TRAVAIL DEMANDÉ -...

Terminale STI Électronique Système technique : « Pousse Seringue » /2

TD transistor MOSFET

G BERTHOME/F MANDIN

TRAVAIL DEMANDÉ

Soit le schéma structurel suivant :

Le fonctionnement du relais bistable(RL1S, RL1R, RL1A :B, RL1B :B) est le suivant : -si aucun relais est commandé alors les interrupteurs RL1A :B et RL1B :B sont dans l’état de repos, -si le relais RL1 :S est commandé alors les interrupteurs RL1A :B et RL1B :B passent en position de travail, -si le relais RL1 :R est commandé alors les interrupteurs RL1A :B et RL1B :B reviennent en position repos.

Question1 Quelle est la technologie et le type du transistor T1 ? Quelle est la technologie et le type du transistor T2 ?

Question2 Décrire le fonctionnement des transistors T1 et T2.

Analyse qualitative :

Question3 Remplir le tableau 1 du document réponse 1. Justifier tous les résultats.

Question4 Remplir le tableau 2 du document réponse 1 (on considère que la Touche ON a été

appuyée puis relâchée auparavant). Justifier tous les résultats.

Question5 Remplir les chronogrammes du document réponse 2. Justifier tous les chronogrammes (on donne PB5=NL0).

Question6 Déterminer la durée à partir de laquelle le système technique ne sera plus alimenté.

Question7 Donner le rôle de D4.

Terminale STI Électronique Système technique : « Pousse Seringue » /2

TD transistor MOSFET

G BERTHOME/F MANDIN

Document réponse 1

Tableau1

Touche ON Etat T1 Alim Moteur VCC Relâchée Appuyée

Tableau2

Touche OFF Etat T2 Alim Moteur VCC

Relâchée Appuyée

Document réponse 2

t(s)

t(s)

t(s)

Touche ON

Touche OFF

Etat D4

t(s)

Etat T1

t(s)

Etat T2

t(s)

Etat RL1 :S

t(s)

Etat RL1 :R

VGS(T1)

VGS(T2)

Alim moteur

VCC

t(s)

t(s)

Semiconductor Components Industries, LLC, 2000

November, 2000 – Rev. 21 Publication Order Number:

BS170/D

BS170Preferred Device

Small Signal MOSFET500 mAmps, 60 VoltsN–Channel TO–92

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage VDS 60 Vdc

Gate–Source Voltage– Continuous– Non–repetitive (tp ≤ 50 µs)

VGSVGSM

±20±40

VdcVpk

Drain Current (Note 1.) ID 0.5 Adc

Total Device Dissipation @ TA = 25°C PD 350 mW

Operating and Storage JunctionTemperature Range

TJ, Tstg –55 to+150

°C

1. The Power Dissipation of the package may result in a lower continuous draincurrent.

ORDERING INFORMATION

See detailed ordering and shipping information in the packagedimensions section on page 2 of this data sheet.

BS170

Y = YearWW = Work Week

YWW

http://onsemi.com

MARKING DIAGRAM& PIN ASSIGNMENT

D

G

TO–92CASE 29Style 30

N–Channel

S

1 23

1Drain

3Source

2Gate

500 mAMPS60 VOLTS

RDS(on) = 5 Ω

Preferred devices are recommended choices for future useand best overall value.

BS170

http://onsemi.com2

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Gate Reverse Current(VGS = 15 Vdc, VDS = 0)

IGSS – 0.01 10 nAdc

Drain–Source Breakdown Voltage(VGS = 0, ID = 100 µAdc)

V(BR)DSS 60 90 – Vdc

ON CHARACTERISTICS (Note 2.)

Gate Threshold Voltage(VDS = VGS, ID = 1.0 mAdc)

VGS(Th) 0.8 2.0 3.0 Vdc

Static Drain–Source On Resistance(VGS = 10 Vdc, ID = 200 mAdc)

rDS(on) – 1.8 5.0 Ω

Drain Cutoff Current(VDS = 25 Vdc, VGS = 0 Vdc)

ID(off) – – 0.5 µA

Forward Transconductance(VDS = 10 Vdc, ID = 250 mAdc)

gfs – 200 – mmhos

SMALL–SIGNAL CHARACTERISTICS

Input Capacitance(VDS = 10 Vdc, VGS = 0, f = 1.0 MHz)

Ciss – – 60 pF

SWITCHING CHARACTERISTICS

Turn–On Time(ID = 0.2 Adc) See Figure 1

ton – 4.0 10 ns

Turn–Off Time(ID = 0.2 Adc) See Figure 1

toff – 4.0 10 ns

2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.

