INSTRUMENTATION

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Nanometrics HL5500PC■

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Nanotronics nSpec■■■■■

C-V ProfilerNanometrics ECVPro■■■

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(FTIR)Nanometrics QS-1200■■■■■■■■

Nanometrics RPMBlue

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Nanometrics Imperia

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Nanometrics Nanospec II

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Tohospec 3100/Tohospec 3100T

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PhysTech DLTS

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Corema

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PhysTech RH2035

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/Tera Evaluator

Quatek RST-100

1

PL 6” ~7 250μm/ Particle

Chip on wafer mapping

1Å75~300mm

120nm2D 3D Mapping

UV 35ÅRobot

2Å75~300mm

Nanometrics2D 3D Mapping

BPSGSiNFSG

2D/3D Mapping

D2W

SiC GaAs GaN

105~1012Ω·cm1mm( )

mapping

Fourier LaplaceI/V C/V

C(T)

IV IIIV

&77K

“ ”

Wafer 2”~8”Wafer / PL

VCSEL DBR200~2600nm≤0.5nm

0.1nm

Particle

III-V GaAs GaN II-VI SiCell Fill/De-bubble/Cell Empty/Sample

CleanWhole Wafer Mapping

RoHs

wafer

50~300mmAFM

1015Ω·cm

1GΩ 500GΩ 1TΩ 5TΩ 50TΩ

Si III-V II-VICIGS

Sample Van Der PauwBar Bridge

0.32T0.1% 25mm ±1%

0.1 0.2 0.40.5T 100GΩ/

90~500K -600°C

10~350K

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Napson RT-70V/RG-5/RG-7/RG-7S/RG-10

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TFT-LCD/CFNapson RT-3000/RS-1300

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Napson Jandel 4-point Probe Head

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300mm Wafer MappingNapson WS-3000

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Napson NC-6800 + TTV

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Napson FLA300/FLA200

Napson EC-80/EC-80P

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PNNapson PN-12α/PN-50α/PN-1S/PN-8LP

PN-12α

PN-1S

PN-50α

PN-8LP

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Napson Cresbox/RT-3000/RG-80N

EC-80P

EC-80EC-80

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MappingNapson NC-80MAP

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/Napson DUORES

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EC-80P

Low:Middle:

0.01~0.5Ω/0.5~10Ω/

High:S/High:

10~1,000Ω/1,000~3,000Ω/

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Napson PVE-80

ITO (RT-70V/RG-5/RG-7S)

Sheet(RT-70V/RG-5/RG-7)

±0.1%(0.01Ω~1MΩ)±0.2%(NIST )

Ingot RG-10 Ingot

Silicon Wafers Diffused WafersIon-implanted Wafers Epitaxial Layers MetalFilms

2D/3D/ /

( )

2”~8”Φ 156mm

(Sheet Resistance Resistivity)Silicon Wafer Wafer P/N

200mm SMIF 300mm FOUP( )2D/3D Mapping

49 1

TFT-LCD/CF Substrates(ITOMetal Layers n+a-Si Layers)

2880x3080mm

50μ 1m ohm/sq

3 ( [Ohm/Sq][S/cm] [S])

: 5386394

Teflon1mm(0.50 0.635 1.59mm )

12.5~500μm10~200g/

(ITO, TCO ) LOW-E(Carbon Nanotubes)

(Graphenmaterials)0.5~200Ω/sq( )

0.1~4000 Ω/sq ( )

2“~8“/300~80μmSilicon Wafers, GaAs Epi, GaN,

GaP, ITO, Metal Layers

Silicon Wafers, GaAs Epi, GaN, GaP, ITO, Metal Layers, AgNW, Nx2O5, CNT

2”~8”/300~800μmP/N

2”~8”( )

Silicon Wafers, GaAs EPi, GaN, GaP, InP, ITO, Metal Layers

2172D 3D6mmNC-600MAP NC-800MAP

PN(TTV STIR Bow Warp )

Insepction (Microcrack)(Life-time)

PN

PN-12α:1mΩ·cm~20kΩ·cm(Bulk) in ResistivityPN-50α: 0.1Ω·cm~1kΩ·cm(Bulk) in ResistivityPN-1S: 0.01Ω·cm~1kΩ·cm(Bulk)PN-8LP: 0.02Ω·cm~5kΩ·cm(Bulk)LED (P=Red N=Green NG= Yellow)

Si/GaAs/Ge/InP , TTV/BOW/Warp/site and global Flatness

( ASTM )Max.1200 /2-D/3-D MappingWafer size: 3 ~8 inch (Max. 12 inch)

■■■

/Bentham TMC300■

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GaAs /

SW Link RPV

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Napson RG-200PV

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Napson SRS-2010

contacts

p type SiHighly doped n type

Depletion layer

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Napson DF-9P

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Napson DF-100

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eDAQ Inphaze (EIS)

