MOSFET CoolMOS™ CE - Infineon Technologies

MOSFETMetalOxideSemiconductorFieldEffectTransistor

CoolMOS™CE800VCoolMOS™CEPowerTransistorIPA80R310CE

DataSheetRev.2.1Final

PowerManagement&Multimarket

2

800VCoolMOS™CEPowerTransistor

IPA80R310CE

Rev.2.1,2015-06-23Final Data Sheet

TO-220FP

DrainPin 2, Tab

GatePin 1

SourcePin 3

1DescriptionCoolMOS™CEisarevolutionarytechnologyforhighvoltagepowerMOSFETs.Thehighvoltagecapabilitycombinessafetywithperformanceandruggednesstoallowstabledesignsathighestefficiencylevel.CoolMOS™800VCEcomeswithselectedpackagechoiceofferingthebenefitofreducedsystemcostsandhigherpowerdensitydesigns.

Features•Highvoltagetechnology•Extremedv/dtrated•Highpeakcurrentcapability•Lowgatecharge•Loweffectivecapacitances•Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound•Qualifiedforconsumergradeapplications

ApplicationsLEDLightingandAdapterinQRFlybacktopology

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj=25°C 800 V

RDS(on),max 310 mΩ

Qg.typ 91 nC

ID,pulse 51 A

Eoss@400V 6.7 µJ

Body diode di/dt 400 A/µs

Type/OrderingCode Package Marking RelatedLinksIPA80R310CE PG-TO 220 FullPAK 8R310CE see Appendix A

3


IPA80R310CE


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4


IPA80R310CE


2MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

16.710.6 A TC = 25°C

TC = 100°C

Pulsed drain current2) ID,pulse - - 51 A TC=25°C

Avalanche energy, single pulse EAS - - 670 mJ ID=3.4A; VDD=50V; see table 10

Avalanche energy, repetitive EAR - - 0.50 mJ ID=3.4A; VDD=50V; see table 10

Avalanche current, repetitive IAR - - 3.40 A -

MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...640V

Gate source voltage (static) VGS -20 - 20 V static;

Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)

Power dissipation Ptot - - 35 W TC=25°C

Storage temperature Tstg -40 - 150 °C -

Operating junction temperature Tj -40 - 150 °C -

Mounting torque - - - 50 Ncm M2.5 screws

Continuous diode forward current IS - - 16.7 A TC=25°C

Diode pulse current2) IS,pulse - - 51 A TC=25°C

Reverse diode dv/dt3) dv/dt - - 4 V/ns VDS=0...400V,ISD<=IS,Tj=25°Csee table 8

Maximum diode commutation speed dif/dt - - 400 A/µs VDS=0...400V,ISD<=IS,Tj=25°Csee table 8

Insulation withstand voltage forTO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min

1) Limited by Tj max <150°C.2) Pulse width tp limited by Tj,max3)IdenticallowsideandhighsideswitchwithidenticalRG

5


IPA80R310CE


3Thermalcharacteristics

Table3ThermalcharacteristicsTO-220FullPAKValues


Thermal resistance, junction - case RthJC - - 3.6 °C/W -

Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

6


IPA80R310CE


4ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 800 - - V VGS=0V,ID=0.25mA

Gate threshold voltage V(GS)th 2.1 3.0 3.9 V VDS=VGS,ID=1mA

Zero gate voltage drain current IDSS --

--

25250 µA VDS=800,VGS=0V,Tj=25°C

VDS=800,VGS=0V,Tj=150°C

Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.250.78

0.31- Ω VGS=10V,ID=11A,Tj=25°C

VGS=10V,ID=11A,Tj=150°C

Gate resistance RG - 0.7 - Ω f=1MHz,opendrain

Table5DynamiccharacteristicsValues


Input capacitance Ciss - 2320 - pF VGS=0V,VDS=100V,f=1MHz

Output capacitance Coss - 90 - pF VGS=0V,VDS=100V,f=1MHz

Effective output capacitance, energy related1) Co(er) - 59 - pF VGS=0V,VDS=0...480V

Effective output capacitance, time related2) Co(tr) - 124 - pF ID=constant,VGS=0V,VDS=0...480V

Turn-on delay time td(on) - 25 - ns VDD=400V,VGS=10V,ID=16.7A,RG=4.7Ω;seetable9

Rise time tr - 15 - ns VDD=400V,VGS=10V,ID=16.7A,RG=4.7Ω;seetable9

Turn-off delay time td(off) - 72 - ns VDD=400V,VGS=10V,ID=16.7A,RG=4.7Ω;seetable9

Fall time tf - 6 - ns VDD=400V,VGS=10V,ID=16.7A,RG=4.7Ω;seetable9

Table6GatechargecharacteristicsValues


Gate to source charge Qgs - 12 - nC VDD=640V,ID=16.7A,VGS=0to10V

Gate to drain charge Qgd - 46 - nC VDD=640V,ID=16.7A,VGS=0to10V

Gate charge total Qg - 91 - nC VDD=640V,ID=16.7A,VGS=0to10V

Gate plateau voltage Vplateau - 6.0 - V VDD=640V,ID=16.7A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V