ORDERING INFORMATION

Device Package Shipping

BS170 TO–92 1000 Unit/Box

BS170RLRA TO–92 2000 Tape & Reel

BS170RLRM TO–92 2000 Ammo Pack

BS170RLRP TO–92 2000 Ammo Pack

BS170RL1 TO–92 2000 Tape & Reel

BS170ZL1 TO–92 2000 Ammo Pack

BS170

http://onsemi.com3

, DR

AIN

CU

RR

EN

T (A

MP

S)

D(o

n)I

, DR

AIN

CU

RR

EN

T (A

MP

S)

D(o

n)I

Figure 1. Switching Test Circuit

20 dB

50 Ω ATTENUATORPULSE GENERATOR

+25 V

Vin

40 pF

1.0 MΩ50 Ω

125 Ω

50 Ω

Vout

TO SAMPLING SCOPE

50 Ω INPUT

OUTPUT

INVERTED

INPUTPULSEWIDTH

10%

50%10%

90%

90%

toffton

Figure 2. Switching Waveforms

RESISTIVE SWITCHING

(Vin Amplitude 10 Volts)

Vin

Vout

2.0

1.6

1.2

0.8

0.4

0

, TH

RE

SH

OLD

VO

LTA

GE

50 1500 50 100

TJ, JUNCTION TEMPERATURE (°C)

VG

S(t

h)

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

0.8

0.4

1.2

2.0

1.6

1.0 2.0 3.0 4.00


0.8

0.4

1.2

1.6

2.0

0 10 20 30


C, C

AP

AC

ITA

NC

E (

pF)

0 10 20 30 40 50

60

40

20

80

100

40 60

Figure 3. V GS(th) Normalized versus Temperature Figure 4. On–Region Characteristics

Figure 5. Output Characteristics Figure 6. Capacitance versusDrain–To–Source Voltage

VGS = 10 V

VGS = 0 V

Ciss

Coss

Crss

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

4.0 V

VDS = VGSID = 1.0 mA

VGS = 10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

4.0 V

BS170

http://onsemi.com4

PACKAGE DIMENSIONS

STYLE 30:PIN 1. DRAIN

2. GATE3. SOURCE

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

R

A

P

J

L

B

K

GH

SECTION X–X

CV

D

N

N

X X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.175 0.205 4.45 5.20

B 0.170 0.210 4.32 5.33

C 0.125 0.165 3.18 4.19

D 0.016 0.021 0.407 0.533

G 0.045 0.055 1.15 1.39

H 0.095 0.105 2.42 2.66

J 0.015 0.020 0.39 0.50

K 0.500 --- 12.70 ---

L 0.250 --- 6.35 ---

N 0.080 0.105 2.04 2.66

P --- 0.100 --- 2.54

R 0.115 --- 2.93 ---

V 0.135 --- 3.43 ---1

TO–92CASE 29–11

ISSUE AL

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changeswithout further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particularpurpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must bevalidated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury ordeath may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and holdSCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonableattorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claimalleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATIONCENTRAL/SOUTH AMERICA:Spanish Phone : 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)

Email : ONlit–[email protected]–Free from Mexico: Dial 01–800–288–2872 for Access –

then Dial 866–297–9322

ASIA/PACIFIC : LDC for ON Semiconductor – Asia SupportPhone : 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)

Toll Free from Hong Kong & Singapore:001–800–4422–3781

Email : ONlit–[email protected]

JAPAN : ON Semiconductor, Japan Customer Focus Center4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031Phone : 81–3–5740–2700Email : [email protected]

ON Semiconductor Website : http://onsemi.com

For additional information, please contact your localSales Representative.

