06/1983 ;
Fisica de semiconductores 2do- 1982/1983, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
09/1982 -
01/1983 ;
Fisica de semiconductores 1ro- 1982/1983, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
02/1982 -
06/1982 ;
Fisica de semiconductores 2do- 1981/1982, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
09/1981 -
01/1982 ;
Fisica de semiconductores 1ro- 1981/1982, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,
02/1981 -
06/1981 ;
Fisica de semiconductores 2do- 1980/1981, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
09/1980 -
01/1981 ;
Fisica de semiconductores 1ro- 1980/1981, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
09/1980 -
01/1981 ;
PHYSICS OF SEMICONDUCTOR DEVICES, Tiempo en Horas (108) ACADEMICA NACIONAL
DE CIENCIAS DE UCRANIA, ,DOCTORADO
09/1980 -
01/1981 ;
Fisica clasica I, Tiempo en Horas (108) ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA,
,LICENCIATURA
02/1980 -
06/1980 ;
Fisica de semiconductores 2do - 1979/1980, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
02/1980 -
06/1980 ;
Fisica clasica II, Tiempo en Horas (72) ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA,
,MAESTRIA
09/1979 -
01/1980 ;
Physics of Semiconductors 1- 1979/1980, Tiempo en Horas (108) ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, ,DOCTORADO
TESIS DIRIGIDAS
; Caracterizacion optica y estructural de Nanocumulos embebidos en matrices amorfas, INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD
PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS,
DOCTORADO, Brenda Carolina Perez Millan México ,
; Preparacion, bioconjugacion e investigación óptica de puntos cuanticos de CdSe-ZnS nucleo-corazo
con anticuerpos, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL
SUPERIOR / ESCUELA SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA (UNIDAD
CULHUACAN) / DEPARTAMENTO DE INGENIERIA EN COMUNICACIONES Y
ELECTRONICA, DOCTORADO, Ana Lilia Quintos Vazquez, México ,
; Sintesis d Nanoalambres de Oxido de Zinc en sustratos de Carburo de Silicio poroso, INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD
PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS,
DOCTORADO, Isis Chetzyl Ballardo Rodrigue México ,
11/01/2006 ; MECANISMAS de FOTOLUMINESCENCIA Y SU EXCITACION EN ESTRUCTURAS DE Si
de BAJA DIMENCIONALIDAD (alambres y puntos cuanticos), INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, DOCTORADO,
FRANCISCO GUILLERMO BECERRIL E México ,
; Investigacion optica de puntos cuanticos de nucleo coraza CdSe/ZnS y CdSeTe/ZnS bioconjugados
con anticuerpos de virus de papilloma humana¿, INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL
INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS, DOCTORADO,
Jaramillo Gomez Juan Antonio México ,
16/11/2015 ; Investigacion optica de puntos cuanticos de nucleo coraza CdSe/ZnS y CdSeTe/ZnS bioconjugados
con anticuerpos de virus de papilloma humano, INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL
INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS
BASICAS, DOCTORADO, Juan Antonio Jaramillo Gomez México ,
14/05/2015 ; Caracterizacion óptica y estructural de nanocristales de silicio embebidas en dos matrices: nitruro
de silicio y oxido de aluminio, INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL INTERDISCIPLINARIA EN
INGENIERIA Y TECNOLOGIAS AVANZADAS, DOCTORADO, Erasto Vergara Hernandez México
,
13/05/2015 ; Caracterizacion óptica y estructural de nanocristales de silicio embebidas en dos matrices: nitruro
de silicio y oxido de aluminio, INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL INTERDISCIPLINARIA EN
INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS BASICAS, DOCTORADO, Erasto
Vergara Hernandez México ,
27/03/2015 ; Propiedades ópticas y estructurales de pozos cuánticos de GaAs/AlGaAs/InGaAs con puntos
cuánticos de InAs embebidos, en dependencia de la composición de la capa de recubrimiento¿.,
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
ESCUELA SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA (UNIDAD CULHUACAN) /
DEPARTAMENTO DE INGENIERIA EN COMUNICACIONES Y ELECTRONICA, DOCTORADO,
. Ingri Jasmin Guerrero Moreno México ,
13/05/2015 ; Propiedades ópticas y estructurales de pozos cuánticos de GaAs/AlGaAs/InGaAs con puntos
cuánticos de InAs embebidos, en dependencia de la composición de la capa de recubrimiento,
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
ESCUELA SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA (UNIDAD
AZCAPOTZALCO), DOCTORADO, Ingri Jasmin Gerrero Moreno México ,
13/11/2013 ; Estudio de la propiedades opticas y estructurales de nanoparticulas de Oxido de Zinc, INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD
PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS,
DOCTORADO, Brahim EL Filali México ,
17/01/2014 ; Comparacion de los Parametros Opticos y Estructuralles en Pozos Cuanticos InxGa1-xAs/GaAs
con Puntos Cuanticos InAs Embebidos, INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE INGENIERIA MECANICA Y
ELECTRICA (UNIDAD CULHUACAN), DOCTORADO, . Leonardo Gabriel Vega Macote México ,
20/06/2013 ; Variación de la emisión de puntos cuánticos de InAs sometidos a tratamiento térmico, INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD
PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS /
CIENCIAS BASICAS, MAESTRIA, Leonardo David Cruz Diosdado México ,
14/01/2013 ; ¿Investigacion de variación de propiedades ópticas de puntos cuánticos de nucleo/coraza CdSe/ZnS
en procesos de bioconjugacion¿,, INSTITUTO POLITECNICO NACIONAL / SECRETARIA DE
INVESTIGACION Y POSGRADO, MAESTRIA, Isis Chetzyl Ballardo Rodrigue México ,
11/01/2010 ; ¿Caracterizacion y Estudio de Nanocristales de Carburo de Silicio Poroso, UNIVERSIDAD
AUTONOMA METROPOLITANA / UNIDAD AZCAPOTZALCO / DIVISION DE CIENCIAS
BASICAS E INGENIERIA (CBI), DOCTORADO, Miguel Morales Rodriguez México ,
12/12/2011 ; Investigacion por me6todos optica i EPR de pozos de SiC porosos, UNIVERSIDAD AUTONOMA
METROPOLITANA / UNIDAD AZCAPOTZALCO / DIVISION DE CIENCIAS BASICAS E
INGENIERIA (CBI), DOCTORADO, Miguel Morales Rodriguez México ,
08/06/2012 ; Investigacion de propiedades ópticas y estructurales de pozos cuánticos con puntos cuánticos del
grupo III y V., INSTITUTO POLITECNICO NACIONAL / SECRETARIA DE INVESTIGACION Y
POSGRADO, MAESTRIA, Cisneros Tamayo Ricardo México ,
20/01/2012 ; Estudio de parametros opticos de puntos cuanticos de InAs embebidos en pozos cuanticos
multiples, en dependencia de la composion de la capa de recubrimento, INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD
PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS /
CIENCIAS BASICAS, MAESTRIA, Miguel Ojeda Martinez México ,
19/01/2012 ; Correlacion de la emission de luz y características de difracción de rayos X en pozos cuánticos con
puntos cuánticos embebidos, INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /
DEPARTAMENTO DE FISICA, MAESTRIA, Roberto Luis Mascorro Alquicir México ,
13/01/2012 ; Propiedades opticas de puntos cuanticos de CdSe/ZnS conjugados con biomoleculas, INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD
PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS /
CIENCIAS BASICAS, MAESTRIA, Oscar Saul Lopez de la Luz México ,
15/03/2011 ; Estimacion de energia de esfuerzos elasticos en multipozos cuanticos de semiconductores
embebidos con differentes densidades de puntos cuanticos, INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL
INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS
BASICAS, MAESTRIA, Ingri Jazmin Guerrero Moreno, México ,
11/03/2011 ; Variacion y no homogeneidad de la fotoluminescencia en puntos cuanticos de InAs embebidos en
pozos cuanticos de InGaAs, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS
DE NIVEL SUPERIOR / UNIDAD PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y
TECNOLOGIAS AVANZADAS / CIENCIAS BASICAS, MAESTRIA, Ingri Jasmin Moreno Gerrero
México ,
12/03/2010 ; Espectroscopia de emisión de estados de interface en puntos cuánticos de CdSe/ZnS y su variación
con el proceso de bioconjugacion,, INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL INTERDISCIPLINARIA EN
INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS BASICAS, MAESTRIA, Leonardo
Gabriel Vega Macotela México ,
12/03/2010 ; Investigacion optica de puntos cuanticos de CdSe/ZnS bioconjugados con biomolecules,
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
UNIDAD PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS
AVANZADAS / CIENCIAS BASICAS, MAESTRIA, Leonardo Gabriel Vega Macotela México ,
09/12/2009 ; Comparación de parámetros de dispositivos ¿ diodos p-i-n de deferentes materiales para
aplicaciones en antenas de arreglos de fase y sistemas radares,, INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL
INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS
BASICAS, MAESTRIA, Luis Alejandro Iturri Honojosa México ,
09/12/2009 ; Comparación de los parametros de dispositivos - diodos p-i-n de diferentes materiales con sistemas
micro-electro-mecánicos para aplicaciones en antenas de arreglos de fase y sistemas radares",
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
UNIDAD PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS
AVANZADAS / CIENCIAS BASICAS, MAESTRIA, Alejandro Iturri Hinojosa México ,
17/12/2008 ; Estudio de Emision de Luz y Difraccion de Rayos X de nanocristales de Carburo de Silicio,,
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
UNIDAD PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS
AVANZADAS / CIENCIAS BASICAS, MAESTRIA, Jorge Yescas Hernandez México ,
17/12/2008 ; Estudio de Emision de Luz y Difraccion de Rayos X de nanocristales de Carburo de Silicio,
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
UNIDAD PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS
AVANZADAS / CIENCIAS BASICAS, MAESTRIA, Jorge Arturo Yescas Hernandez México ,
23/05/2008 ; Investigacion de las propiedades opticas de nanocristales de Ge y Si embebidos en diferentes
matrices, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL
SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE
MATERIALES, DOCTORADO, Alexandro Vivas Hernandez México ,
15/02/2008 ; Propiedades opticas y estructurales de NC-Si embebidos en Silicio amorfo, INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
MAESTRIA, Anna Lilia Quintas Vazquez México ,
21/02/2008 ; Caracterizacion optica y estructural de peliculas nanocristalinas de carburo de silicio, INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
DOCTORADO, Aaron Israel Diaz Cano México ,
05/06/2007 ; Investigacion de las caracteristicas opticas de estructuras con puntos cuanticos de InAs embebidas
en pozos cuanticos de InGaAs/GaAS para laseres de nueva generacion para fibra optica,
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
ESCUELA SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA (UNIDAD CULHUACAN) /
DEPARTAMENTO DE INGENIERIA EN COMUNICACIONES Y ELECTRONICA, DOCTORADO,
Erik Velazquez Losada México ,
22/02/2007 ; Propiedades opticas de puntos cuanticos de InAs embebidos en pozos cuanticos de InGaAs/GaAs
con diferente contenido de In., INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /
DEPTO. DE CIENCIAS DE MATERIALES, DOCTORADO, JOSE LUIS CASAS ESPINOLA México
,
03/03/2005 ; ESPECTROSCOPIA de ESTADOS MULTI EXCITADOS de PUNTOS CUANTICOS de InAs
EMBEBIDOS EN POZOS InGaAs, INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /
DEPTO. DE CIENCIAS DE MATERIALES, MAESTRIA, Hilda MARGARITA ALFARO LOPEZ
México ,
02/04/2003 ; INVESTIGACION COMPARATIVA DE LA FOTOLUMINISCENCIA Y SU EXCITACION EN
ESTRUCTURAS DE NANOALAMBRES DE SI Y PELICULAS de SiOx ENRIQUECIDAS CON
SI, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
MAESTRIA, AARON ISRAEL DIAZ CANO México ,
13/03/2003 ; DEPENDENCIA DE LA FOTOLUMINISCENCIA EN NANO ALAMBRES DE SILICIO
POROSO EN FUNCION DE LA MORFOLOGIA SUPERFICIAL Y LA COMPOSICION DE
OXIDO DE SILICIO, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE
NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE
CIENCIAS DE MATERIALES, MAESTRIA, MIGUEL MORALES RODRIGUEZ México ,
23/10/2002 ; DISENO Y INVESTIGACION DE CELDAS SOLARES PARA LAS COMUNICACIONES
SATELITALES, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE
NIVEL SUPERIOR / ESCUELA SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA
(UNIDAD ZACATENCO) / DEPARTAMENTO DE INGENIERIA DE TELECOMUNICACIONES,
MAESTRIA, ALEJANDRO VIVAS HERNANDEZ México ,
23/10/2002 ; INVESTIGACION DE LAS PROPIEDADES ELECTRICAS Y OPTICAS DE LOS SISTEMAS
SEMICONDUCTORES DE BAJA DIMENCION PARA APLICACION EN COMUNICACIONES
POR FIBRA OPTICA, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE
NIVEL SUPERIOR / ESCUELA SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA
(UNIDAD ZACATENCO) / DEPARTAMENTO DE INGENIERIA DE TELECOMUNICACIONES,
MAESTRIA, ERICK VELAZQUEZ LOZADA México ,
17/11/2000 ; NATURALEZA DE LA BANDA ROJA DE FOTOLUMINISCENCIA EN EL SILICIO POROSO,
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,
MAESTRIA, FRANCISCO GUILLERMO BECERRIL E México ,
27/09/1999 ; ROLE OF SURFACE IN EXCITATION PROCESS OF POROUS SILICON
PHOTOLUMINESCENCE, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA /
INSTITUTO DE FISICA DE MATERIA CONDENSADA, DOCTORADO, KHOMENKOVA Larisa
Ucrania ,
27/02/1998 ; Nanocrystaline structure development and photoluminescence investigation, ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO, JUMAEV Berdishykyr Ucrania ,
26/02/1997 ; RADIATION STIMULATED VARIATION OF IV CHARACTERISTICS OF IMPATT DIOD,
NATIONAL TECHNICAL UNIVERSITY, MAESTRIA, TAGAEV M.B. Ucrania ,
24/05/1996 ; Investigation of the deep centers in double AlGaAs heterostructures doping by amphoteric
impurities, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO,
GNATENKO Vitaliy Ucrania ,
24/02/1995 ; X-ray photoelectronic emission studies of porous silicon surface, NATIONAL TECHNICAL
UNIVERSITY, MAESTRIA, Sergey O. Antonov Ucrania ,
24/02/1995 ; SIMS STUDIES OF POROUS SILICON SURFACE, NATIONAL TECHNICAL UNIVERSITY,
MAESTRIA, Alexandr. L. Kapitanchuk Ucrania ,
16/06/1993 ; Excitation mechanism of porous silicon photoluminescence, NATIONAL TECHNICAL
UNIVERSITY, MAESTRIA, HOMENKOVA L. I. Ucrania ,
22/02/1993 ; DEEP CENTER INVESTIGATION IN MOCVD INGAAS LAYERS, NATIONAL TECHNICAL
UNIVERSITY, MAESTRIA, V.I.KOOSHNIRENKO Ucrania ,
11/06/1992 ; NONEQULIBRIUM EMISSION OF SEMICONDUCTORS AT THE EXCLUSION OF FREE
CHARGE CURRIES, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO,
RUBAK Alexandro Ucrania ,
20/02/1992 ; AlGaAs/GaAs solar cell parameters investigation, NATIONAL TECHNICAL UNIVERSITY,
MAESTRIA, Alexsey. I. Taftai Ucrania ,
18/02/1992 ; Processes of defect transformation at AlGaAs LED degradation, ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA, DOCTORADO, Dzhamal Abdulaev Ucrania ,
16/03/1990 ; Investigation of electrophysical characteristics of injection AlGaAs heterolasers with different
doping levels in active layer, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA,
DOCTORADO, PUZIN I. Ucrania ,
23/02/1990 ; Deep center investigation in AlGaAs double heterostructures, NATIONAL TECHNICAL
UNIVERSITY, MAESTRIA, GNATENKO V.I. Ucrania ,
24/02/1989 ; Injection-enhanced transformation of AlGaAs LED emission, NATIONAL TECHNICAL
UNIVERSITY, MAESTRIA, FILIPCHENKO V.YA Ucrania ,
13/01/1989 ; Development of LPE double heterostructure technology for AlGaAs lasers, ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO, ZARECHNEV Alexandro Ucrania ,
20/02/1987 ; Deep center in AlGaAs LED¿s estimated by injection spectroscope methods, NATIONAL
TECHNICAL UNIVERSITY, MAESTRIA, GUSEV M.I. Ucrania ,
21/02/1986 ; Deep center transformation in Yellow GaP LED¿s, NATIONAL TECHNICAL UNIVERSITY,
MAESTRIA, STROCHKOV V.I. Ucrania ,
13/09/1985 ; Degradation and radiation-enhanced processes in light-emitting diodes, ACADEMICA NACIONAL
DE CIENCIAS DE UCRANIA, DOCTORADO, BERDINSKIKH T.G. Ucrania ,
15/03/1985 ; Investigation of aging and degradation mechanism of Cu2S-CdS solar cells, ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO, MIRZAZHANOV M.G. Ucrania ,
21/02/1985 ; ULTRASOUND TREATMENT OF LEDS BASED ON III V MATERIALS, NATIONAL
TECHNICAL UNIVERSITY, MAESTRIA, KORCHNAYA V.L. Ucrania ,
20/04/1984 ; TECHNOLOGY DEVELOPMENT OF ADVANCED CDSCUCL THIN FILM
PHOTORESISTORS AND MECHANISMS OF THEIR DEGRADATION, ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO, RAKHLIN M.YA. Ucrania ,
14/10/1983 ; MECHANISM OF AGING AND PHOTOCHEMICAL REACTIONS IN CDSCU
PHOTORESISTORS, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO,
BAIDOKHA L. Ucrania ,
14/06/1983 ; DEEP CENTER INVESTIGATION IN RED GAP LEDS, NATIONAL TECHNICAL
UNIVERSITY, MAESTRIA, SHMATOV A.A. Ucrania ,
25/02/1983 ; SMALL RADIATION DOSE EFFECTS IN SILICON HFDIODES, NATIONAL TECHNICAL
UNIVERSITY, MAESTRIA, DENISYUK V.I. Ucrania ,
22/02/1982 ; PROCESSES IN THE BASE OF DEGRADATION OF GAP LIGHTEMITTING DIODES,
ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO, KARABOEV
Abdukhalik Ucrania ,
19/02/1982 ; Investigation of the EL instability of GaP LED¿s, NATIONAL TECHNICAL UNIVERSITY,
MAESTRIA, BERDINSKIKH T.G. Ucrania ,
25/06/1991 ; PHOTOENHANCED PROCESSES AND CENTER INTERACTION IN ZNSE SINGLE
CRYSTALS, NATIONAL TECHNICAL UNIVERSITY, MAESTRIA, KRIVKO T.G Ucrania ,
20/02/1981 ; High frequency noise investigation in Si diodes, NATIONAL TECHNICAL UNIVERSITY,
MAESTRIA, LOSHIZKIY P.P. Ucrania ,
18/02/1981 ; PHOTODEGRADATION OF THE CDS CU CL CONGLOMERATED LAYER
PHOTORESISTORS, NATIONAL TECHNICAL UNIVERSITY, MAESTRIA, SYPKO S.A.
