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GaN HEMT 介绍

Sun Guo Wei FAE of Fujitsu Semiconductor (shanghai) CO.,LTD Mail : Guowei.Sun@cn.fujitsu.com Tel : 86-21-6146202

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Transphorm 公司的介绍

2007年成立

坐落于美国加州Goleta

超过400多专利

全球唯一通过JEDEC认证的GaN公司

Transphorm与FUJITSU关系

2014年FUJITSU半导体功率器件部门与Transphorm合并成立日本office。

FUJITSU 是Transphorm的投资方

FUJITSU负责生产Transphorm负责研发

Transphorm GaN HEMT 介绍

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GaN和SiC更适合高压场合

GaN用于高速电子迁移率适合高频工作场合

SiC适合于高温的场合

Si,SiC,GaN材料半导体的比较

材料 Si SiC GaN

禁带宽度Eg（eV） 1.1 3.2 3.4

电子迁移率u(cm/Vs) 1500 900 2000

临界击穿电场Ec(MV/cm) 0.3 2.0 3.3

电子饱和速度Vs（107cm/s） 2.5 2.0 2.5

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Si MOSFET垂直结构 GaN HEMT

Si MOS的结构注定会有寄生二极管存在

GaN横向结构没有寄生二极管更小的反向恢复损耗和器件高可靠性

GaN是常开器件Vgs为负压时关断，实际上Transphorm在GaN上串联一个30V的Si MOS解决0V关断5V导通的问题

Si,GaN HEMT的结构

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2V阀门电压（0V关断,5V开通）

+/-18V MAX Gate电压

正常开通需要100-200mA的驱动电流采用通用的驱动即可

30V低压Si MOS 拥有Low Qg& Low Qrr

GaN HEMT工作导通状况

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Si MOS的PIN脚排序GDS,GaN排序是GSD这样内部走线就更短寄生电感等参数更低更有助于GaN的高频应用

Si MOS功率器件PIN脚的排序在开启和关断的时候大的Drain电流变化值会对VGS带来很大的干扰

GaN应用的Kelvin的结构使得功率S和驱动S端子分开有助于减少Vgs的振铃从而提高GaN的可靠性

Si MOSFET与GaN 脚位构造区别 （TO220）

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更低的Qg值意味着更小的硬开关损耗以及更小的驱动损耗

更小的Qrr意味着更小的反向恢复损耗

更小的Co意味着器件本身更小的死区时间

Si MOSFET与GaN参数对比

Parameters IPA60R160C6 TPH3006PS

Static VDS 600V@25℃ 600V(spike 750V)

RDS(25℃) 0.14/0.16ohm 0.15/0.18ohm

Qg 75nC 6.2nC

Qgd 38nC 2.2nC

Dynamic Co(er) 66pF 56pF

Co(tr) 314pF 110pF

Reverse Operation

Qrr 8200nC 54nC

Trr 460ns 30ns

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唯一的一家通过JEDEC认证的GaN功率半导体公司

175℃高温操作测试：在175℃要工作3000小时后测试漏电流R(on)动态阻抗等参数没有变化

超高温187 ℃下面操作测试

标准1000小时600V器件HTRB测试

加速老化测试，保守预估寿命600V>107Hr,480V>108Hr

HTOL

•175 ℃ 100% rated voltage,3000hours

High voltage off state testing

High temperature DC testing

Electro-migration

GaN HEMT可靠性

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GaN HEMT分类

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GaN HEMT Roadmap

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GaN HEMT更适合高频的工作环境，从而可以获得更高的电源功率密度。

GaN极低的Qgd与Qrr在开关电源硬开关电路和软开关电路中开关损耗以及反向恢复损耗极低，从而可以得到更高的效率。

GaN HEMT优势

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Comparison with Infineon Cool MOSFET Suitable for higher working frequency.

•For SMPS the higher frequency means higher power density.

•Left is Infineon demo(400W PFC, Frequency =65KHz).

•Right is GaN application instead of Cool-MOSFET made by Delta(400W PFC , Frequency=750K).

•Size become ½ under the same efficiency.

应用GaN HEMT(PFC)

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•Below is Delta solution for Apple(250W PFC+LLC, PFC frequency=65KHz,LLC frequency=100K).

•Up is GaN application instead of Cool-MOSFET made by Delta(250W PFC+LLC, Frequency=200K,LLC frequency=170KHz-250KHz).

•Size become ½ .

•Efficiency improve 1.7% at full load and improve 3% at 10% load.

应用GaN HEMT(PFC+LLC)

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•This is 4.5KW inverter made by YASKAWA(input voltage:60-400V,output power =4.5KW,single phase 200V).

•The big size product made by silicon power device (Frequency=16KHz).

•The small size product made by GaN(Frequency=50KHz).

•Size has a 40% reduce.

•Maximum power efficiency improve 1.5%.

应用GaN HEMT(INVERTER)

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PFC+LLC(All in one) Application PFC means power factor correction , PFC is a boost circuit and the output

voltage is about 400V. The LLC means LLC half bridge resonant circuit , LLC belongs to soft switching mode, it can set down the voltage to apply.

Target market

•All in one computer , TV , Printer , LED lighting , Medical Power ,where customer would pay premium for smaller size and higher efficiency.

选型Transphorm产品

PN VDS(V) ID(A)T=25℃ ID(A)T=100℃

PMAX

TPH3002 600 9 6 300W

TPH3006 600 17 12 600W

TPH3205 600 34 24 1.2KW

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PV Inverter(Low to mid power) and UPS The input voltage of PV inverter is about 60-400VDC,the output voltage is

about 220VAC. Tradition solution is boost the input voltage into about 400VDC then invert into 220VAC.

Target market

•PV inverter that needs to reduce size.

选型Transphorm产品

PN VDS(V) ID(A)T=25℃ ID(A)T=100℃

PMAX

TPH3002 600 9 6 800W

TPH3006 600 17 12 1.6KW

TPH3205 600 34 24 3.5KW

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Totempole PFC, AC-DC Totempole PFC topology can support 99% efficiency and low total BOM cost.

Target market

•Server power , performance-PC , Automobile charger for high power and efficiency.

选型Transphorm产品

PN VDS(V) ID(A)T=25℃ ID(A)T=100℃

PMAX(high line)

TPH3006 600 17 12 1.2KW

TPH3205 600 34 24 3KW

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Motor Drive(low power , integrated) Improve the 5X frequency and higher efficiency and reduce system volume

and BOM cost if filter is included.

Target market

•Motor inverter need to reduce size.

•Motor need high speed control.

选型Transphorm产品

PN VDS(V) ID(A)T=25℃ ID(A)T=100℃

PMAX(high line)

TPH3002 600 9 6 1.2KW

TPH3006 600 17 12 2.5KW

TPH3205 600 34 24 5KW

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The critical PCB layout •For PCB layout should be rework about the GaN application instead of

MOSFET.

PCB Layout of GaN HEMT

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Mail : Guowei.Sun@cn.fujitsu.com Tel : 86-21-6146202