7


IPA80R310CE


Table7ReversediodecharacteristicsValues


Diode forward voltage VSD - 1 - V VGS=0V,IF=16.7A,Tj=25°C

Reverse recovery time trr - 550 - ns VR=400V,IF=16.7A,diF/dt=100A/µs;see table 8

Reverse recovery charge Qrr - 15 - µC VR=400V,IF=16.7A,diF/dt=100A/µs;see table 8

Peak reverse recovery current Irrm - 51 - A VR=400V,IF=16.7A,diF/dt=100A/µs;see table 8

8


IPA80R310CE


5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

5

10

15

20

25

30

35

40

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

1021 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-1 100 10110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

9


IPA80R310CE


Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 20 250

10

20

30

40

50

60

20 V10 V

6.5 V

6 V

5.5 V

5 V

ID=f(VDS);Tj=25°C;tp=10µs;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 20 250

5

10

15

20

25

30

35

20 V

10 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=150°C;tp=10µs;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 10 20 30 400.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

4 V 4.5 V 5 V 5.5 V 6 V 6.5 V

10 V

RDS(on)=f(ID);Tj=150°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [Ω]

-50 -25 0 25 50 75 100 125 1500.10

0.20

0.30

0.40

0.50

0.60

0.70

0.80

98% typ

RDS(on)=f(Tj);ID=11.0A;VGS=10V

10


IPA80R310CE


Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 100

10

20

30

40

50

60

150 °C

25 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;tp=10µs;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 20 40 60 80 1000

1

2

3

4

5

6

7

8

9

10

160 V 640 V

VGS=f(Qgate);ID=17Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.010-1

100

101

102

25 °C150 °C

IF=f(VSD);tp=10µs;parameter:Tj

Diagram12:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

100

200

300

400

500

600

700

EAS=f(Tj);ID=3.4A;VDD=50V

11


IPA80R310CE


Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-75 -50 -25 0 25 50 75 100 125 150 175680

700

720

740

760

780

800

820

840

860

880

900

920

940

960

VBR(DSS)=f(Tj);ID=0.25mA

Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 500100

101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 500 600 700 80001234567891011121314151617

Eoss=f(VDS)

12


IPA80R310CE


6TestCircuits

Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

t

V ,I

Irrm

IF

VDS

10 %Irrm

trrtF tS

QF QS

dIF / dt

dIrr / dt

VDS(peak)

Qrr = QF +QS

trr =tF +tS

VDS

IF

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

13


IPA80R310CE


7PackageOutlines

'$

+

9

)

;

9$

*

=#

=

.

3

@3

.#

0

)#

'

),/

'#

)1(7/*06 01"

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2.5

4*8,5,10

04

05-05-2014

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*7412*'0 241-*(6,10

1.130

0.177

MIN

0.095

0.026

0.016

0.617

0.037

0.092

0.394

0.503

0.116

0.124

0.111

0.353

2.862.42

2.54 (BSC)

5.08

28.70

0.95

15.67

0.40

0.65

10.00

2.83

3.15

2.95

12.78

8.97

3

29.75

0.90

0.63

1.51

16.15

3.50

3.38

3.45

13.75

10.65

9.83

/,..,/*6*45

MIN

4.50

2.34

MAX

4.90

2.85

0.113

0.100 (BSC)

0.200

3

1.171

0.059

0.636

0.025

0.035

0.419

0.136

0.133

0.138

0.541

0.387

0

,0(+*5

0.193

MAX

0.112

5('.*

5mm

0

2.59# 0.0370.95 1.38 0.054

9& 0.0260.65 1.51 0.059

9% 0.0260.65 1.38 0.054

Dimensions do not include mold flash, protrusions or gate burrs

Figure 1 Outline PG-TO 220 FullPAK, dimensions in mm/inches

14

800V CoolMOS™ CE Power Transistor

IPA80R310CE

Rev. 2.1, 2015-06-23Final Data Sheet

8 Appendix A

Table 11 Related Links

• IFX CoolMOS TM CE Webpage: www.infineon.com

• IFX CoolMOS TM CE application note: www.infineon.com

• IFX CoolMOS TM CE simulation model: www.infineon.com

• IFX Design tools: www.infineon.com

http://www.infineon.com/cms/en/product/promopages/designtools/index.html

http://www.infineon.com/CE



15

800V CoolMOS™ CE Power Transistor

IPA80R310CE

Rev. 2.1, 2015-06-23Final Data Sheet

Revision History

IPA80R310CE

Revision: 2015-06-23, Rev. 2.1

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2014-09-25 Release of final version

2.1 2015-06-23 Continuous current Id update

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Published byInfineon Technologies AG81726 München, Germany© 2015 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Withrespect to any examples or hints given herein, any typical values stated herein and/or any information regarding the applicationof the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including withoutlimitation, warranties of non-infringement of intellectual property rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest InfineonTechnologies Office (www.infineon.com ).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question,please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/orautomotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if afailure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation andaerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems areintended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it isreasonable to assume that the health of the user or other persons may be endangered.

MOSFET CoolMOS™ CE - Infineon Technologies

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