Ucrania ,
23/03/1979 ; STUDDING OF PHOTOELECTRIC PROPERTIES OF CDS CU CL THIN FILM
PHOTORESISTORS, NATIONAL TECHNICAL UNIVERSITY, MAESTRIA, BAIDOKHA L.N.
Ucrania ,
16/02/1979 ; Development of CdS:Cu:Cl thin film photoresistor technology, NATIONAL TECHNICAL
UNIVERSITY, MAESTRIA, RAKHLIN M. Ucrania ,
22/02/1977 ; INVESTIGATION OF THE BULK CHARGE FORMATION IN NBO DIELECTRIC FILMS,
NATIONAL TECHNICAL UNIVERSITY, MAESTRIA, ZAKHAREVICH E.G. Ucrania ,
INVESTIGACION CIENTIFICA Y TECNOLOGICA
ESTANCIAS DE
INVESTIGACION
02/2014 -
07/2014 ; ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA / INSTITUTO DE FISICA DE
MATERIA CONDENSADA, ENTIDADES EXTERNAS , Nanociencia, Ucrania
05/2010 -
10/2010 ; ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA / INSTITUTO DE FISICA DE
MATERIA CONDENSADA, ENTIDADES EXTERNAS , MODIFICACION DE LOS
ESPECTROS DE FOTOLUMINESCENCIA DE PUNTOS CUANTICOS BIOCONJUGADOS
CON ANTICUERPOS, Ucrania
06/2006 -
07/2006 ;
ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, ENTIDADES EXTERNAS , Exciton
dynamics in InAs quantum dot laser structures, Ucrania
09/2005 -
09/2005 ;
UNIVERSITY OF SOUTH FLORIDA, ENTIDADES EXTERNAS , Ultrasound investigation of
porous SiC, Estados Unidos
09/2005 -
09/2005 ;
ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, ENTIDADES EXTERNAS , PL
excitation of porous SiC, Ucrania
06/2005 -
07/2005 ;
ACADEMIA DE CIENCIAS DE MOSCU, ENTIDADES EXTERNAS , Structural investigation of
porous SiC, Federación Rusia
11/2004 -
12/2004 ;
TECHNION-ISRAEL INSTITUTE OF TECNOLOGY, ENTIDADES EXTERNAS , STM
investigation of Si quantum dots, Israel
08/2004 -
08/2004 ;
UNIVERSITY OF SOUTH FLORIDA, ENTIDADES EXTERNAS , Exciton emission scanning
spectroscopy, Estados Unidos
11/2003 -
12/2003 ;
UNIVERSITY OF SOUTH FLORIDA, ENTIDADES EXTERNAS , InAs quantum dor structures
scanning spectroscopy, Estados Unidos
01/2003 -
01/2003 ;
UNIVERSITY OF NEW MEXICO, ENTIDADES EXTERNAS , QD laser structures of new
generation, Estados Unidos
10/2002 -
10/2002 ;
UNIVERSIDAD DE GUADALAJARA / CENTRO UNIVERSITARIO DEL SUR., INST. DE EDU.
SUP. PUBLICAS , Curso de lectures "New directions in optoelectronics", México
03/2002 -
03/2002 ;
TECHNION-ISRAEL INSTITUTE OF TECNOLOGY, ENTIDADES EXTERNAS , Si and Ge
quantum dots production, Israel
08/2001 -
08/2001 ;
ACADEMIA ESLOVACA, ENTIDADES EXTERNAS , Porous II-V layer production and
investigation, República Checa
11/2000 -
12/2000 ;
TECHNION-ISRAEL INSTITUTE OF TECNOLOGY, ENTIDADES EXTERNAS , Si rich silicon
oxide, Israel
10/2000 -
10/2000 ;
UNIVERSITY OF NEW MEXICO, ENTIDADES EXTERNAS , InAs quantum dot laser structures,
Estados Unidos
09/1998 -
10/1998 ; , , Porous Si surface investigation, Polonia
11/1997 -
12/1997 ;
INSTITUTO DE CIENCIAS WEIZMANN, ENTIDADES EXTERNAS , Electoluminescence of
porous Si, Israel
10/1995 -
10/1995 ; , , LES and laser degradation, República Corea
02/1995 -
03/1995 ;
UNIVERSITÉ PARIS-DIDEROT PARIS 7, ENTIDADES EXTERNAS , LED degradation
mechanisms, Francia
06/1994 -
07/1994 ; , , Deep-level defects in MOCVD InxGa1-xAs layers, Polonia
04/1994 -
04/1994 ; , , Mechanisms of LED degradation, Estados Unidos
01/1993 -
02/1993 ; AT&T BELL LABORATORIES, ENTIDADES EXTERNAS , InGaAsP laser degradation, Canadá
10/1991 -
12/1991 ; , , LED and laser degradation mechanisms, Italia
03/1990 -
04/1990 ; , , Photosensitivity improvement of II-VI photoresistors and solar cells, Bulgaria
05/1989 -
06/1989 ; , , LED degradation mechanisms, República Checa
05/1980 -
06/1980 ;
ACADEMIA DE CIENCIAS DE MOSCU, ENTIDADES EXTERNAS , RARE ATOMS AS
GETTER IN II-VI MATERIALS, Bulgaria
PROYECTOS DE
INVESTIGACIÓN
02/2014 -
07/2014 ;
Proyecto de Investigación , CONACYT N000207604 ¿INVESTIGACIÓN LOS POZOS CUÁNTICOS
DE INXGAYAS/ALX GAYAS/GAAS CON PUNTOS CUÁNTICOS INAS EMBEBIDOS USO
MÉTODOS ÓPTICOS Y DIFRACCIÓN DE RAYOS X DE ALTA RESOLUCIÓN (HR-XRD)¿,
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPARTAMENTO DE FISICA
Empresas Participantes : INST FÍSICA DE SEMICONDUCTORES LA ACADEMIA UCRANIA
Investigadores Participantes : DRA. LYUDMILA SHCHERBYNA
Becarios Participantes : LEONARDO GABRIEL VEGA MACOTELA , RICARDO CISNEROS
TAMAYO , INGRI JASMIN GUERRERO MORENO
01/2013 -
12/2013 ;
Proyecto de Investigación , PROYECTO SIP 20130454¿INVESTIGACIÓN DE LOS FENÓMENOS
ÓPTICOS EN PUNTOS CUÁNTICOS DE LOS GRUPOS III-V Y II-VI EN FUNCIÓN DE LOS
FACTORES BIOFÍSICOS¿, INSTITUTO POLITECNICO NACIONAL / SECRETARIA DE
INVESTIGACION Y POSGRADO
Investigadores Participantes : DRA. TETYANA TORCHYNSKA
01/2012 -
12/2012 ;
Proyecto de Investigación , PROYECTO SIP 20120083 ¿INVESTIGACIÓN DE LOS FENÓMENOS
ÓPTICOS EN PUNTOS CUÁNTICOS DE LOS GRUPOS III-V Y II-VI EN FUNCIÓN DE LOS
FACTORES BIOFÍSICOS¿, INSTITUTO POLITECNICO NACIONAL / SECRETARIA DE
INVESTIGACION Y POSGRADO
Investigadores Participantes : DRA. TETYANA TORCHYNSKA
04/2011 -
03/2014 ;
Proyecto de Investigación , CONACYT 000000000130387 "PROPIEDADES OPTICOS DE LOS
PUNTOS CUANTICOS DE SEMICONDUCTORES DE GRUPOS III-V Y II-VI Y IMPACTO DEL
ESTRES ELASTICO A PUNTOS CUANTICOS EMBEBIDOS EN POZOS CUANTICOS",
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES
Investigadores Participantes : DR. JOSE LUIS CASAS ESPINOLA , DR.AARON ISRAEL DIAZ
CANO , DR.E. VELAZQUEZ LOZADA , DR.A. VIVAS HERNANDEZ , DRA. JANNA DOUDA
01/2011 -
12/2011 ;
Proyecto de Investigación , PROYECTO SIP 20110516 "INVESTIGACIÓN Y SIMULACIÓN
NUMÉRICA DE LA INTERACCIÓN EXCITON-POLARITON EN LAS SISTEMAS
NANOCRISTALINOS DE SIC"., INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /
DEPARTAMENTO DE FISICA
05/2010 -
10/2010 ;
Proyecto de Investigación , CONACYT 000000000131184 "MODIFICACIÓN DE LOS
PROPIEDADES ÓPTICAS DE LOS PUNTOS CUÁNTICOS DE CDSE/ZNS EN PROCESOS DE
BIOCONJUGACION CON ANTICUERPOS ", INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y
MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES
Empresas Participantes : INSTITUTO DE FISCA DE SEMICONDUTORES DE NASU
Investigadores Participantes : DRA TETYANA TORCHYNSKA , DRA. LYUDMYLA
SHCHERBYNA
01/2010 -
12/2010 ;
Proyecto de Investigación , PROYECTO SIP 20100103 ¿TRANSFORMACION DE LAS
PROPIEDADES ÓPTICAS DE PUNTOS CUANTICOS INAS/INGAAS Y CDSE/ZNS EN LOS
PROCESOS DIFERENTES, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS
DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE
CIENCIAS DE MATERIALES
Investigadores Participantes : T.TORCHYNSKA Becarios Participantes : FRANCISCO BECERRIL ESPINOSA , ALEJANDRO VIVAS
HERNANDEZ , MIGUEL MORALES RODRIGUEZ , AARON ISRAEL DIAZ CANO
01/2009 -
12/2009 ;
Proyecto de Investigación , PROYECTO SIP 20090113 ¿MODIFICACION DE LAS PROPIEDADES
ÓPTICAS DE PUNTOS CUNTICOS CDSE/ZNS EN LOS PROCESOS DE BIOCONJUGACION¿DE
SIC¿, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL
SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE
MATERIALES
07/2008 -
12/2011 ;
Proyecto de Investigación , CONACYT 00058358 INVESTIGACION DE LAS PROPIEDADES
OPTICAS EN ESTRUCTURAS CON NANOCRYSTALES Y PUNTOS CUANTICOS DE
SEMICONDUCTORES DEL GRUPO IV Y III-V PARA DISPOSITIVOS DE NUEVA
HENERACION., INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL
SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPARTAMENTO DE
FISICA
Investigadores Participantes : DRA. JANNA DOUDA , DRA. TETYANA TORCHYNSKA , DR.