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OAI PV&I-V System

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Napson NC-600/NC-700/NC-100PV

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Napson HF-90R/HF-100DC

PG2000

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I-V

NC-100PV

NC-600/NC-700

3

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Napson JPV-100

(Life-Time)Napson HF-300

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Napson CRN-100

1000/ 300mmx300mm

2D/3D ( )1mΩ/ ~1000kΩ/ ( 1mΩ/ ~10MΩ/ )1mΩ·cm~200Ω·cm

15 5

40.001~1000Ω/sq

9Mapping

OK/NG

0.01~1000ohm/sq 9 10

9

109~1015Ω/IGZO

(μ-PCD)

0.1μS~1000μS(0.1~1000Ω·cm )

(75W) (100W)

200~ 2500nm - -

AAA

SLP208mm

- PN - CV I-V -

0.001

10~200ohm/sq

ITO10~1000Ω/

Life-time PN

OK/NG

RS IPIV

>10,000RS100 6

1x1mm2 15x15mm2CPV

(HF90R)(HF-100DC)

/

100μS~5000μS(HF90R) 50μS~20mS(HF-100DC) (10~5000Ω·cm )

JIS

n-type silicon 213~519 cm-3

p-type silicon 214~719 cm-3

1~109ΩASTM

IPCE( / QE)

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( )0.1nm~250μm

SiNx SiOxNx PSG BPSG ITO a-SiPolysilicon a-c:h DLC Lood PR Polyimide SOG

SCI FilmTek™ SYSTEM12”

0~500μm0~500μm

10nm~350μm40wph(9 )

TSVSCI FilmTek™ 2000M TSV

MicroSense /Bow/Warp/Flatness/TTV

■■■

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APBP

Saw frame

2D 3DTSV

3~12III-V GaAs Ge InP GaN…

Sapphire QuartzGlass SiC SOI …

Stacks of Wafers Wafer on fameTaped Wafer Mounted Wafer

/ TTV Bow WarpBending

*

(2μm )

TE/TM

( )

FilmTek™ 1000

±0.005

10nm~200μm

380~1000

380~1000

√

√(1500)

√

√

√

√

FilmTek™ 4000

±0.00002

3nm-200μm

190-1700

380-1000

√

√(4500)

√

√

√

√

√

√

√

√

√

√

√

FilmTek™ 1500

±0.005

10nm~200μm

380~1000

380~1000

√

√(1500)

√

√

√

√

FilmTek™ 2000

±0.002

5nm~200μm

190~1700

240~1000

√

√(3000)

√

√

√

√

√

√

√

√

√

FilmTek™ 3000

±0.002

5nm~200μm

190~1700

240~1000

√

√(3000)

√

√

√

√

√

√

√

√

√

FilmTek™ 2000SE

±0.0002

1Å-200μm

190-1700

240-1000

√

√(3000)

√

√

√

√

√

√

√

√

√

√

√

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4/

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MicroSense UMA-C200L

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MicroSense UMA-C200-STR

8” Thickness/TTV/Bow/Warp/SBIR/SFQR

AXX 32% Throughput200,000

AXX(Match correlation)

5400/5500 68 inch 2mm

Open Casstte,SMIF120,000

5

SiC/GaN/Si IGBT/MOFFET/Diode

<35nHmatrix PIM IGBT

IGBT600A/1500V, 2500A200A-1800A/3KV-10KV

■

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LEMSYS IGBT Automatic Test Line/ / /

PRO AC/DC TRds

150-240 /

■■■

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IGBTLEMSYS PRO AC/DC

IGBTLEMSYS TRd/TRs

IGBT /IEC60747<75nH

1000A-8000A/1500V-4500V14000A300A-10kA/1kV-10kV

■■

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■

SiC IGBTLEMSYS LAB-AC 0545

SiCdi/dt, du/dt, Eon,

Eoff, Err, Irr, Vth500A

1.2kv, 1.7kv, 3.3kv, 4.5kv200

1ns

■■

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■

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LEMSYS TP0620

- 50~2000V- 0.1~10mA- 1~600A/0~10V- 1KV/200mA

LEMSYS DMS

0.1~100A1000V

(trr) 10nS~4μS

CCD0.5μm

UVWafer(6000μm) Wafer(7~10mm)