BS170/D

NORTH AMERICA Literature Fulfillment :Literature Distribution Center for ON SemiconductorP.O. Box 5163, Denver, Colorado 80217 USAPhone : 303–675–2175 or 800–344–3860 Toll Free USA/CanadaFax: 303–675–2176 or 800–344–3867 Toll Free USA/CanadaEmail : [email protected] Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada

N. American Technical Support : 800–282–9855 Toll Free USA/Canada

EUROPE: LDC for ON Semiconductor – European SupportGerman Phone : (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)

Email : ONlit–[email protected] Phone : (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)

Email : ONlit–[email protected] Phone : (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)

Email : [email protected]

EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781*Available from Germany, France, Italy, UK, Ireland

BS250Vishay Semiconductorsformerly General Semiconductor

Document Number 88180 www.vishay.com10-May-02 1

DMOS Transistor (P-Channel)

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage –VDSS 60 V

Drain-Gate Voltage –VDGS 60 V

Gate-Source-Voltage (pulsed) VGS ±20 V

Drain Current (continuous) –ID 250 mA

Power Dissipation at Tamb = 25°C Ptot 0.83(1) W

Thermal Resistance Junction to Ambient Air RθJA 150(1) °C/W

Junction Temperature Tj 150 °C

Storage Temperature Range TS –65 to +150 °C

Note:(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.

Features• High input impedance• High-speed switching• No minority carrier storage time• CMOS logic compatible input• No thermal runaway• No secondary breakdown• On special request, this transistor is also

manufactured in the pin configuration TO-18.

Mechanical DataCase: TO-92 Plastic PackageWeight: approx. 0.18 gramsPackaging Codes/Options:

E6/Bulk- 5K per container, 20K/boxE7/4K per Ammo tape, 20K/box

TO-226AA (TO-92)

0.181 (4.6)

min

. 0.4

92 (

12.5

)0.

181

(4.6

)

0.142 (3.6)

0.098 (2.5)

max. ∅ 0.022 (0.55)

Bottom View

Dimensions in inchesand (millimeters)


www.vishay.com Document Number 881802 10-May-02

Electrical Characteristics (TJ = 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit

Drain-Source Breakdown Voltage –V(BR)DSS –ID = 100µA, VGS = 0 60 70 — V

Gate-Source Threshold Voltage –VGS(th) VGS = VDS, –ID = 1mA 1.0 2.0 3.0 V

Gate-Body Leakage Current –IGSS –VGS = 15V, VDS = 0 — — 20 nA

Drain Cutoff Current –IDSS –VDS = 25V, VGS = 0 — — 0.5 µA

Drain-Source ON Resistance RDS(on) –VGS = 10V, –ID = 0.2A — 3.5 5.0 Ω

Forward Transconductance gm–VDS = 10V, –ID = 0.2A

— 150 — mSf = 1MHz

Input Capacitance Ciss–VDS = 10V, VGS = 0, — 60 — pF

f = 1MHz

Turn-On Time ton –VGS = 10V, –VDS = 10V — 5 — ns

Turn-Off Time toff RD = 100Ω — 25 — ns

Inverse DiodeParameters Symbol Test Condition Value Unit

Maximum Forward Current (continuous) IF Tamb = 25°C 0.3 A

Forward Voltage Drop (typ.) VFVGS = 0, IF = 0.12A

0.85 VTj = 25°C



Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)


www.vishay.com Document Number 881804 10-May-02


High sensitivity – can be driven by digitalcircuits

Low-profile design allows use in 12.70 mm(0.50 in) PC board rack

Surge withstand voltage meets FCC Part 68regulation

Units can be mounted side by side due tolow magnetic leakage

Special models available for ultrasoniccleaning and low thermoelectromotive force

Unique moving loop (permanent magnet)armature reduces relay size, magneticinterference, and contact bounce time

Single or double coil winding types available

Low Signal Relay G6A

Ordering Information

Part number

Type Contact form AgPd (Au clad) Ag (Au clad)

Standard DPDT G6A-234P-ST-US G6A-274P-ST-US

4PDT G6A-434P-ST-US G6A-474P-ST-US

High-sensitivity DPDT G6A-234P-ST15-US G6A-274P-ST15-US

4PDT G6A-434P-ST20-US G6A-474P-ST20-US

Low-sensitivity DPDT G6A-234P-ST40-US G6A-274P-ST40-US

4PDT G6A-434P-ST40-US G6A-474P-ST40-US

To Order: Select the part number and add the desired coil voltage rating, (e.g., G6A-274P-ST-US-DC12).