JOSE L UIS CASAS ESPINOLA
01/2008 -
12/2008 ;
Proyecto de Investigación , PROYECTO SIP- IPN N 20080177, "PROPIEDADES OPTICAS Y
ESTRUCTURALES DE LOS NANOCRISTALES DE SIC", INSTITUTO POLITECNICO NACIONAL
/ UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y
MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES
Investigadores Participantes : DRA. T. TORCHYNSKA Becarios Participantes : AARON ISRAEL DIAS CANO , YORGE ARTURO YESCAS
HERNANDEZ
07/2007 -
07/2010 ;
Proyecto de Investigación , PROYECTO CONACYT EN PROGRAMA CIENCIA BASICA N 58358,
INVESTIGACION DE LAS PROPIEDADES OPTICAS EN ESTRUCTURAS CON
NANOCRISTALES Y PUNTOS CUANTICOS DE SEMICONDUCTORES DEL GRUPO IV Y III-V
PARA DISPOSITIVOS DE NUEVA GENERACION,, INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y
MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES
Empresas Participantes : ESIME-IPN
Investigadores Participantes : DR. ERICK VELAZQUEZ LOZADA , DR. GEORGIY POLUPAN ,
DR. JOSE LUIS CASAS ESPINOLA
Becarios Participantes : M.C. ANNA LILIA QUINTOZ VAZQUEZ , DRA. KIRA
KHMELNITSKAYA , AARON ISRAEL DIAZ CANO , ALEJANDRO VIVAS HERNANDEZ,
01/2007 -
12/2007 ;
Proyecto de Investigación , PROYECTO SIIP- IPN N 20071013 "DEPENDENCIA PROPIEDADES
OPTICOS DE PUNTOS CUNATICOS DE INAS SOBRE LA TEMPERATURA DE CU
CRECIMIENTO EN LAS POZAS QUANTICOS DE INGAAS/GAAS, INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES
Investigadores Participantes : J. LUIS CASAS ESPINOLA , T.TORCHYNSKA
Becarios Participantes : AARON ISRAEL DIAZ CANO , ERIK VELAZQUEZ LOZADA
11/2006 -
12/2009 ;
Proyecto de Investigación , PROYECTO CONACYT MEXICO-UCRANIA, INVESTIGACION DE
FOTOLUMINESCENCIA Y RESONANCIA PARAMAGNETICA EN ESTRUCTURAS DE SIC
POROSO Y NANOCRISTALINOS, INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /
DEPTO. DE CIENCIAS DE MATERIALES
Empresas Participantes : INSTITUTO DE FISICA DE SEMICONDUCTORES DE UCRANIA
Investigadores Participantes : DRA. L. SHCHERBYNA
Becarios Participantes : JORGE YESCAS HERNANDEZ
11/2006 -
11/2009 ;
Proyecto de Investigación , PROYECTO CONACYT MEXICO-ISRAEL, ESTUDIO
CPOMPARATIVO DE EFECTOS CUANTICOS EN NANOCRISTALES SEMICONDUCTORES DE
MATERIALES DEL GRUPO IV Y II-VI, INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /
DEPTO. DE MATEMATICAS
Empresas Participantes : HEBREW UNIVERSITY OF JERUSALEM ISRAEL
Investigadores Participantes : DR. Y. GOLDSTEIN
Becarios Participantes : ALEJANDRO VIVAS HERNANDEZ , ANNA LILIA QUINTOS VAZQUEZ
09/2006 -
09/2009 ;
Proyecto de Investigación , PROYECTO INTERNACIONAL MEXICO, CONACYT-NSF, USA,
ULTRASOUND STIMULATED REACTIONS WITH QUANTUM DOTS FOR LUMINESCENT
BIOMARKERS, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL
SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE
MATERIALES
Empresas Participantes : UNIVERSIDAD FLORIDA DEL SUR
Investigadores Participantes : DR. S. OSTAPENKO Becarios Participantes : ANNA LILIA QUINTOS VAZQUEZ
01/2006 -
12/2006 ;
Proyecto de Investigación , PROYECTO SIP- IPN CON N20060164, "PROPIEDADES OPTICAS DE
PUNTOS CUANTICOS DE INAS EMBEBIDAS EN POZOS CUANTICOS DE INGAAS/GAAS CON
DIFERENTE CONTENIDO DE IN, INSTITUTO POLITECNICO NACIONAL / UNIDADES
ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /
DEPTO. DE CIENCIAS DE MATERIALES
Investigadores Participantes : T.V.TORCHYNSKA Becarios Participantes : ANNA LILIA QUINTOS VAZQUEZ , AARON ISRAEL DIAZ CANO ,
ERIK VELAZQUEZ LOZADA , JOSE LUIS CASAS ESPINOLA
01/2005 -
12/2005 ;
Proyecto de Investigación , PROYECTO SIP- IPN CON N20050328 "INVESTIGACION DE LAS
PROPIEDADES OPTICAS DE SI EMBEBIDOS EN SILICIO AMORFO", INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES
Investigadores Participantes : T. TORCHYNSKA Becarios Participantes : ANNA LILIA QUINTOS VAZQUEZ , AARON ISRAEL DIAZ CANO
01/2004 -
12/2004 ;
Proyecto de Investigación , PROYECTO SIP- IPN CON N 20040404 "INVESTIGACION OPTICA
NO DESTRUCTIVA DE CAPAS DE SIC PARA DISPOSITIVOS OPTOELECTRONICOS",
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES
Investigadores Participantes : T.TORCHYNSKA Becarios Participantes : AARON ISRAEL DIAZ CANO
12/2003 -
06/2006 ;
Proyecto de Investigación , PROYECTO INVESTIGACION EN PROGRAMA CONACYT MEXICO-
NSF, EEUU, N U42436-Y"CHARACTERIZACION ESPACIAL DE POZOS DE SIC
NANOPOROSOS, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE
NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE
CIENCIAS DE MATERIALES
Empresas Participantes : UNIVERSIDAD FLORIDA SUR TAMPA EEUU
Investigadores Participantes : DR. GEORGIY POLUPAN , DR. S. OSTAPENKO
Becarios Participantes : CEZAR AUGUSTO REAL RAMIRES
01/2003 -
12/2003 ;
Proyecto de Investigación , PROYECTO SIP- IPN CON N 20030320 "INVESTIGACION OPTICA DE
NANOCRISTALES DE SI Y GE EMBEBIDOS EN SIO2", INSTITUTO POLITECNICO NACIONAL
/ UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y
MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES
Investigadores Participantes : T.TORCHYNSKA Becarios Participantes : ALEJANDRO VIVAS HERNANDEZ
09/2002 -
09/2005 ;
Proyecto de Investigación , PROYECTO COOPERACION BILATERAL CONACYT MEXICO-NSF,
EEUU, CARACTERIZACION ESPECIAL RESUELTA DE CAPAS NANOPOROSAS DE SIC,
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES
Empresas Participantes : UNIVERSIDAD DE FLORIDA SUR
Investigadores Participantes : DR. SERGEI OSTAPENKO , DR. STEVE SADDOW
01/2002 -
12/2002 ;
Proyecto de Investigación , PROYECTO SIP- IPN CON N 20020926 "{INVESTIGACION DE LA
ESPECTROSCOPIA DE ESTADOS MULTI EXCITADOS EN PUNTOS CUANTICOS DE
SEMICONDUCTORES DEL GRUPO III-V Y SILICIO, INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y
MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES
Investigadores Participantes : T.TORCHYNSKA Becarios Participantes : HILDA MARGARITA ALFARO LOPEZ , JOSE LUIS CASAS ESPINOLA
09/2001 -
09/2003 ;
Proyecto de Investigación , CREACION Y INVESTIGACION DE LOS ESTRUCTURAS CON SI
NANORISTALES, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE
NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE
CIENCIAS DE MATERIALES
Empresas Participantes : HEBREA UNIVERSIDAD DE JERUSALEN ISRAEL
Investigadores Participantes : PROF. YEHUDA GOLDSTEIN
01/2001 -
12/2001 ;
Proyecto de Investigación , PROYECTO SIP- IPN CON N 20010563" EFECTO BALISTICO EN LA
FOTOLUMINESCENCIA ROJA DE ALAMBRES DE SILICIO, INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES
Investigadores Participantes : T. TORCHYNSKA Becarios Participantes : ALEJANDRO VIVAS HERNANDEZ , FRANCISCO BESERRIL
12/2000 -
12/2003 ;
Proyecto de Investigación , PROJECT OF CONACYT EN PROGRAMA CIENCIAS BASICOS N
33427-U ¿ CREACION Y INVESTIGACION ESTRUCTURAS SEMICONDUCTORES BAJO
DOMENSIONALIDAD CON EMISION DE LUZ, INSTITUTO POLITECNICO NACIONAL /
UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y
MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES
Empresas Participantes : ESIME-IPN
Investigadores Participantes : DR. GEORGIY POLUPAN Becarios Participantes : F.BECERRIL ESPINOZA
09/2000 -
09/2002 ;
Proyecto de Investigación , INVESTIGACION TEORICA Y EXPERIMENTAL PROPIEDADES
OPTPELECTRONICOS DE ESTRUCTURAS INAS-GAAS CON PUNTOS CUANTICOS,
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES
Empresas Participantes : CHTM AT UNIVERSIDAD DE NUEVO MEXICO USA
Investigadores Participantes : PROF. P. ELISEEV
09/2000 -
09/2002 ;
Proyecto de Investigación , TECHNOLOGIA Y INVESTIGACION DE PROPIEDADES OPTICAS
DE SOLICIONES SOLIDOS TERNARIAS INGAP PARA APLICACIONES FOTOELECTRONICAS,
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES
Empresas Participantes : INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS
Investigadores Participantes : DR. DUSHAN NAKHOVICA
09/2000 -
09/2003 ;
Proyecto de Investigación , "INVESTIGACION DE FOTOLUMINESCENCIA Y SU EXCITACION
EN ESTRUCTURAS DE SI BAJO DIMENSIONALIDAD, INSTITUTO POLITECNICO NACIONAL
/ UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y
MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES
Empresas Participantes : INSTITUTO FISICA DE SEMICONDUCTORES UCRANIA
Investigadores Participantes : DRA. LYDMULA SHCHERBUNA
Becarios Participantes : FRANCISCO BESERRIL ESPINOZA
01/1999 -
12/1999 ;
Proyecto de Investigación , PROYECTO SIP- IPN CON N 990054 " MECANISMOS DE
FOTOLUMINESCENCIA Y NATURALEZA DE LOS CENTROS DE LUMINESCENCIA EN
SILICIO POROSO, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE
NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE
CIENCIAS DE MATERIALES
Investigadores Participantes : T, TORCHYNSKA Becarios Participantes : FRANCISCO BECERRIL ESPINOSA
02/1998 -
12/1999 ;
Proyecto de Investigación , Investigation of the defect formation processes under the electron and high-
frequency wave irradiation in GaAs solar cells for space applications, ACADEMIA DE CIENCIAS DE
MOSCU
Empresas Participantes : INSTITUTE OF MATERIAL SCIENCES OF HUNGARY
Investigadores Participantes : DR. ZHOLT HORVARD
01/1998 -
12/1999 ;
Proyecto de Investigación , Modeling, Creation and Investigation of Silicon quantum structure¿.,
ACADEMIA DE CIENCIAS DE MOSCU
Empresas Participantes : RAKAH INSTITUTO DE FISICA JERUSALEN ISRAEL
Investigadores Participantes : PROF. YEHUDA GOLDSTEIN
01/1997 -
12/1997 ;
Proyecto de Investigación , Analyses of Current status and Studding of problems of semiconductor solar
cells creation for space gelioenergetics in Ukraine and in the World¿, ACADEMIA DE CIENCIAS DE
MOSCU
Empresas Participantes : NATIONAL SPACE AGENCY OF UKRAINE
12/1996 -
12/1998 ;
Proyecto de Investigación , Theoretical Modeling and Development of Technology of high energy
cascade III-V solar cells based on multilayer heterostructures of GaAs and their solid solution,
ACADEMIA DE CIENCIAS DE MOSCU
02/1996 -
12/1998 ;
Proyecto de Investigación , Investigation of silicon nanocrystals photoluminescence and its
applications¿., ACADEMIA DE CIENCIAS DE MOSCU
Empresas Participantes : HEBREW UNIVERSITY OF JERUSALEM ISRAEL
Investigadores Participantes : PROF. YEHUDA GOLDSTEIN
01/1995 -
12/1996 ;
Proyecto de Investigación , ¿Investigation of the mechanism of radiative recombination in porous
silicon - new quantum confinement structures, and studies of the possibility applications for LED new
generation¿, ACADEMIA DE CIENCIAS DE MOSCU
Empresas Participantes : NATIONAL TECHNICAL UNIVERSITY OF UKRAINE
Investigadores Participantes : DR. A. SHMUREVA
01/1995 -
12/1996 ;
Proyecto de Investigación , Investigation of elementary processes of thermal and stimulated diffusion of
atoms and defects transformation and their reactions in semiconductors, ACADEMIA DE CIENCIAS
DE MOSCU
Empresas Participantes : INTERNATIONAL SCIENCE FAUNDATION USA
01/1995 -
12/1997 ;
Proyecto de Investigación , Development technology and creation of high energy and radiation proved
solar cells based on III-V materials for photoelectric batteries of space applications¿., ACADEMIA DE
CIENCIAS DE MOSCU
Empresas Participantes : NATIONAL SPACE AGENCY OF UKRAINE
02/1994 -
12/1995 ;
Proyecto de Investigación , Defects and defect-related recombination processes in semiconductors¿.,
ACADEMIA DE CIENCIAS DE MOSCU
Empresas Participantes : INSTITUTO OF PHYSICS POLISH ACADEMY OF SCIENCE
Investigadores Participantes : PROF. MAREK GODLEVSKII
01/1994 -
12/1995 ;
Proyecto de Investigación , Development of technology of multiplayer bright AlGaAs/GaAs light-
emitting heterostructures and creation of LED and lasers on their base, ACADEMIA DE CIENCIAS DE
MOSCU
Empresas Participantes : SCIENTIFIC-INDUSTRIAL ENTERPRISE KARAT
Investigadores Participantes : DR. D. KORBUTYAK
01/1993 -
12/1994 ;
Proyecto de Investigación , Development of the physic-technological base for creation of new material
and semiconductor structures for optoelectronic devices of new generation, ACADEMIA DE CIENCIAS
DE MOSCU
Empresas Participantes : NATIONAL SPACE AGENCY OF UKRAINE
01/1993 -
12/1993 ;
Proyecto de Investigación , Ukrainian - Canadian Industrial Co-operation project, ACADEMIA DE
CIENCIAS DE MOSCU
Empresas Participantes : BELL NOTHERN RESEARCH OTTAVA CANADA
Investigadores Participantes : DR. CARLA MINER
03/1992 -
12/1992 ;
Proyecto de Investigación , National State Space Program Analysis, ACADEMIA DE CIENCIAS DE
MOSCU
Empresas Participantes : NATIONAL SPACE AGENCY OF UKRAINE
01/1992 -
01/1994 ;
Proyecto de Investigación , Porous silicon research by Auger, SIMS, FTIR and X-ray photoemission
methods¿, ACADEMIA DE CIENCIAS DE MOSCU
02/1990 -
12/1995 ;
Proyecto de Investigación , Development of the effective photodiodes and solar cells ob the base III-V
semiconductor compounds, as well as thermo convectors, ACADEMIA DE CIENCIAS DE MOSCU
01/1988 -
12/1989 ;
Proyecto de Investigación , Investigation of physical factors, limited the stability of GaP: N and AlGaAs
LED¿s and development of the recommendation for decreasing the size of the light-emitting crystals and
increasing the lifetime, ACADEMIA DE CIENCIAS DE MOSCU
Empresas Participantes : SCIENTIFIC-INDUSTRIAL ENTERPRISE START MOSCOW
Investigadores Participantes : L. KOGAN
01/1988 -
12/1989 ;
Proyecto de Investigación , Electrical, Luminescence and structural investigation of light emitting
structure based on GaAs, ACADEMIA DE CIENCIAS DE MOSCU
Empresas Participantes : SCIENTIFIC-RESEARCH INSTITUTE MATERIALS
Investigadores Participantes : DR. I. DIROCHKA
01/1986 -
12/1990 ;
Proyecto de Investigación , No equilibrium electronic and electronic-atomic processes in materials for
electronic engineering and their technical applications, ACADEMIA DE CIENCIAS DE MOSCU
01/1986 -
12/1987 ;
Proyecto de Investigación , Investigation of the degradation mechanism for LED based on III-V
materials¿, ACADEMIA DE CIENCIAS DE MOSCU
Empresas Participantes : SCIENTIFIC-INDUSTRIAL ENTERPRISE START MOSCOW
Investigadores Participantes : DR. L. KOGAN
01/1984 -
12/1986 ;
Proyecto de Investigación , Investigation of electro physical characteristics of laser heterostructures
during degradation¿, ACADEMIA DE CIENCIAS DE MOSCU
Empresas Participantes : SCIENTIFIC-INDUSTRIAL ENTERPRISE VOLNA RUSSIA
Investigadores Participantes : DR. L. FILIPCHENKO
01/1982 -
12/1983 ;
Proyecto de Investigación , Investigation of physic-technological rezones of destruction of opt
electronic linear scale, ACADEMIA DE CIENCIAS DE MOSCU
Empresas Participantes : SCIENTIFIC-INDUSTRIAL ENTERPRISE MIONGEORGIA
Investigadores Participantes : DR. S. ASHKINAZI
01/1981 -
12/1982 ;
Proyecto de Investigación , INVESTIGATION OF NOISE OF HF DIODES BY THE CAPACITANCE
SPECTROSCOPY METHODS¿., ACADEMIA DE CIENCIAS DE MOSCU
Empresas Participantes : SCIENTIFIC-INDUSTRIAL ENTERPRISE M5191 UKRAINE
Investigadores Participantes : DR. L. SHCHERBUNA
01/1981 -
12/1985 ;
Proyecto de Investigación , Complex physic - chemical investigation of semiconductor materials in
connection with its technology and treatments, ACADEMIA DE CIENCIAS DE MOSCU
01/1981 -
12/1985 ;
Proyecto de Investigación , Research of no equilibrium and optical processes in wide-band-gap
semiconductors and semiconductor devices, as well as their industrial applications, ACADEMIA DE
CIENCIAS DE MOSCU
01/1980 -
12/1981 ;
Proyecto de Investigación , INVESTIGATION OF AGING AND DEGRADATION PROCESSES OF
PHOTO RESISTORS BASED ON CD: CU: CL CONGLOMERATED LAYERS, ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA
Empresas Participantes : SCIENTIFIC-INDUSTRIAL ENTERPRISE ELECTRODEVICES
Investigadores Participantes : DR. A. FILIPCHENKO
01/1976 -
12/1980 ;
Proyecto de Investigación , Photoelectric and Optical Phenomena in Semiconductors, ACADEMIA DE
CIENCIAS DE MOSCU
01/1974 -
12/1976 ;
Proyecto de Investigación , Theoretical and Experimental Investigation of No equilibrium Processes in
Semiconductors, stimulated by the light, electrical field and deformation., ACADEMIA DE CIENCIAS
DE MOSCU
GRUPOS DE
INVESTIGACION
08/1985 ; Defectos profundos en materiales de semiconductores y dispositivas, ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA ,T.V.Torchynska* , M.C. LARISA KHOMENKOVA , M.C. LUDMILA
SHCHERBINA, , M.C. V. GNATENCO ,ENTIDADES EXTERNAS
09/1988 ; Interacciones ultrasonido con solidos, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA
,T.V.Torchynska* , M.C. MIKHAIL LISYANSKII, , M.C. SERGEI OSTAPENKO , M.C.