recipe storage

MEMS

■■■■■

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OAI 6000/800

DMS

DMSQRR1A VRR=30V trr:10ns-4μs

DMSQRR15A VRR=30/50/100/200/400V

trr:10ns-4μsIr:0.2-10A

TrrA:10ns-4μsQrrA:1nC-20μC

trr:10ns-4μsIr:0.8-30A

TrrA:10ns-4μsQrrA:1nC-20μC

trr:10ns-4μsIr:0.8-30A

TrrA:10ns-4μsQrrA:1nC-20μC

trr:10ns-4μsIr:2-60A

TrrA:10ns-4μsQrrA:1nC-50μC

DMSQRR50A VRR=30/50/100/200/400V

DMSQRR50A-01 VRR=5/10/15/20/400V

DMSQRR50A-02 VRR=30/50/100/200/400V

trr:10ns-4μsIr:0.8-30A

TrrA:10ns-4μsQrrA:1nC-20μC

trr:10ns-4μsIr:0.8-30A

TrrA:10ns-4μsQrrA:1nC-20μC

trr:10ns-4μsIr:2-60A

TrrA:10ns-4μsQrrA:1nC-50μC

DMSQRR50A-03 IF=1-50AdIF/dt=20-300A/μs

VRR=5/7/15/20/400V

DMSQRR100A VRR=100/200/400/600/1000V

DMSQRR100A-02 IF=20-100AdIF/dt=100-1000A/μs

VRR=20/30/100/400/1000V

N/A

IF=0.1-2AdIF/dt=10-100A/μs

IRR=0.1-1.5A

IF=0.2-15AdIF/dt=10-150A/μs

IF=1-50AdIF/dt=20-300A/μs

IF=1-50AdIF/dt=20-300A/μs

IF=1-50AdIF/dt=20-500A/μs

IF=1-100AdIF/dt=100-1000A/μs

IF=1-50Atr=0.1-3.2μs

tfr:10ns–10μsVfp:0.5–100V

Vf:0–10VDMST-ON50A

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Pegasus PG2000LED

2” 4”LEDLED

1024x768 CCDmw

LED 25k/h

■■■■■■■

MEMS6”~8”MEMS

Agilent LCR meter

chuckDouble Side

Special Desigh GaAs

■■■■■■

Pegasus PG 101W

4”~8”/

LEDLD/PD

/MEMS/ /

■■■■■■■■■

LEDAPS

BC

P7LED

APSL H3C

■■

■

P7

BC

Wentworth S200FA/300FA8”~12“ FA IC Debug

-65°C~300°CRF fA

500x~2000x

CableConnector

CCDLabmaster

■■■■■■

■■

( / )Wentworth M200FA/S200FA-HV

IGBT MOSFET10kV

Kelvin chuck/

InkerTTL RS232 GBIP IGBT

cable Agilent Keithley

■■■■■■■■

DIODE, MOSFET, IGBT

Pegasus FAPG150D

CCD Wafer

2 cassettewafer

■■■■■■

Pegasus 2000D

3”~8”30A

TTL RS232

■■■■■■■

Model M200FA

Model S200FA-HV

GAMMA TIA-3000■■■■■■

7

AR/VRGAMMA GS-1290-NED■

■■

■

LEDGAMMA RS-7

Camera

■

■

■■

■■

GAMMA GS-1220/1190

LED

Display

■

■

■

GAMMA GS-1290-DMS/RadOMA-NVISGAMMA GS-1290-DMS■■■■■

6 LCDGAMMA GS-940-7X■■

■■

/UDTi S470/480/490■

■■■■

GAMMA uRAD-FL■

■

■■■■■

2D VCSEL (Far Field)GAMMA GS-655CAM

VCSEL

■■■

■■

VCSEL (Near Field & LIV)GAMMA GS-655-NIR■■■■

/GAMMA 191■■

■

■■■

VCSEL Power supply

Far Tield

Camera system

Conoscopic len

Computer andSoftware

GAMMA RadOMA-NVIS■■■■

MIL-L-85762A MIL-STD-30090.00015cd/m²

380~930nm 380~1100nm

310~1100nm ±0.25nm

0.0005cd/m2 5° 2° 1° 0.5° 0.3° 0.1°

NIST

GS

3D LCDMFT LCD

lm mW/cm2 cd j/m2 lux 10/

200~1750nmCIE f1’<0.8%

4

S480 /211 /

AR380nm~1700nm ( 191Q

200nm~2000nm)

VF VR IR LIVNTC

(Wall Plug Efficiency)

(FwHM/RMS)