NON-LATCHING

Part number


Standard DPDT G6AU-234P-ST-US G6AU-274P-ST-US

4PDT G6AU-434P-ST-US G6AU-474P-ST-US

LATCHING

Single coil

Part number


Standard DPDT G6AK-234P-ST-US G6AK-274P-ST-US

4PDT G6AK-434P-ST-US G6AK-474P-ST-US

Low-sensitivity DPDT G6AK-234P-ST40-US G6AK-274P-ST40-US

4PDT G6AK-434P-ST40-US G6AK-474P-ST40-US

Dual coil

Note: Other options available for ST10 ultra high reliability, high temperature 85°C (185°F), ST1 reverse coil polarity, BS Britishstandard. Contact your OMRON sales representative for details.

2

G6A G6A

Specifications CONTACT DATA

Type G6A-234P-ST(15, 40)-US, G6A-434P-ST(20, 40)-US G6A-274P-ST(15, 40)-US, G6A-474P-ST(20, 40)-USG6AK-234P-ST(40)-US, G6AK-434P-ST(40)-US G6AK-274P-ST(40)-US, G6AK-474P-ST(40)-USG6AU-234P-ST-US, G6AU-434P-ST-US G6AU-274P-ST-US, G6AU-474P-ST-US

Load Resistive load (p.f. = 1) Inductive load (p.f. = 0.4) Resistive load (p.f. = 1) Inductive load (p.f. = 0.4)(L/R = 7 ms) (L/R = 7 ms)

Rated load 0.30 A at 125 VAC, 0.20 A at 125 VAC, 0.50 A at 125 VAC, 0.25 A at 125 VAC,1 A at 30 VDC 0.50 A at 30 VDC 2 A at 30 VDC 1 A at 30 VDC

Contact material AgPd (Au clad) AgPd (Au clad) Ag (Au clad) Ag (Au clad)

Carry current 3 A 3 A 3 A 3 A

Max. operating voltage 250 VAC, 220 VDC 250 VAC, 220 VDC 250 VAC, 220 VDC 250 VAC, 220 VDC

Max. operating current 2 A 1 A 2 A 1 A

Max. switching capacity 125 VA, 60 W 62.50 VA, 30 W 125 VA, 60 W 62.50 VA, 30 W

Min. permissible load 10 µA, 10 mVDC 10 µA, 10 mVDC 10 µA, 10 mVDC 10 µA, 10 mVDC

Note: The rated current and coil resistance are measured at a coil temperature of 23°C (73°F) with a tolerance of ±10%.

COIL DATA

Standard non-latching DPDT (G6A-234P-ST-US, G6A-274P-ST-US)

Coil inductance

Rated Rated Coil (ref. value) (H) Pick-up Dropout Maximum Powervoltage current resistance Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON % of rated voltage (mW)

3 66.70 45 0.07 0.07 70% max. 10% min. 200% Approx. 200

5 40 125 0.20 0.18 at 23°C

6 33.30 180 0.29 0.26 (73°F)

9 22.20 405 0.63 0.57

12 16.70 720 1.10 1.06 150%

24 8.30 2,880 4.50 4.10 at 70°C

48 4.90 9,750 13.70 12.50 (158°F) Approx. 235

High-sensitivity non-latching DPDT (G6A-234P-ST15-US, G6A-274P-ST15-US)

Coil inductance


1.50 100 15 0.02 0.02 80% max. 10% min. 200% Approx. 150

3 50 60 0.09 0.08

4.50 33.30 135 0.22 0.20

5 30 167 0.25 0.21

6 25 240 0.35 0.31

9 16.70 540 0.80 0.70

12 12.50 960 1.35 1.25

24 6.30 3,840 5.60 5.10

48 3.20 15,000 22.50 20.00

3

G6A G6A


COIL DATA (continued)

Low-sensitivity non-latching DPDT (G6A-234P-ST40-US, G6A-274P-ST40-US)