VALENTINA KORCHNAYA ,ENTIDADES EXTERNAS
09/1990 ; Reacciones de defectos en semiconductores estimulados por injeccion de portadores, ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA ,T. V. Torchynska* , M.C. I. PUZIN , M.C. VLADIMIR
KUSHNIRENKO , M.C.ALEXAMDRO SENCHILO, ,ENTIDADES EXTERNAS
09/1985 ; Defectos en semiconductors creados por radiacion, ACADEMICA NACIONAL DE CIENCIAS DE
UCRANIA ,T. V. Torchynska* , M. C. A. SENCHILO , M.C. ALEXANDRO RUBAK , M.C. VITALII
GNATENKO, ,ENTIDADES EXTERNAS
09/1978 ; Reacciones en solidos estimulados por recombinacion, ACADEMICA NACIONAL DE CIENCIAS
DE UCRANIA ,T.V.Torchynska* , M.C. IRINA MARKEVICH, , M.C. LARISA KHOMENKOVA ,
M.C. NADEZHDA KOESUNSKA ,ENTIDADES EXTERNAS
09/1981 ; Fenomenos fotoelectricas en p-n transiciones de materiales II-VI, ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA ,T.V.Torchynska* , M. C. D. ABDULAEV , M.C. HALIK KAROBAEV, ,
M.C. MAKHMUD MIRZAZHANOV ,ENTIDADES EXTERNAS
09/1980 ; Mecanismos de degradacion de emisores de luz a base de semiconductores de grupo III-V,
ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA ,Dra. T. Torchynska* , M.C.
ALEJANDRO RUBAK , M.C. GZAMAL ABDULAEV , M.C. TETYANA BERDINSKIKH, , M.C.
VITALII GNATENKO ,ENTIDADES EXTERNAS
03/1999 ; Propiedades opticos en estructuras de bajo dimensionalidad de (Si and Ge) y de InAs, INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES ,T. V.
Torchynska* , DR. J. L. CASAS ESPINOLA , ING. ANNA LILIA QUINTOS VASQUEZ , ING.
INGRI JAZMIN GUERRERO MORENO , M.C. FRANCISCO BESERRIL ESPINOZA ,INST. DE
EDU. SUP. PUBLICAS
08/2002 ; Emision de luz en estructuras de laseres con puntos cuanticos de semiconductores de grupo III-V,
INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /
ESCUELA SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA (UNIDAD ZACATENCO) /
DEPARTAMENTO DE INGENIERIA DE TELECOMUNICACIONES ,Dra. T. Torchynska* , DR.
ALEJANDRO VIVAS HERNANDEZ , DR. ERIK VELAZQUEZ LOSADA , M. C. ALEJANDRO
ITURRI HINOJOSA ,INST. DE EDU. SUP. PUBLICAS
08/2004 ; Characteriazacion optica y estructural de estructuras con nanocristales de SiC, INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES ,Dra. T.
Torchynska* , DR. AARON ISRAEL DIAZ CANO , ING. JORGE YESCAS HERNANDEZ , M.C.
MIGUEL MORALES RODRIGES, ,INST. DE EDU. SUP. PUBLICAS
10/2006 ; Propiedades opticas de puntos cuanticos CdSe-ZnS bioconjugados, INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL
INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS
BASICAS ,Dra. Tetyana Torchynska , DRA. JANNA DOUDA , ING. CÉSAR RAYMUNDO
GONZÁLEZ VARGAS , ING. ISIS CHETZYL BALLARDO RODRÍGUEZ , M.C ANNA LILIA
QUINTOS VAZQUEZ ,INST. DE EDU. SUP. PUBLICAS
10/2006 ; Programa de Maistria en Tecnologia avanzada en Electromagnetizmo y Fotonica (PNP
CONACYT), INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL
SUPERIOR / UNIDAD PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y
TECNOLOGIAS AVANZADAS , * , T.V. TORCHYNSKA - COORDINADOR DE LINIA
FOTONICA ,INST. DE EDU. SUP. PUBLICAS
09/2001 ; Programa Doctorado Fisica de Materiales (esta en PNP CONACYT), INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE
FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES ,T.Torchynska* , T,
TORCHYNSKA 'CORDINACIO NANOCIENCIAS SEMICONDUCT ,INST. DE EDU. SUP.
PUBLICAS
08/2011 ; Propiedades opticas y estructurales de las nanocristales de ZnO, INSTITUTO POLITECNICO
NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL
INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS
BASICAS ,Dra. Tetyana Torchynska , BRAHIM EL FELALI , BRENDA PEREZ MILAN , DR.
AARON ISRAEL DIAZ CASO , DR. ERICK VELAZQUEZ LOZADA , M.EN C. CETCILE
BALLARDO RODRIGUEZ ,INST. DE EDU. SUP. PUBLICAS
08/2011 ; propiedades opticas de InAs puntos cuanticos en estructuras de laseres, INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA
SUPERIOR DE FISICA Y MATEMATICAS / DEPARTAMENTO DE FISICA ,Dra. Tetyana
Torchynska* , . M.EN C. RICARDO CISNEROS TAMAYO , DR. JOSE LUIS CASAS ESPINOLA ,
M.EN C. INGRI JAZMÍN GUERRERO MORENO , M.EN C. LEONARDO GABRIEL VEGA
MACOTELA ,INST. DE EDU. SUP. PUBLICAS
01/2009 ; Propiedades opticas de puntos cuanticos CdSeTe/ZnS bioconjugados con anticuerpos, INSTITUTO
POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD
PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS /
CIENCIAS BASICAS ,Dra. Tetyana Torchynska* , DR. AARON DIAZ CANO , DRA. JANNA
DOUDA , M.EN C, ANNA LILIA QUINTOS VAZQUEZ , M.EN C. ANTONIA JARAMILLA ,INST.
DE EDU. SUP. PUBLICAS
;DESARROLLOS
TECNOLOGICOS
01/1993 -
04/1993 ;
UKRAINIAN CANADIAN INDUSTRIAL COOPERATION, ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA ,BELL NOTHERN RESEARCH, OTTAVA, CANADA T.
TORCHYNSKA
01/1988 -
01/1993 ;
Method of quality control for photoelectric devices based on CdS - Cu2S, ACADEMICA
NACIONAL DE CIENCIAS DE UCRANIA ,SCIENTIFIC-INDUSTRIAL ENTERPRISE
¿KVARZ¿ (CHERNOVZU, UKRAINE) T.V.TORCHYNSKAYA, I.V.MARKEVICH,
N.E.KORSUNSKAYA,
01/1988 -
01/1993 ;
Method of semiconductor light-emitting diode produce, ACADEMICA NACIONAL DE CIENCIAS
DE UCRANIA ,SCIENTIFIC-INDUSTRIAL ENTERPRISE ¿START¿ (MOSCOW, RUSSIA)
T.V.TORCHYNSKAYA, ZH.A.ABDULAEV
01/1988 -
01/1993 ;
Ultrasound treating method for semiconductor heterostructures, ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA ,SCIENTIFIC-INDUSTRIAL ENTERPRISE T-4468 (SARATOV,
RUSSIA) T.V.TORCHYNSKAYA, S.S.OSTAPENKO, V.L.KORCHNAYA
01/1988 -
01/1993 ;
Method of light-emitting diode reliability improvement, ACADEMICA NACIONAL DE CIENCIAS
DE UCRANIA ,OPEN STOK COMPANY ¿CHISTUE METALS¿ (SVETLOVODSK, UKRAINE)
T.V.TORCHYNSKAYA, A.F.KARABOEV
01/1987 -
01/1992 ;
Method of In - Ga - As light-emitting diode creation, ACADEMICA NACIONAL DE CIENCIAS DE
UCRANIA ,OPEN STOK COMPANY ¿CHISTUE METALS¿ (SVETLOVODSK, UKRAINE)
T.V.TORCHYNSKAYA, T.G.BERDINSKIKH
01/1985 -
01/1990 ;
TREATING METHOD FOR CDS - CU2S PHOTOELEMENTS WITH CU CONTACT,
ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA ,SCIENTIFIC-INDUSTRIAL
ENTERPRISE ¿KVARZ¿ (CHERNOVZU, UKRAINE) T.V.TORCHYNSKAYA,
M.A.MIRZAZHANOV, A.I.MARCHENKO,
01/1984 -
01/1989 ;
Method of reliability improvement for CdS - Cu2S photoelements, ACADEMICA NACIONAL DE
CIENCIAS DE UCRANIA ,SCIENTIFIC-INDUSTRIAL ENTERPRISE ¿ELECTROPRIBOR¿
(KIEV, UKRAINE) T.V.TORCHYNSKAYA, M.A.MIRZAZHANOV
01/1983 -
01/1988 ;
THE SELECTION OF ACTIVATION METHODS FOR II-VI THIN FILM MATERIALS,
ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA ,SCIENTIFIC-INDUSTRIAL
ENTERPRISE ¿ELECTROPRIBOR¿ (KIEV, UKRAINE) T.V.TORCHYNSKAYA,
L.N.BAIDOKHA, M.YA.RAKHLIN
01/1982 -
01/1987 ;
Method of the photoresistor material creation, ACADEMICA NACIONAL DE CIENCIAS DE
UCRANIA ,SCIENTIFIC-INDUSTRIAL ENTERPRISE ¿ELECTROPRIBOR¿ (KIEV,
UKRAINE) T.V.TORCHYNSKAYA, L.N.BAIDOKHA, M. RAKHLIN
01/1982 -
01/1987 ;
Method of the photoresistor layer creation, ACADEMICA NACIONAL DE CIENCIAS DE
UCRANIA ,SCIENTIFIC-INDUSTRIAL ENTERPRISE ¿ELECTROPRIBOR¿ (KIEV,
UKRAINE) T.V.TORCHYNSKAYA, L.N.BAIDOKHA, L.F.ZHAROVSKII, M.