LED

RS-10D NISTRS-12D NISTNM-22BPRS-15-XX5000FEL 1000W

GaAs 200~1700nm 10-15watts/ 10-8lux

5ppm/°C0~10V 20mV

NIST

1mm~5mm

MTF

250~1100nm±0.5nm±1%

NIST

CCD/CMOS

34 LED

75mm 97%380~1000nm /

NIST

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Roadvista 922■■■■

■

Roadvista 1000

■■■■■■■

Roadvista StripeMaster II-Touch■■■■■■

Roadvista 1200F

■■■■■■■

Roadvista 932

■

■■■■

■

Roadvista 933■■■■■

Roadvista Laserlux G7■■■■

■

Roadvista 940D

: -45°~+45°: 0.2°~+2°

ASTM E1709, EN471, ANSI 107 CIE x,y

32000

0.2°/0.5°ASTM CIE DIN

GPS

4500

ASTM CIE0.2°/0.5°

10~30mASTM CIE DIN

-60°~+60°-180°~+180°

30000

400Android,IOS,windows

USB

TFT-LCD25000

/GPS

ASTM E1710/EN1436 30

/ASTM CIE DIN

10000GPS

TREK 152-1

(CPM)TREK 156A/157/158ATREK 520/523/876/884

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TREK 821/820/800 ■

■

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820

800

TREK 901HS■

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■

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/

TREK 541A-1/542A-1

■

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TREK 511/1501

821

156A

157

158A

1

TREK PD04002A■■■■

TREK 344/PD06078( )■■■

MONROE 291■■■■■■

■■

MONROE 287B■

■■■■■■■

9

-

-

-

--

-

CAFE

■■■■■■■

Wolfgang METRISO 3000/B530

MONROE 282A/282IS■

■■■■■■■

HOLD 40

Intrinsically safe (IS) meter UL Certification Class I Division 1, Groups A, B, C, D and

Class II, Division 1, Groups E, F, G

0-±55V0.2%

20pF±4pF-60°C~160°C

RH 80%

0~±2kV DC(520 & 876) 0~±20kV DC(523 & 884)

5%( )5~25mm

φ25~175mm

(876/884 )

156A 3 1/2 LED157 158A

± 1V

- / ±1000~±100V( )- /

6” 1”

USB PC(TREK 157/158A)

DI-Water

(10V CDM )(100V CDM )

EMILED

0~±100V DC AC (800) 0~±2kV DC AC (820/821)

±0.1%( )(800/820) ±1%( )(821)

1kHz(821) 5kHz(820) 12kHz(800)LCD

12 LED -

103~1012

-

ANSI/ESD SP3.3

0~2KV/10KV DC Peak AC0.05% 0.2%

CE

- ±1kV DC peak AC(TREK 541A-1)- ±100V DC peak AC(TREK 541A-2)- ±10kV DC peak AC(TREK 542A-1)- ±20kV DC peak AC(TREK 542A-2)

±1% (TREK 541A) ±5% ±0.2% (TREK 542A)LCD

USB

511

L: ±2KV H: ±20KV 5%TREK1501 5

ANSI103Ω ~ 1012Ω 10%

DC 10V 100V 500V1mA≤I≤1.3mA

0~10KΩ 1KΩ~1.2TΩModel850(2.27kg/ 63.5mm)

50000

103~1013Ω103~1012Ω ±5%

1013Ω ±8%6

152P-CR-1 IEC ESDA

152BP-5PANSI/ESD-STM4.1152P-2P

(CAFE) ANSI-ESD SP15.1-2011

www.quatek.com.tw

10

OLED/

ESD

QTI-VM-QSW■■■■

Trek 344/PD06078( )■■■

0~2KV/10KV DC Peak AC0.05% 0.2%

QTI-RM-120/920A■

■■

■

■■

()

750KΩ~35MΩ±5%(<1MΩ )

±10%(≥1MΩ )TCP/IP

1.5s61340-5-1 /

ANSI/ESD S20.20

TREK/WWGOLED

B/S - ±1kV DC peak AC(TREK 541A-1) - ±100V DC peak AC(TREK 541A-2) - ±10kV DC peak AC(TREK 542A-1) - ±20kV DC peak AC(TREK 542A-2)

■

■■

541A ±1% 542A ±5% ±0.2%

/WIFIMES/CIM/PLC

±600~5.5kV0~99.99s

0.001s

ETS 4406■■■■■■

ETS 4431TESD S11.31

+800~+1200V6±2ns(0Ω) <20ns(500Ω)150±15ns(0Ω)

200±20ns(500Ω)