Coil inductance


3 133.30 22.50 0.03 0.02 70% max. 10% min. 150% Approx. 400

5 80 62.50 0.08 0.07 at 23°C

6 66.70 90 0.11 0.10 (73°F)

9 44.30 203 0.27 0.23

12 33.30 360 0.52 0.43 110%

24 16.70 1,440 2.10 1.80 at 70°C

48 8.30 5,760 7.50 6.40 (158°F)

Standard non-latching 4PDT (G6A-434P-ST-US, G6A-474P-ST-US)

Coil inductance


3 120 25 0.05 0.05 70% max. 10% min. 150% Approx. 360

5 72.50 69 0.14 0.12 at 23°C

6 60 100 0.20 0.17 (73°F)

9 40 225 0.45 0.38

12 30 400 0.80 0.68 110% max.

24 15 1,600 3.20 2.70 at 70°C

48 7.50 6,400 12.80 10.90 (158°F)

High-sensitivity non-latching 4PDT (G6A-434P-ST20-US, G6A-474P-ST20-US)

Coil inductance


3 66.70 45 — — 70% max. 10% min. 200% max. Approx. 200

5 40 125 — — at 50°C

6 33.30 180 — — (122°F)

9 22.20 405 — —

12 16.70 720 — —

24 8.30 2,880 — —

48 4.20 11,520 — —

Low-sensitivity non-latching 4PDT (G6A-434P-ST40-US, G6A-474P-ST40-US)

Coil inductance


3 133.30 22.50 0.04 0.02 70% max. 10% min. 150% Approx. 400

5 80 62.50 0.12 0.09 at 23°C

6 66.70 90 0.17 0.13 (73°F)

9 44.30 203 0.42 0.30

12 33.30 360 0.70 0.52 110% max.

24 16.70 1,440 2.80 2.20 at 70°C

48 8.30 5,760 10.20 8.60 (158°F)

4

G6A G6A



Standard single coil latching DPDT (G6AU-234P-ST-US, G6AU-274P-ST-US)

Coil inductance Set ResetRated Rated Coil (ref. value) (H) pick-up pick-up Maximum Powervoltage current resistance Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON % of rated voltage (mW)

3 33.70 89 0.15 0.11 70% max. 70% max. 200% Approx. 100

5 20 250 0.44 0.35 at 23°C

6 16.70 360 0.64 0.48 (73°F)

9 11.10 810 1.38 1.07

12 8.30 1,440 2.50 2 150%

24 4.20 5,760 9.20 7.20 at 70°C

48 2.50 19,000 28.50 22 (158°F) Approx. 120

Standard dual coil latching DPDT (G6AK-234P-ST-US, G6AK-274P-ST-US)

Coil inductance (ref. value) (H) Set ResetRated Rated Coil Set coil Reset coil pick-up pick-up Maximum Powervoltage current resistance Armature Armature Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON OFF ON % of rated voltage (mW)

3 66.70 45 0.04 0.03 0.03 0.04 70% max. 70% max. 200% Approx. 200

5 36 139 0.11 0.08 0.08 0.11 at 23°C

6 30 200 0.16 0.12 0.12 0.16 (73°F)

9 20 450 0.38 0.28 0.28 0.38 Approx. 180

12 15 800 0.60 0.45 0.45 0.60 150% max.

24 7.50 3,200 2.10 1.50 1.50 2.10 at 70°C

48 4.20 11,520 8.50 6.30 6.30 8.50 (158°F) Approx. 200

Dual coil latching low-sensitivity DPDT (G6AK-234P-ST40-US, G6AK-274P-ST40-US)


3 120 25 0.02 0.01 0.01 0.02 70% max. 70% max. 150% max. Approx. 360

5 72.50 69 0.05 0.04 0.04 0.05 at 23°C

6 60 100 0.07 0.05 0.05 0.07 (73°F)

9 40 225 0.16 0.12 0.12 0.16

12 30 400 0.28 0.20 0.20 0.28 110% max.