01/1982 -
01/1987 ;
Method of noise HF diode selection, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA
,SCIENTIFIC-INDUSTRIAL ENTERPRISE M-5191 (UKRAINE) P.P.LOSHIZKII,
T.V.TORCHYNSKAYA, L.V.SCHERBINA,
01/1982 -
01/1987 ;
Method of semiconductor material layer creation, ACADEMICA NACIONAL DE CIENCIAS DE
UCRANIA ,CENTRAL DESIGN ENTERPRISE ¿RITM¿ (CHERNOVZU, UKRAINE)
T.V.TORCHYNSKAYA, L.N.BAIDOKHA, M.RAKHLIN
01/1981 -
01/1986 ;
Method of semiconductor device quality control, ACADEMICA NACIONAL DE CIENCIAS DE
UCRANIA ,SCIENTIFIC-INDUSTRIAL ENTERPRISE ¿ELECTROPRIBOR¿ (KIEV,
UKRAINE) T.V.TORCHYNSKAYA, L.N.BAIDOKHA, M.A.MIRSAZANOV
;APOYOS CONACYT
02/2014 -
07/2014 ; 000207604, Proyecto Científico , REPATRIACIÓN/CONSOLIDACION INS
04/2011 -
03/2014 ; 00000130387, Proyecto Científico , FONDO CIENCIA BASICA
05/2010 -
10/2010 ; 00000131184, Proyecto Científico , APOYOS ESPECIALES
01/2010 -
12/2014 ; 22015, Formación Académica , ESTIMULO SNI
09/2007 -
09/2010 ; PROY. 58358, Proyecto Científico , FONDO CIENCIA BASICA
11/2006 -
12/2009 ; MEX-ISRAEL, Proyecto Científico , APOYOS ESPECIALES
11/2006 -
12/2008 ; MEX-UCRANIA, Proyecto Científico , APOYOS ESPECIALES
01/2005 -
12/2009 ; 22015, Formación Académica , ESTIMULO SNI
12/2003 -
06/2006 ; U42436, Proyecto Científico , FONDO CIENCIA BASICA
09/2003 -
09/2005 ; MEX-EE.UU., Proyecto Científico , APOYOS ESPECIALES
06/2001 -
12/2004 ; 22015, Formación Académica , ESTIMULO SNI
01/2001 -
12/2003 ; MEX-R.CHECA, Proyecto Científico , APOYOS ESPECIALES
01/2001 -
12/2003 ; MEX-UCRANIA, Proyecto Científico , APOYOS ESPECIALES
01/2001 -
12/2003 ; MEX. ISRAEL, Proyecto Científico , APOYOS ESPECIALES
10/2000 -
12/2003 ; 33427-U, Proyecto Científico , FONDO CIENCIA BASICA
01/2000 -
12/2002 ; MEX-USA, Proyecto Científico , APOYOS ESPECIALES
02/1999 -
01/2001 ; 990051, Formación Académica , CATEDRAS PATRIMONIALES
PROPIEDAD INTELECTUAL
;PATENTES
REGISTRADAS EN
MEXICO
; METHOD OF THE PHOTORESISTOR MATERIAL CREATION, . N 1055291, , , En explotación
Comercial , ,
; METHOD OF THE PHOTORESISTOR LAYER CREATION, . N 1119561, , , En explotación
Comercial , ,
; METHOD OF SEMICONDUCTOR MATERIAL LAYER CREATION, N 1050483, , , En
explotación Comercial , ,
; METHOD OF NOISE HF DIODE SELECTION, N 1100586, , , En explotación Comercial , ,
; METHOD OF RELIABILITY IMPROVEMENT FOR CDS - CU2S PHOTOELEMENTS, N
1241953, , , En explotación Comercial , ,
; METHOD OF IN - GA - AS LIGHT-EMITTING DIODE CREATION, N 1295956, , , En
explotación Comercial , ,
; TREATING METHOD FOR CDS - CU2S PHOTOELEMENTS WITH CU CONTACT, 1322935, ,
, En explotación Comercial , ,
; TREATING METHOD FOR SEMICONDUCTOR DEVICES, N 1356890, , , En explotación
Comercial , ,
; METHOD OF SEMICONDUCTOR LIGHT-EMITTING DIODE PRODUCE, N 1628783, , , En
explotación Comercial , ,
; METHOD OF LIGHT-EMITTING DIODE RELIABILITY IMPROVE, N 1664089, , , En
explotación Comercial , ,
; Method of semiconductor device quality control, N 993174, , , En explotación Comercial , ,
; Ultrasound treating method for semiconductor heterostructures, N1609389, , , En explotación
Comercial , ,
; ACTIVATION METHOD SELECTION FOR II-VI THIN FILM MATERIALS, 1157992, , , En
explotación Comercial , ,
; METHOD OF QUALITY CONTROL FOR PHOTOELECTRIC DEVICES BASED ON CDS -
CU2S, N 1326027, , , En explotación Comercial , ,
;DERECHOS DE AUTOR
31/10/2008 ; NANOSTRUCTURES AND QUANTUM DOTS OF GROUP IV SEMICONDUCTORS, 03-2008-
101711293800-01 , Coautor , LOS CIENTIFICOS QUEN TRABAJAN EN AREA DE
ESTRUCTURAS CON PUNTOS CUANTICOS DE SEMICONDUCTORES PARA DISPOSITIVOS
ELECTRONICOS DE NUEVO GENERACION , Pública
DISTINCIONES Y PREMIOS
DISTINCIONES
2014 ; Organization Committee of Symposium: Theory, modeling, ... at ICCMSE 2014, Greece. Athens
University, Grecia Grecia, Athens University, Grecia
2013 ; Guest Editor of Material Research Society Proceeding v. 1534, 2013 Material Research Society
EEUU Estados Unidos, Cambridge University Publisher
2013 ; Invited talk Physical reasons of the emission variation in core/shell CdSeTe ZnS quantum dots México, International Conference WAVES in Science and Engineering on WiSE 2013,
2013 ; Guest Editor of Special Issue of PHYSICA E, V.51, 2013 (Elsevier) Elsevier Publisher Reino Unido,
Elsevier Publisher
2013 ; Organizadora del Simposio 7E " Low dimensional .semicondactor ...""..en IMRC 2013, Can Cun,
Mexico Sociedad Mexicana de Materiale México, MRS - EEUU
2013 ; Integrante externo de Comite Evaluadoros de Convocatoria Proyectos Investigacion Universidad
IBEROAMERICANA México, Universidad IBEROAMERICANA, Cuidad Mexico
2013 ; Guest Editor of Material Research Society Proceeding v. 1617, 2013 Material Research Society
EEUU Estados Unidos, Cambridge University Publisher
2013 ; Mas interesados capitulos de libros en INTECH INTECH Croacia, INTECH publisher
2012 ; Invited presentation Nanocrystalls of IV and III-V groups CONACYT México, Congso Nacional de
Investigacion Cientifica Basica 2012 `¿Casos de Éxito¿
2012 ; Organizadora del Simposio 6B "Low dimensional .semiconductor ....""..en IMRC 2012, Can Cun,
Mexico Sosiedad Mxicana de Materiales México, MRS - USA
2012 ; Presentacion Invitada con titulo "Si quantum dot structures and their applications" Sociedad
Mexicana Materiales México, MRS USA
2012 ; Presentacion Invitada""Si and Ge quantum dots and different aspects of aplication"" CIICAp
México, Universidad Autonoma del Estado de Morelos
2012 ; Integrante de la Comision de Expertos de Fisico Matematicas de CONACYT CONACYT México,
El Fondo Sectorial de Investigacion para la Educacion de CONACYT
2012 ; MEMBER OF EDITORIAL BOARD OF NANO Bulletin, ISSN 2159-0427 Global Scientific
Publishers Canadá, Global Scientific Publishers
2011 ; Invited talk: Si and Ge quantum dots and examples of applications DAADde Intercambio Mexico-
Alem México, IPN
2011 ; Evaluadora de los proyectos CONACYT 2011 CONACYT México, CONACYT
2011 ; Invited talk:, Si quantum dots and different aspects of applications, Society SPIE USA Estados
Unidos, Society SPIE USA
2011 ; Invited talk:, CdSe/ZnS quantum dots with interface states as biosensors Society SPIE USA Estados
Unidos, Society SPIE USA
2011 ; Evaluadora externa en Comicion de UAM UAN México, UNIV. AUTONOMA METROPOLITANA
2011 ; Invited talk: Si and Ge Quantum dots and different aspects of applications Sociedad mexicana de
materiale México, MRS-USA
2010 ; Mas importantes articulas 2009 en NANOTECHNOLOGY IOP Publishing Reino Unido, IOP
Publishing
2010 ; Invited talk:: Emission efficiency of crystalline and amorphous Si nanoclusters IEEE Society
Rumanía, Rumania Academia de Ciencias
2010 ; Invited talk:, Semiconductor Quantum dots with interace state in biology and medicine Universidad
del Roma Italia, Universidad del Roma
2009 ; Presentacion invitada Semiconductor Nanocrystals and Quantum Dots Instituto Politecnico Nacional
México, UPIITA-INSTITUTO POLITECNICO NACIONAL
2009 ; Premio de la Investigacion 2009 del IPN Instituto Politechnico México, INSTITUTO
POLITECHNICO NACIONAL
2009 ; Presentacion invitada, Photoluminescence study and the evaluation of DWELL structure
parameters Lodz University Polonia, Lodz University
2009 ; Presentacion invitada Semiconductor Nanocrystals and Quantum Dots Universidad Politecnica
México, UNIVERSIDAD POLITECNICA DEL VALLE DEL MEXICO
2009 ; Member of Scientific Program Committee of International Conference "Interaction Among
Nanostructure Universidad de Arkanzas Estados Unidos, UNIVERSIDAD DE ARKANZAS
2009 ; Presentacion invitada ¿¿Exciton -polariton efects in SiC nanocrystals Universidad Kerala India,
UNIVERSIDAD KERALA Y INDIA MRS
2008 ; Some reasons of emission nonhomogenety in InAs quantum dot structures Academia de Ciencias
Ucrania Ucrania, FISICA DE SEMICONDUCTORES DE ACADEMIA DE CIENCIAS UCRANIA
2008 ; Exciton capture and thermal escape in InAs DWELL structures Hebrea Universidad de Jerusalé
Israel, HEBREA UNIVERSIDAD DE JERUSALEN ISRAEL
2008 ; Member of the International Editorial and Advisory Board IST Press Canadá, IST PRESS
PUBLISHER HOUSES
2008 ; Semiconductor Nanocrystals and Quantum Dots Universidad Politecnica México, UNIVERSIDAD
POLITECNICA DEL VALLE DE MEXICO
2008 ; Presentacion magistral ¿Some aspects of exciton thermal exchange in InAs QD DWELL laser
structures Ohio y Arkanzas Universities Estados Unidos, OHIO UNIVERSITY AND NANO
RESEARCH SOCIETY OF USA
2008 ; Nanocrystals and Quantum Dots of group IV semiconductors Instituto Politecnico Nacional México,
ESIME DEL INSTITUTO POLITECNICO NACIONAL
2007 ; Raman scattering in bioconjugated CdSe/ZnS quantum dots H. Lee Moffitt Cancer Center Estados
Unidos, H LEE MOFFITT CANCER CENTER AND RESEARCH INSTITUTE TAMPA EEUU
2007 ; Opical characterization of porou SiC Instituo Politecnico Nacional México, UPIITA DEL INSTITUO
POLITECNICO NACIONAL
2007 ; Premia de Directora de Mejor Tesis Doctorado del IPN en 2007 SIP-IPN México, INSTITUTO
POLITECNICO NACIONAL
2007 ; Exciton capture and thermal escape in InAs DWELL structures Academia Nacional de Ciencias
Ucrania, INSTITUTO DE FISICA DE SEMICONDUCTORES DE ACADEMIA NACIONAL DE
CIENCIAS DE UCRANIA
2007 ; Membro of Scientific Program Committee2008 International Conference "Interaction Among
Nanostructure Ohio University Estados Unidos, OHIO UNIVERSITY USA
2007 ; The Si and Ge quantum dots in different matrices Hebrea Universidad de Jerusalé Israel, HEBREA
UNIVERSIDAD DE JERUSALEN ISRAEL
2007 ; Membre of Program Committee, responsible for the section Low Dimensional Semiconductor
Nanostructure National Science Foundation Estados Unidos, UNIVERSITY OF ARKANZAS Y
NATIONAL SCIENCE FOUNDATION
2007 ; Exciton polariton effects in SiC nanocrystals Academia de Ciencias de Rusia Federación Rusia,
INSTITUTO IOFFE DE FISICO-TECNICA DE ACADEMIA DE CIENCIAS DE RUSIA
2006 ; MEMBER OF INTERNATIONAL PROGRAM COMMITTEE Uzbekistan Academi of Science
Uzbekistán, FERGANSKII POLYTECHNIC INSTITUTE
2006 ; Exciton dynamics in InAs quantum dots embedded in InGaAs/GaAs quantum well structures Academia Nacional de Ciencias Ucrania, INSTITUTO DE FISICA DE SEMICONDUCTORES DE
ACADEMIA NACIONAL DE CIENCIAS DE UCRANIA
2006 ; Exciton thermal escape in InAs quantum dots embedded in InGaAs/GaAs quantum well structures Universidad Florida Sur Ucrania, CENTRO DE NANOMATERIALES Y NANOTECNOLOGIAS
TAMPA EEUU
2006 ; Raman scattering in bioconjugated CdSe/ZnS quantum dots Academia Nacional de Ciencias
Ucrania, INSTITUTO DE FISICA DE SEMICONDUCTORES DE ACADEMIA NACIONAL DE
CIENCIAS DE UCRANIA
2006 ; Invited talk "Exciton dynamics in InAs quantum dots embedded in InGaAs/GaAs quantum well
structures Middle East Technical Universi Turquía, MIDDLE EAST TECHNICAL UNIVERSITY
TURKEY
2006 ; Presentacion invitada "Ballistic effect and photoluminescence of Si nanocrystallite structures" Benemerita Universidad Autonom México, BENEMERITA UNIVERSIDAD AUTONOMA DE
PUEBLA
2006 ; Presentacion invitada ¿¿ XV International Material Research Congress, Can Cun, 2006¿¿. Academia Mexicana de Ciencias México, ACADEMIA MEXICANA DE CIENCIAS DE
MATERIALES AC
2006 ; Comite Editorial y de Arbitraje de 11a Reunion Nacional Academica de Fisica ESFM-IPN México,
IPN
2006 ; Miembro de Comite Academico de Programa 'Electromagnetizmo y Fotonica" y Coordinador area
Fotonica IPN México, UPIITA-IPN
2005 ; Emission of Si nanocrystals in different matrices Academia de Ciencias de Hungar Hungría,
INSTITUTO DE FISICA TECNICA Y CIENCIAS DE MATERIALES DE ACADEMIA DE
CIENCIAS DE HUNGARIA
2005 ; Ground and Excited energy trend in InAs quantum dots Universidad Florida Sur Estados Unidos,
CENTRO DE NANOMATERIALES Y NANOTECNOLOGIAS TAMPA EEUU
2005 ; Ground and Excited level energy trend in InAs quantum dots Academia de Ciencias de Rusia
Federación Rusia, INSTITUTO IOFFE DE FISICO-TECNICA DE ACADEMIA DE CIENCIAS DE
RUSIA
2005 ; Ground and Excited level energy trend in InAs quantum dots Universidad de Nuevo Mexico Estados
Unidos, CENTRO DE MATERIALES DE TECHNOLOGIA ALTA ALBUQUERQUE EEUU
2005 ; Presentacion invitada at First Conference on Advances in Optical Materials, Tucson, Arizona, USA American Optical Society Estados Unidos, AMERICAN OPTICAL SOCIETY AND UNIVERSITY OF
ARIZONA
2005 ; Exciton polariton effects in SiC nanocrystals Academia Nacional de Ciencias Ucrania, INSTITUTO
DE FISICA DE SEMICONDUCTORES DE ACADEMIA NACIONAL DE CIENCIAS DE UCRANIA
2005 ; Presentacion magistral INTERNATIONAL WORKSHOP SEMINANO2005, Hungary, Budapest,
September, 2005 Hungary Academy of Science Hungría, RESEARCH INST FOR TECHNICAL
PHYSICS AND MATERIAL SCIENCE AT HUNGARY ACADEMY OF SCIENCIES
2005 ; Presentacion magistral "Photoluminescence of Si and Ge nanocrytsallites" Awaji University, Japón,
AWAJI UNIVERSITY JAPAN
2004 ; Emission of Si enriched silicon oxide Hebrea Universidad de Jerusalé Israel, HEBREA
UNIVERSIDAD DE JERUSALEN ISRAEL
2004 ; Magistral ,XXIV Congreso Annual Sociedad Mexicano de Ciencia y Tecnologia de Superficies y
Mate¿rial Sociedad Mexicano de Ciencia y México, SOCIEDAD MEXICANO DE CIENCIA Y
TECNOLOGIA DE SUPERFICIES Y MATERIALES
2004 ; Miembro de la Academia Mexicana de Ciencias Academia Mexicana de Ciencias México,
ACADEMIA MEXICANA DE CIENCIAS
2004 ; Emission non homogeneity in InAs DWELL structures Universidad Florida Sur Estados Unidos,
CENTRO DE NANOMATERIALES Y NANOTECNOLOGIAS TAMPA EEUU
2004 ; 2004-Premio de Investigacion del IPN INSTITUTO POLITECNICO NACIONAL México,
INSTITUTO POLITECNICO NACIONAL