EIA-541 MIL-PRF-81705D

■

■■

■■

0~20/200/2000nC0.01nC

/

■■■■

ETS 230

20nC 200nC0.1nC

■■■■

MONROE 284

Trek 541A/542A/Wolfgang WT5000■■

■

MES/ PC

■■ ■■■ ■

QTI-RM-G1800APP

ANSI S20.20

1%~5%

TET M1200

HBM MM CDM LATCH-UPMIL EIA/JEDEC AEC ESDA

0~±8KV256Pin

CCD

■

■■■

CDMTET CDM-550

D-CDM F-CDM

101024Pins

EIAJ ESDAJEDEC

■■■■

■

ETS 9910PinScan/9910PinPulse±5V~±8KV

HBM (100pF / 1,500Ω): ±5V~±8 KV MIL STD.883E, ANSI/ESDA/JEDEC JS-001MM (200pF / 0Ω ): ±5V~±2KV

ANSI/ESDA S5.2-2012HMM (150pF / 330Ω ): ±5V~±5KV

IEC 61000-4-2PinScan 128Pins

■■

■

■

■

ETS 5532

81X36cm36x10cm

■■

■■

ETS 930D ESD Gun±100V~±26000V ±30000V

/

HBM, IEC, MIL Automotive

■■■■

HMMBARTH 4702 IEC-50

500V~23KV75A PEAK/50Ω

0.7~1.0nSIEC-50

■■■■■■■

HBM TLPBARTH 4003TLP

CDM TLPBARTH 4012 VFTLP+

BARTH 4012 VFTLP+ TLP

I/V100ps

1ns, 2ns, 5ns,10ns( )0~500V 1000V( )0~10A@50Ω 20A( ) 30A( )

■

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■

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■■

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TET Ecdm-400E/800E

HBM MM D-CDM F-CDM0~±400V/4000V(Ecdm-400E)

0~±8000V(Ecdm-800E)

1V(400E/800E)1~99

ESDA JEDEC IEC AECWafer Level

ESDTET 7000

HBM MM Latch up MILEIA/JEDEC JEITA AEC ESDA

Pin 1024Pins125°C

■

■■■

TLPESDEMC ES-621

7120A

TLP VFTLP HMM

■■■■

TET M1200

TLPI/V

±1.5%Package ( 48-pin DIP )

Wafer Model 450020~500V 1000V( )0~10A@50Ω 20A( ) 30A( )

11

TREK 950Trek950 0.02 0.5Mpa

10mm ±3V

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0.2μmTeilch Pro 202

200nm~10μm10nm

■■■■■■

CE NIST

■■■■

HalTech RPC200

WV-9000

2”~12“■■

EXSEALUrethane

3 1

■■■■

EXSEALUrethane

1

■■■■

Wolfgang WarmbierEXSEAL

108Ω/■■

■

EXSEALUrethane

Tray

■

■

ICPEN-VAC® ■■

dust

Dirt

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12/ /

±5V ( 300mm)1.5 ( 300mm )

1.4~3.2m3/min×30.8~1.0m/s( 300mm )

0~40°C 15~85%566×146×69.5mm(W×H×D)

3100g61dB(A)( 1m)

SSD HDC-AC

■■■■■■■

■■

SSD BF-6MB■■■■■■■■■

SSD CABX

HDC-ACSSD BF-2MA-LV■■■■■

HDC-AC±1V

3S(30mm)

±30V( 300 mm 0.3MPa)0.01~0.5 MPa

5~40°C15%~85%

350~3100×92×29mm(W×H×D)SSD HDC-AC

CABX-HWCABX-LW

HDC-ACSSD BF-X2MC■■■■■

HDC-AC±5V

3S(30mm)

)

SEKISUI Eslon DC Plate

- 106~108Ω/-

- Eslon DC

- Eslon DC PVC PMMA/ PC

-

■

■

■

■

SEKISUI Eslon DC Sheet G /DC Sheet clean

- Sheet G PVC 108~109Ω/- Sheet Clean 1010~1011Ω/

Sheet GSheet Clean

■

■■■

/SEKISUI Eslon DC3D

- 106~108Ω/-

- > 85% > 3%

- PVC /PMMA /PC - -

■

■

■

106~1012Ω

(Outgassing)

(103~1012Ω·cm)

■■■■■■■

Wafer carriersFOUPIC test socketBurn-in socketLCD related parts

■■■■■

Storage traysChip carriersEquipment casesCassettesTweezers

■■■■■

PEEK,LCP,PES,PPS,PBI,PEI,PBT,PC,POM,PMMA,OthersKrefine type A: 1010~1012Ω

Krefine type B: 108~1010Ω Krefine type C: 106~108Ω

500×500×10mm 500×500×12.5mm 500×500×20mm 100×150×5mm

■■

■

■■■■■■

CoosTek Cerastat ESD Safe Ceramic

Surface Resistance Surface Resistance (ohm(ohm )) 1)

Static Decay Time Static Decay Time (1000V to 5V) (1000V to 5V) 2)2)

Residual VoltageResidual Voltageafter Discharge after Discharge (Hot(Hot --spot)spot) 2)2)

Peak Current on Peak Current on ESDESD3)3)

ProperProper RangeRange1) ESD STM 11.112) KUREHA Method3) ESD STM 5.3.1Carbon Fiber Filled Materials

■■■

■■■

13

8ppm 301025ppm 304150ppm 3050V AC/DC 1025VA AC/DC 30AΩ 2 /4 1GΩF 10mFH 10HHz 10MHzRTD/PRT