24 15 1,600 1.10 0.75 0.75 1.10 at 70°C

48 7.50 6,400 4 2.90 2.9 4 (158°F)

5

G6A G6A



Standard single coil latching 4PDT (G6AU-434P-ST-US, G6AU-474P-ST-US)

Coil inductance Set ResetRated Rated Coil (ref. value) (H) pick-up pick-up Maximum Powervoltage current resistance Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON % of rated voltage (mW)

3 106.80 28.10 0.03 0.02 70% max. 70% max. 150% Approx. 320

5 64 78.10 0.08 0.06 at 23°C

6 53.30 112.50 0.11 0.08 (73°F)

9 35.60 253 0.25 0.18

12 26.70 450 0.45 0.32 110%

24 13.30 1,800 1.80 1.30 at 70°C

48 6.70 7,200 7.00 5.20 (158°F)

Standard dual coil latching 4PDT (G6AK-434P-ST-US, G6AK-474P-ST-US)


3 106.80 28.10 0.03 0.02 0.02 0.03 70% max. 70% max. 150% Approx. 320

5 64 78.10 0.08 0.06 0.06 0.08 at 23°C

6 53.30 112.50 0.11 0.08 0.08 0.11 (73°F)

9 35.60 253 0.25 0.18 0.18 0.25

12 26.70 450 0.45 0.32 0.32 0.45 110% max.

24 13.30 1,800 1.80 1.30 1.30 1.80 at 70°C

48 6.70 7,200 7.00 5.20 5.20 7.00 (158°F)

Dual coil latching low-sensitivity 4PDT (G6AK-434P-ST40-US, G6AK-474P-ST40-US)


3 120 25 0.02 0.02 0.02 0.02 70% max. 70% max. 150% max. Approx. 360

5 72.50 69 0.07 0.05 0.05 0.07 at 23°C

6 60 100 0.09 0.08 0.08 0.09 (73°F)

9 40 225 0.18 0.14 0.14 0.18

12 30 400 0.30 0.23 0.23 0.30 110% max.

24 15 1,600 1.20 0.82 0.82 1.20 at 70°C

48 7.50 6,400 4.40 3.20 3.20 4.40 (158°F)

6

G6A G6A

Type Non-latching Latching

Contact resistance 50 mΩ max.

Operate (set) time DPDT 5 ms max. (mean value: approx. 3 ms) 5 ms max. (mean value: approx. 2.50 ms)

4PDT 7 ms max. (mean value: approx. 3.80 ms) 7 ms max. (mean value: approx. 3.30 ms)

Release (reset) time DPDT 3 ms max. (mean value: approx. 1.20 ms) 5 ms max. (mean value: approx. 2.50 ms)

4PDT 5 ms max. (mean value: approx. 1.30 ms) 7 ms max. (mean value: approx. 2.70 ms)

Bounce time Operate Actual value approx. 0.50 ms

Release Actual value approx. 0.50 ms

Operating Mechanical 36,000 operations/hourfrequency Electrical 1,800 operations/hour (under rated load)

Insulation resistance 1,000 MΩ min. (at 500 VDC)

Dielectric strength (see note 2) 1,000 VAC, 50/60 Hz for 1 minute between coil and contacts

1,000 VAC, 50/60 Hz for 1 minute between contacts of different poles

1,000 VAC, 50/60 Hz for 1 minute between contacts of same pole

250 VAC, 50/60 Hz for 1 minute between set and reset coils

Surge withstand voltage (see note 3) 1,500 V 10 x 160 µs (conforms to FCC Part 68)

Vibration Mechanical durability 10 to 55 Hz; 5 mm (0.20 in) double amplitude

Malfunction durability 10 to 55 Hz; 3.30 mm (0.13 in) double amplitude

Shock Mechanical durability 1,000 m/s2 (Approx. 100 G)

Malfunction durability DPDT: 500 m/s2 (Approx. 50 G); 4PDT: 300 m/s2 (Approx. 30 G)

Ambient temperature -40° to 70°C (-40° to 158°F)

Humidity 45% to 85% RH

Service life (see note 4) Mechanical 100 million operations min. (at 36,000 operations/hour)

Electrical See “Characteristic Data”

Weight DPDT Approx. 3.5 g (0.12 oz)

4PDT Approx 6.0 g (0.21 oz)

Note: 1. Data shown are of initial value.2. The dielectric strength of Type G6A-2D34P-ST-US is 500 VAC when the relay is not energized.3. The surge withstand of Type G6A-2D34P-ST-US is 1,000 V 10 x 160 µs when the relay is not energized.4. The mechanical service life of Type G6A-2D34P-ST-US is 10,000,000 operations min.