2003 ; Emission of InAs quantum dos in DWELL structures with different composition of capping layers Universidad de Nuevo Mexico Estados Unidos, CENTRO DE MATERIALES DE TECHNOLOGIA
ALTA ALBUQUERQUE EEUU
2003 ; AWARD -proyecto N42436 CONACYT, Mexico- National Science Foundation, USA Cooperation
program CONACYT-NSF Estados Unidos, CONACYT MEXICO - NSF USA
2003 ; InAs quantum dot emissin in DWELLstructures Academia de Ciencias de Hungar Hungría,
INSTITUTO DE FISICA TECNICA Y CIENCIAS DE MATERIALES DE ACADEMIA DE
CIENCIAS DE HUNGARIA
2003 ; Invited lecture "Hot carrier ballistic transport and photoluminescence excitation in silicon nanocry ASTATPHYS-Mex-2003 México, ASTATPHYS-MEX-2003 Y INSTITUTO MEXICANO DE
PETROLIO
2003 ; Invited lecture "High Efficient Solar Cells for Space Applications" Sociedad Mexicana de Superfic
México, SOCIEDAD MEXICOANA DE SUPERFICIO Y VACIO
2003 ; Invited specker XXII I Congreso Annual Sociedad Mexicano de Ciencia y Tecnologia de Superf. y
Mater. Sociedad Mexicano de Ciencia y México, SOCIEDAD MEXICANO DE CIENCIA Y
TECNOLOGIA DE SUPERF Y MATERIALES
2002 ; INVITED LECTURE at THE FIRST INTERNATIONAL CONFERENCE ON ADVANCED
SPACE INVESTIGATIONS SPACE AGENCY of UKRAINE Ucrania, NACIONAL ACADEMY OF
SCIENCES AND SPACE AGENCY OF UKRAINE
2002 ; MEMBER OF SCIENTIFIC COMMITTEES OF THE FIRST INTERNATIONAL
CONFERENCE ON ADVANCED SPACE SPACE AGENCY of UKRAINE Ucrania, NACIONAL
ACADEMY OF SCIENCES AND SPACE AGENCY OF UKRAINE
2002 ; MEMBER OFPROGRAM COMMITTEES OF THE FIRST INTERNATIONAL CONFERENCE
ON ADVANCED SPACE SPACE AGENCY of UKRAINE Ucrania, NACIONAL ACADEMY OF
SCIENCES AND SPACE AGENCY OF UKRAINE
2002 ; Invited talk "Mechanism of photoluminescence of silicon oxide films enriched by Si or Ge" International Union of MRS China, INTERNATIONAL UNION OF MRS
2002 ; Photoluminescence study in Si nanocrystals Universidad Nuevo Mexico Estados Unidos, CENTRO
DE MATERIALES DE TECHNOLOGIA ALTA ALBUQUERQUE EEUU
2002 ; Invited lecture: "Ballistic regime and photoluminescence excitation in Si wires and dotes" Academia de Ciencias de Hungar Hungría, ACADEMIA DE CIENCIAS DE HUNGARY
2002 ; Invited talk "Binding energy of localized excitons in InAs self-assembled quantum dots embedded
into Academia de Ciencias de Russia Federación Rusia, ACADEMIA DE CIENCIAS DE RUSSIA
2001 ; Miembro del Comite Academico de la Programa Doctorado "Fisica de los Materiales" Instituto
Politecnico Nacional México, ESFM- INSTITUTO POLITECNICO NACIONAL
2001 ; MEMBER OF INTERNATIONAL PROGRAM COMMITTEES OF THE 6TH
INTERNATIONAL WORKSHOP ON EXPERT EVALUATION AN Academia de Ciencias de
Hungar Hungría, ACADEMIA DE CIENCIAS DE HUNGARIA
2000 ; Plenary talk "Application of III-V material solar cells in space solar energetics" Sociedad Mexicana
Superficio y México, SOCIEDAD MEXICANA SUPERFICIO Y VACIO
2000 ; Plenary talk at Gordon Research Conferences, July 9-14, 2000, New-London, N.H., USA. Gordon
Research Committee Estados Unidos, GORDON RESEARCH COMMITTEE OF USA
1999 ; Plenary lecture at 2-th National Congress of Crystallography, Ensenada, Mexico. Sociedad
Mexicana de Crystallo México, SOCIEDAD MEXICANA DE CRYSTALLOGRAFIA
1999 ; Invited lecture Perspectives of III¿V Material Solar Cell Application in Space Solar Cell Delhi
University India, DELHI UNIVERSITY INDIA
1998 ; INDIVIDUAL GRANT: N QSU082200 of INTERNATIONAL SCIENCE FAUNDATION ( USA,
WASHINGTON) INTERNATIONAL SCIENCE FAUNDATI Estados Unidos, INTERNATIONAL
SCIENCE FAUNDATION USA WASHINGTON
1998 ; AWARD - UKRAINIAN MEDAL "80TH ANNIVERSARY OF NATIONAL ACADEMY OF
SCIENCES of Ukraine" Academia Nacional de Ciencias Ucrania, ACADEMIA NACIONAL DE
CIENCIAS DE UCRANIA
1998 ; Invited speaker Inter. Conference ¿Extended Defects in Semiconductors¿, Jaszowiec, POLAND,
1998, Poland Academy of Science Polonia, POLAND ACADEMY OF SCIENCE
1998 ; Invited lecture at NATO International Workshop on Solar energy Engineering, Poland, Warsow,
1998 Poland Academy of Sciencies Polonia, POLAND ACADEMY OF SCIENCIES
1997 ; Invited lecture ¿Transformation of GaP Layer luminescence Spectra on Introduction Dislocations, NATO Eslovaquia, NATO ADVANCED RESEARCH WORKSHOP
1997 ; Invited lecture ¿Comparison of Si and AlGaAs/GaAs solar cell perspectives Chernivtsi University
Ucrania, CHERNIVTSI UNIVERSITY UKRAINE
1996 ; Invited lecture ¿ Electrical and optical properties of non-uniform semiconducting synthetic diamon IEEE SIMC Francia, IEEE SIMC
1996 ; Invited lecture ¿Deep centers in MOCVD InGaAs photodiodes for optical fiber and its influence on
di Academia de Ciencia de Rusia Federación Rusia, ACADEMIA DE CIENCIA DE RUSIA
1995 ; Invited lecture at Third IUMRS International Conference in Asia (IUMRS-ICA-'95), Seoul,
SOUTH KOREA, INTERNATIONAL uNION OF MRS República Corea, INTERNATIONAL
UNION OF MRS
1995 ; ADVISER OF THE HEAD OF COMMITTEE OF UKRAINE FOR SCIENCE AND
TECNOLOGY MINISTRY OF SCIENCE Ucrania, MINISTRY OF SCIENCE AND EDUCATION
OF UKRAINE
1995 ; Invited lecture "Basic mechanism of injection¿enhanced light-emitting diode degradation" Universities Paris 6&7 Francia, UNIVERSITIES PARIS 67 PARIS FRANCE
1995 ; Comite de Organizadores y Editorial Kherson Universidad Ucrania, MINISTERIO DE EDUCACION
DE UCRANIA
1995 ; AWARD - STATE UKRAINIAN PRIZE IN SCIENCE and TECHNIQUE PRESIDENT OF
UKRAINE Ucrania, AWARDED BY PRESIDENT OF UKRAINE
1995 ; MEMBER OF SPECIALIZED QUALIFICATION COUNSELS OF DOCTOR OF SCIENCE
DEGREE AWARD Cabinet of Ministros of Ukrain Ucrania, ACADEMIA NACIONAL DE
CIENCIAS DE UCRANIA AND CABINET OF MINISTROS OF UKRAINE
1994 ; iNVITED LECTURE International Conference on Electronic Materials (ICEM¿94) , Hsinchu,
Taiwane Hsinchu University Taiwán, Provincia China, HSINCHU UNIVERSITY
1994 ; Plenaru lecture at 1994 IEEE INTERNATIONAL RELIABILIT SIMPOSIUM, San-Jose, CA,
USA, 1994 American IEEE Society Estados Unidos, AMERICAN IEEE SOCIETY
1994 ; AWARD -INDIVIDUAL GRANT N1219 of INTERNATIONAL SCIENCE FAUNDATION (USA,
WASHINFTON) INTERNATIONAL SCIENCE FAUNDATI Estados Unidos, INTERNATIONAL
SCIENCE FAUNDATION USA WASHINFTON
1994 ; Invited lecture " Characterization of deep-level defects in MOCVD InxGa1-xAs layers", Academia
de Ciencias de Poland Polonia, ACADEMIA DE CIENCIAS DE POLANDIA
1994 ; Presentacion invitada¿Characterization of deep level defectsin MOCVD InGaAs layers Instituto de
Fisica de solido Polonia, ACDEMIA DE CIENCIA DE POLONIA
1994 ; Invited lecture at SPIE Meeting ¿Microelectronic and Manufacturing¿ San-Diego, (USA), 1994, SPIE Society Estados Unidos, SPIE SOCIETY
1994 ; Invited lecture "Injection-enhanced defect reactions in III-V light emitting diodes" Hewlett Packard
Com. , Estados Unidos, MATERIALS TECHNOLOGY RD OPTOELECTRONICS DIVISION
HEWLETT PACKARD COM SAN-JOSE CALIFORNIA USA
1993 ; AWARD - INDIVIDUAL GRANT N 1572 of INTERNATIONAL SCIENCE FAUNDATION
(Washington, USA) INTERNATIONAL SCIENCE FAUNDATI Estados Unidos, INTERNATIONAL
SCIENCE FAUNDATION WASHINGTON USA
1993 ; Invited lecture "Defect reactions in III-V light emitting diodes in unequlibrium state" Bell Northern
Research, Canadá, BELL NORTHERN RESEARCH OTTAWA ONTARIO CANADA
1993 ; Invited lectures "Injection-enhanced defect reactions in III-V light emitting diodes Toronto
University, Canadá, TORONTO UNIVERSITY WATERLOO UNIVERSITY MAC-MASTER
UNIVERSITY
1993 ; MEMBER OF GENERAL COUNSEL ON SPACE HELIO ENERGY NATIONAL SPACE
AGENCY OF UKRAINE, KIEV. SPACE AGENCY OF UKRAINE Ucrania, NATIONAL SPACE
AGENCY OF UKRAINE
1991 ; Comite de Programa Kishinew Universidad República Moldavia, MOLDOVA ACADEMIA DE
CIENCIAS
1991 ; Invited lecture "Electronically ¿ Enhanced Defect Reactions in Wide-Gap Semiconductors: University of Messina Italia, INSTITUTE OF THEORETICAL PHYSICS OF UNIVERSITY OF
MESSINA
1991 ; Plenary lectur III-th USSR Conference ¿Physical Bases of Relability and Degradation of
Semiconductor USSR Academy of Sciences República Moldavia, USSR ACADEMY OF SCIENCES
1990 ; Invited lecture "Injection-Enhanced Defect Reactions in III-V Light-emitting Materials Bulgarian
Academy of Science Bulgaria, BULGARIAN ACADEMY OF SCIENCES
1990 ; MEMBER OF ORGANIZATION AND PROGRAM COMMITTEES OF THE USSR NATIONAL
CONFERENCE ON PHYSICS OF SEMICOND ACADEMY OF SCIENCES OF UKRAINE
Ucrania, NATIONAL ACADEMY OF SCIENCES OF UKRAINE
1990 ; MEMBER OF GENERAL SCIENTIFIC COUNCIL OF INSTITUTE OF SEMICONDUCTOR
PHYSICS, NATIONAL ACADEMY OF SCIE NACIONAL DE CIENCIA DE UCRANIA Ucrania,
ACADEMIA NACIONAL DE CIENCIA DE UCRANIA
1990 ; MEMBER OF SPECIALIZED QUALIFICATION COUNSELS OF DOCTOR OF SCIENCE
DEGREE AWARD Cabinet of Ministers of Ukrain Ucrania, NATIONAL ACADEMY OF SCIENCE
OF UKRAINE AND CABINET OF MINISTERS OF UKRAINE
1990 ; Plenary talk XII-USSR Conference ¿Physics of Semiconductors¿, Kiev, USSR, 1990 USSR
Academy of Sciences Ucrania, USSR ACADEMY OF SCIENCES
1990 ; Invited lecture at III USSR Conference ¿Physics and Technology of thin semiconductor films¿, USSR Academia de Ciencias Ucrania, USSR ACADEMIA DE CIENCIAS
1989 ; Presentacion invitada Degradation of GaP N and GaP N Zn O light emitting diodes Chernigov
Universidad Ucrania, ACADEMIA DE CIENCIAS DE UCRANIA
1989 ; MEMBER OF ORGANIZATION COMMITTEES OF UKRAINE CONFERENCE PHYSICAL
METHODS OF THE FORECAST ACADEMY OF SCIENCES OF UKRAINE Ucrania, NATIONAL
ACADEMY OF SCIENCES OF UKRAINE
1989 ; Presentacion invitada Injection enhanced defect center transformation in red AlGaAs light
emitting d Ioffe Fisico Tech. Institute Federación Rusia, ACADEMIA DE CIENCIAS DE RUSIA
1989 ; Comite de Organizadoras Ioffe Fisico Tech Instituto Federación Rusia, ACADEMIA DE CIENCIAS
DE RUSIA
1989 ; Plenary lecture "Joint mechanism of the defect transformation in light-emitting diodes under
degrada Academia de Ciencias Azerbaidz Azerbayán, ACADEMIA DE CIENCIAS
AZERBAIDZHAN
1988 ; AWARD - USSR MEDAL "INVENTOR USSR" COUNCIL OF MINISTRY OF USSR, Federación
Rusia, COUNCIL OF MINISTRY OF USSR MOSCOW RUSSIA
1986 ; MEMBER OF PROGRAM COMMITTEES OF 2TH USSR CONFERENCE PHYSICAL BASE
OF RELIABILITY AND DEGRADATION MOLDOVA POLYTECHNIC INSTITUTE República
Moldavia, MOLDOVA POLYTECHNIC INSTITUTE AND ACADEMY OF SCIENCES
1986 ; Invited lecture "Degradation of the green GaP:N light emitting diodes and factors, influent on it," Academia De Ciencias Moldova República Moldavia, ACADEMIA DE CIENCIAS REPUBLICA
MOLDOVA
1986 ; Comite del Programa y Copmite Editorial de libro de memorias, Kishinew Universidad República
Moldavia, ACADEMIA DE CIENCIAS DE REPUBLICA DE MOLDAVIA
1984 ; Presentacion invitada Influence of electron irradiation with thereshold energy on the characteristic Tashkent University Uzbekistán, UZBEKISTAN ACADEMIA DE CIENCIAS
1984 ; Invited lecture "Physical nature of the light emitting diode and semiconductor laser degradation" Academia de Ciencias de Rusia Federación Rusia, ACADEMIA DE CIENCIAS DE RUSIA
1983 ; AWARD - USSR MEDAL "MEMORY OF 1500TH ANNIVERSARY OF KIEV" ACADEMY OF
SCIENCES OF UKRAINE Ucrania, NATIONAL ACADEMY OF SCIENCES OF UKRAINE
1983 ; MEMBER OF PROGRAM COMMITTEE OF USSR NATIONAL CONFERENCES PHYSICS
AND TECHNICAL APPLICATIONS OF II ACADEMY OF SCIENCES OF Lotuani Lituania,
ACADEMY OF SCIENCES OF LOTUANIA
1983 ; Invited lecture" Elementary mechanisms of the photofatigue, aging and degradation processes in
II-VI Academia de Ciencias de Rusia Federación Rusia, ACADEMIA DE CIENCIAS DE RUSIA
1983 ; Presentacion invitada¿Photostimulated transformation and formation of local defects in II'VI
semicon Riga Universidad Letonia, ACADEMIA DE CIENCIAS DE LETONIA
1982 ; Presentacion invitada Mechanisms of photostimulated defect formations in semiconductors Baku
Universidad Azerbayán, AZERBAIDZAN ACADEMIA DE CIENCIAS
1982 ; Invited lecture "Photofatigue and aging in solar cells" Moldova Academi of Sciencies República
Moldavia, MOLDOVA ACADEMI OF SCIENCIES
1982 ; Las Comitetas de Programa y Editorial Odessa Universidad Ucrania, ACDEMIA DE CIENCIAS DE
UCRANIA
1982 ; Invited lecture "Mechanism of ageing process in phtoresistors based on CdS:Cu:Cl thin films" Academy of Sciences of Ukraine Ucrania, NATIONAL ACADEMY OF SCIENCES OF UKRAINE
1981 ; Presentacion magistral Physica nature of degradation of light emitting diodes and lasers Ioffe
Fisico Techn Institute Federación Rusia, ACADEMIA DE CIENCIAS DE RUSIA
1980 ; Invited lecture "Photostimulated deep centers convertion in II-VI semiconductors" Academia de
Ciencias de Rusia Federación Rusia, ACADEMIA DE CIENCIAS DE RUSIA
1979 ; MEMBER OF PROGRAM COMMITTEE OF USSR NATIONAL CONFERENCES ACADEMY
OF SCIENCES OF UKRAINE Ucrania, NATIONAL ACADEMY OF SCIENCES OF UKRAINE
1979 ; Invited lecture at 1-th Ukrainian Conference ¿Photoelectric Phenomena in Semiconductors¿, Academia de Ciencias Ucrania Ucrania, ACADEMIA DE CIENCIAS NACIONAL DE UCRANIA
1977 ; Invited lecture at Inter. Conference ¿ Science and Technic. of New Materials¿, Moscow, USSR Russian Academy of Sciences Federación Rusia, RUSSIAN ACADEMY OF SCIENCES
DIVULGACION Y DIFUSION
DIVULGACION Y
DIFUSION
16/07/2014 ; 18. Preface of the "symposium on theory, modeling, investigation and simulation of low-
dimensional semiconductor systems", AIP Conference Proceedings , Extranjero , Medios Impresos ,
AIP Conference Proceedings, 2014, Memorias del ICCMSE 2014, Athens, Greece, 04-07 Abril, 2014
11/06/2014 ; LOW-DIMENSIONAL SEMICONDUCTOR STRUCTURES, Elsevier Publishing House ,
Extranjero , Medios Impresos , Tetyana V. Torchynska, Larysa Khomenkova, Georgiy Polupan,
Gennadiy Burlak,, Editores de Special Issue `¿Low-Dimensional Semiconductor structures¿, Physica B,
v.453, 2014.