10nV~1050V 8½ 4PPM

0.1uV~1000V 6½ 0.02%

0.1uV~1000V 6½ 200PPM

1μA~30A 6½ 200PPM

0.1μΩ~1TΩ 8½1Hz~10MHz 7½PRT~200°C~660°C 8½

■■■■■■■■■■

AD/DC /RS232

GPIB/USB

250MHz/350MHz/600MHz

■■■■

TRANSMILLE 3000A

■

■■■

■■■■■

AHI AH 2700A

/ LCRPA

8 7 Transmille 8104/8109■

■

■

■

■

■

/ GPSTRANSMILLE 8700■■■■■

TRANSMILLE 4010/4015■

■■■

■

/Calmet C300B

■■■■■

TRANSMILLE 3200A

■■■■■

TRANSMILLE1000A

TRANSMILLE9000A

■

■

■

1000 3½ 4½

9000

3300

Calmet C200/C233■■■■

IET CS■■■

IET 1693■■■

IET LS■■

Calmet /

/ /

/ /

IET RS■■■

IET HRRS-5kV■■■

IET SRL/SRR/SRC■■

1.5x10-8 tann δ 3x10-7

nanosiemens 1.7x108 gigaohms0.4s 30ms8 / 5

3

±100V

NIST NPL

4000

8ppm/15ppm7

6GHz

U PROCAL4000 USB

- 1TΩ - 0.1Ω

- 0.05Ω 1KΩ - 12KV

560V120A, 360A

0.02% 0.05%

1pF~11111μF0.01%~4%

1μH~11H0.025%~4%

1mΩ~1.9TΩ 10Ω~10TΩ0.01%~1%

12Hz~200kHz0.02%

: 0.00001Ω~99999kΩ

420V20A(100A)45~70Hz0~±90°

1mΩ~10TΩ1ppm~1%

1GHz1GHz

GPS/

3 /2

www.quatek.com.tw

14/ /

INPUTSIGNAL

FEEDBACK S IGNAL

HIGH GAININTEGRATOR

HIGH-VOLTAGESUPPLY

VOLTAGE OUTPUTMONITOR

HIGH-VOLTAGEOUTPUT

HIGH-VOLTAGESUPPLY

OPTO

ISOL

ATIO

N

PRECISION RESISTIVEDIVIDER

OUTPUT STAGES USINGCASCODED MOSFET'S

A

CLASS AB

+

+

POSITIVE

NEGATIVE

s

:i = 4 f (Cload + X pF) Vpeak

:i = (Cload + X pF)2 f Vpeak

:i = (Cload + X pF) dV/dt

Vpeak-to-peakVpeak-to-peak dV

dt

-30 kV

+2 0 mA

+3 0 kV

-20 mA

50Hz 50%

Ipeak = Cload = ( )Cint = *f =

Vpeak-to-peak = dV = dt = dV/dt = /

Trek Model10/10B30/20A20/20C5/80601C50/12610E609E-6609B-3PZD700APZD350A60310/40A

C55pF50pF60pF70pF400pF34pF66pF50pF66pF665pF365pF800pF40pF

int

/Vout max: ±5V~±100VPW: 50~500msTr: 0.2~10nsOffset: 0~±20VPRF max: 50MHzDelay time: 25ns~500ms

Vout max: 200~3000VIout max : 400mA~200APW: 5ns~1msTr: 2~100nsTf: 2~100nsPRF: 0~1MHz

Vout max: 20~100VPW: 0.2ns~1msTr: 0.3~10nsTf: 0.3~10nsPRF: 0~1MHz

Avtech

FID /

Iout max: 0.1~500APW: 0.4ns~DCTr: 0.2ns~2μsTf: 0.2ns~2μsPRF: 0~25MHz

/ /MEMS EBIT

...

FPG-NHFFPG-PHFFPG-PXFPG-NXFPG-NFPG-P

FPG-SP

1KV-50KV0.2KV-50KV1KV-50KV1KV-50KV1KV-1MV

2KV-200KV2KV-10KV

<1-3ns<1ns

<0.1ns>1ns1-2ns

0.1-1ns20-100ps

2-5ns0.2-3ns0.2-3ns2-5ns

1-100ns0.2-3ns0.2-1ns

3KHz-3MHz10KHz-10MHz1KHz-100KHz

10KHz-100KHz1KHz-1MHz

1KHz-300KHz100KHz

Model60/1050/1240/1530/20AP0621NP0621P20/20C20/20C-HSPD0701610/40A10/40A-HS10/10B-HS609B-3610EPD06087 5/805/80-HS609E-6PZD2000A623BPZD700APZD700A M/S601CPZD350APZD350A M/S2100HF603222022102205668B640645646677B615-3615-10PD05034605A