CHARACTERISTICS

CHARACTERISTIC DATA

Maximum switching capacityDPDT

Ambient temperature vs.maximum voltage (reference only)

Max

imum

vol

tage

(%

)

Ambient temperature (°C)

Rat

ed o

pera

ting

curr

ent

(A)

Rated operating voltage (V)

Electrical service lifeDPDT

Ser

vice

life

(x1

03 o

pera

tions

)

Rated operating current (A)

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G6A G6A

DimensionsUnit: mm (inch)

G6A-234P-ST(15, 40)-US, G6A-274P-ST(15, 40)-USTerminal arrangement/ Mounting holesInternal connections (Bottom view)(Bottom view)

NON-LATCHING

G6AU-234P-ST-US, G6AU-274P-ST-USTerminal arrangement/ Mounting holesInternal connections (Bottom view)(Bottom view)

LATCHING

G6AK-234P-ST(40)-US, G6AK-274P-ST(40)-USTerminal arrangement/ Mounting holesInternal connections (Bottom view)(Bottom view)

Note: and indicate mounting orientation marks.123456123456123456

G6A-434P-ST(20, 40)-US, G6A-474P-ST(20, 40)-USTerminal arrangement/ Mounting holesInternal connections (Bottom view)(Bottom view)

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G6A G6A

G6AU-434P-ST-US, G6AU-474P-ST-USTerminal arrangement/ Mounting holesInternal connections (Bottom view)(Bottom view)

G6AK-434P-ST(40)-US, G6AK-474P-ST(40)-USTerminal arrangement/ Mounting holesInternal connections (Bottom view)(Bottom view)

Note: and indicate mounting orientation marks.123451234512345

Type Contact form Coil rating Contact ratings

G6A-234P-ST-US DPDT 1 to 48 VDC 0.60 A, 125 VAC

G6A-234P-ST40-US 1 A, 30 VDC

G6A-234P-ST15-US 0.60 A, 110 V+DC

G6A-274P-ST-US 0.60 A, 125 VAC

G6A-274P-ST40-US 2 A, 30 VDC

G6A-274P-ST15-US 0.60 A, 110 VDC

G6A-434P-ST-US 4PDT 1 to 48 VDC 0.60 A, 125 VAC

G6A-434P-ST20-US 1 A, 30 VDC

G6A-434P-ST40-US 0.60 A, 110 VDC

G6A-474P-ST-US 0.60 A, 125 VAC

G6A-474P-ST20-US 2 A, 30 VDC

G6A-474P-ST40-US 0.60 A, 110 VDC

G6AK-234P-ST(40)-US DPDT 1 to 48 VDC 0.60 A, 125 VAC

G6AU-234P-ST-US 1 A, 30 VDC

0.60 A, 110 VDC

G6AK-274P-ST(40)-US 0.60 A, 125 VAC

G6AU-274P-ST-US 2 A, 30 VDC

0.60 A, 110 VDC

G6AK-434P-ST(40)-US 4PDT 1 to 48 VDC 0.60 A, 125 VAC

G6AU-434P-ST(40)-US 1 A, 30 VDC

0.60 A, 110 VDC

G6AK-474P-ST(40)-US 0.60 A, 125 VAC

G6AU-474P-ST(40)-US 2 A, 30 VDC

0.60 A, 110 VDC

APPROVALS

UL (File No. E41515)/CSA (File No. LR24825)

Note: 1. The rated values approved by each of the safety standards (e.g., UL and CSA) may be different from the performancecharacteristics individually defined in this catalog.

2. In the interest of product improvement, specifications are subject to change.

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G6A G6A

OMRON ELECTRONICS, INC. OMRON CANADA, INC.One East Commerce Drive 885 Milner AvenueSchaumburg, IL 60173 Scarborough, Ontario M1B 5V81-800-55-OMRON 416-286-6465

Cat. No. GC RLY6 9/97 Specifications subject to change without notice. Printed in the U.S.A.

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