08/01/2014 ; ORGANIZADORA DE ICCMSE 2014 10TH INTERNATIONAL CONFERENCE OF
COMPUTATIONAL METHODS IN SCIENCES AND ENGINEERING, Athens University, Greece
, Extranjero , Simposium , Simposium Organizer, Theory, modeling, investigation and simulation of
Low-Dimensional Semiconductor Systems, Athens, Greece, Metropolitan hotel,April 04-07, 2014,
http://www.iccmse.org
07/01/2014 ; EDITORA DE MRS PROCEEDING BOOK LOW DIMENSIONAL SEMICONDUCTOR
STRUCTURES, Material Research Society of USA , Extranjero , Medios Impresos , Editor of MRS
Proceeding book, Cambridge Uneversity Press, v.1617, paper presented in Symposium 7E ""Low
dimensional Semiconductor structures"" at IMRC 2013, Can Cun, Mexico
05/11/2013 ; PHYSICAL REASONS OF THE EMISSION VARIATION IN CORE/SHELL CDSE CDSETE
ZNS QUANTUM DOTS CONJUGATED TO ANTIBODIES, SEP Mexico , Nacional , Conferencias
, T. V. Torchynska (invitada), Physical reasons of the emission variation in core/shell CdSe CdSeTe ZnS
quantum dots conjugated to antibodies, WiSE 2013, International Conference WAVES in Science and
Engineering, 4-8 November 2013, Huatulco, Oaxaca, Mexico
18/08/2013 ; LOW-DIMENSIONAL SEMICONDUCTOR STRUCTURES, Material Research Society ,
Extranjero , Medios Impresos , Tetyana V. Torchynska, Larysa Khomenkova, Georgiy Polupan,
Gennadiy Burlak, Editores de MRS Proceeding volum published Cembridge University Press, Mater.
Res. Soc. Symp. Proc. Vol. 1617 © 2014 , IMRC 2013 - Symposium ¿ Low-Dimensional Semiconductor
Structu
11/08/2013 ; ORGANIZADORA DE XXII CONGRESO INTERNACIONAL IMRC 2013, SYMPOSIUM .7E,,
Sociedad mexicana de materiales , Extranjero , Simposium , Organizadora Symposium 7E ""Low
dimensional semiconductor structures ""at IMRC2013, Agosto 11-15, 2013, Can Cun, Mexico,
http://www.mrs.org/imrc2013/
http://www.mrs-mexico.org.mx/imrc2013/
11/06/2013 ; EDITORA DE SPECIAL ISSUE OF PHYSICA E,, ELSEVIER , Extranjero , Medios Impresos ,
Editors T.V.Torchynska, Yu. Vorobiev, Zs. Horvath and Editorial for Special Issue of Physica E, v.51,
2013 with papers presented in Symposium 6B "LOW DIMENSIONAL SEMICONDUCTOR
STRUCTURES"" at IMRC 2012 , Can Cun, Mexico
05/06/2013 ; EDITORIAL, Elsevier Publisher , Extranjero , Revistas de Divulgación , T.V.Torchynska, Yu.
Vorobiev, Zs. Horvath, Editorial, J. Phys. E, 51 (2013) p.1.
DOI:10.1016/j.physe.2013.03.012.http://authors.elsevier.com/sd/article/S1386947713000775
14/05/2013 ; EVALUADORA EXTERNA EN LA COMISIÓN DE CONVOCATORIA PROYECTOS DE LA
INVESTIGACIÓN, Universidad de la IBEROAMERICANA , Nacional , Seminarios , Evaluadora
externa en la Comisión de Convocatoria proyectos de la Investigación en Universidad de la
IBEROAMERICANA
22/11/2012 ; PRESENTACION INVITADA: NANOCRYSTALLS OF IV AND III-V GROUPS, CONACYT, ,
Nacional , Conferencias , T. V. Torchynska (invitada), Nanocrystalls of IV and III-V groups, Congso
Nacional de Investigacion Cientifica Basica 2012 `¿Casos de Éxito¿¿, CONACYT, 21-23 de Noviembre,
2012, Cancun, Mexico
12/09/2012 ; EVALUADORA EXTERNA EN PROGRAMA DOCTORADA, Universidad Autónoma
Metropolitana , Nacional , Conferencias , Evaluadora externa en programa Doctorado en Universidad
Autónoma Metropolitana
13/08/2012 ; PRESENTACION INVITADA: SI QUANTUM DOT STRUCTURES AND THEIR
APPLICATIONS, Sociedad Mexicana de Materiales , Extranjero , Conferencias , T.Torchynska,
L.Shcherbyna, (invitada), Si quantum dot structures and their applications. IMRC 2012, XXI
International Material Research Congress, 12-16 August 2012, Can Cun, Mexico
12/08/2012 ; ORGANIZADORA DE XXI CONGRESO INTERNACIONAL, IMRC 2012, SYMPOSIUN 6B,,
Sociedad Mexicana de Materiales , Extranjero , Simposium , Paginas del Internet de MRS-USA y
SMM-Mexico, Organizer of Symposium 6B ""Low dimensional semiconductor structuresat IMRC2012,
Agosto 12-16, 2012, Can Cun, Mexico,
http://www.mrs.org/imrc2012/
http://www.mrs-mexico.org.mx/imrc2012/
01/06/2012 ; PRESENTACION INVITADA: SI AND GE QUANTUM DOTS AND DIFFERENT ASPECTS OF
APPLICATION, Universidad Autónoma del Estado de Morelos , Nacional , Conferencias , T. V.
Torchynska (invitada), Si and Ge quantum dots and different aspects of application, Conferencia en
Centro de Investigacion en Ingenieria y Ciencias Aplicadas, Universidad Autónoma del Estado de
Morelos, Cuernavaca, Morelos, México,1 DE Junio de 201
12/05/2012 ; INTEGRANTE DE LA COMISIÓN DE EXPERTOS DE FISICO MATEMATICAS, CONACYT ,
Nacional , Seminarios , Integrante de la Comisión de expertos de FISICO MATEMATICAS de la
Convocatoria de Investigación Científica Básica 2012, CONACYT
22/11/2011 ; PRESENTACION INVITADA: SI AND GE QUANTUM DOTS AND EXAMPLES OF
APPLICATIONS. NANOESTRUCTURAS Y MATERIALES NANOESTRUCTURADOS, DAAD
de Intercambio Mexico-Alemania, , Extranjero , Ferias Cientificas y Tecnologi , T. V. Torchynska
(invitada), Si and Ge quantum dots and examples of applications Nanoestructuras y Materiales
Nanoestructurados, 2do ciclo de Conferencias y 1ro seminario alumni DAAD de Intercambio Mexico-
Alemania, 22-23 Noviembre 2011, Mexico city, Mexi
24/08/2011 ; PRESENTACION INVITADA: CDSE/ ZNS QUANTUM DOTS WITH INTERFACE STATES AS
BIOSENSORS, Sociedad SPIE Optics and Photonics , USA , Extranjero , Ferias Cientificas y
Tecnologi , T. V. Torchynska (invitada), CdSe/ ZnS quantum dots with interface states as biosensors,
SPIE Optics and Photonics 2011, 21-25 August 2011, San Diego, California, USA
23/08/2011 ; PRESENTACION INVITADA: SI QUANTUM DOTS AND DIFFERENT ASPECTS OF
APLICATIONS, Sociedad SPIE de EEUU , Extranjero , Ferias Cientificas y Tecnologi , T. V.
Torchynska (invitada), Si quantum dots and different aspects of aplications, SPIE Optics and Photonics
2011, 21-25 August 2011, San Diego, California, USA
15/08/2011 ; PRESENTACION INVITADA: SI AND GE QUANTUM DOTS AND DIFFERENT ASPECTS OF
APPLICATIONS,, Sociedad Mexica Materiales , Extranjero , Ferias Cientificas y Tecnologi , T. V.
Torchynska (invitada), Si and Ge quantum dots and different aspects of applications, IMRC 2011,
Congress, Symposium 05; Advances in Semiconducting Materials, Can Cun, Mexico
11/10/2010 ; PRESENTACION INVITADA: EMISSION EFFICIENCY OF CRYSTALLINE AND
AMORPHOUS SI NANOCLUSTERS, Academia de Ciencias de Rumania , Extranjero , Ferias
Cientificas y Tecnologi , T.V. Torchynska, (magistral), Emission efficiency of crystalline and amorphous
Si nanoclusters, IEEE International Semiconductor Conference, CAS 2010, Sinaia, Rumania, October
11-13, 2010
14/09/2010 ; PRESENTACION MAGISTRAL: SEMICONDUCTOR QUANTUM DOTS WITH INTERACE
STATE IN BIOLOGY AND MEDICINE, Universidad de Roma, Italy , Extranjero , Ferias Cientificas
y Tecnologi , T.V. Torchynska, (invitada), Semiconductor Quantum dots with interace state in biology
and medicine, X International Conference on Nanostructures materials, Session Nanobiotechnologies,
Roma, Italy, September 13-17, 2010.
12/02/2010 ; ORGANIZACIÓN DE LABORATORIO OPTOELECTRÓNICA, ESFM-IPM , , Talleres ,
Organización de Laboratorio Optoelectrónica en ESFM-IPM
11/02/2010 ; MEMBER OF EDITORIAL BOARD, NANO BULLETIN, ISSN 2159-0427, Global Scientific
Publishers , Extranjero , Medios Impresos , MEMBER OF EDITORIAL BOARD, NANO Bulletin,
ISSN 2159-0427 Global Scientific Publishers
13/01/2010 ; ORGANIZACIÓN PROGRAMA DOCTORADO Y GRUPO INVESTIGADORE, UPIITA del IPN
, Nacional , Seminarios , Organización programa Doctorado y Grupo investigadores en UPIITA del IPN
04/01/2010 ; MIEMBRO DE COMITE ACADEMICO DE ESFM-IPN, ESFM-IPN , Nacional , Seminarios ,
13/10/2009 ; GANADORA DE PREMIO DE LA INVESTIGACION DEL IPN 2009, IPN , Nacional , Ferias
Cientificas y Tecnologi , Premio de la Investigacion del IPN 2009
07/09/2009 ; PRESENTACION INVITADA: INTERFACE STATES AND BIOCONJUGATION OF
CORE/SHELL CDSE/ZNS QUANTUM DOTS,, Universidad de Arkanzas de EEUU , Extranjero ,
Simposium , T. V. Torchynska (magistral), Interface states and bioconjugation of core/shell CdSe/ZnS
quantum dots, International Conferences on Interaction Among Nanostructures, Septiembre 4-8, 2009,
Virginian Islands, USA.
03/09/2009 ; ORGANIZADORA DE INTERNATIONAL CONFERENCES ON INTERACTION AMONG
NANOSTRUCTURES, SEPTEMBER, 3-7, 2009, VIRGINIAN ISLANDS, USA., American
PhysicaL Society , Extranjero , Conferencias , International Program Committee of the International
Conferences on Interaction Among Nanostructures, September, 3-7, 2009, Virginian Islands, USA.
23/06/2009 ; ENTREVISTA FORMADORA DE NUEVAS GENERACIONES DE INVESTIGADORES, Gaseta
Politecnica del IPN , Nacional , Medios Impresos , Tetyana Torchynska, formadora de nuevas
generaciones de investigadores, Entrevista para Gaseta Politecnica del IPN, N739, Junio 23, 2009.
09/04/2009 ; ARTICULO: EL MUNDO FANTÁSTICO DE LOS PUNTOS CUANTICOS O NO TODO LO
QUE BRILLA ES ORO,, Instituto Politecnico Nacional , Nacional , Revistas de Divulgación , L.G.
Vega Macotela, J. Douda, T.V. Torchynska, El mundo fantástico de los puntos cuanticos o no todo lo que
brilla es oro, Revista del IPN Conversus, N.79, p. 30-32, 2009, ISSN 1665-2665.
07/04/2009 ; PRESENTACION INVITADA: EXCITON-POLARITON EFFECTS IN SIC NANOCRYSTALS,,
Universidad de Kerala, India , Extranjero , Simposium , T. V. Torchynska (invitada), Exciton-polariton
effects in SiC nanocrystals, First International Conference on Nanostructured Materials and
Nanocomposites (ICNM ¿ 2009): April 6, 7 and 8, 2009, Kottayam, Kerala, India
12/02/2009 ; ORGANIZACIÓN PROGRAMAS MAESTRÍA Y DOCTORADO EN FISICOMATEMATICAS,
ESIME del IPN , Nacional , Seminarios , Organización programas Maestría y Doctorado en ESIME del
IPN
02/02/2009 ; PRESENTACION INVITADA " EXCITON-POLARITON EFFECTS IN SIC
NANOCRYSTALS"INTERNATIONAL CONFERENCE ON NANOSTRUCTURED
MATERIALS AND NANOCOMPOSITES,2009, KERALA, INDIA., Kerala University, India ,
Extranjero , Simposium , Presentacion invitada de T. V. Torchynska, Exciton-polariton effects in SiC
nanocrystals
First International Conference on Nanostructured Materials and Nanocomposites (ICNM ¿ 2009): April
6, 7 and 8, 2009, Kottayam, Kerala, India
31/01/2009 ; MIEMBRO DE "INTERNATIONAL SCIENTIFIC PROGRAM COMMITTEE OF
INTERNATIONAL CONFERENCES ON INTERACTION AMONG NANOSTRUCTURES",
SEPTEMBER, 3-7, 2009, VIRGINIAN ISLANDS, USA., Nano Research Society, Ohio University,
Athens, Ohio. EE.UU , Extranjero , Simposium , Miembro de " International Scientific Program
Committee of International Conferences on Interaction Among Nanostructures", September, 3-7, 2009,
Virginian islands, USA.
02/12/2008 ; RESPONSABLE Y MODERADOR DE SECCION ELECTRONICA PARA 19 REUNION DE
OTONO DE COMUNICACIONES, COMPUTACIÓN, ELECTRÓNICA Y EXPOSICIÓN
INDUSTRIAL, ROC&C 2008, 30 NOVIEMBRE -6 DICEMBRE 2008, ACAPULCO, MEXICO,
IEEE seccion Mexico , Nacional , Simposium , Moderador de seccion Electronica para 19 Reunion de
otono de comunicaciones, computación, electrónica y exposición industrial, ROC&C 2008, 30
Noviembre -6 Dicembre 2008, Acapulco, Mexico
01/12/2008 ; PRESENTACION INVITADA, "POROUS SIC FOR GAN BASED ELECTRONICS", 19
REUNION DE OTONO DE COMUNICACIONES, COMPUTACIÓN, ELECTRÓNICA Y
EXPOSICIÓN INDUSTRIAL, ROC&C 2008, 30 NOVIEMBRE -6 DICEMBRE 2008,
ACAPULCO, MEXICO, IEEE seccion Mexico , Nacional , Simposium , Presentacion invitada
T.V.Torchynska, G. Polupan, Porous SiC for GaN based electronics, 19 Reunion de otono de
comunicaciones, computación, electrónica y exposición industrial, ROC&C 2008, 30 Noviembre -6
Dicembre 2008, Acapulco, Mexico
01/07/2008 ; PRESENTACION INVITADA DE, "EMISSION OF SI NANOCLUSTERS OF DIFFERENT
PHASES IN AMORPHOUS HYDROGENATED SILICON, 9TH INTERNATIONAL
WORKSHOP ON BEAM INJECTIO ASSESMENT OF MICROSTRUCTURE IN
SEMICONDUCTORS", TOLEDO, SPAIN, 29 JUNE-3JULY 2008,, Universidad de Madrid, Espania
, Extranjero , Simposium , Presentacion invitada de T. V. Torchynska, Emission of Si nanoclusters of
different phases in amorphous hydrogenated silicon, 9th International Workshop on Beam Injectio
Assesment of Microstructure in Semiconductors, Toledo, Spain, 29June-3July 2008,
30/06/2008 ; PRESENTACION INVITADA DE, " EXCTON RELATED PHOTOLUMINESCENCE
STIMULATION IN SIC NANOCRYSALLITES", 9TH INTERNATIONAL WORKSHOP ON
BEAM INJECTIO ASSESMENT OF MICROSTRUCTURE IN SEMICONDUCTORS, TOLEDO,
SPAIN, 29JUNE-3JULY 2008,, Universidad de Madrid, Espania , Extranjero , Simposium ,
Presentacion invitada de T.V.Torchynska, Excton related photoluminescence stimulation in SiC
nanocrysallites, 9th International Workshop on Beam Injectio Assesment of Microstructure in
Semiconductors, Toledo, Spain, 29June-3July 2008,
18/06/2008 ; MIEMBRO DE "INTERNATIONAL EDITORIAL AND ADVISERY BOARD OF IST PRESS",
International Science and Technology Press (IST Press) , Extranjero , Medios Impresos , Publisher
House - International Science and Technology Press (IST Press)-
MEMBER OF INTERNAIONAL EDITORIAL AND ADVISERY BOARD OF IST PRESS
24/03/2008 ; PRESENTACION, PHOTOLUMINESCENCE OF SI NANOCLUSTERS IN AMORPHOUS
HYDROGENATED SILICON, 2008 MRS MEETING, SYMPOSIUM A, 24-27 MARCH, 2008,
SAN FRANCISCO, USA., American MRS, USA , Extranjero , Simposium , Presentacion de T. V.
