Jordanv(vv(vvEv(vv(vBinset-csep.cnsi.ucsb.edu/sites/inset-csep.cnsi... · vvv Procevvvvv vvvvmat...
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Now that the VI is complete we can begin to collect data Initial data collection will includeC Variations in NIR frequency Variations in THz frequecy Behavior at different temperatures AEUP AEZG AEZA AEZx AEZL AEZU AG )A AG G AG A AG x AG L AG U AG Z AG , AEZAU AEZAZ G ZG AGG AZG xGG xZG Signal 3counts- Energy 3eV- Bulk GaAs Excitation Laser Signal 3counts- Sidebands fall alongside the NIR laser spaced at xx the THz frequencyE Up to AA sidebands have been observed Zaks( BE( HE Banks( and ME SE SherwinE .High)order Sideband Generation in Bulk GaAsE. Applied Physics Letters AGxEA 3xGAL- Controls CCD and spectrometer Collects data from CDD Processes data into an efficient and usable format This VI reduces the time it takes to collect a full set of data from U hours to UG seconds Jordan Crafton Hills Mentor: Hunter Banks Faculty Advisor: Mark Sherwin [email protected] The UCSB FEL provides THz radiation CCD 0 Spectrometer are used to detect sidebands around the NIR frequency All equipment is controlled by a custom)built LabVIEW VI ) xE No longer interacting with each other( the electron and hole now travel along with the THz field LE The electron and hole recollide( emitting a photon of higher energy The kinetic energy added by the THz field is released as sidebands alongside the NIR laser Jordan Grace( Hunter Banks( Mark SE Sherwin( Physics Department( UCSB ) S GE The NIR laser first creates an exciton in a sample of bulk GaAs ) S AE The exciton tunnel)ionizes in the THz field( separating the electron and hole S ) S
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