Output Voltage0~+60 kV0~+50 kV0~±40 kV0~±30 kV0~-30 kV0~+30 kV0~±20 kV0~±20kV0 ~ ±10 kV0~±10 kV0~±10kV0~±10 kV0~±10 kV0~±10 kV0 to ±5 kV0~±5 kV0~±5 kV0~±4 kV0~±2 kV0~±2 kV0~±700 V0~±700 V0~±500 V0~±350 V0~+350 V0~+150 V0~±125 V0~±2000 V0~±1000 V0~±500 V0~±3kV0~±2kV0 to ±2kV0 to ±3kV0~±2kV0~±10kV0~±20kV0~±7.5kV0~±1kV

Output Current0~±10 mA0~±12 mA0~±15 mA0~±20 mA0~±20 mA0~±20 mA0~±20 mA0~±60 mA0-±300mA0~±40 mA0~±120 mA0~±40 mA0~±2 mA0~±2 mA0 to ±20 mA0~±80 mA0~±240 mA0~±20 mA0~±400 mA0~±40 mA0~±100 mA0~±200 mA0~±20 mA0~±200 mA0~±400 mA0~±300 mA0~±80 mA0~±20 mA0~±40 mA0~±80 mA0~±5 mA0~±6.5 mA0~±6.5 mA0~±6.5 mA0~±5 mA0~±10 mA0~±35 mA0~±160 mA0~±1 mA

Large Signal Bandwidth0~1.4 kHz(2%Distortion)0~1.4 kHz(2%Distortion)0~1.4 kHz(2%Distortion)0~5kHz(2%Distortion)0~3.5 kHz(1%Distortion)0~3.5 kHz(1%Distortion)0~3.75 kHz(1%Distortion)0~5.2KHz(1%Distortion)0~10kHz(2% Distortion)0~23 kHz(-3dB)0~23 kHz(-3dB)0~19.5 kHz(-3dB)0~400 Hz(1% Distortion )0~600 Hz(1% Distortion )15 kHz (1% Distortion )0~60 kHz(-3dB))0~60 kHz((-3dB))0~6 kHz(1% Distortion )0 ~60 kHz(3% Distortion)0~10 kHz (1% Distortion )0~125kHz (-3dB)0~150 kHz (-3dB)0~8 kHz(1% Distortion)0~250 kHz (-3dB)0~250 kHz (-3dB) 0~2.6 MHz(-3dB)0~150 kHz(5% Distortion)0~75 kHz (-3dB)0~40 kHz (-3dB)0~75 kHz (-3dB)DC0~1.2 kHzN/AN/A0~1.2 kHz0~5 kHz0~10 kHz(1%Distortion) 0~15 kHz(1%Distortion)DC

Slew Rate350V/μs350V/μs350V/μs750V/μs350V/μs350V/μs450V/μs800V/μs1000 V/μs750V/μs900V/μs700V/μs30V/μs20V/μs500 V/μs1000V/μs1000V/μs150V/μs750V/μs300V/μs380V/μs380V/μs50V/μs550V/μs500V/μs2000V/μs100V/μs100V/μs150V/μs150V/μsN/A15V/μsN/AN/A15V/μs80V/μs500V/μs1000V/μsN/A

PZD700-1/PZD700-2 PD07016 610E 2100HF 2200 series 2300 series

15

www.quatek.com.tw

16/PCB

/Dranetz PX-5/PG-4400/PV-440

Dranetz HDPQ Visa

8IEEE 1159 IEC61000-4-30 Class A

EN50160 GB

IEEE 1159IEC 61000-4-30 Class AEN50160 GB

CCD Bent PinPCB SMT

600x900mm 9μm/pixel~25μm/pixel

Offline AOIVista

402 60K 1520x760mm61,440Pin

IC Level 4Clamshell Vista

10K Pin 60Pin

…

(Word )/ .

1MHz .

IEC 61000-4-30 A, IEC 61000-4-7, IEC 61000-4-15, en50160, NVE, IEEE 1159, IEEE1453, IEEE 519, IEEE 1459

- 24 16 0~10V

6 0.2%0.2% 0.5%

0.25~1.0Vrms1.0Vrms

ESR Z

4 USB

LCDIVHuntron Tracker Signature Analysis

DH ProberLabVIEW DUT

Z RFNI PCB

CCD

■■■■■

AC/DC1000Vrms 512

8 4 4IEC61000-4-30 A IEEE1159

- IEC61000-4-7 IEEE519EN 50160 Ed 3

■

■■■■

Dranetz Encore 6100■

■■■■■

■■■

■■■■■

■

■■

PCBHuntron Tracker 2800/2800S

PCBHuntron Tracker 3200S

Huntron Access Series■

■■■■■

■■

AOITESTRONICS 506■

■

■■

Pin ICTTESTRONICS 402 60K

■

■

■■■

AccessDH Prober

Access2 Prober

ADI Smart Tweezers ST5S

PCB

:

Sigma

Radiant Multiferroic/Premier II/Precision LC/RT66B

■■■■■

■■■

■■■■■■■

■■■■

■■■

■■■■■■■

■

■■■

5 LAB PEANUTS

■■

■■

Radiant PNDSAFM

/DIPA 2000i■

■■■■

■■■

■■■

Trek E.F.M. 1100TM

■■■

■

AFMWorkshop NP-AFM

■■■■■■■

LED ELQuatek M2442S-9A

Quatek 5601TSR/QT-50

( )

(=20 )

Multiferroic II Premier II

5KHz @ 10V5KHz @ 30V5KHz @ 100V5KHz @ 200V2KHz @ 500V

RT66CLC II

±100V±200V±500V

2.5MHz 2.5MHz 250kHz

±10V±30V±100V±200V±500V

250KHz @ 10V50KHz @ 30V50KHz @ 100V50KHz @ 200V2KHz @ 500V

270KHz @ 10V270KHz @ 30V270KHz @ 100V100KHz @ 200V5KHz @ 500V

±10V±30V±100V±200V±500V

±4KV/±10KV

<1pA

0.03Hz

PNDS■■■■

>500kHz1 inch* 1 inch0.25 inch

>20μs

■■■■

AFM

PNDS

AFM Chuck

Sample

PZT Actuator

Error Function

Control Signal

Quad Cell Laser

Σ

GPID HVA

Sample

-40

-30

-20

-10

0

10

20

30

40

50

-6 -4 -2 0 2 4 6

Volts

uC/c

m^2

, uA/

cm^2

, uF

/cm

^2

RemanentPolarizationSW CV*10

nSW CV*10

SW IV*2.5

nSW IV*2.5

0.26 micron thick 20/80 PZT with platinum

electrodes.

Cantilever Tip Displacement

-2

0

2

4

6

8

10

12

14

-40 -30 -20 -10 0 10 20 30 40

4/20/804/52/48

Corrected for impedance error.

Displacement in microns.Hysteresis vs Temperature

-60

-40

-20

0

20

40

60

-2000 -1500 -1000 -500 0 500 1000 1500 2000

Temperature (C)

Pola

rizat

ion

(uC

/cm

^2)

30C50C70C90C110C130C150C170C190C

/ CV/ D33

( )

17

D33-

-( )

DLTS

I(V) C(V)

0.1nm/ ±1.5mm

670nm diode, <5mW/ >500kHz

vs vs

PUND vs vs ( )

IV vs vs ±50Oe

( )GPIB RS232

- -175~500°C-

22.9cm(H)x25.4cm(W)x19.1cm(D)91.4cm(H)x91.4cm(W)x91.4cm(D)

0.1~3600μm

2”GaN / VFLED Wafer 9 QC

/ 30 9LED

6ΦLED phase

─

AFM

vibrating non-vibratinglateral force phase

10μm±1KV

0.5 % F.S..

1V2000um square

Static, Line Profile & 3D Mapping

ITO

- 10mΩ~22kΩ- 50mΩ/ ~100kΩ/

±1DC~100nA

0.013nm0.2μc/cm3

10kV( )0.05~1.5mm

PEANUTS

EFM (Electrostatic Force Microscope) Electrophotography MEMC

±200V

5kHz

1/8th Hz

1KHz

10pA

JOVA ISL-4800■

■■

Q/mTrek 212HS-3A■

■■■

Trek 230 TO■■■■■■■

QEA TFS-1000■■■■

idb ID-909■

■■

MIPI SMIA!

www.quatek.com.tw

18/

QEA Personal IAS II■

■■

■

■

QEA MFA-2000L■■■■

QEA Scanner IAS■■■

QEA IAS-1000■■

QEA PDT-2000■■■■■■■■■■

/QEA DRA-2000LL■

■■■■■

250MHz/1 2 4 MIPI(CSI2)960Mbps/SMIA(CCP2) 650Mbps

(DVP DVI HDMI )12 24 -

108~1016Ω·m 10V 8 108~1010Ω 4~10KV 1011~1015Ω

28ml( ) 10-6~10-8Coulombs

3-off 10-7~10-9FSD

/ / / / /

ISO-13660ISO-12233

5μm 33μm

USB PC

Blow-off

/ Q/m

/

-0.19999~0.19999μc0.00001μc

±0.1%( )1~100kPa2~10kPa

USB PC

PIDC

/

Pass/Fail

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( ) 308 411493 +886-2-27973357 +886-2-27973957

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