Torchynska, Photoluminescence of Si nanoclusters in amorphous hydrogenated silicon, 2008 MRS
Meeting, Symposium A, 24-27 March, 2008, San Francisco, USA.
03/02/2008 ; MIEMBRO DE "INTERNATIONAL SCIENTIFIC PROGRAM COMMITTEE OF
INTERNATIONAL CONFERENCES ON INTERACTION AMONG NANOSTRUCTURES",
FEBRUARY 3-7, 2008, ORLANDO, FLORIDA, USA., Nano Research Society, Ohio University,
University of Arkansas, EEUU. , Extranjero , Simposium , Miembro de " International Scientific
Program Committee of International Conferences on Interaction Among Nanostructures", February 3-7,
2008, Orlando, Florida, USA.
04/01/2008 ; PRESENTACION MAGISTRAL DE T. V. TORCHYNSKA, SOME ASPECTS OF EXCITON
THERMAL EXCHANGE IN INAS QD DWELL LASER STRUCTURES, INTERNATIONAL
CONFERENCES ON INTERACTION AMONG NANOSTRUCTURES, FEBRUARY 3-7, 2008,
ORLANDO, FLORIDA, USA., Nano Research Society, Ohio University, USA , Extranjero ,
Simposium , Presentacion magistral de T. V. Torchynska, Some aspects of exciton thermal exchange in
InAs QD DWELL laser structures, International Conferences on Interaction Among Nanostructures,
February 3-7, 2008, Orlando, Florida, USA.
30/11/2007 ; PRESENTACION INVITADA " EXCITON CAPTURE AND TERMAL ESCAPE IN INAS
QUANTUM DOT STRUCTURES FOR OPTICAL FIBER COMMUNICATION", ROC&C 2007,
28 NOV. -4 DIC. 2008, ACAPULCO, MEXICO, IEEE seccion Mexico , Nacional , Simposium ,
Presentacion de T.V.Torchynska, Exciton capture and termal escape in InAs quantum dot structures for
optical fiber communication, 18 Reunion de otono de comunicaciones, computación, electrónica y
exposición industrial, ROC&C 2007, 28 Nov. -4 Dic. 2008, Ac
20/08/2007 ; PRESENTACION INVITADA DE " CORRELATION BETWEEN THE
PHOTOLUMINESCENCE AND DIFFERENT TYPES OF SI NANOCLUSTERS IN
AMORPHOUS SILICON". 22ND INTERNATIONAL CONFERENCE ON AMORPHOUS AND
NANOCRYSTALLINE SEMICONDUCTORS, BRECKENRIDGE, COLORADO, 2007, Denver
University, National Renewable sources Laboratory, USA , Extranjero , Simposium , Presentacion
invitada de T. V. Torchynska, Correlation between the photoluminescence and different types of Si
nanoclusters in amorphous silicon. 22nd International Conference on Amorphous and Nanocrystalline
Semiconductors, Breckenridge, Colorado, August
16/05/2007 ; PRESENTACION DE INVITADA, OPTICAL AND STRUCTURAL PROPERTIES OF SIC
NANOCRYSTALLS, XIV-TH SEMICONDUCTING AND INSULATING MATERIALS
CONFERENCE, SIMC XIV, MAY 15-20, 2007, FAYETTEVILLE, AR, USA., University of
Arkanzas, USA , Extranjero , Simposium , Presentacion de T. V. Torchynska, Optical and structural
properties of SiC nanocrystalls, XIV-th Semiconducting and Insulating Materials Conference, SIMC
XIV, May 15-20, 2007, Fayetteville, AR, USA.
15/05/2007 ; RESPONSABLE DEL PROGRAMA DE SECCION ¿LOW DIMENSIONAL
SEMICONDUCTOR NANOSTRUCTURES II¿¿, XIV-TH SEMICONDUCTING AND
INSULATING MATERIALS CONFERENCE, SIMC XIV, MAY 15-20, 2007, FAYETTEVILLE,
AR, USA., Universidad de Arkanzas, Fayetteville, AR, EE.UU. , Extranjero , Simposium , Responsable
del Programa de seccion ¿Low Dimensional Semiconductor Nanostructures II¿
XIV-th Semiconducting and Insulating Materials Conference, SIMC XIV, May 15-20, 2007, Fayetteville,
AR, USA.
15/11/2006 ; PRESENTACION DE "SIZE DEPENDENT ENERGY TREND FOR GROUND AND EXCITED
STATES IN INAS QUANTUM DOTS IN A WELL INGAAS-GAAS STRUCTURES", ESIME-IPN
, Nacional , Simposium , Presentacion de T. Torchynska a 9 Congreso Nacional de Ingenieria
electromecanica y de sistemas, Noviembre 13-17, 2006
15/11/2006 ; PRESENTACION DE "SIZE DEPENDENT PHOTOLUMINESCENCE OF SI
NANOCRYSTALS IN AMORPHOUS SILICON MATRIX", ESIME-IPN , Nacional , Simposium ,
Presentacion de T. Torchynska a 9 Congreso Nacional de Ingenieria electromecanica y de sistemas
17/10/2006 ; MIEMBRO DEL COMITE INTERNACIONAL DEL PROGRAMA DE CONFERENCIA
INTERNACIONAL DE FOTOELECTRICA. OCTUBRE 2-4, 2006,UZBEKISTAN, Academia de
Ciencias de Uzbekistan , Extranjero , Simposium , Member of International Advisory and Program
Committees
Comite International del Programa de Photoelectric Conference Internacional, Octubre 2-4,2006,
Uzbekistan
21/08/2006 ; PRESENTACION MAGISTRAL DE, "BALLISTIC EFFECT AND PHOTOLUMINESCENCE
OF SI NANOCRYSTALLITES", XV INTERNATIONAL MATERIAL RESEARCH CONGRESS,
20-24 AUGUST 2006, CAN CUN, MEXICO,, Academia Mexicana de Materiales , Nacional ,
Simposium , Presentacion magistral de T.V. Torchynska, Ballistic effect and photoluminescence of Si
nanocrystallites, XV International Material Research Congress, 20-24 August 2006, Can Cun, Mexico,
20/06/2006 ; PRESENTACION INVITADA DE T. TORCHYNSKA, EXCITON DYNAMICS IN INAS
QUANTUM DOTS EMBEDDED IN INGAAS/GAAS QUANTUM WELL STRUCTURES,
INTERNACIONAL WORKSHOP NANOMAT 2006, ANTALIA/TURKEY, JUNE 20-23, 2006,
Instambul University, Turkey , Extranjero , Simposium , Presentacion invitada de T. Torchynska, J. L.
Casas Espinola, Exciton dynamics in InAs quantum dots embedded in InGaAs/GaAs quantum well
structures, Internacional Workshop NANOMAT 2006, Antalia/Turkey, June 20-23, 2006
15/05/2006 ; COMITE DE EDITORES Y EVALUADORES DE CONFERENCIA NACIONAL DE FISICA Y
MATEMATICAS POR 70 ANOS DEL IPN, Instituto Politecnico Nacional , Nacional , Revistas de
Divulgación , Comite de Editores y Evaluadores del Libro de Memorias de Conferencia Nacional de
Fisica y Matematicas por 70 anos del IPN
10/05/2006 ; ARBITRO DE LOS TRABAJOS PRESENTADOS A 11 REUNION NACIONAL ACADEMICA
DE FISICA Y MATEMATICAS, ESFM-IPN , Nacional , Simposium , Arbitro de los trabajos
presentados a 11 Reunion Nacional Academica de fisica y Matematicas
03/05/2006 ; PRESENTACION INVITADA, BALLISTIC EFFECT AND PHOTOLUMINESCENCE OF SI
NANOCRYSTALLITE STRUCTURES, MEXICAN WORKSHOP ON NANOSTRUCTURED
MATERIALS, PUEBLO, MEXICO, MAY 2-4, 2006., BUAP, Pueblo, Mexico , Nacional ,
Simposium , Presentacion de T.V. Torchynska, Ballistic effect and photoluminescence of Si
nanocrystallite structures, Mexican workshop on Nanostructured Materials, Pueblo, Mexico, May 2-4,
2006.
15/03/2006 ; VICEPRESIDENTE DE CIENCIAS FISICO MATEMATICAS DEL CONSEJO DE
INVESTIGADORES POLITECNICOS, Sociedad de Profesores Investigadores del IPN , Nacional ,
Talleres , Vicepresidente de Ciencias Fisico Matematicas del Consejo de Investigadores Politecnicos
02/11/2005 ; LUZ Y FUTURO (ISSN 1665-2665), Instituto Politecnico Nacional , Nacional , Revistas de
Divulgación , Entrevista para Revista CONVERSACION del IPN
13/10/2005 ; PRESENTACION INVITADA, PHOTOLUMINESCENCE OF SI NANOCRYSTALLITES IN
DIFFERENT TYPES OF MATRICES, FIRST CONFERENCE ON ADVANCES IN OPTICAL
MATERIALS, TUCSON, ARIZONA, USA, OCTOBER 12-15, 2005,, Universidad de Tucson,
Arizona, USA , Extranjero , Simposium , Presentacion invitada T. Torchynska, Photoluminescence of Si
nanocrystallites in different types of matrices, First Conference on Advances in Optical Materials,
Tucson, Arizona, USA, October 12-15, 2005,
11/09/2005 ; PRESENTACION MAGISTRAL , PHOTOLUMINESCENCE MECHANISMS IN SI AND GE
NANOCRYSTALLITES EMBEDDED IN DIFFERENT TYPES OF MATRIXES,, Academia de
Ciencias de Hungaria , Extranjero , Simposium , Presentacion magistral de T. V. Torchynska,
Photoluminescence mechanisms in Si and Ge nanocrystallites embedded in different types of matrixes,
International Workshop on Semiconductor Nanocrystallites, SEMINANO2005, September 10-12, 2005,
Budapest,
25/07/2005 ; PRESENTACION INVITADA, "PHOTOLUMINESCENCE OF SI AND GE
NANOCRYTSALLITES", 23RD INTERN. CONFERENCE ON DEFECTS IN
SEMICONDUCTORS, ICDS-23, JULY24-29, 2005, AWAJI ISLAND, JAPAN, Universidad de
Awaji, Japan , Extranjero , Simposium , Presentacion invitada de T. V. Torchynska, Photoluminescence
of Si and Ge nanocrytsallites, 23rd Intern. Conference on Defects in Semiconductors, ICDS-23, July24-
29, 2005, Awaji Island, Japan.
28/09/2004 ; PRESENTACION MAGISTRAL « MECHANISMS OF PHOTOLUMINESCENCE OF SI OR GE
NANOCRYSTALLITES EMBEDDED IN DIFFERENT MATRIXES, XXIV CONGRESO
ANNUAL SOCIEDAD MEXICANO DE CIENCIA Y TECNOLOGIA DE SUPERFICIES Y
MATERIALES, QUINTANA ROO, SEPT. 2004, Sociedad Mexica SMCTSM A,C , Nacional ,
Simposium , Presentacion magistral de T.V. Torchynska « Mechanisms of photoluminescence of Si or
Ge nanocrystallites embedded in different matrixes, XXIV Congreso Annual Sociedad Mexicano de
Ciencia y Tecnologia de Superficies y Materiales, SMCTSM A,C. Quintana Roo, 2
20/07/2004 ; PRESENTACION INVITADA DE "PHOTOLUMINESCENCE MAPPING ON INAS/INGAAS
QUANTUM DOT STRUCTURES,", IEEE , Nacional , Simposium , Presentacion de T. V.
Torchynska, Photoluminescence mapping on InAs/InGaAs Quantum Dot Structures, Inter. Conference on
Superlattice, Nano-structures and Nano-devices, July 19-23, 2004, Can Cun, Mexico, 2004.
20/07/2004 ; PRESENTACION DE "PHOTOLUMINESCENCE AND PHOTOCURRENT OF SCHOTTKY
DIODES BASED ON SI NANOCRYSTALS", IEEE seccion Mexico, UAM, , Nacional , Simposium ,
Presentacion de T. Torchynska, Photoluminescence and photocurrent of Schottky diodes based on Si
nancrystallites, International Conference on Superlattices, Nano-structures and Nano-devices 2004, July
18-23, 2004, Can Cun, Mexico
26/08/2003 ; PRESENTACION INVITADA, HOT CARRIER BALLISTIC TRANSPORT AND
PHOTOLUMINESCENCE EXCITATION IN SILICON NANOCRYSTALLITES, ASTATPHYS-
MEX-2003, PUETRTO VALARTE, MEXICO AUGUST,25-29, 2003., Universidad Gvadalajara,
Mexico, PEMEX, , Nacional , Simposium , Presentacion invitada de T.V.Torchynska, Hot carrier
ballistic transport and photoluminescence excitation in silicon nanocrystallites, ASTATPHYS-Mex-2003,
Puetrto Valarte, Mexico August,25-29, 2003.
06/02/2003 ; EMISORES DEL LUZ DE SILICIO, "REFORMA" , Nacional , Medios Impresos , interview con
Claudia Macedo Ramires para "REFORMA"
08/03/1998 ; WOMEN AND FUTURE, Pechersk administration , Extranjero , Medios Impresos , Interview for
newspaper "Pechersk", Kiev, Ukraine
23/02/1996 ; 1995 STATE UKRAINIA PRIZE, Pechersk, newspaper , Nacional , Medios Impresos , Informacion
sobre Promias de Estado de Ukrania en Ciencias y Tecnologias que reciio de Dra T. V. Torchynska
05/02/1993 ; UKRAINIAN SCIENTISTS, Newpaper of Toronto University , Extranjero , Medios Impresos ,
Newpaper of Toronto University
13/10/1990 ; USSR CONFERENCIA DE FISICA DE SEMICONDUCTORES, Academia Nacional de Ciencias de
Ucrania , Extranjero , Revistas de Divulgación , Publisher Nauka, Revista de Fisica de Ucrania i libro de
memorias
02/02/1990 ; LASERES DE NUEVO GENERACION, Academia Nacional de Ciencias de Ucrania , Extranjero ,
Revistas de Divulgación , Revista de Fisica de Ucrania
02/02/1980 ; FORECAST PARA II-VI SEMICONDUCTORS, Academia Nacional de Ciencias de Ucrania ,
Extranjero , Revistas de Divulgación , Revista Fisica de Ucrania