SPN9971 Mosfet Radio Sur

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SPN9971N-Channel Enhancement Mode MOSFET

DESCRIPTION APPLICATIONS

The SPN9971 is the N-Channel logic enhancement mode

power field effect transistors are produced using high cell

density , DMOS trench technology. The SPN9971 has

been designed specifically to improve the overall

efficiency of DC/DC converters using either synchronous

or conventional switching PWM controllers. It has been

optimized for low gate charge, low RDS(ON) and fast

switching speed.

Power Management in Note book

Powered System DC/DC Converter Load Switch

FEATURES PIN CONFIGURATION

TO-252 TO-251

PART MARKING

60V/16A,RDS(ON)= 40m@VGS=10V

60V/12A,RDS(ON)= 45m@VGS=4.5V

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

TO-252,TO-251 package design


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PIN DESCRIPTION

Pin Symbol Description

1 G Gate

2 S Source

3 D Drain

ORDERING INFORMATION

Part Number Package Part Marking

SPN9971T252RGB TO-252 SPN9971

SPN9971T251TGB TO-251 SPN9971

SPN9971T252RGB : Tape Reel ; Pb Free ; Halogen - Free SPN9971T251RGB : Tube ; Pb Free ; Halogen - Free

ABSOULTE MAXIMUM RATINGS

(TA=25 Unless otherwise noted)

Parameter Symbol Typical Unit

Drain-Source Voltage VDSS 60 V

Gate Source Voltage VGSS 20 V

TA=25 25Continuous Drain Current

TA=100ID

16A

Pulsed Drain Current IDM 80 A

Avalanche Current IAS 25 A

TO-252-2L 40

Power Dissipation TA=25TO-251

PD55

W

Operating Junction Temperature TJ 150

Storage Temperature Range TSTG -55/150

Thermal Resistance-Junction to Ambient RJA 100 /W


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ELECTRICAL CHARACTERISTICS

(TA=25 Unless otherwise noted)

Parameter Symbol Conditions Min. Typ Max. Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 60

Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 0.8 2.0V

Gate Leakage Current IGSS VDS=0V,VGS=20V 100 nA

VDS=60V,VGS=0V 1

Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V

TJ=855

uA

On-State Drain Current ID(on) VDS5V,VGS=10V 30 A

VGS= 10V,ID=16A 0.038 0.040Drain-Source On-Resistance RDS(on)

VGS=4.5V,ID=12A 0.042 0.045

Forward Transconductance gfs VDS=15V,ID=5.3A 24 S

Diode Forward Voltage VSD IS=2.0A,VGS=0V 0.8 1.2 V

Dynamic

Total Gate Charge Qg 10 15

Gate-Source Charge Qgs 3.5

Gate-Drain Charge Qgd

VDS=30V,VGS=5V

ID= 5.3A3.6

nC

Input Capacitance Ciss 890

Output Capacitance Coss 85

Reverse Transfer Capacitance Crss

VDS=30V,VGS=0V

f=1MHz48

pF

td(on) 10 15Turn-On Time

tr 12 20

td(off) 25 35Turn-Off Time

tf

VDD=30V,RL=6.8

ID4.4A,VGEN=10V

RG=1

10 15

nS


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TYPICAL CHARACTERISTICS


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TO-252 PACKAGE OUTLINE


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TO-251 PACKAGE OUTLINE


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Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the

penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditionsmentioned in this publication are subject to change without notice. This publication surpasses and replaces all informationpreviously supplied. SYNC Power Corporation products are not authorized for use as critical components in life supportdevices or systems without express written approval of SYNC Power Corporation.

The SYNC Power logo is a registered trademark of SYNC Power Corporation2004 SYNC Power Corporation Printed in Taiwan All Rights Reserved

SYNC Power Corporation9F-5, No.3-2, Park Street

NanKang District (NKSP), Taipei, Taiwan 115Phone: 886-2-2655-8178

Fax: 886-2-2655-8468

http://www.syncpower.com

SPN9971 Mosfet Radio Sur

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